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1. 发明申请

WO2009124669A1 A METHOD OF ASSESSING A MODEL OF A SUBSTRATE, AN INSPECTION APPARATUS AND A LITHOGRAPHIC APPARATUS 审中-公开
标题翻译：评估基板，检查装置和平面设备的模型的方法
公开(公告)号：WO2009124669A1
公开(公告)日：2009-10-15
申请号：PCT/EP2009/002300
申请日：2009-03-30
申请人： ASML Netherlands B.V. , DEN BOEF, Arie Jeffrey , CRAMER, Hugo, Augustinus, Joseph , VAN DE KERKHOF, Marcus Adrianus , PELLEMANS, Henricus Petrus Maria , EBERT, Martin
发明人： DEN BOEF, Arie Jeffrey , CRAMER, Hugo, Augustinus, Joseph , VAN DE KERKHOF, Marcus Adrianus , PELLEMANS, Henricus Petrus Maria , EBERT, Martin
IPC分类号： G01N21/47 , G01N21/956 , G03F7/20
CPC分类号： G01N21/9501 , G01N21/47 , G01N21/95607 , G01N2021/8845 , G03F7/70625
摘要： A method of assessing a model of a substrate is presented. A scatterometry measurement is taken using radiation at a first wavelength. The wavelength of the radiation is then changed and a further scatterometry measurement taken. If the scatterometry measurements are consistent across a range of wavelengths then the model is sufficiently accurate. However, if the scatterometry measurements change as the wavelength changes then the model of the substrate is not sufficiently accurate.
摘要翻译：提出了一种评估底物模型的方法。使用第一波长的辐射进行散射测量。然后改变辐射的波长，并进行进一步的散射测量。如果散射测量在波长范围内是一致的，则模型是足够准确的。然而，如果散射测量值随着波长的变化而变化，则衬底的模型不够准确。

2. 发明申请

WO2009106253A1 INSPECTION METHOD AND APPARATUS, LITHOGRAPHIC APPARATUS, LITHOGRAPHIC PROCESSING CELL AND DEVICE MANUFACTURING METHOD 审中-公开
标题翻译：检查方法和装置，光刻设备，光刻处理单元和器件制造方法
公开(公告)号：WO2009106253A1
公开(公告)日：2009-09-03
申请号：PCT/EP2009/001141
申请日：2009-02-18
申请人： ASML Netherlands B.V. , PELLEMANS, Henricus, Petrus, Maria , DEN BOEF, Arie, Jeffrey
发明人： PELLEMANS, Henricus, Petrus, Maria , DEN BOEF, Arie, Jeffrey
IPC分类号： G01B11/02 , G01B11/24 , G03F7/20
CPC分类号： G01B11/24 , G03F7/70191 , G03F7/70633 , G03F7/7085
摘要： A scatterometer, configured to measure a property of a substrate, includes a radiation source which produces a radiation spot on a target formed on the surface of the substrate, the size of the radiation spot being smaller than the target in one direction along the target, the position of the radiation spot being moved along the surface in a series of discrete steps. A detector detects a spectrum of the radiation beam reflected from the target and produces measurement signals representative of the spectrum corresponding to each position of the radiation spot. A processor processes the measurement signals produced by the detector corresponding to each position of the radiation spot and derives a single value for the property.
摘要翻译：被配置为测量衬底性质的散射仪包括辐射源，其在形成在衬底表面上的靶上产生辐射点，辐射点的尺寸小于目标沿目标的一个方向的尺寸，辐射光斑在一系列离散步骤中沿着表面移动的位置。检测器检测从目标反射的辐射束的光谱，并产生表示与辐射光斑的每个位置对应的光谱的测量信号。处理器处理由检测器产生的与辐射点的每个位置相对应的测量信号，并为该属性导出单个值。

3. 发明申请

WO2009078708A1 DIFFRACTION BASED OVERLAY METROLOGY TOOL AND METHOD 审中-公开
标题翻译：基于DIFFRACTION的OVERLAY计量工具和方法
公开(公告)号：WO2009078708A1
公开(公告)日：2009-06-25
申请号：PCT/NL2008/050785
申请日：2008-12-09
申请人： ASML NETHERLANDS B.V. , DEN BOEF, Arie, Jeffrey
发明人： DEN BOEF, Arie, Jeffrey
IPC分类号： G03F7/20
CPC分类号： G01N21/95607 , G03F7/7015 , G03F7/70633
摘要： A method for determining overlay between a first grating (110) and a second grating (120) on a substrate (100), the second grating (120) on top of the first grating(110), the second grating (120) having substantially identical pitch (P1) as the first grating (110), the second and first gratings forming a composite grating (110,120), the method including providing a first illumination beam (IB) for illuminating the composite grating (110,120) under an angle of incidence (β) along a first horizontal direction (D1) along the surface of the substrate, and measuring a first intensity (i+) of a first order diffracted beam (B+) from the composite grating (110,120); providing a second illumination beam for illuminating the composite grating (11θ!i2O) under the angle of incidence (-β) along a second horizontal direction (D2) along the surface of the substrate, wherein the second horizontal direction (D2) is opposite to the first horizontal direction (DI)1 and measuring a second intensity (i-) of a minus first order diffracted beam (B-) from the composite grating (110,120).
摘要翻译：一种用于确定衬底（100）上的第一光栅（110）和第二光栅（120）之间的叠层的方法，所述第二光栅（120）在所述第一光栅（110）的顶部上，所述第二光栅（120）与第一光栅（110）相同的间距（P1），第二和第一光栅形成复合光栅（110,120），该方法包括提供用于在入射角度下照射复合光栅（110,120）的第一照明光束（IB）沿着所述基板的表面沿着第一水平方向（D1）沿着所述复合光栅（110,120）测量所述第一级衍射光束（B +）的第一强度（i +）; 提供第二照明光束，用于沿着基板的表面沿着第二水平方向（D2）在入射角（-β）处照射复合光栅（11πi2O），其中第二水平方向（D2）相反到第一水平方向（DI）1并且从复合光栅（110,120）测量负一级衍射光束（B-）的第二强度（i-）。

4. 发明申请

WO2010124704A1 METROLOGY APPARATUS, LITHOGRAPHY APPARATUS AND METHOD OF MEASURING A PROPERTY OF A SUBSTRATE 审中-公开
标题翻译：计量装置，测量装置和测量基板的性质的方法
公开(公告)号：WO2010124704A1
公开(公告)日：2010-11-04
申请号：PCT/EP2009/003155
申请日：2009-04-30
申请人： ASML Netherlands B.V. , VAN DER MAST, Karel, Diederick , VAN ASTEN, Nicolaas, Antonius, Allegondus, Johannes , DEN BOEF, Arie, Jeffrey
发明人： VAN DER MAST, Karel, Diederick , VAN ASTEN, Nicolaas, Antonius, Allegondus, Johannes , DEN BOEF, Arie, Jeffrey
IPC分类号： G03F7/20
CPC分类号： G03F7/70633 , G03F7/70616 , G03F7/70625
摘要： A metrology apparatus is configured to measure a property of a substrate. The metrology apparatus includes an illumination system configured to condition a radiation beam, an objective lens configured to project radiation onto the substrate, a detector configured to detect radiation reflected from a surface of the substrate, and an image field selecting device in the path of the reflected radiation constructed and arranged to select an area of an image field associated with the substrate. The selected area corresponds with a predetermined portion of the substrate. This arrangement may enable selection of different shapes and sizes of targets on the substrate and may enable in-die measurement of selected parameters.
摘要翻译：测量装置被配置为测量衬底的性质。该测量装置包括配置成调节辐射束的照明系统，配置成将辐射投影到衬底上的物镜，被配置为检测从衬底的表面反射的辐射的检测器，以及在该衬底的路径中的图像场选择装置反射辐射被构造和布置成选择与衬底相关联的图像场的区域。所选择的区域对应于基板的预定部分。这种布置可以使得能够在衬底上选择不同形状和尺寸的靶，并且可以使得所选参数的管芯内测量。

5. 发明申请

WO2009130010A9 METHOD AND APPARATUS FOR MEASURING LINE END SHORTENING, SUBSTRATE AND PATTERNING DEVICE 审中-公开
公开(公告)号：WO2009130010A9
公开(公告)日：2009-10-29
申请号：PCT/EP2009/002915
申请日：2009-04-22
申请人： ASML NETHERLANDS B.V. , VAN DER SCHAAR, Maurits , DEN BOEF, Arie Jeffrey , VAN HAREN, Richard Johannes Franciscus , VAN DE KERKHOF, Marcus Adrianus
发明人： VAN DER SCHAAR, Maurits , DEN BOEF, Arie Jeffrey , VAN HAREN, Richard Johannes Franciscus , VAN DE KERKHOF, Marcus Adrianus
IPC分类号： G03F7/20
摘要： End of line effect can occur during manufacture of components using a lithographic apparatus. These end of line effects can result in line end shortening of the features being manufactured. Such line end shortening may have an adverse impact on the component being manufactured. It is therefore desirable to predict and/or monitor the line end shortening. A test pattern is provided that has two separate areas such that, as designed, when the two areas are illuminated with radiation (for example from an angle-resolved scatterometer) they result in diffused radiation with asymmetry that is equal in sign to each other, but opposite in magnitude. When the test pattern is actually manufactured, line end shortening occurs, and so the asymmetry of the two areas are not equal and opposite. From the measured asymmetry of the manufactured test pattern, the amount of line end shortening that has occurred can be estimated.

6. 发明申请

WO2009130010A1 METHOD AND APPARATUS FOR MEASURING LINE END SHORTENING, SUBSTRATE AND PATTERNING DEVICE 审中-公开
标题翻译：用于测量线端部封装，基板和图案装置的方法和装置
公开(公告)号：WO2009130010A1
公开(公告)日：2009-10-29
申请号：PCT/EP2009/002915
申请日：2009-04-22
申请人： ASML NETHERLANDS B.V. , VAN DER SCHAAR, Maurits , DEN BOEF, Arie Jeffrey , VAN HAREN, Richard Johannes Franciscus , VAN DE KERKHOF, Marcus Adrianus
发明人： VAN DER SCHAAR, Maurits , DEN BOEF, Arie Jeffrey , VAN HAREN, Richard Johannes Franciscus , VAN DE KERKHOF, Marcus Adrianus
IPC分类号： G03F7/20
CPC分类号： G03F7/70683 , G01N21/95607 , G03F1/0092 , G03F1/14 , G03F1/44 , G03F1/84 , G03F7/70625 , G03F7/70641
摘要： End of line effect can occur during manufacture of components using a lithographic apparatus. These end of line effects can result in line end shortening of the features being manufactured. Such line end shortening may have an adverse impact on the component being manufactured. It is therefore desirable to predict and/or monitor the line end shortening. A test pattern is provided that has two separate areas such that, as designed, when the two areas are illuminated with radiation (for example from an angle-resolved scatterometer) they result in diffused radiation with asymmetry that is equal in sign to each other, but opposite in magnitude. When the test pattern is actually manufactured, line end shortening occurs, and so the asymmetry of the two areas are not equal and opposite. From the measured asymmetry of the manufactured test pattern, the amount of line end shortening that has occurred can be estimated.
摘要翻译：在使用光刻设备的部件的制造期间可能发生线路效应的结束。这些线路效应的结束可能导致正在制造的功能的线端缩短。这种线端缩短可能对正在制造的部件产生不利影响。因此，希望预测和/或监视线端缩短。提供了具有两个独立区域的测试图案，使得如设计的那样，当两个区域被辐射照射时（例如，从角度分辨的散射仪）照射，它们导致具有彼此相等的不对称性的漫射辐射，但在数量上相反。当实际制造测试图形时，发生线端缩短，因此两个区域的不对称性不相等。根据制造的测试图案的测量不对称性，可以估计发生的线端缩短量。

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