专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07437631B2 Soft errors handling in EEPROM devices 失效
标题翻译： EEPROM器件中的软错误处理
公开(公告)号：US07437631B2
公开(公告)日：2008-10-14
申请号：US10917870
申请日：2004-08-13
申请人： Daniel L. Auclair , Jeffrey Craig , John S. Mangan , Robert D. Norman , Daniel C. Guterman , Sanjay Mehrotra
发明人： Daniel L. Auclair , Jeffrey Craig , John S. Mangan , Robert D. Norman , Daniel C. Guterman , Sanjay Mehrotra
IPC分类号： G11C29/00
CPC分类号： G11C29/028 , G06F11/1068 , G06F11/1072 , G06F2201/81 , G11C16/04 , G11C16/10 , G11C16/3431 , G11C29/50 , G11C29/50004 , G11C29/52 , G11C2029/5004 , G11C2029/5006
摘要： Soft errors occur during normal use of a solid-state memory such as EEPROM or Flash EEPROM. A soft error results from the programmed threshold voltage of a memory cell being drifted from its originally intended level. The error is initially not readily detected during normal read until the cumulative drift becomes so severe that it develops into a hard error. Data could be lost if enough of these hard errors swamps available error correction codes in the memory. A memory device and techniques therefor are capable of detecting these drifts and substantially maintaining the threshold voltage of each memory cell to its intended level throughout the use of the memory device, thereby resisting the development of soft errors into hard errors.
摘要翻译：正常使用固态存储器（如EEPROM或闪存EEPROM）时会发生软错误。存储器单元的编程阈值电压从原来的预期电平漂移导致软错误。在正常读取期间，最初不容易检测到该误差，直到累积漂移变得如此严重以致其发展为硬错误。数据可能会丢失，如果这些硬错误足够的可以在存储器中发出可用的纠错码。一种存储器件及其技术能够在整个使用存储器件的过程中检测这些漂移并且将每个存储器单元的阈值电压基本上保持在其预期的水平，从而抵抗将软错误发展成硬错误。

2. 外观设计

USD439579S1 Memory card reader 失效
标题翻译：存储卡读卡器
公开(公告)号：USD439579S1
公开(公告)日：2001-03-27
申请号：US29114371
申请日：1999-11-22
申请人： Daniel L. Auclair , Leon Malmed , Anthony J. Knights , Johnny H. Chen
设计人： Daniel L. Auclair , Leon Malmed , Anthony J. Knights , Johnny H. Chen

3. 发明授权

US07839685B2 Soft errors handling in EEPROM devices 有权
标题翻译： EEPROM器件中的软错误处理
公开(公告)号：US07839685B2
公开(公告)日：2010-11-23
申请号：US12572098
申请日：2009-10-01
申请人： Daniel L. Auclair , Jeffrey Craig , John S. Mangan , Robert D. Norman , Daniel C. Guterman , Sanjay Mehrotra
发明人： Daniel L. Auclair , Jeffrey Craig , John S. Mangan , Robert D. Norman , Daniel C. Guterman , Sanjay Mehrotra
IPC分类号： G11C16/06 , G11C16/04
CPC分类号： G11C29/028 , G06F11/1068 , G06F11/1072 , G06F2201/81 , G11C16/04 , G11C16/10 , G11C16/3431 , G11C29/50 , G11C29/50004 , G11C29/52 , G11C2029/5004 , G11C2029/5006
摘要： Soft errors occur during normal use of a solid-state memory such as EEPROM or Flash EEPROM. A soft error results from the programmed threshold voltage of a memory cell being drifted from its originally intended level. The error is initially not readily detected during normal read until the cumulative drift becomes so severe that it develops into a hard error. Data could be lost if enough of these hard errors swamps available error correction codes in the memory. A memory device and techniques therefor are capable of detecting these drifts and substantially maintaining the threshold voltage of each memory cell to its intended level throughout the use of the memory device, thereby resisting the development of soft errors into hard errors.
摘要翻译：正常使用固态存储器（如EEPROM或闪存EEPROM）时会发生软错误。存储器单元的编程阈值电压从原来的预期电平漂移导致软错误。在正常读取期间，最初不容易检测到该误差，直到累积漂移变得如此严重以致其发展为硬错误。数据可能会丢失，如果这些硬错误足够的可以在存储器中发出可用的纠错码。一种存储器件及其技术能够在整个使用存储器件的过程中检测这些漂移并且将每个存储器单元的阈值电压基本上保持在其预期的水平，从而抵抗将软错误发展成硬错误。

4. 发明授权

US5657332A Soft errors handling in EEPROM devices 失效
标题翻译： EEPROM器件中的软错误处理
公开(公告)号：US5657332A
公开(公告)日：1997-08-12
申请号：US406677
申请日：1995-03-20
申请人： Daniel L. Auclair , Jeffrey Craig , John S. Mangan , Robert D. Norman , Daniel C. Guterman , Sanjay Mehrotra
发明人： Daniel L. Auclair , Jeffrey Craig , John S. Mangan , Robert D. Norman , Daniel C. Guterman , Sanjay Mehrotra
IPC分类号： G06F11/10 , G11C16/10 , G11C29/50 , G11C29/52 , G11C29/00 , G11C11/34
CPC分类号： G11C29/028 , G11C16/10 , G11C16/3431 , G11C29/50 , G11C29/50004 , G11C29/52 , G06F11/1068 , G06F11/1072 , G06F2201/81 , G11C16/04 , G11C2029/5004 , G11C2029/5006
摘要： Soft errors occur during normal use of a solid-state memory such as EEPROM or Flash EEPROM. A soft error results from the programmed threshold voltage of a memory cell being drifted from its originally intended level. The error is initially not readily detected during normal read until the cumulative drift becomes so severe that it develops into a hard error. Data could be lost if enough of these hard errors swamps available error correction codes in the memory. A memory device and techniques therefor are capable of detecting these drifts and substantially maintaining the threshold voltage of each memory cell to its intended level throughout the use of the memory device, thereby resisting the development of soft errors into hard errors.
摘要翻译：正常使用固态存储器（如EEPROM或闪存EEPROM）时会发生软错误。存储器单元的编程阈值电压从原来的预期电平漂移导致软错误。在正常读取期间，最初不容易检测到该误差，直到累积漂移变得如此严重以致其发展为硬错误。数据可能会丢失，如果这些硬错误足够的可以在存储器中发出可用的纠错码。一种存储器件及其技术能够在整个使用存储器件的过程中检测这些漂移并且将每个存储器单元的阈值电压基本上保持在其预期的水平，从而抵抗将软错误发展成硬错误。

5. 发明授权

US5532962A Soft errors handling in EEPROM devices 失效
公开(公告)号：US5532962A
公开(公告)日：1996-07-02
申请号：US408109
申请日：1995-03-21
申请人： Daniel L. Auclair , Jeffrey Craig , John S. Mangan , Robert D. Norman , Daniel C. Guterman , Sanjay Mehrotra
发明人： Daniel L. Auclair , Jeffrey Craig , John S. Mangan , Robert D. Norman , Daniel C. Guterman , Sanjay Mehrotra
IPC分类号： G06F11/10 , G11C16/34 , G11C29/50 , G11C29/00
CPC分类号： G06F11/1008 , G11C16/3418 , G11C16/3431 , G11C16/3436 , G11C16/3445 , G11C16/3459 , G11C29/028 , G11C29/50 , G11C29/50004 , G06F2201/81 , G11C16/04
摘要： Soft errors occur during normal use of a solid-state memory such as EEPROM or Flash EEPROM. A soft error results from the programmed threshold voltage of a memory cell being drifted from its originally intended level. The error is initially not readily detected during normal read until the cumulative drift becomes so severe that it develops into a hard error. Data could be lost if enough of these hard errors swamps available error correction codes in the memory. A memory device and techniques therefor are capable of detecting these drifts and substantially maintaining the threshold voltage of each memory cell to its intended level throughout the use of the memory device, thereby resisting the development of soft errors into hard errors.

6. 发明授权

US6049899A Soft errors handling in EEPROM devices 失效
公开(公告)号：US6049899A
公开(公告)日：2000-04-11
申请号：US113800
申请日：1998-07-08
申请人： Daniel L. Auclair , Jeffrey Craig , John S. Mangan , Robert D. Norman , Daniel C. Guterman , Sanjay Mehrotra
发明人： Daniel L. Auclair , Jeffrey Craig , John S. Mangan , Robert D. Norman , Daniel C. Guterman , Sanjay Mehrotra
IPC分类号： G06F11/10 , G11C16/10 , G11C29/50 , G11C29/52 , H03M13/00
CPC分类号： G11C29/028 , G11C16/10 , G11C16/3431 , G11C29/50 , G11C29/50004 , G11C29/52 , G06F11/1068 , G06F11/1072 , G06F2201/81 , G11C16/04 , G11C2029/5004 , G11C2029/5006
摘要： Soft errors occur during normal use of a solid-state memory such as EEPROM or Flash EEPROM. A soft error results from the programmed threshold voltage of a memory cell being drifted from its originally intended level. The error is initially not readily detected during normal read until the cumulative drift becomes so severe that it develops into a hard error. Data could be lost if enough of these hard errors swamps available error correction codes in the memory. A memory device and techniques therefor are capable of detecting these drifts and substantially maintaining the threshold voltage of each memory cell to its intended level throughout the use of the memory device, thereby resisting the development of soft errors into hard errors.

7. 发明授权

US6016530A Mass computer storage system having both solid state and rotating disk types of memory 失效
标题翻译：大容量计算机存储系统具有固态和旋转盘类型的存储器
公开(公告)号：US6016530A
公开(公告)日：2000-01-18
申请号：US63748
申请日：1998-04-21
申请人： Daniel L. Auclair , Eliyahou Harari
发明人： Daniel L. Auclair , Eliyahou Harari
IPC分类号： G06F3/06 , G06F12/06 , G06F12/10
CPC分类号： G06F3/068 , G06F3/0625 , G06F3/0634 , Y02B60/1246
摘要： Solid-state flash electrically erasable and programmable read-only-memory ("flash EEPROM") system is combined with a rotating disk drive memory to provide mass program and data storage in a computer system. A common memory controller directs system generated memory addresses in a disk format to either the EEPROM system or disk memory. The blocks of data handled by the EEPROM system have the same size and other attributes as sectors of data handled by the disk system, thereby making it transparent to the computer system processor as to whether it is accessing the EEPROM or disk portion of the storage system. A particular program or data file may then be stored in the portion of the memory system best suited to handle it, and thus take advantage of the different features and characteristics of EEPROM and magnetic media disk memory.
摘要翻译：固态闪存电可擦除和可编程只读存储器（“闪存EEPROM”）系统与旋转磁盘驱动器存储器组合，可在计算机系统中提供大规模程序和数据存储。一个通用的存储器控制器将系统产生的磁盘格式的存储器地址引导到EEPROM系统或磁盘存储器。由EEPROM系统处理的数据块具有与盘系统处理的数据扇区相同的大小和其他属性，从而使其对于计算机系统处理器是否是访问存储系统的EEPROM或磁盘部分是透明的。然后可以将特定的程序或数据文件存储在最适于处理它的存储器系统的部分中，并且因此利用EEPROM和磁性介质盘存储器的不同特征和特性。

8. 发明授权

US5778418A Mass computer storage system having both solid state and rotating disk types of memory 失效
公开(公告)号：US5778418A
公开(公告)日：1998-07-07
申请号：US287107
申请日：1994-08-08
申请人： Daniel L. Auclair , Eliyahou Harari
发明人： Daniel L. Auclair , Eliyahou Harari
IPC分类号： G06F3/06 , G06F12/00
CPC分类号： G06F3/068 , G06F3/0625 , G06F3/0634 , Y02B60/1246
摘要： Solid-state flash electrically erasable and programmable read-only-memory ("flash EEPROM") system is combined with a rotating disk drive memory to provide mass program and data storage in a computer system. A common memory controller directs system generated memory addresses in a disk format to either the EEPROM system or disk memory. The blocks of data handled by the EEPROM system have the same size and other attributes as sectors of data handled by the disk system, thereby making it transparent to the computer system processor as to whether it is accessing the EEPROM or disk portion of the storage system. A particular program or data file may then be stored in the portion of the memory system best suited to handle it, and thus take advantage of the different features and characteristics of EEPROM and magnetic media disk memory.

9. 发明授权

US07616484B2 Soft errors handling in EEPROM devices 失效
标题翻译： EEPROM器件中的软错误处理
公开(公告)号：US07616484B2
公开(公告)日：2009-11-10
申请号：US10974366
申请日：2004-10-26
申请人： Daniel L. Auclair , Jeffrey Craig , John S. Mangan , Robert D. Norman , Daniel C. Guterman , Sanjay Mehrotra
发明人： Daniel L. Auclair , Jeffrey Craig , John S. Mangan , Robert D. Norman , Daniel C. Guterman , Sanjay Mehrotra
IPC分类号： G11C16/06 , G11C16/04 , G11C29/00 , G08C25/00
CPC分类号： G11C29/028 , G06F11/1068 , G06F11/1072 , G06F2201/81 , G11C16/04 , G11C16/10 , G11C16/3431 , G11C29/50 , G11C29/50004 , G11C29/52 , G11C2029/5004 , G11C2029/5006
摘要： Soft errors occur during normal use of a solid-state memory such as EEPROM or Flash EEPROM. A soft error results from the programmed threshold voltage of a memory cell being drifted from its originally intended level. The error is initially not readily detected during normal read until the cumulative drift becomes so severe that it develops into a hard error. Data could be lost if enough of these hard errors swamps available error correction codes in the memory. A memory device and techniques therefor are capable of detecting these drifts and substantially maintaining the threshold voltage of each memory cell to its intended level throughout the use of the memory device, thereby resisting the development of soft errors into hard errors.
摘要翻译：正常使用固态存储器（如EEPROM或闪存EEPROM）时会发生软错误。存储器单元的编程阈值电压从原来的预期电平漂移导致软错误。在正常读取期间，最初不容易检测到该误差，直到累积漂移变得如此严重以致其发展为硬错误。数据可能会丢失，如果这些硬错误足够的可以在存储器中发出可用的纠错码。一种存储器件及其技术能够在整个使用存储器件的过程中检测这些漂移并且将每个存储器单元的阈值电压基本上保持在其预期的水平，从而抵抗将软错误发展成硬错误。

10. 发明申请

US20100020616A1 Soft Errors Handling in EEPROM Devices 有权
标题翻译： EEPROM设备中的软错误处理
公开(公告)号：US20100020616A1
公开(公告)日：2010-01-28
申请号：US12572098
申请日：2009-10-01
申请人： Daniel L. Auclair , Jeffrey Craig , John S. Mangan , Robert D. Norman , Daniel C. Guterman , Sanjay Mehrotra
发明人： Daniel L. Auclair , Jeffrey Craig , John S. Mangan , Robert D. Norman , Daniel C. Guterman , Sanjay Mehrotra
IPC分类号： G11C16/04
CPC分类号： G11C29/028 , G06F11/1068 , G06F11/1072 , G06F2201/81 , G11C16/04 , G11C16/10 , G11C16/3431 , G11C29/50 , G11C29/50004 , G11C29/52 , G11C2029/5004 , G11C2029/5006
摘要： Soft errors occur during normal use of a solid-state memory such as EEPROM or Flash EEPROM. A soft error results from the programmed threshold voltage of a memory cell being drifted from its originally intended level. The error is initially not readily detected during normal read until the cumulative drift becomes so severe that it develops into a hard error. Data could be lost if enough of these hard errors swamps available error correction codes in the memory. A memory device and techniques therefor are capable of detecting these drifts and substantially maintaining the threshold voltage of each memory cell to its intended level throughout the use of the memory device, thereby resisting the development of soft errors into hard errors.
摘要翻译：正常使用固态存储器（如EEPROM或闪存EEPROM）时会发生软错误。存储器单元的编程阈值电压从原来的预期电平漂移导致软错误。在正常读取期间，最初不容易检测到该误差，直到累积漂移变得如此严重以致其发展为硬错误。数据可能会丢失，如果这些硬错误足够的可以在存储器中发出可用的纠错码。一种存储器件及其技术能够在整个使用存储器件的过程中检测这些漂移并且将每个存储器单元的阈值电压基本上保持在其预期的水平，从而抵抗将软错误发展成硬错误。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式