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1. 发明申请

WO2012044622A3 LOW-TEMPERATURE DIELECTRIC FILM FORMATION BY CHEMICAL VAPOR DEPOSITION 审中-公开
标题翻译：通过化学蒸气沉积形成的低温电介质膜
公开(公告)号：WO2012044622A3
公开(公告)日：2013-10-31
申请号：PCT/US2011053503
申请日：2011-09-27
申请人： TOKYO ELECTRON LTD , DIP ANTHONY , REID KIMBERLY G
发明人： DIP ANTHONY , REID KIMBERLY G
IPC分类号： H01L21/31
CPC分类号： H01L21/0214 , H01L21/02164 , H01L21/02271 , H01L21/28185 , H01L21/28202 , H01L21/28211 , H01L21/28273 , H01L21/3105
摘要： A method for depositing a dielectric film on a substrate includes positioning a plurality of substrates in a process chamber, heating the process chamber to a deposition temperature between 400°C and less than 650°C, flowing a first process gas comprising water vapor into the process chamber, flowing a second process gas comprising dichlorosilane (DCS) into the process chamber, establishing a gas pressure of less than 2 Torr, and reacting the first and second process gases to thermally deposit a silicon oxide film on the plurality of substrates. One embodiment further includes flowing a third process gas comprising nitric oxide (NO) gas into the process chamber while flowing the first process gas and the second process gas; and reacting the oxide film with the third process gas to form a silicon oxynitride film on the substrate.
摘要翻译：用于在基板上沉积介电膜的方法包括将多个基板定位在处理室中，将处理室加热至400℃至小于650℃的沉积温度，使包含水蒸气的第一工艺气体流入处理室，使包含二氯硅烷（DCS）的第二工艺气体流入处理室，建立小于2Torr的气体压力，并使第一和第二工艺气体反应以在多个衬底上热沉积氧化硅膜。一个实施例还包括在流过第一处理气体和第二处理气体的同时使包含一氧化氮（NO）气体的第三处理气体流入处理室; 并使氧化膜与第三工艺气体反应，以在衬底上形成氮氧化硅膜。

2. 发明申请

WO2007021421A3 LOW TEMPERATURE FORMATION OF PATTERNED EPITAXIAL SI CONTAINING FILMS 审中-公开
标题翻译：低温形成含图案的外延片
公开(公告)号：WO2007021421A3
公开(公告)日：2009-04-23
申请号：PCT/US2006027643
申请日：2006-07-17
申请人： TOKYO ELECTRON LTD , DIP ANTHONY , LEITH ALLEN JOHN , OH SEUNGHO
发明人： DIP ANTHONY , LEITH ALLEN JOHN , OH SEUNGHO
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/02636 , H01L21/32135
摘要： A method for selectively forming an epitaxial Si containing film on a semiconductor structure at low temperature. The method includes providing the structure in a process chamber, the structure containing a Si substrate having an epitaxial Si surface area and a patterned film area thereon. A Si film is non-selectively deposited onto the structure, the Si film comprising an epitaxial Si film deposited onto the epitaxial Si surface and a non-epitaxial Si film deposited onto an exposed surface of the patterned film. The non- epitaxial Si film is selectively dry etched away to form a patterned epitaxial Si film. The Si film may be a SiGe film.
摘要翻译：一种在低温下在半导体结构上有选择地形成外延含Si膜的方法。该方法包括在处理室中提供结构，该结构包含具有外延Si表面积的Si衬底和其上的图案化膜区域。将Si膜非选择性地沉积到该结构上，该Si膜包含沉积在外延Si表面上的外延Si膜和沉积在图案化膜的暴露表面上的非外延Si膜。非外延Si膜被选择性地干蚀刻掉以形成图案化的外延Si膜。 Si膜可以是SiGe膜。

3. 发明申请

WO2008100846A2 ATOMIC LAYER DEPOSITION SYSTEMS AND METHODS 审中-公开
标题翻译：原子层沉积系统和方法
公开(公告)号：WO2008100846A2
公开(公告)日：2008-08-21
申请号：PCT/US2008/053561
申请日：2008-02-11
申请人： TOKYO ELECTRON LIMITED , TOKYO ELECTRON AMERICA, INC. , DIP, Anthony
发明人： DIP, Anthony
IPC分类号： C23C16/455
CPC分类号： C23C16/45551 , C23C16/45508 , C23C16/45519 , C23C16/45536 , C23C16/4584 , C23C16/54 , H01L21/68764 , H01L21/68771
摘要： Systems and methods for depositing thin films using Atomic Layer Deposition (ALD). The deposition system (10) includes a process chamber (16) with a peripheral sidewall (36), partitions (68, 70, 72, 74) that divide a processing space (38) inside the process chamber (16) into at least two compartments (76, 78), and a platter (50) that supports substrates (15) within the processing space (38). The platter (50) rotates the substrates (15) relative to the stationary peripheral sidewail (36) and compartments (76, 78). One compartment (76) receives a process material used to deposit a layer on each of the substrates (15) and the other compartment (78) contains an inert gas. A material injector (100, 100a, 100b), which injects the process materia!, communicates with the compartment (76) through the peripheral sidewall (36).
摘要翻译：使用原子层沉积（ALD）沉积薄膜的系统和方法
沉积系统（10）包括具有周边侧壁（36）的处理室（16），将处理室（16）内部的处理空间（38）分隔成至少两个隔室（76,78）以及支撑处理空间（38）内的基板（15）的浅盘（50）。盘片50使基板15相对于静止的周边侧壁36和隔室76,78旋转。一个隔室（76）接收用于在每个衬底（15）上沉积层的处理材料，而另一个隔室（78）包含惰性气体。注入处理材料的材料注射器（100,100a，100b）通过周边侧壁（36）与隔室（76）连通。

4. 发明申请

WO2006078354A3 MICRO-FEATURE FILL PROCESS AND APPARATUS USING HEXACHLORODISILANE OR OTHER CHLORINE-CONTAINING SILICON PRECURSOR 审中-公开
标题翻译：使用六氯二硅烷或其他含氯硅前驱体的微特征填充方法和装置
公开(公告)号：WO2006078354A3
公开(公告)日：2006-12-07
申请号：PCT/US2005043027
申请日：2005-11-30
申请人： TOKYO ELECTRON LTD , LEITH ALLEN , DIP ANTHONY , OH SEUNGHO
发明人： LEITH ALLEN , DIP ANTHONY , OH SEUNGHO
IPC分类号： H01L21/336
CPC分类号： H01L21/32055 , C23C16/045 , C23C16/24 , H01L21/76877
摘要： A method is provided for depositing a silicon-containing film in a micro-feature on a substrate by a low pressure deposition process in a processing system. A silicon-containing film can be formed in a micro-feature by providing a substrate in a process chamber of a processing system, and exposing a hexachiorodisilane (HCD) process gas to the substrate. A processing tool containing a processing system for forming a silicon-containing film in a micro-feature using a silicon and chlorine-containing gas such as a HCD process gas is provided. Alternatively, the micro-feature can be exposed to DCS, SiCl 4 , and SiHCI 3 gases. Alternatively, the micro-feature can be exposed to (SiH 4 +HCI).
摘要翻译：提供了一种用于在处理系统中通过低压沉积工艺在衬底上的微特征中沉积含硅膜的方法。通过在处理系统的处理室中提供衬底并且将六氯乙硅烷（HCD）处理气体暴露于衬底，可以以微特征形成含硅膜。提供了一种处理工具，其包含用于使用诸如HCD处理气体的硅和含氯气体在微特征中形成含硅膜的处理系统。或者，微特征可能暴露于DCS，SiCl _{4 和SiHCI _{3 气体。或者，微特征可以暴露于（SiH _{4 / SUB> + HCl）。}}}

5. 发明申请

WO2006078354A2 MICRO-FEATURE FILL PROCESS AND APPARATUS USING HEXACHLORODISILANE OR OTHER CHLORINE-CONTAINING SILICON PRECURSOR 审中-公开
标题翻译：微量填充工艺和使用HEXACHLORODISILANE或其他含氯硅酸盐前体的设备
公开(公告)号：WO2006078354A2
公开(公告)日：2006-07-27
申请号：PCT/US2005/043027
申请日：2005-11-30
申请人： TOKYO ELECTRON LIMITED , LEITH, Allen , DIP, Anthony , OH, Seungho
发明人： LEITH, Allen , DIP, Anthony , OH, Seungho
IPC分类号： H01L21/8234
CPC分类号： H01L21/32055 , C23C16/045 , C23C16/24 , H01L21/76877
摘要： A method is provided for depositing a silicon-containing film in a micro-feature on a substrate by a low pressure deposition process in a processing system. A silicon-containing film can be formed in a micro-feature by providing a substrate in a process chamber of a processing system, and exposing a hexachiorodisilane (HCD) process gas to the substrate. A processing tool containing a processing system for forming a silicon-containing film in a micro-feature using a silicon and chlorine-containing gas such as a HCD process gas is provided. Alternatively, the micro-feature can be exposed to DCS, SiCl 4 , and SiHCI 3 gases. Alternatively, the micro-feature can be exposed to (SiH 4 +HCI).
摘要翻译：提供了一种用于在处理系统中通过低压沉积工艺在衬底上的微特征中沉积含硅膜的方法。通过在处理系统的处理室中提供衬底，并将六氯二硅烷（HCD）工艺气体暴露于衬底，可以在微特征中形成含硅膜。提供了一种包含用于使用诸如HCD处理气体的含硅气体和含氯气体在微特征中形成含硅膜的处理系统的处理工具。或者，微特征可以暴露于DCS，SiCl 4 Si和SiHCl 3气体。或者，微特征可以暴露于（SiH 4+ + HCl）。

6. 发明申请

WO2005027189A2 FORMATION OF A METAL-CONTAINING FILM BY SEQUENTIAL GAS EXPOSURE IN A BATCH TYPE PROCESSING SYSTEM 审中-公开
标题翻译：在批次式加工系统中通过连续气体暴露形成含金属膜
公开(公告)号：WO2005027189A2
公开(公告)日：2005-03-24
申请号：PCT/US2004/025606
申请日：2004-09-02
申请人： TOKYO ELECTRON LIMITED , DIP, Anthony , TOELLER, Michael , REID, Kimberly, G.
发明人： DIP, Anthony , TOELLER, Michael , REID, Kimberly, G.
IPC分类号： H01L
CPC分类号： C23C16/45531 , C23C16/308 , C23C16/401 , C23C16/405 , C23C16/45546
摘要： A method is provided for forming a metal-containing film on a substrate by a sequential gas exposure process in a batch type processing system. A metal-containing film can be formed on a substrate by providing a substrate in a process chamber of a batch type processing system, heating the substrate, sequentially flowing a pulse of a metal-containing precursor gas and a pulse of a reactant gas in the process chamber, and repeating the flowing processes until a metal-containing film with desired film properties is formed on the substrate. The method can form a metal-oxide film, for example Hf0 2 and Zr0 2 , a metal-oxynitride film, for example Hf x O Z N w and Hf x O Z N w , a metal-silicate film, for example Hf x Si y O Z and Zr x Si y O Z , and a nitrogen-containing metal-silicate film, for example Hf x Si y O Z N w and Zr x Si y O Z N,. A processing tool containing a batch type processing system for forming a metal-containing film by a sequential gas exposure process is provided.
摘要翻译：提供了一种通过在间歇式处理系统中通过连续气体曝光工艺在基板上形成含金属膜的方法。通过在间歇式处理系统的处理室中设置基板，在衬底上形成含金属膜，加热衬底，顺序地将含金属的前体气体的脉冲和反应气体的脉冲流入并且重复流动过程，直到在基底上形成具有所需膜特性的含金属膜。该方法可以形成金属氧化物膜，例如HfO 2和ZrO 2，金属氧氮化物膜，例如Hf x O z N w和Hf x O z N w，金属硅酸盐膜，例如Hf x Se y O z和Zr x S y O y O，以及含氮金属硅酸盐膜，例如HfxSiyOZNw和ZrxSiyOZN。提供了一种包含用于通过连续气体曝光工艺形成含金属膜的间歇式处理系统的加工工具。

7. 发明申请

WO2007134035A3 METHOD FOR FORMATION OF OXIDIZED ALUMINUM NITRIDE FILMS 审中-公开
标题翻译：氧化氮化铝膜的形成方法
公开(公告)号：WO2007134035A3
公开(公告)日：2008-02-21
申请号：PCT/US2007068447
申请日：2007-05-08
申请人： TOKYO ELECTRON LTD , TOKYO ELECTRON AMERICA INC , DIP ANTHONY , REID KIMBERLY G
发明人： DIP ANTHONY , REID KIMBERLY G
IPC分类号： C23C16/30 , C23C16/56
CPC分类号： C23C16/303 , C23C16/56
摘要： A method is provided for in-situ formation of a thin oxidized AlN film on a substrate. The method includes providing the substrate in a process chamber (10), depositing an AfN film on the substrate (40), and post-treating the AIN film with exposure to a nitrogen and oxygen-containing gas. The post-treating increases the dielectric constant of the AIN film with substantially no increase in the AIN film thickness. The method can also include pre-treating the substrate (40) prior to AIN deposition, post-anneaiing the AIN film before or after the post-treatment, or both.
摘要翻译：提供了一种在衬底上原位形成薄的氧化AlN膜的方法。该方法包括在处理室（10）中提供衬底，在衬底（40）上沉积AfN膜，以及暴露于含氮和含氧气体对AlN膜进行后处理。后处理增加了AIN膜的介电常数，而基本上没有增加AIN膜厚度。该方法还可以包括在AIN沉积之前预处理衬底（40），在后处理之前或之后对AlN膜进行后处理，或两者。

8. 发明申请

WO2007030194A1 BUILT-IN SELF TEST FOR A THERMAL PROCESSING SYSTEM 审中-公开
标题翻译：用于热处理系统的内置自检
公开(公告)号：WO2007030194A1
公开(公告)日：2007-03-15
申请号：PCT/US2006/026220
申请日：2006-07-06
申请人： TOKYO ELECTRON LIMITED , TOKYO ELECTRON AMERICA, INC. , KAUSHAL, Sanjeev , PANDEY, Pradeep , SUGISHIMA, Kenji , DIP, Anthony , SMITH, David , JOE, Raymond , GANDHI, Sundar
发明人： KAUSHAL, Sanjeev , PANDEY, Pradeep , SUGISHIMA, Kenji , DIP, Anthony , SMITH, David , JOE, Raymond , GANDHI, Sundar
CPC分类号： H01L22/10 , G05B23/0254 , H01L21/67248
摘要： A method of monitoring a thermal processing system (100, 200) in real-time using a built-in self test (BIST) table that includes positioning a plurality of wafers (W) in a processing chamber (202) in the thermal processing system (100, 200); executing a real-time dynamic model (330) to generate a predicted dynamic process response for the processing chamber (202) during the processing time; creating a first measured dynamic process response; determining a dynamic estimation error using a difference between the predicted dynamic process response and the measured dynamic process response; and comparing the dynamic estimation error to operational thresholds established by one or more rules in the BiST table.
摘要翻译：一种使用内置自检（BIST）表实时监测热处理系统（100,200）的方法，其包括将多个晶片（W）定位在热处理系统中的处理室（202）中（100,200）; 执行实时动态模型（330）以在处理时间期间生成用于处理室（202）的预测动态过程响应; 创建第一个测量动态过程响应; 使用预测的动态过程响应和测量的动态过程响应之间的差来确定动态估计误差; 并将动态估计误差与由BiST表中的一个或多个规则建立的操作阈值进行比较。

9. 发明申请

WO2005036593A2 DEPOSITION OF SILICON-CONTAINING FILMS FROM HEXACHLORODISILANE 审中-公开
标题翻译：来自HEXACHLORODISILANE的含硅膜的沉积
公开(公告)号：WO2005036593A2
公开(公告)日：2005-04-21
申请号：PCT/US2004026744
申请日：2004-09-20
申请人： TOKYO ELECTRON LTD , DIP ANTHONY , OH SEUNGHO , LEITH ALLEN JOHN
发明人： DIP ANTHONY , OH SEUNGHO , LEITH ALLEN JOHN
IPC分类号： C23C16/24 , C30B25/02 , C30B29/06 , H01L21/20 , H01L21/205 , H01L
CPC分类号： C30B25/02 , C23C16/24 , C30B29/06 , H01L21/02381 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02639
摘要： A method is provided for depositing a silicon-containing film and a substrate by a low pressure deposition process in a processing system. A silicon-containing film can be formed on a substrate by providing a substrate in a process chamber of a processing system, heating the substrate, and exposing a hexachlorodisilane (HCD) process gas to the substrate. The method can selectively deposit an epitaxial silicon-containing film on a silicon surface of a substrate or, alternately, non-selectively deposit a silicon-containing film on a substrate. A processing tool containing a processing system for forming a silicon-containing film on s substrate using a HCD process gas is provided.
摘要翻译：提供了一种用于在处理系统中通过低压沉积工艺沉积含硅膜和基底的方法。通过在处理系统的处理室中提供衬底，加热衬底并将六氯二硅烷（HCD）工艺气体暴露于衬底，可以在衬底上形成含硅膜。该方法可以在衬底的硅表面上选择性地沉积外延含硅膜，或者在衬底上非选择性地沉积含硅膜。提供了一种包含用于使用HCD工艺气体在衬底上形成含硅膜的处理系统的加工工具。

10. 发明申请

WO2012044622A2 LOW-TEMPERATURE DIELECTRIC FILM FORMATION BY CHEMICAL VAPOR DEPOSITION 审中-公开
标题翻译：通过化学蒸气沉积形成的低温电介质膜
公开(公告)号：WO2012044622A2
公开(公告)日：2012-04-05
申请号：PCT/US2011/053503
申请日：2011-09-27
申请人： TOKYO ELECTRON LIMITED , DIP, Anthony , REID, Kimberly, G.
发明人： DIP, Anthony , REID, Kimberly, G.
IPC分类号： H01L21/26
CPC分类号： H01L21/0214 , H01L21/02164 , H01L21/02271 , H01L21/28185 , H01L21/28202 , H01L21/28211 , H01L21/28273 , H01L21/3105
摘要： A method for depositing a dielectric film on a substrate includes positioning a plurality of substrates in a process chamber, heating the process chamber to a deposition temperature between 400°C and less than 650°C, flowing a first process gas comprising water vapor into the process chamber, flowing a second process gas comprising dichlorosilane (DCS) into the process chamber, establishing a gas pressure of less than 2 Torr, and reacting the first and second process gases to thermally deposit a silicon oxide film on the plurality of substrates. One embodiment further includes flowing a third process gas comprising nitric oxide (NO) gas into the process chamber while flowing the first process gas and the second process gas; and reacting the oxide film with the third process gas to form a silicon oxynitride film on the substrate.
摘要翻译：用于在基板上沉积介电膜的方法包括将多个基板定位在处理室中，将处理室加热至400℃至小于650℃的沉积温度，使包含水蒸气的第一工艺气体流入处理室，使包含二氯硅烷（DCS）的第二工艺气体流入处理室，建立小于2Torr的气体压力，并使第一和第二工艺气体反应以在多个衬底上热沉积氧化硅膜。一个实施例还包括在流过第一处理气体和第二处理气体的同时使包含一氧化氮（NO）气体的第三处理气体流入处理室; 并使氧化膜与第三工艺气体反应，以在衬底上形成氮氧化硅膜。

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