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1. 发明申请

US20140030956A1 CONTROL OF POLISHING OF MULTIPLE SUBSTRATES ON THE SAME PLATEN IN CHEMICAL MECHANICAL POLISHING 审中-公开
标题翻译：化学机械抛光中相同板上多个基板的抛光控制
公开(公告)号：US20140030956A1
公开(公告)日：2014-01-30
申请号：US13558140
申请日：2012-07-25
申请人： Jimin Zhang , Jose Salas-Vernis , Ingemar Carlsson , David H. Mai , Huyen Tran , Zhihong Wang , Wen-Chiang Tu , Stephen Jew , Boguslaw A. Swedek , Shih-Haur Shen , James C. Wang , Yen-Chu Yang
发明人： Jimin Zhang , Jose Salas-Vernis , Ingemar Carlsson , David H. Mai , Huyen Tran , Zhihong Wang , Wen-Chiang Tu , Stephen Jew , Boguslaw A. Swedek , Shih-Haur Shen , James C. Wang , Yen-Chu Yang
IPC分类号： B24B51/00
CPC分类号： B24B51/00 , B24B37/013
摘要： A polishing method includes positioning two substrates in contact with the same polishing pad. Prior to commencement of polishing and while the two substrates are in contact with the polishing pad, two starting values are generated from an in-situ monitoring system. Either a starting polishing time or a pressure applied to one of the substrates can be adjusted so that the two substrates have closer endpoint conditions. During polishing the two substrates are monitored with the in-situ monitoring system to generate a two sequences of values, and a polishing endpoint can be detected or an adjustment for a polishing parameter can be based on the two sequences of values.
摘要翻译：抛光方法包括将两个基板定位成与相同的抛光垫接触。在开始抛光之前，当两个基板与抛光垫接触时，从原位监测系统产生两个起始值。可以调整施加到一个基板的起始抛光时间或压力，使得两个基板具有更接近的端点条件。在抛光期间，用原位监测系统监测两个基底以产生两个值序列，并且可以检测抛光终点，或者可以基于两个值序列来调整抛光参数。

2. 发明申请

US20120053717A1 ENDPOINT CONTROL OF MULTIPLE SUBSTRATES OF VARYING THICKNESS ON THE SAME PLATEN IN CHEMICAL MECHANICAL POLISHING 失效
标题翻译：在化学机械抛光中相同板上变化厚度的多个基板的端点控制
公开(公告)号：US20120053717A1
公开(公告)日：2012-03-01
申请号：US12871714
申请日：2010-08-30
申请人： Alain Duboust , Stephen Jew , David H. Mai , Huyen Tran , Wen-Chiang Tu , Shih-Haur Shen , Jimin Zhang , Ingemar Carlsson , Boguslaw A. Swedek , Zhihong Wang
发明人： Alain Duboust , Stephen Jew , David H. Mai , Huyen Tran , Wen-Chiang Tu , Shih-Haur Shen , Jimin Zhang , Ingemar Carlsson , Boguslaw A. Swedek , Zhihong Wang
IPC分类号： G06F17/00
CPC分类号： B24B37/013 , B24B37/042 , B65B1/366 , G06F17/5086 , H01L21/30625 , H01L22/12 , H01L22/20 , H01L22/26
摘要： A difference between a first expected required polish time for a first substrate and a second expected required polish time for a second substrate is determined using a first pre-polish thickness and a second pre-polish thickness measured at an in-line metrology station. A duration of an initial period is determined based on the difference between the first expected required polish time and the second expected required polish time. For the initial period at a beginning of a polishing operation, no pressure is applied to whichever of the first substrate and the second substrate has a lesser expected required polish time while simultaneously pressure is applied to whichever of the first substrate and the second substrate has a greater expected required polish time. After the initial period, pressure is applied to both the first substrate and the second substrate.
摘要翻译：第一衬底的第一预期所需抛光时间与第二衬底的第二预期所需抛光时间之间的差异使用在线计量站测量的第一预抛光厚度和第二预抛光厚度来确定。基于第一预期所需抛光时间和第二预期所需抛光时间之间的差来确定初始周期的持续时间。在抛光操作开始时的初始阶段，对于第一基板和第二基板中的任一个具有较少预期的所需抛光时间，而对第一基板和第二基板中的哪一个施加压力同时施加压力更大的预期需要的抛光时间。在初始周期之后，对第一基板和第二基板施加压力。

3. 发明申请

US20090057264A1 HIGH THROUGHPUT LOW TOPOGRAPHY COPPER CMP PROCESS 审中-公开
标题翻译：高通量低地层铜沉积工艺
公开(公告)号：US20090057264A1
公开(公告)日：2009-03-05
申请号：US12201370
申请日：2008-08-29
申请人： DAVID H. MAI , Stephen Jew , Shih-Haur Walters Shen , Zhihong Wang
发明人： DAVID H. MAI , Stephen Jew , Shih-Haur Walters Shen , Zhihong Wang
IPC分类号： H01B13/00
CPC分类号： H01L21/3212 , B24B37/042
摘要： Embodiments described herein generally provide a method for processing metals disposed on a substrate in a chemical mechanical polishing system. The apparatus advantageously facilitates efficient bulk and residual conductive material removal from a substrate. In one embodiment a method for chemical mechanical polishing (CMP) of a conductive material disposed on a substrate is provided. A substrate comprising a conductive material disposed over an underlying barrier material is positioned on a first platen containing a first polishing pad. The substrate is polished on a first platen to remove a bulk portion of the conductive material. A rate quench process is performed in order to reduce a metal ion concentration in the polishing slurry. The substrate is polished on the first platen to breakthrough the conductive material exposing a portion of the underlying barrier material.
摘要翻译：本文描述的实施方案通常提供用于在化学机械抛光系统中处理设置在基底上的金属的方法。该装置有利地有助于从衬底去除有效的体积和残余导电材料。在一个实施例中，提供了一种用于设置在基板上的导电材料的化学机械抛光（CMP）的方法。包括设置在下面阻挡材料上方的导电材料的基板被定位在包含第一抛光垫的第一压板上。将衬底在第一压板上抛光以除去导电材料的主体部分。进行速率骤冷处理以减少抛光浆料中的金属离子浓度。衬底在第一压板上被抛光以穿透暴露一部分下面的阻挡材料的导电材料。

4. 发明授权

US08694144B2 Endpoint control of multiple substrates of varying thickness on the same platen in chemical mechanical polishing 失效
标题翻译：在化学机械抛光中在同一台板上对不同厚度的多个基板进行端点控制
公开(公告)号：US08694144B2
公开(公告)日：2014-04-08
申请号：US12871714
申请日：2010-08-30
申请人： Alain Duboust , Stephen Jew , David H. Mai , Huyen Tran , Wen-Chiang Tu , Shih-Haur Shen , Jimin Zhang , Ingemar Carlsson , Boguslaw A. Swedek , Zhihong Wang
发明人： Alain Duboust , Stephen Jew , David H. Mai , Huyen Tran , Wen-Chiang Tu , Shih-Haur Shen , Jimin Zhang , Ingemar Carlsson , Boguslaw A. Swedek , Zhihong Wang
IPC分类号： G06F19/00
CPC分类号： B24B37/013 , B24B37/042 , B65B1/366 , G06F17/5086 , H01L21/30625 , H01L22/12 , H01L22/20 , H01L22/26
摘要： A difference between a first expected required polish time for a first substrate and a second expected required polish time for a second substrate is determined using a first pre-polish thickness and a second pre-polish thickness measured at an in-line metrology station. A duration of an initial period is determined based on the difference between the first expected required polish time and the second expected required polish time. For the initial period at a beginning of a polishing operation, no pressure is applied to whichever of the first substrate and the second substrate has a lesser expected required polish time while simultaneously pressure is applied to whichever of the first substrate and the second substrate has a greater expected required polish time. After the initial period, pressure is applied to both the first substrate and the second substrate.
摘要翻译：第一衬底的第一预期所需抛光时间与第二衬底的第二预期所需抛光时间之间的差异使用在线计量站测量的第一预抛光厚度和第二预抛光厚度来确定。基于第一预期所需抛光时间和第二预期所需抛光时间之间的差来确定初始周期的持续时间。在抛光操作开始时的初始阶段，对于第一基板和第二基板中的任一个具有较少预期的所需抛光时间，而对第一基板和第二基板中的哪一个施加压力同时施加压力更大的预期需要的抛光时间。在初始周期之后，对第一基板和第二基板施加压力。

5. 发明申请

US20140024293A1 Control Of Overpolishing Of Multiple Substrates On the Same Platen In Chemical Mechanical Polishing 审中-公开
标题翻译：在化学机械抛光相同的台板上多台基板的抛光控制
公开(公告)号：US20140024293A1
公开(公告)日：2014-01-23
申请号：US13553209
申请日：2012-07-19
申请人： Jimin Zhang , Zhihong Wang , David H. Mai , Ingemar Carlsson , Stephen Jew , Boguslaw A. Swedek
发明人： Jimin Zhang , Zhihong Wang , David H. Mai , Ingemar Carlsson , Stephen Jew , Boguslaw A. Swedek
IPC分类号： B24B49/00 , B24B49/12 , B24B49/10
CPC分类号： B24B37/013 , B24B49/10 , B24B49/12
摘要： A polishing method includes simultaneously polishing a first substrate and a second substrate on the same polishing pad, storing a default overpolishing time, determining first and second polishing endpoint times of the first and substrates with the in-situ monitoring system, determining a difference between the first and second polishing endpoint times, and determining whether the difference exceeds a threshold. If the difference is less than the threshold, then an overpolishing stop time is calculated and polishing of the first substrate and the second substrates is halted simultaneously at the overpolishing stop time. If the difference is greater than the threshold, then first and second overpolishing stop times that equal the first and second endpoint times plus the default overpolishing time are calculated, and polishing of the first and second substrates is halted at the first and second overpolishing stop times, respectively.
摘要翻译：抛光方法包括同时在同一抛光垫上抛光第一基底和第二基底，存储默认的过度抛光时间，用原位监测系统确定第一和第二基底的第一和第二抛光终点时间，确定第一和第二抛光终点时间，以及确定差异是否超过阈值。如果差小于阈值，则计算过度抛光停止时间，并且在过度抛光停止时间同时停止第一基板和第二基板的抛光。如果该差值大于阈值，则计算等于第一和第二终点时间加上默认过度抛光时间的第一和第二过度抛光停止时间，并且在第一和第二过度抛光停止时间停止第一和第二基板的抛光，分别。

6. 发明申请

US20140004626A1 TEMPERATURE CONTROL OF CHEMICAL MECHANICAL POLISHING 有权
标题翻译：化学机械抛光温度控制
公开(公告)号：US20140004626A1
公开(公告)日：2014-01-02
申请号：US13539344
申请日：2012-06-30
申请人： KUN XU , Jimin Zhang , David H. Mai , Stephen Jew , Shih-Haur Walters Shen , Zhihong Wang , Thomas H. Osterheld , Wen-Chiang Tu , Gary Ka Ho Lam , Tomohiko Kitajima
发明人： KUN XU , Jimin Zhang , David H. Mai , Stephen Jew , Shih-Haur Walters Shen , Zhihong Wang , Thomas H. Osterheld , Wen-Chiang Tu , Gary Ka Ho Lam , Tomohiko Kitajima
IPC分类号： H01L21/66
CPC分类号： H01L21/302 , B24B37/015 , H01L21/304
摘要： Methods for chemical mechanical polishing (CMP) of semiconductor substrates, and more particularly to temperature control during such chemical mechanical polishing are provided. In one aspect, the method comprises polishing the substrate with a polishing surface during a polishing process to remove a portion of the conductive material, repeatedly monitoring a temperature of the polishing surface during the polishing process, and exposing the polishing surface to a rate quench process in response to the monitored temperature so as to achieve a target value for the monitored temperature during the polishing process.
摘要翻译：提供半导体衬底的化学机械抛光（CMP）的方法，更具体地说，涉及这种化学机械抛光时的温度控制。一方面，该方法包括在抛光过程中用抛光表面抛光衬底以去除导电材料的一部分，在抛光过程中反复监测抛光表面的温度，并将抛光表面暴露于速率骤冷过程响应于所监测的温度，以便在抛光过程中达到监测温度的目标值。

7. 发明申请

US20110300776A1 TUNING OF POLISHING PROCESS IN MULTI-CARRIER HEAD PER PLATEN POLISHING STATION 审中-公开
标题翻译：多功能抛光站多台车头抛光工艺的调试
公开(公告)号：US20110300776A1
公开(公告)日：2011-12-08
申请号：US12793389
申请日：2010-06-03
申请人： David H. Mai , Stephen Jew , Xiaoyuan (Sandra) Hu
发明人： David H. Mai , Stephen Jew , Xiaoyuan (Sandra) Hu
IPC分类号： B24B1/00
CPC分类号： B24B37/042
摘要： An apparatus and method for simulating a substrate being polished in a multiple carrier head per platen station when no substrate is provided in one or more of the multiple carrier heads is described. In one embodiment, a method for processing a substrate includes providing a single substrate to a polishing station adapted to process a plurality of substrates on a single polishing pad using at least a first carrier head and a second carrier head, retaining the single substrate in the first carrier head while the second carrier head remains substrate-free, urging the first carrier head and the second carrier head toward a polishing surface of the polishing pad; and providing relative movement between the polishing pad and the first carrier head.
摘要翻译：描述了在多个载体头中的一个或多个中没有设置基板时，模拟在每个压板站的多个载体头中被抛光的基板的装置和方法。在一个实施例中，用于处理衬底的方法包括向抛光站提供单个衬底，所述抛光站适于使用至少第一载体头和第二载体头在单个抛光垫上处理多个衬底，将单个衬底保持在第一载体头，而第二载体头保持无基材，将第一载体头和第二载体头推向抛光垫的抛光表面; 以及在所述抛光垫和所述第一承载头之间提供相对运动。

8. 发明授权

US09005999B2 Temperature control of chemical mechanical polishing 有权
标题翻译：化学机械抛光温度控制
公开(公告)号：US09005999B2
公开(公告)日：2015-04-14
申请号：US13539344
申请日：2012-06-30
申请人： Kun Xu , Jimin Zhang , David H. Mai , Stephen Jew , Shih-Haur Walters Shen , Zhihong Wang , Thomas H. Osterheld , Wen-Chiang Tu , Gary Ka Ho Lam , Tomohiko Kitajima
发明人： Kun Xu , Jimin Zhang , David H. Mai , Stephen Jew , Shih-Haur Walters Shen , Zhihong Wang , Thomas H. Osterheld , Wen-Chiang Tu , Gary Ka Ho Lam , Tomohiko Kitajima
IPC分类号： H01L21/00 , H01L21/302 , H01L21/304
CPC分类号： H01L21/302 , B24B37/015 , H01L21/304
摘要： Methods for chemical mechanical polishing (CMP) of semiconductor substrates, and more particularly to temperature control during such chemical mechanical polishing are provided. In one aspect, the method comprises polishing the substrate with a polishing surface during a polishing process to remove a portion of the conductive material, repeatedly monitoring a temperature of the polishing surface during the polishing process, and exposing the polishing surface to a rate quench process in response to the monitored temperature so as to achieve a target value for the monitored temperature during the polishing process.
摘要翻译：提供半导体衬底的化学机械抛光（CMP）的方法，更具体地说，涉及这种化学机械抛光时的温度控制。一方面，该方法包括在抛光过程中用抛光表面抛光衬底以去除导电材料的一部分，在抛光过程中反复监测抛光表面的温度，并将抛光表面暴露于速率骤冷过程响应于所监测的温度，以便在抛光过程中达到监测温度的目标值。

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