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1. 发明申请

US20060070640A1 Method and system for injecting chemistry into a supercritical fluid 审中-公开
标题翻译：将化学物质注入超临界流体的方法和系统
公开(公告)号：US20060070640A1
公开(公告)日：2006-04-06
申请号：US10957417
申请日：2004-10-01
申请人： Darko Babic , Carl White , Wayne Parent
发明人： Darko Babic , Carl White , Wayne Parent
IPC分类号： C23G1/00 , B08B7/04 , B08B7/00 , B08B3/12 , B08B3/00
CPC分类号： H01L21/67028 , B08B7/0021 , H01L21/67023
摘要： A method and system is described for introducing chemistry into a high pressure fluid for treating a substrate. In particular, the method includes dispersing the chemistry throughout the volume of high pressure fluid in order to promote mixing of the two or more fluids, while the high pressure fluid is circulating through a high pressure processing system.
摘要翻译：描述了用于将化学物质引入用于处理基底的高压流体中的方法和系统。特别地，该方法包括将化学物质分散在整个体积的高压流体中，以便在高压流体循环通过高压处理系统时促进两种或多种流体的混合。

2. 发明申请

US20060065288A1 Supercritical fluid processing system having a coating on internal members and a method of using 审中-公开
标题翻译：具有在内部构件上的涂层的超临界流体处理系统和使用方法
公开(公告)号：US20060065288A1
公开(公告)日：2006-03-30
申请号：US10955927
申请日：2004-09-30
申请人： Darko Babic , Carl White , Alexei Sheydayi
发明人： Darko Babic , Carl White , Alexei Sheydayi
IPC分类号： C23G1/00 , B08B5/04 , B08B3/12
CPC分类号： G03F7/422 , B08B7/0021 , B08B17/06
摘要： A processing system utilizing a supercritical fluid for treating a substrate is described as having internal members having a coating. For example, the coating in internal members can reduce particulate contamination during processing. Additionally, a method for using the processing system is described.
摘要翻译：将利用超临界流体处理基板的处理系统描述为具有涂层的内部部件。例如，内部构件中的涂层可以减少加工过程中的颗粒污染。另外，描述了使用处理系统的方法。

3. 发明申请

US20060065189A1 Method and system for homogenization of supercritical fluid in a high pressure processing system 审中-公开
标题翻译：高压处理系统中超临界流体均质化的方法和系统
公开(公告)号：US20060065189A1
公开(公告)日：2006-03-30
申请号：US10955325
申请日：2004-09-30
申请人： Darko Babic , Gentaro Goshi
发明人： Darko Babic , Gentaro Goshi
IPC分类号： B08B7/04 , C23C14/00 , B08B3/00 , B05C11/00
CPC分类号： H01L21/67034 , B08B7/0021 , H01L21/67017
摘要： A method and system for providing a homogeneous processing environment in a high pressure processing system is described. A high pressure fluid and a process chemistry are mixed in a pre-mixing system prior to exposure with the fluid in a supercritical state of a substrate in the high pressure processing system. For example, the pre-mixing system can include a fluid circulation system configured to bypass the high pressure processing system until the high pressure fluid and the process chemistry are mixed. Alternatively, the pre-mixing system can include a mixing chamber, and optionally include means for agitating the high pressure fluid and process chemistry in the mixing chamber.
摘要翻译：描述了一种用于在高压处理系统中提供均匀处理环境的方法和系统。在高压处理系统中的衬底的超临界状态的流体暴露之前，将高压流体和工艺化学物质混合在预混合系统中。例如，预混合系统可以包括配置成绕过高压处理系统直到高压流体和工艺化学物质混合的流体循环系统。或者，预混合系统可以包括混合室，并且任选地包括用于搅拌高压流体和在混合室中处理化学物质的装置。

4. 发明授权

US09359672B2 Reaction system for growing a thin film 有权
公开(公告)号：US09359672B2
公开(公告)日：2016-06-07
申请号：US13529223
申请日：2012-06-21
申请人： Mohith Verghese , Kyle Fondurulia , Carl White , Eric Shero , Darko Babic , Herbert Terhorst , Marko Peussa , Min Yan
发明人： Mohith Verghese , Kyle Fondurulia , Carl White , Eric Shero , Darko Babic , Herbert Terhorst , Marko Peussa , Min Yan
IPC分类号： C23C16/455 , C23C16/458 , C23C16/44 , C30B35/00 , H01L21/67 , H01L21/687
CPC分类号： H01L21/68785 , C23C16/4408 , C23C16/455 , C23C16/45517 , C23C16/45525 , C23C16/45544 , C23C16/45561 , C23C16/45563 , C23C16/45582 , C23C16/45587 , C23C16/45591 , C23C16/458 , C23C16/4582 , C23C16/4583 , C23C16/4586 , C30B35/00 , H01L21/67236 , H01L21/68714 , H01L21/68742
摘要： An atomic deposition (ALD) thin film deposition apparatus includes a deposition chamber configured to deposit a thin film on a wafer mounted within a space defined therein. The deposition chamber comprises a gas inlet that is in communication with the space. A gas system is configured to deliver gas to the gas inlet of the deposition chamber. At least a portion of the gas system is positioned above the deposition chamber. The gas system includes a mixer configured to mix a plurality of gas streams. A transfer member is in fluid communication with the mixer and the gas inlet. The transfer member comprising a pair of horizontally divergent walls configured to spread the gas in a horizontal direction before entering the gas inlet.

5. 发明申请

US20060065636A1 Method and system for controlling a velocity field of a supercritical fluid in a processing system 失效
公开(公告)号：US20060065636A1
公开(公告)日：2006-03-30
申请号：US10955326
申请日：2004-09-30
申请人： Darko Babic
发明人： Darko Babic
IPC分类号： B08B6/00 , C23F1/00
CPC分类号： C23F1/02 , B08B7/0021 , C23F1/10 , C23F1/12 , H01L21/67028
摘要： A method and system for controlling a velocity field in a processing system is described. In an exemplary embodiment described, the system includes a multi-outlet exhaust manifold having three or more outlets coupled to the processing system adjacent a surface of a substrate to be process. The three or more outlets are located adjacent the substrate in order to provide for a uniform flow of fluid above the surface of the substrate. Additionally, the flow of fluid through the three or more outlets is cyclically and sequentially alternated.

6. 发明授权

US08211230B2 Reaction system for growing a thin film 有权
标题翻译：用于生长薄膜的反应体系
公开(公告)号：US08211230B2
公开(公告)日：2012-07-03
申请号：US11333127
申请日：2006-01-17
申请人： Mohith Verghese , Kyle Fondurulia , Carl White , Eric Shero , Darko Babic , Herbert Terhorst , Marko Peussa , Min Yan
发明人： Mohith Verghese , Kyle Fondurulia , Carl White , Eric Shero , Darko Babic , Herbert Terhorst , Marko Peussa , Min Yan
IPC分类号： C23C16/455 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： H01L21/68785 , C23C16/4408 , C23C16/455 , C23C16/45517 , C23C16/45525 , C23C16/45544 , C23C16/45561 , C23C16/45563 , C23C16/45582 , C23C16/45587 , C23C16/45591 , C23C16/458 , C23C16/4582 , C23C16/4583 , C23C16/4586 , C30B35/00 , H01L21/67236 , H01L21/68714 , H01L21/68742
摘要： An atomic deposition (ALD) thin film deposition apparatus includes a deposition chamber configured to deposit a thin film on a wafer mounted within a space defined therein. The deposition chamber comprises a gas inlet that is in communication with the space. A gas system is configured to deliver gas to the gas inlet of the deposition chamber. At least a portion of the gas system is positioned above the deposition chamber. The gas system includes a mixer configured to mix a plurality of gas streams. A transfer member is in fluid communication with the mixer and the gas inlet. The transfer member comprising a pair of horizontally divergent walls configured to spread the gas in a horizontal direction before entering the gas inlet.
摘要翻译：原子沉积（ALD）薄膜沉积设备包括沉积室，其被配置为将薄膜沉积在安装在其中限定的空间内的晶片上。沉积室包括与空间连通的气体入口。气体系统构造成将气体输送到沉积室的气体入口。气体系统的至少一部分位于沉积室上方。气体系统包括配置成混合多个气流的混合器。转移构件与混合器和气体入口流体连通。传送构件包括一对水平扩散壁，其构造成在进入气体入口之前沿水平方向扩展气体。

7. 发明申请

US20060134332A1 Precompressed coating of internal members in a supercritical fluid processing system 审中-公开
标题翻译：超临界流体处理系统内部部件的预压涂层
公开(公告)号：US20060134332A1
公开(公告)日：2006-06-22
申请号：US11022563
申请日：2004-12-22
申请人： Darko Babic
发明人： Darko Babic
IPC分类号： B08B3/00 , B05D3/00
CPC分类号： H01L21/6704
摘要： A processing system utilizing a supercritical fluid for treating a substrate is described as having internal members having a coating and coated internal members for such a system, with the coating prestressed to reduce the problem of generating coating stresses during processing. For example, the coating in internal members can reduce particulate contamination during processing. Additionally, a method for applying the coating to the internal member of the processing system is described, whereby stresses within the coating are relieved in the coating when the part is used in high pressure processing. The method is particularly useful for preventing or reducing high tensile stresses in coatings during high pressure processing.
摘要翻译：描述了利用超临界流体处理基板的处理系统具有内部构件，其具有用于这种系统的涂层和涂覆的内部构件，预涂的涂层减少了在加工期间产生涂层应力的问题。例如，内部构件中的涂层可以减少加工过程中的颗粒污染。此外，描述了将涂层施加到处理系统的内部构件的方法，由此当该部件用于高压处理时，涂层内的应力被释放。该方法对于在高压处理期间防止或降低涂层中的高拉伸应力特别有用。

8. 发明申请

US20060130966A1 Method and system for flowing a supercritical fluid in a high pressure processing system 审中-公开
标题翻译：在高压处理系统中流动超临界流体的方法和系统
公开(公告)号：US20060130966A1
公开(公告)日：2006-06-22
申请号：US11018922
申请日：2004-12-20
申请人： Darko Babic , Eric Strang
发明人： Darko Babic , Eric Strang
IPC分类号： H01L21/306
CPC分类号： H01L21/02101 , G03F7/423 , H01L21/67057
摘要： A method and system is described for treating a substrate with a supercritical fluid using a high temperature process. For example, when the supercritical fluid includes carbon dioxide in a supercritical state, the high temperature process is performed at a temperature approximately equal to and exceeding 80 degrees C., which is greater than the critical temperature of approximately 31 degrees C.
摘要翻译：描述了使用高温处理用超临界流体处理衬底的方法和系统。例如，当超临界流体包括处于超临界状态的二氧化碳时，高温处理在大约等于并超过80℃的温度下进行，该温度大于约31℃的临界温度。

9. 发明申请

US20120266821A1 REACTION SYSTEM FOR GROWING A THIN FILM 有权
标题翻译：用于生成薄膜的反应体系
公开(公告)号：US20120266821A1
公开(公告)日：2012-10-25
申请号：US13529223
申请日：2012-06-21
申请人： Mohith Verghese , Kyle Fondurulia , Carl White , Eric Shero , Darko Babic , Herbert Terhorst , Marko Peussa , Min Yan
发明人： Mohith Verghese , Kyle Fondurulia , Carl White , Eric Shero , Darko Babic , Herbert Terhorst , Marko Peussa , Min Yan
IPC分类号： C23C16/458
CPC分类号： H01L21/68785 , C23C16/4408 , C23C16/455 , C23C16/45517 , C23C16/45525 , C23C16/45544 , C23C16/45561 , C23C16/45563 , C23C16/45582 , C23C16/45587 , C23C16/45591 , C23C16/458 , C23C16/4582 , C23C16/4583 , C23C16/4586 , C30B35/00 , H01L21/67236 , H01L21/68714 , H01L21/68742
摘要： An atomic deposition (ALD) thin film deposition apparatus includes a deposition chamber configured to deposit a thin film on a wafer mounted within a space defined therein. The deposition chamber comprises a gas inlet that is in communication with the space. A gas system is configured to deliver gas to the gas inlet of the deposition chamber. At least a portion of the gas system is positioned above the deposition chamber. The gas system includes a mixer configured to mix a plurality of gas streams. A transfer member is in fluid communication with the mixer and the gas inlet. The transfer member comprising a pair of horizontally divergent walls configured to spread the gas in a horizontal direction before entering the gas inlet.
摘要翻译：原子沉积（ALD）薄膜沉积设备包括沉积室，其被配置为将薄膜沉积在安装在其中限定的空间内的晶片上。沉积室包括与空间连通的气体入口。气体系统被配置为将气体输送到沉积室的气体入口。气体系统的至少一部分位于沉积室上方。气体系统包括配置成混合多个气流的混合器。转移构件与混合器和气体入口流体连通。传送构件包括一对水平扩散壁，其构造成在进入气体入口之前沿水平方向扩展气体。

10. 发明授权

US07582181B2 Method and system for controlling a velocity field of a supercritical fluid in a processing system 失效
标题翻译：用于控制处理系统中超临界流体的速度场的方法和系统
公开(公告)号：US07582181B2
公开(公告)日：2009-09-01
申请号：US10955326
申请日：2004-09-30
申请人： Darko Babic
发明人： Darko Babic
IPC分类号： C23C16/00
CPC分类号： C23F1/02 , B08B7/0021 , C23F1/10 , C23F1/12 , H01L21/67028
摘要： A method and system for controlling a velocity field in a processing system is described. In an exemplary embodiment described, the system includes a multi-outlet exhaust manifold having three or more outlets coupled to the processing system adjacent a surface of a substrate to be process. The three or more outlets are located adjacent the substrate in order to provide for a uniform flow of fluid above the surface of the substrate. Additionally, the flow of fluid through the three or more outlets is cyclically and sequentially alternated.
摘要翻译：描述了一种用于控制处理系统中的速度场的方法和系统。在所描述的示例性实施例中，该系统包括具有三个或更多个出口的多出口排气歧管，该出口歧管与邻近待处理基板的表面的处理系统相连。三个或更多个出口位于基底附近，以提供在基底表面上方的均匀流动的流体。此外，通过三个或更多个出口的流体流循环地且顺序地交替。

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