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1. 发明申请

WO2005004189A3 SIDEWALL MAGNET IMPROVING UNIFORMITY OF INDUCTIVELY COUPLED PLASMA AND SHIELDS USED THEREWITH 审中-公开
标题翻译：电动磁铁改善电感耦合等离子体和平板电脑的均匀性
公开(公告)号：WO2005004189A3
公开(公告)日：2006-01-19
申请号：PCT/US2004020186
申请日：2004-06-22
申请人： APPLIED MATERIALS INC , GUNG TZA-JING , TANG XIANMIN , FORSTER JOHN , DING PEIJUN , SCHWEITZER MARC , MILLER KEITH A , LAVITSKY ILYA
发明人： GUNG TZA-JING , TANG XIANMIN , FORSTER JOHN , DING PEIJUN , SCHWEITZER MARC , MILLER KEITH A , LAVITSKY ILYA
IPC分类号： H05H1/46 , C23C14/04 , C23C14/34 , C23C14/35 , H01J37/32 , H01J37/34 , H01L21/285 , H01L21/768
CPC分类号： H01J37/3402 , C23C14/046 , C23C14/345 , C23C14/3457 , C23C14/358 , H01J37/321 , H01J37/32623 , H01J37/3408 , H01J37/3411 , H01J37/3441 , H01J2237/3327 , H01L21/2855 , H01L21/76843 , H01L21/76877
摘要： One aspect of the invention includes an auxiliary magnet ring positioned outside of the chamber wall of a plasma sputter reactor and being disposed at least partially radially outwardly of an RF coil used to inductively generate a plasma, particularly for sputter etching the substrate being sputter deposited. Thereby, a magnetic barrier prevents the plasma from leaking outwardly to the coil and improves the uniformity of sputter etching. The magnetic field also acts as a magnetron when the coil, when made aspect of the same material as the primary target, is being used as a secondary target. Another aspect of the invention includes a one-piece inner shield extending from the target to the pedestal with a smooth inner surface and supported by an annular flange in a middle portion of the shield. The shield may be used to support the RF coil.
摘要翻译：本发明的一个方面包括位于等离子体溅射反应器的室壁外部的辅助磁环，并且至少部分地设置在用于感应地产生等离子体的RF线圈的径向外侧，特别是用于溅射蚀刻被溅射沉积的衬底。因此，磁屏障防止等离子体向外泄漏到线圈并提高溅射蚀刻的均匀性。当线圈当与主要目标相同的材料制成的方面被用作次要靶时，磁场也用作磁控管。本发明的另一方面包括从目标件延伸到具有光滑的内表面并由屏蔽件的中间部分中的环形凸缘支撑的一体式内屏蔽件。屏蔽可用于支持RF线圈。

2. 发明申请

WO2011035046A3 STACKABLE MULTI-PORT GAS NOZZLES 审中-公开
公开(公告)号：WO2011035046A3
公开(公告)日：2011-03-24
申请号：PCT/US2010/049150
申请日：2010-09-16
申请人： SIERRA SOLAR POWER, INC. , POPPE, Steve , ROZENZON, Yan , DING, Peijun
发明人： POPPE, Steve , ROZENZON, Yan , DING, Peijun
IPC分类号： H01L31/18 , H01L21/205
摘要： One embodiment provides a reactor for material deposition. The reactor includes a chamber and at least one gas nozzle. The chamber includes a pair of susceptors, each having a front side and a back side. The front side mounts a number of substrates. The susceptors are positioned vertically so that the front sides of the susceptors face each other, and the vertical edges of the susceptors are in contact with each other, thereby forming a substantially enclosed narrow channel between the substrates mounted on different susceptors. The gas nozzle includes a gas-inlet component situated in the center and a detachable gas-outlet component stacked around the gas-inlet component. The gas-inlet component includes at least one opening coupled to the chamber, and is configured to inject precursor gases into the chamber. The detachable gas-outlet component includes at least one opening coupled to the chamber, and is configured to output exhaust gases from the chamber.

3. 发明申请

WO2010042454A1 EPITAXIAL REACTOR FOR SILICON DEPOSITION 审中-公开
标题翻译：用于硅沉积的外延反应器
公开(公告)号：WO2010042454A1
公开(公告)日：2010-04-15
申请号：PCT/US2009/059580
申请日：2009-10-05
申请人： SIERRA SOLAR POWER, INC. , POPPE, Steve , ROZENZON, Yan , CHEN, David Z. , YAN, Xiaole , DING, Peijun , XU, Zheng
发明人： POPPE, Steve , ROZENZON, Yan , CHEN, David Z. , YAN, Xiaole , DING, Peijun , XU, Zheng
IPC分类号： C23C16/455 , C23C16/458 , C23C16/48 , C23C16/44 , C30B25/10 , C30B25/12 , C30B25/14 , C30B25/16
CPC分类号： C23C16/4408 , C23C16/455 , C23C16/4587 , C23C16/481 , C30B25/105 , C30B25/12 , C30B25/14 , C30B25/165
摘要： One embodiment provides an apparatus for material deposition. The apparatus includes a reaction chamber, and a pair of susceptors. Each susceptor has a front side mounting substrates and a back side. The front sides of the vertically positioned susceptors face each other, and the vertical edges of the susceptors are in contact with each other. The apparatus also includes a number of gas nozzles for injecting reaction gases. The gas flow directions inside the chamber can be alternated by controlling the gas nozzles. The gas nozzles are configured to inject a small amount of purge gas including at least one of: HCl, SiCl 4 , and H 2 when the gas nozzles are not injecting reaction gas. The apparatus includes a number of heating units situated outside the reaction chamber. The heating units are arranged in such a way that they radiate heat energy directly to the back sides of the susceptors.
摘要翻译：一个实施例提供了用于材料沉积的装置。该装置包括反应室和一对基座。每个感受体具有正面安装基板和背面。垂直定位的基座的前侧彼此面对，并且基座的垂直边缘彼此接触。该装置还包括多个用于注入反应气体的气体喷嘴。可以通过控制气体喷嘴来改变室内的气体流动方向。当气体喷嘴不注入反应气体时，气体喷嘴被配置为喷射包括以下中的至少一种的少量吹扫气体：HCl，SiCl 4和H 2。该装置包括位于反应室外部的多个加热单元。加热单元以这样的方式布置，使得它们将热能直接辐射到基座的背面。

4. 发明申请

WO2010033304A2 SOLAR CELLS FABRICATED BY USING CVD EPITAXIAL SI FILMS ON METALLURGICAL-GRADE SI WAFERS 审中-公开
标题翻译：用CVD外延SI薄膜在冶金级硅片上制备太阳能电池
公开(公告)号：WO2010033304A2
公开(公告)日：2010-03-25
申请号：PCT/US2009/052195
申请日：2009-07-30
申请人： SIERRA SOLAR POWER, INC. , FU, Jianming , XU, Zheng , DING, Peijun , YU, Chentao , SONG, Guanghua , LIANG, Jianjun
发明人： FU, Jianming , XU, Zheng , DING, Peijun , YU, Chentao , SONG, Guanghua , LIANG, Jianjun
IPC分类号： H01L31/18 , H01L31/028 , H01L31/0288 , H01L31/068 , C23C16/00 , C30B15/00 , C30B25/00 , C30B29/06 , C01B33/037
CPC分类号： H01L31/1804 , H01L21/3221 , H01L31/068 , Y02E10/547 , Y02P70/521
摘要： One embodiment of the present invention provides a method for fabricating a solar cell. The method includes: melting a metallurgical-grade (MG) Si feedstock, lowering a single-crystalline Si seed to touch the surface of the molten MG-Si, slowly pulling out a single-crystal Si ingot of the molten MG-Si, processing the Si ingot into single crystal Si wafers to form MG-Si substrates for subsequent epitaxial growth, leaching out residual metal impurities in the MG-Si substrate, epitaxially growing a layer of single-crystal Si thin film doped with boron on the MG-Si substrate, doping phosphor to the single-crystal Si thin film to form an emitter layer, depositing an anti-reflection layer on top of the single-crystal Si thin film, and forming the front and the back electrical contacts.
摘要翻译：本发明的一个实施例提供了一种用于制造太阳能电池的方法。该方法包括：熔化冶金级（MG）Si原料，降低单晶Si籽晶以接触熔融MG-Si的表面，缓慢拉出熔融MG-Si的单晶Si锭，加工硅锭转变为单晶硅晶片以形成用于后续外延生长的MG-Si衬底，浸出MG-Si衬底中的残余金属杂质，在MG-Si上外延生长掺杂有硼的单晶Si薄膜层衬底，将磷光体掺杂到单晶Si薄膜以形成发射极层，在单晶Si薄膜的顶部沉积抗反射层，并形成前和后电触点。

5. 发明申请

WO2011035046A2 STACKABLE MULTI-PORT GAS NOZZLES 审中-公开
标题翻译：可堆叠多口气体喷嘴
公开(公告)号：WO2011035046A2
公开(公告)日：2011-03-24
申请号：PCT/US2010049150
申请日：2010-09-16
申请人： SIERRA SOLAR POWER INC , POPPE STEVE , ROZENZON YAN , DING PEIJUN
发明人： POPPE STEVE , ROZENZON YAN , DING PEIJUN
IPC分类号： H01L31/18 , H01L21/205
CPC分类号： C23C16/45576 , C23C16/4412 , C23C16/45521 , C23C16/4587
摘要： One embodiment provides a reactor for material deposition. The reactor includes a chamber and at least one gas nozzle. The chamber includes a pair of susceptors, each having a front side and a back side. The front side mounts a number of substrates. The susceptors are positioned vertically so that the front sides of the susceptors face each other, and the vertical edges of the susceptors are in contact with each other, thereby forming a substantially enclosed narrow channel between the substrates mounted on different susceptors. The gas nozzle includes a gas-inlet component situated in the center and a detachable gas-outlet component stacked around the gas-inlet component. The gas-inlet component includes at least one opening coupled to the chamber, and is configured to inject precursor gases into the chamber. The detachable gas-outlet component includes at least one opening coupled to the chamber, and is configured to output exhaust gases from the chamber.
摘要翻译：一个实施例提供用于材料沉积的反应器。反应器包括室和至少一个气体喷嘴。该室包括一对基座，每个基座具有前侧和后侧。前面安装了许多基板。感受体垂直定位，使得基座的前侧彼此面对，并且基座的垂直边缘彼此接触，从而在安装在不同基座上的基板之间形成基本封闭的窄通道。气体喷嘴包括位于中心的气体入口部件和堆叠在气体入口部件周围的可拆卸气体出口部件。气体入口部件包括至少一个连接到腔室的开口，并被构造成将前体气体注入到腔室中。可拆卸气体出口部件包括至少一个连接到该腔室的开口，并且构造成输出来自腔室的废气。

6. 发明申请

WO2007053317A3 PROTECTIVE OFFSET SPUTTERING 审中-公开
标题翻译：保护性偏移溅射
公开(公告)号：WO2007053317A3
公开(公告)日：2007-09-27
申请号：PCT/US2006040822
申请日：2006-10-20
申请人： APPLIED MATERIALS INC , YE MENGQI , LIU ZHENDONG , DING PEIJUN
发明人： YE MENGQI , LIU ZHENDONG , DING PEIJUN
IPC分类号： C23C14/35
CPC分类号： H01L21/67011 , C23C14/225 , C23C14/35 , C23C14/505 , H01J37/3408 , H01J37/3423 , H01J37/3455
摘要： Sputtering in a physical vapor deposition (PVD) chamber (100) may, in one embodiment, utilize a target (220) laterally offset from and tilted with respect to the substrate (186). In another aspect, target power may be reduced to enhance film protection. In yet another aspect magnetron magnets may be relatively strong and well balanced to enhance film protection. In another aspect, a shutter may be provided to protect the substrate in start up conditions. Other embodiments are described and claimed.
摘要翻译：在一个实施例中，在物理气相沉积（PVD）室（100）中的溅射可以利用相对于衬底（186）横向偏移并且相对于衬底倾斜的靶（220）。另一方面，可以降低目标功率以增强膜保护。在另一方面，磁控管磁体可以相对较强并且平衡良好以增强膜保护。在另一方面，可以提供快门以在启动条件下保护基板。描述和要求保护其他实施例。

7. 发明申请

WO2007053317A2 PROTECTIVE OFFSET SPUTTERING 审中-公开
标题翻译：保护性偏移溅射
公开(公告)号：WO2007053317A2
公开(公告)日：2007-05-10
申请号：PCT/US2006/040822
申请日：2006-10-20
申请人： APPLIED MATERIALS, INC. , YE, Mengqi , LIU, Zhendong , DING, Peijun
发明人： YE, Mengqi , LIU, Zhendong , DING, Peijun
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/67011 , C23C14/225 , C23C14/35 , C23C14/505 , H01J37/3408 , H01J37/3423 , H01J37/3455
摘要： Sputtering in a physical vapor deposition (PVD) chamber may, in one embodiment, utilize a target laterally offset from and tilted with respect to the substrate. In another aspect, target power may be reduced to enhance film protection. In yet another aspect, magnetron magnets may be relatively strong and well balanced to enhance film protection. In another aspect, a shutter may be provided to protect the substrate in start up conditions. Other embodiments are described and claimed.
摘要翻译：在一个实施例中，在物理气相沉积（PVD）室中的溅射可以利用相对于衬底的横向偏移和倾斜的目标。另一方面，可以减小目标功率以增强膜保护。在另一方面，磁控管磁体可以相对较强并且平衡良好以增强膜保护。在另一方面，可以提供快门以在启动条件下保护基板。描述和要求保护其他实施例。

8. 发明申请

WO2010033304A3 SOLAR CELLS FABRICATED BY USING CVD EPITAXIAL SI FILMS ON METALLURGICAL-GRADE SI WAFERS 审中-公开
标题翻译：通过使用CVD外延膜在冶金级SI WAFERS上制造的太阳能电池
公开(公告)号：WO2010033304A3
公开(公告)日：2010-09-02
申请号：PCT/US2009052195
申请日：2009-07-30
申请人： SIERRA SOLAR POWER INC , FU JIANMING , XU ZHENG , DING PEIJUN , YU CHENTAO , SONG GUANGHUA , LIANG JIANJUN
发明人： FU JIANMING , XU ZHENG , DING PEIJUN , YU CHENTAO , SONG GUANGHUA , LIANG JIANJUN
IPC分类号： H01L31/18 , H01L31/028 , H01L31/068
CPC分类号： H01L31/1804 , H01L21/3221 , H01L31/068 , Y02E10/547 , Y02P70/521
摘要： One embodiment of the present invention provides a method for fabricating a solar cell. The method includes: melting a metallurgical-grade (MG) Si feedstock, lowering a single-crystalline Si seed to touch the surface of the molten MG-Si, slowly pulling out a single-crystal Si ingot of the molten MG-Si, processing the Si ingot into single crystal Si wafers to form MG-Si substrates for subsequent epitaxial growth, leaching out residual metal impurities in the MG-Si substrate, epitaxially growing a layer of single-crystal Si thin film doped with boron on the MG-Si substrate, doping phosphor to the single-crystal Si thin film to form an emitter layer, depositing an anti-reflection layer on top of the single-crystal Si thin film, and forming the front and the back electrical contacts.
摘要翻译：本发明的一个实施例提供一种制造太阳能电池的方法。该方法包括：熔化冶金级（MG）Si原料，降低单晶Si种子以接触熔融的MG-Si的表面，缓慢拉出熔融的MG-Si的单晶Si锭，加工 Si晶锭形成单晶Si晶片以形成用于随后的外延生长的MG-Si衬底，浸出MG-Si衬底中的残余金属杂质，在MG-Si上外延生长掺杂有硼的单晶Si薄膜层衬底，掺杂磷光体到单晶Si薄膜以形成发射极层，在单晶Si薄膜的顶部沉积抗反射层，并形成前后电接触。

9. 发明申请

WO9854377A3 STRESS TUNABLE TANTALUM AND TANTALUM NITRIDE FILMS 审中-公开
标题翻译：应力TANTALUM和氮化钛薄膜
公开(公告)号：WO9854377A3
公开(公告)日：1999-03-11
申请号：PCT/US9810789
申请日：1998-05-27
申请人： APPLIED MATERIALS INC , CHIANG TONY , DING PEIJUN , CHIN BARRY L , SUN BINGXI
发明人： CHIANG TONY , DING PEIJUN , CHIN BARRY L , SUN BINGXI
IPC分类号： C23C14/00 , C23C14/06 , C23C14/14 , C23C14/16 , C23C14/34 , C23C14/35 , C23C14/58 , H01L21/285 , H01L21/768 , H01L23/532
CPC分类号： C23C14/345 , C23C14/0036 , C23C14/0641 , C23C14/16 , C23C14/3492 , C23C14/358 , C23C14/5833 , H01L21/2855 , H01L21/76838 , H01L21/76841 , H01L21/76843 , H01L21/76862 , H01L21/76864 , H01L23/53233 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： We have discovered that the residual stress residing in a tantalum (Ta) film or a tantalum nitride (TaNx, where 0

10. 发明申请

WO2005004189A2 SIDEWALL MAGNET IMPROVING UNIFORMITY OF INDUCTIVELY COUPLED PLASMA AND SHIELDS USED THEREWITH 审中-公开
标题翻译：电动磁铁改善电感耦合等离子体和平板电脑的均匀性
公开(公告)号：WO2005004189A2
公开(公告)日：2005-01-13
申请号：PCT/US2004/020186
申请日：2004-06-22
申请人： APPLIED MATERIALS, INC. , GUNG, Tza-Jing , TANG, Xianmin , FORSTER, John , DING, Peijun , SCHWEITZER, Marc , MILLER, Keith, A. , LAVITSKY, Ilya
发明人： GUNG, Tza-Jing , TANG, Xianmin , FORSTER, John , DING, Peijun , SCHWEITZER, Marc , MILLER, Keith, A. , LAVITSKY, Ilya
IPC分类号： H01J37/00
CPC分类号： H01J37/3402 , C23C14/046 , C23C14/345 , C23C14/3457 , C23C14/358 , H01J37/321 , H01J37/32623 , H01J37/3408 , H01J37/3411 , H01J37/3441 , H01J2237/3327 , H01L21/2855 , H01L21/76843 , H01L21/76877
摘要： One aspect of the invention includes an auxiliary magnet ring positioned outside of the chamber wall of a plasma sputter reactor and being disposed at least partially radially outwardly of an RF coil used to inductively generate a plasma, particularly for sputter etching the substrate being sputter deposited. Thereby, a magnetic barrier prevents the plasma from leaking outwardly to the coil and improves the uniformity of sputter etching. The magnetic field also acts as a magnetron when the coil, when made aspect of the same material as the primary target, is being used as a secondary target. Another aspect of the invention includes a one-piece inner shield extending from the target to the pedestal with a smooth inner surface and supported by an annular flange in a middle portion of the shield. The shield may be used to support the RF coil.
摘要翻译：本发明的一个方面包括位于等离子体溅射反应器的室壁外部的辅助磁环，并且至少部分地设置在用于感应地产生等离子体的RF线圈的径向外侧，特别是用于溅射蚀刻被溅射沉积的衬底。因此，磁屏障防止等离子体向外泄漏到线圈并提高溅射蚀刻的均匀性。当线圈当与主要目标相同的材料制成的方面被用作次要靶时，磁场也用作磁控管。本发明的另一方面包括从目标件延伸到具有光滑的内表面并由屏蔽件的中间部分中的环形凸缘支撑的一体式内屏蔽件。屏蔽可用于支持RF线圈。

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