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1. 发明申请

WO2007109117A3 DRY ETCH STOP PROCESS FOR ELIMINATING ELECTRICAL SHORTING IN MRAM DEVICE STRUCTURES 审中-公开
公开(公告)号：WO2007109117A3
公开(公告)日：2007-09-27
申请号：PCT/US2007/006607
申请日：2007-03-16
申请人： TEGAL CORPORATION , DITIZIO, Robert
发明人： DITIZIO, Robert
IPC分类号： H01L21/00
摘要： The present invention relates generally to semiconductor fabrication and particularly to fabricating magnetic tunnel junction devices. In particular, this invention relates to a method for using the dielectric layer in tunnel junctions as an etch stop layer to eliminate electrical shorting that can result from the patterning process.

2. 发明申请

WO2011104550A3 METHOD OF FORMING AND PATTERNING CONFORMAL INSULATION LAYER IN VIAS AND ETCHED STRUCTURES 审中-公开
标题翻译：在VIAS和蚀刻结构中形成和形成一致的绝缘层的方法
公开(公告)号：WO2011104550A3
公开(公告)日：2012-04-12
申请号：PCT/GB2011050361
申请日：2011-02-24
申请人： SPP PROCESS TECHNOLOGY SYSTEMS UK LTD , DITIZIO ROBERT
发明人： DITIZIO ROBERT
IPC分类号： H01L21/768 , B81B1/00 , H01L21/02 , H01L21/3065
CPC分类号： H01L21/76898 , B81B2207/07 , B81C1/00087 , B81C2201/0112 , H01L21/02118 , H01L21/02271 , H01L21/02304 , H01L21/3065 , H01L21/30655
摘要： Vias are formed in a substrate using an etch process that forms an undercut profile below the mask layer. The vias are coated with a conformal insulating layer and an etch process is applied to the structures to remove the insulating layer from horizontal surfaces while leaving the insulating layers on the vertical sidewalls of the vias. The top regions of the vias are protected during the etchback process by the undercut hardmask.
摘要翻译：使用在掩模层下方形成底切轮廓的蚀刻工艺在衬底中形成通孔。通孔用保形绝缘层涂覆，并且将蚀刻工艺施加到结构以从绝缘层移除绝缘层，同时将绝缘层留在通孔的垂直侧壁上。通过底切硬掩模在回蚀过程中保护通孔的顶部区域。

3. 发明申请

WO2006029374A2 SYSTEM AND METHOD FOR PROCESSING A WAFER INCLUDING STOP-ON-ALUMINUM PROCESSING 审中-公开
标题翻译：用于处理包括停止铝加工的波形的系统和方法
公开(公告)号：WO2006029374A2
公开(公告)日：2006-03-16
申请号：PCT/US2005/032303
申请日：2005-09-09
申请人： TEGAL CORPORATION , DITIZIO, Robert, A.
发明人： DITIZIO, Robert, A.
IPC分类号： H01L21/00
CPC分类号： H01L43/08 , H01L43/12
摘要： Magnetic tunnel junction (MTJ) devices can be fabricated by a stop-on-alumina process whereby the tunnel junction layer serves as the stop layer during plasma overetching of the upper magnetic layer. The resulting side walls of the MTJ device are non-vertical in the vicinity of the tunnel junction layer which serves to electrically isolate the upper magnetic layer from the lower magnetic layer. The gas employed during plasma overetching excludes halogen containing species which results in highly selective etching of the magnetic layer vis-à-vis the alumina tunnel barrier layer. The introduction of oxygen in the gas may enhance the reproducibility of the overetch process. Finally, plasma treatment with He and H 2 followed by rinsing and baking subsequent to removal of the photoresist mask during the fabrication process enhances yield.
摘要翻译：磁隧道结（MTJ）器件可以通过氧化铝中间体工艺制造，由此隧道结层在上磁层的等离子体过蚀刻期间用作停止层。 MTJ器件的所得侧壁在隧道结层附近是非垂直的，其用于将上磁层与下磁性层电隔离。在等离子体过蚀刻期间使用的气体不包括含卤素的物质，这导致磁性层相对于氧化铝隧道阻挡层的高选择性蚀刻。在气体中引入氧可以提高过氧化过程的再现性。最后用He和H等离子体处理

4. 发明申请

WO2011104550A2 METHOD OF FORMING AND PATTERNING CONFORMAL INSULATION LAYER IN VIAS AND ETCHED STRUCTURES 审中-公开
标题翻译：在VIAS和蚀刻结构中形成和形成一致的绝缘层的方法
公开(公告)号：WO2011104550A2
公开(公告)日：2011-09-01
申请号：PCT/GB2011/050361
申请日：2011-02-24
申请人： SPP PROCESS TECHNOLOGY SYSTEMS UK LIMITED , DITIZIO, Robert
发明人： DITIZIO, Robert
IPC分类号： H01L21/768 , B81B1/00
CPC分类号： H01L21/76898 , B81B2207/07 , B81C1/00087 , B81C2201/0112 , H01L21/02118 , H01L21/02271 , H01L21/02304 , H01L21/3065 , H01L21/30655
摘要： Vias are formed in a substrate using an etch process that forms an undercut profile below the mask layer. The vias are coated with a conformal insulating layer and an etch process is applied to the structures to remove the insulating layer from horizontal surfaces while leaving the insulating layers on the vertical sidewalls of the vias. The top regions of the vias are protected during the etchback process by the undercut hardmask.
摘要翻译：使用在掩模层下方形成底切轮廓的蚀刻工艺在衬底中形成通孔。通孔用保形绝缘层涂覆，并且将蚀刻工艺施加到结构以从绝缘层移除绝缘层，同时将绝缘层留在通孔的垂直侧壁上。通过底切硬掩模在回蚀过程中保护通孔的顶部区域。

5. 发明申请

WO2007109117A2 DRY ETCH STOP PROCESS FOR ELIMINATING ELECTRICAL SHORTING IN MRAM DEVICE STRUCTURES 审中-公开
标题翻译：用于消除MRAM器件结构中的电气短路的干蚀刻停止工艺
公开(公告)号：WO2007109117A2
公开(公告)日：2007-09-27
申请号：PCT/US2007006607
申请日：2007-03-16
申请人： TEGAL CORP , DITIZIO ROBERT
发明人： DITIZIO ROBERT
IPC分类号： H01L21/00
CPC分类号： H01L43/12
摘要： The present invention relates generally to semiconductor fabrication and particularly to fabricating magnetic tunnel junction devices. In particular, this invention relates to a method for using the dielectric layer in tunnel junctions as an etch stop layer to eliminate electrical shorting that can result from the patterning process.
摘要翻译：本发明一般涉及半导体制造，特别涉及制造磁性隧道结器件。特别地，本发明涉及一种在隧道结中使用电介质层作为蚀刻停止层的方法，以消除由图案化过程产生的电短路。

6. 发明申请

WO2006029374A3 SYSTEM AND METHOD FOR PROCESSING A WAFER INCLUDING STOP-ON-ALUMINUM PROCESSING 审中-公开
标题翻译：用于处理包括停止铝加工的波形的系统和方法
公开(公告)号：WO2006029374A3
公开(公告)日：2006-11-09
申请号：PCT/US2005032303
申请日：2005-09-09
申请人： TEGAL CORP , DITIZIO ROBERT A
发明人： DITIZIO ROBERT A
IPC分类号： H01L21/00 , H01L21/8242 , H01L29/12 , H01L29/76 , H01L29/82
CPC分类号： H01L43/08 , H01L43/12
摘要： Magnetic tunnel junction (MTJ) devices can be fabricated by a stop-on-alumina process whereby the tunnel junction layer serves as the stop layer during plasma overetching of the upper magnetic layer. The resulting side walls of the MTJ device are non-vertical in the vicinity of the tunnel junction layer which serves to electrically isolate the upper magnetic layer from the lower magnetic layer. The gas employed during plasma overetching excludes halogen containing species which results in highly selective etching of the magnetic layer vis-à-vis the alumina tunnel barrier layer. The introduction of oxygen in the gas may enhance the reproducibility of the overetch process. Finally, plasma treatment with He and H 2 followed by rinsing and baking subsequent to removal of the photoresist mask during the fabrication process enhances yield.
摘要翻译：磁隧道结（MTJ）器件可以通过氧化铝中间体工艺制造，由此隧道结层在上磁层的等离子体过蚀刻期间用作停止层。 MTJ器件的所得侧壁在隧道结层附近是非垂直的，其用于将上磁层与下磁性层电隔离。在等离子体过蚀刻期间使用的气体不包括含卤素的物质，这导致磁性层相对于氧化铝隧道阻挡层的高选择性蚀刻。在气体中引入氧可以提高过氧化过程的再现性。最后，在制造过程中除去光致抗蚀剂掩模之后，用He和H 2 O等离子体处理随后进行漂洗和烘烤，提高了产率。

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