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    • 5. 发明授权
    • Method for controlling the crystal morphology of silicon nitride
    • 控制氮化硅晶体形态的方法
    • US4788049A
    • 1988-11-29
    • US842597
    • 1986-03-21
    • Robert A. LongHarrison ShallenbergerDale E. Wittmer
    • Robert A. LongHarrison ShallenbergerDale E. Wittmer
    • C01B21/068C30B25/00C01B33/06
    • C01B21/068C30B25/005C30B29/38C01P2004/03C01P2004/10C01P2006/10
    • A method is disclosed for producing silicon nitride wherein the crystal morphology is controlled. The method involves heating a mixture consisting essentially of a chlorosilane and ammonia at a sufficient temperature for a sufficient time to produce a nitogen containing silane as an intermediate. The bulk density of the intermediate is controlled to less than about 0.1 g/cc to result in the silicon nitride having a crystal morphology which is essentially all fibrous, or the bulk density can be controlled to greater than about 0.3 g/cc to result in the silicon nitride having a crystal morphology which is essentially all equiaxial, or the bulk density can be controlled to between about 0.1 g/cc and about 0.3 g/cc to result in the silicon nitride having a crystal morphology which is a mixture of fibrous and equiaxial. The intermediate is then heated at a sufficient temperature for a sufficient time in a non-oxidizing atmosphere to produce the controlled crystal morphology silicon nitride.
    • 公开了一种用于生产氮化硅的方法,其中晶体形态被控制。 该方法包括在足够的温度下将基本上由氯硅烷和氨组成的混合物加热足够的时间以产生含硝基的硅烷作为中间体。 将中间体的体积密度控制为小于约0.1g / cc,导致氮化硅具有基本上全部是纤维状的晶体形态,或者堆积密度可以控制为大于约0.3g / cc,导致 具有晶体形态的氮化硅基本上都是等轴的,或体积密度可以控制在约0.1g / cc和约0.3g / cc之间,以产生具有晶体形态的氮化硅,其是纤维和 等轴线 然后将中间体在足够的温度下在非氧化气氛中加热足够的时间以产生受控的晶体形态氮化硅。