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1. 发明申请

US20100203719A1 Method of Forming an Antifuse and a Conductive Interconnect, and Methods of Forming DRAM Circuitry 有权
标题翻译：形成防静电和导电互连的方法以及形成DRAM电路的方法
公开(公告)号：US20100203719A1
公开(公告)日：2010-08-12
申请号：US12762766
申请日：2010-04-19
申请人： Jasper Gibbons , Darren Young
发明人： Jasper Gibbons , Darren Young
IPC分类号： H01L21/44
CPC分类号： H01L21/76831 , H01L23/5252 , H01L27/10814 , H01L27/10894 , H01L27/10897 , H01L2924/0002 , H01L2924/00
摘要： A first via opening is formed to a first conductor and a second via opening is formed to a second conductor. The first and second via openings are formed through insulative material. Then, the first conductor is masked from being exposed through the first via opening and to leave the second conductor outwardly exposed through the second via opening. An antifuse dielectric is formed within the second via opening over the exposed second conductor while the first conductor is masked. Then, the first conductor is unmasked to expose it through the first via opening. Then, conductive material is deposited to within the first via opening in conductive connection with the first conductor to form a conductive interconnect within the first via opening to the first conductor and to within the second via opening over the antifuse dielectric to form an antifuse comprising the second conductor, the antifuse dielectric within the second via opening and the conductive material deposited to within the second via opening. Other aspects are contemplated.
摘要翻译：第一通孔开口形成于第一导体，第二通孔开口形成于第二导体。第一和第二通孔开口通过绝缘材料形成。然后，第一导体被掩蔽不被暴露穿过第一通孔开口并且使第二导体通过第二通孔开口向外露出。在暴露的第二导体上的第二通孔开口内形成反熔丝电介质，同时第一导体被掩蔽。然后，第一导体被揭开以暴露它通过第一通孔开口。然后，导电材料沉积到第一通孔开口内，与第一导体导电连接，以在通向第一导体的第一通孔开口内并且在反熔丝电介质的第二通孔开口内形成导电互连，以形成反熔丝，第二导体，第二通孔开口内的反熔丝电介质和沉积到第二通孔内的导电材料。考虑其他方面。

2. 发明授权

US07713857B2 Methods of forming an antifuse and a conductive interconnect, and methods of forming DRAM circuitry 有权
标题翻译：形成反熔丝和导电互连的方法以及形成DRAM电路的方法
公开(公告)号：US07713857B2
公开(公告)日：2010-05-11
申请号：US12052607
申请日：2008-03-20
申请人： Jasper Gibbons , Darren Young
发明人： Jasper Gibbons , Darren Young
IPC分类号： H01L21/44 , H01L21/82
CPC分类号： H01L21/76831 , H01L23/5252 , H01L27/10814 , H01L27/10894 , H01L27/10897 , H01L2924/0002 , H01L2924/00
摘要： A first via opening is formed to a first conductor and a second via opening is formed to a second conductor. The first and second via openings are formed through insulative material. Then, the first conductor is masked from being exposed through the first via opening and to leave the second conductor outwardly exposed through the second via opening. An antifuse dielectric is formed within the second via opening over the exposed second conductor while the first conductor is masked. Then, the first conductor is unmasked to expose it through the first via opening. Then, conductive material is deposited to within the first via opening in conductive connection with the first conductor to form a conductive interconnect within the first via opening to the first conductor and to within the second via opening over the antifuse dielectric to form an antifuse comprising the second conductor, the antifuse dielectric within the second via opening and the conductive material deposited to within the second via opening. Other aspects are contemplated.
摘要翻译：第一通孔开口形成于第一导体，第二通孔开口形成于第二导体。第一和第二通孔开口通过绝缘材料形成。然后，第一导体被掩蔽不被暴露穿过第一通孔开口并且使第二导体通过第二通孔开口向外暴露。在暴露的第二导体上的第二通孔开口内形成反熔丝电介质，同时第一导体被掩蔽。然后，第一导体被揭开以暴露它通过第一通孔开口。然后，导电材料沉积到第一通孔开口内，与第一导体导电连接，以在通向第一导体的第一通孔开口内并且在反熔丝电介质的第二通孔开口内形成导电互连，以形成反熔丝，第二导体，第二通孔开口内的反熔丝电介质和沉积到第二通孔内的导电材料。考虑其他方面。

3. 发明申请

US20090239370A1 Methods Of Forming An Antifuse And A Conductive Interconnect, And Methods Of Forming DRAM Circuitry 有权
标题翻译：形成防静电和导电互连的方法以及形成DRAM电路的方法
公开(公告)号：US20090239370A1
公开(公告)日：2009-09-24
申请号：US12052607
申请日：2008-03-20
申请人： Jasper Gibbons , Darren Young
发明人： Jasper Gibbons , Darren Young
IPC分类号： H01L21/44
CPC分类号： H01L21/76831 , H01L23/5252 , H01L27/10814 , H01L27/10894 , H01L27/10897 , H01L2924/0002 , H01L2924/00
摘要： A first via opening is formed to a first conductor and a second via opening is formed to a second conductor. The first and second via openings are formed through insulative material. Then, the first conductor is masked from being exposed through the first via opening and to leave the second conductor outwardly exposed through the second via opening. An antifuse dielectric is formed within the second via opening over the exposed second conductor while the first conductor is masked. Then, the first conductor is unmasked to expose it through the first via opening. Then, conductive material is deposited to within the first via opening in conductive connection with the first conductor to form a conductive interconnect within the first via opening to the first conductor and to within the second via opening over the antifuse dielectric to form an antifuse comprising the second conductor, the antifuse dielectric within the second via opening and the conductive material deposited to within the second via opening. Other aspects are contemplated.
摘要翻译：第一通孔开口形成于第一导体，第二通孔开口形成于第二导体。第一和第二通孔开口通过绝缘材料形成。然后，第一导体被掩蔽不被暴露穿过第一通孔开口并且使第二导体通过第二通孔开口向外露出。在暴露的第二导体上的第二通孔开口内形成反熔丝电介质，同时第一导体被掩蔽。然后，第一导体被揭开以暴露它通过第一通孔开口。然后，导电材料沉积到第一通孔开口内，与第一导体导电连接，以在通向第一导体的第一通孔开口内并且在反熔丝电介质的第二通孔开口内形成导电互连，以形成反熔丝，第二导体，第二通孔开口内的反熔丝电介质和沉积到第二通孔内的导电材料。考虑其他方面。

4. 发明申请

US20090008615A1 ROLLER CHAIN AND SPROCKET SYSTEM 审中-公开
标题翻译：滚子链和阀座系统
公开(公告)号：US20090008615A1
公开(公告)日：2009-01-08
申请号：US12135877
申请日：2008-06-09
申请人： Darren YOUNG , Jed WOOD
发明人： Darren YOUNG , Jed WOOD
IPC分类号： B66F3/00
CPC分类号： B66F3/06 , E21B3/02 , F16G13/20 , F16H7/06 , F16H19/0636 , F16H55/30
摘要： A roller chain and sprocket system utilizes an involute profile on the sprocket teeth to engage rollers in the links of a roller chain. The links, when aligned linearly, bear upon one another when pushed to form a substantially rigid column which has an axis. The system results in substantially 100% of the rotational energy imparted to the sprocket being translated into linear motion of the chain along the column axis.
摘要翻译：滚子链和链轮系统利用链轮齿上的渐开线轮廓来接合滚子链的链节中的滚子。当被直线对准时，这些连杆在被推压时彼此承载以形成具有轴线的基本刚性的柱。该系统导致施加到链轮的基本上100％的旋转能量被转换成链沿着列轴线的直线运动。

5. 发明申请

US20070262395A1 Memory cell access devices and methods of making the same 审中-公开
标题翻译：存储单元访问设备及其制作方法
公开(公告)号：US20070262395A1
公开(公告)日：2007-11-15
申请号：US11432442
申请日：2006-05-11
申请人： Jasper Gibbons , Darren Young , Kunal Parekh , Casey Smith
发明人： Jasper Gibbons , Darren Young , Kunal Parekh , Casey Smith
IPC分类号： H01L29/94
CPC分类号： H01L29/4236 , H01L21/823425 , H01L21/82345 , H01L29/407 , H01L29/66621 , H01L29/7831
摘要： Planar access transistor devices and recessed access transistor devices used with semiconductor devices may include gate electrodes having materials with multiple work functions, materials that are electrically isolated from each other and supplied with two or more voltage supplies, or materials that create a diode junction within the gate electrode. Access device drivers are also provided which are capable of driving distinct or identical voltages to the gate electrodes.
摘要翻译：与半导体器件一起使用的平面存取晶体管器件和凹槽存取晶体管器件可以包括具有多个功函数的材料的栅电极，彼此电隔离并且被提供有两个或更多个电压源的材料，或在其内产生二极管结的材料栅电极。还提供了能够驱动与栅电极不同或相同电压的访问设备驱动器。

6. 发明授权

US07888255B2 Method of forming an antifuse and a conductive interconnect, and methods of forming DRAM circuitry 有权
标题翻译：形成反熔丝和导电互连的方法，以及形成DRAM电路的方法
公开(公告)号：US07888255B2
公开(公告)日：2011-02-15
申请号：US12762766
申请日：2010-04-19
申请人： Jasper Gibbons , Darren Young
发明人： Jasper Gibbons , Darren Young
IPC分类号： H01L21/44 , H01L21/3205 , H01L21/4763 , H01L21/82 , H01L21/336
CPC分类号： H01L21/76831 , H01L23/5252 , H01L27/10814 , H01L27/10894 , H01L27/10897 , H01L2924/0002 , H01L2924/00
摘要： A first via opening is formed to a first conductor and a second via opening is formed to a second conductor. The first and second via openings are formed through insulative material. Then, the first conductor is masked from being exposed through the first via opening and to leave the second conductor outwardly exposed through the second via opening. An antifuse dielectric is formed within the second via opening over the exposed second conductor while the first conductor is masked. Then, the first conductor is unmasked to expose it through the first via opening. Then, conductive material is deposited to within the first via opening in conductive connection with the first conductor to form a conductive interconnect within the first via opening to the first conductor and to within the second via opening over the antifuse dielectric to form an antifuse comprising the second conductor, the antifuse dielectric within the second via opening and the conductive material deposited to within the second via opening. Other aspects are contemplated.
摘要翻译：第一通孔开口形成于第一导体，第二通孔开口形成于第二导体。第一和第二通孔开口通过绝缘材料形成。然后，第一导体被掩蔽不被暴露穿过第一通孔开口并且使第二导体通过第二通孔开口向外露出。在暴露的第二导体上的第二通孔开口内形成反熔丝电介质，同时第一导体被掩蔽。然后，第一导体被揭开以暴露它通过第一通孔开口。然后，导电材料沉积到第一通孔开口内，与第一导体导电连接，以在通向第一导体的第一通孔开口内并且在反熔丝电介质的第二通孔开口内形成导电互连，以形成反熔丝，第二导体，第二通孔开口内的反熔丝电介质和沉积到第二通孔内的导电材料。考虑其他方面。

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