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1. 发明申请

WO2013062902A3 PHARMACEUTICAL COMPOSITIONS OF COMBINATIONS OF DIPEPTIDYL PEPTIDASE-4 INHIBITORS WITH ATORVASTATIN 审中-公开
标题翻译： DIPEPTIDYL PEPTIDASE-4抑制剂与ATORVASTATIN组合的药物组合物
公开(公告)号：WO2013062902A3
公开(公告)日：2015-06-18
申请号：PCT/US2012061304
申请日：2012-10-22
申请人： MERCK SHARP & DOHME , SOTTHIVIRAT SUTTHILUG , FAGAN EDWARD J , CHIN KATHERINE H , WOLDU ABRAHAM B , DELUCA CHARLES , MA DECHENG , WASYLASCHUK WALTER R , REGE BHAGWANT
发明人： SOTTHIVIRAT SUTTHILUG , FAGAN EDWARD J , CHIN KATHERINE H , WOLDU ABRAHAM B , DELUCA CHARLES , MA DECHENG , WASYLASCHUK WALTER R , REGE BHAGWANT
IPC分类号： C07D237/34 , C07D487/04
CPC分类号： A61K31/4985 , A61K9/2009 , A61K9/2018 , A61K9/2054 , A61K9/209 , A61K31/40 , A61K2300/00
摘要： This invention relates to a bilayer pharmaceutical compositions comprising fixed-dose combinations of a dipeptidyl peptidase-4 inhibitor and atorvastatin, or a pharmaceutically acceptable salt thereof, methods of preparing such pharmaceutical compositions, and methods of treating Type 2 diabetes with such pharmaceutical compositions.
摘要翻译：本发明涉及双层药物组合物，其包含二肽基肽酶-4抑制剂和阿托伐他汀或其药学上可接受的盐的固定剂量组合，制备该药物组合物的方法，以及用该药物组合物治疗2型糖尿病的方法。

2. 发明申请

WO2013062902A2 PHARMACEUTICAL COMPOSITIONS OF COMBINATIONS OF DIPEPTIDYL PEPTIDASE-4 INHIBITORS WITH ATORVASTATIN 审中-公开
标题翻译： DIPEPTIDYL PEPTIDASE-4抑制剂与ATORVASTATIN组合的药物组合物
公开(公告)号：WO2013062902A2
公开(公告)日：2013-05-02
申请号：PCT/US2012/061304
申请日：2012-10-22
申请人： MERCK SHARP & DOHME CORP. , SOTTHIVIRAT, Sutthilug , FAGAN, Edward, J. , CHIN, Katherine, H. , WOLDU, Abraham, B. , DELUCA, Charles , MA, Decheng , WASYLASCHUK, Walter, R. , REGE, Bhagwant
发明人： SOTTHIVIRAT, Sutthilug , FAGAN, Edward, J. , CHIN, Katherine, H. , WOLDU, Abraham, B. , DELUCA, Charles , MA, Decheng , WASYLASCHUK, Walter, R. , REGE, Bhagwant
IPC分类号： A61K9/20
CPC分类号： A61K31/4985 , A61K9/2009 , A61K9/2018 , A61K9/2054 , A61K9/209 , A61K31/40 , A61K2300/00
摘要： This invention relates to a bilayer pharmaceutical compositions comprising fixed-dose combinations of a dipeptidyl peptidase-4 inhibitor and atorvastatin, or a pharmaceutically acceptable salt thereof, methods of preparing such pharmaceutical compositions, and methods of treating Type 2 diabetes with such pharmaceutical compositions.
摘要翻译：本发明涉及双层药物组合物，其包含二肽基肽酶-4抑制剂和阿托伐他汀或其药学上可接受的盐的固定剂量组合，制备该药物组合物的方法，以及用该药物组合物治疗2型糖尿病的方法。

3. 发明申请

WO2008008098A3 PLASMA DEPOSITION APPARATUS AND METHOD FOR MAKING POLYCRYSTALLINE SILICON 审中-公开
标题翻译：等离子体沉积装置和制备多晶硅的方法
公开(公告)号：WO2008008098A3
公开(公告)日：2008-07-17
申请号：PCT/US2007005670
申请日：2007-03-06
申请人： SILICA TECH LLC , ASLAMI MOHD A , WU DAU , DELUCA CHARLES
发明人： ASLAMI MOHD A , WU DAU , DELUCA CHARLES
IPC分类号： C23C16/24 , C23C16/513
CPC分类号： C23C16/24 , C23C16/513 , H05H1/30
摘要： ? plasma deposition apparatus (100) for making polycrystalline silicon including a chamber for depositing said polycrystalline silicon, the chamber- having an exhaust system for recovering un-deposited gases; a support (103) located within the deposition chamber for holding a target substrate (104) having a deposition surface (106), the deposition surface defining a deposition zone (105); at least one induction coupled plasma torch (107) located within the deposition chamber and spaced apart from the support (103), the at least one induction coupled plasma torch (102) producing a plasma flame that is substantially perpendicular to the deposition surface (106), the plasma flame defining a reaction zone (126) for reacting at least one precursor gas source to produce the polycrystalline silicon for depositing a layer of the polycrystalline silicon the deposition surface (106).
摘要翻译：？用于制造多晶硅的等离子体沉积设备（100），其包括用于沉积所述多晶硅的室，所述室具有用于回收未沉积气体的排气系统; 位于所述沉积室内的用于保持具有沉积表面（106）的目标衬底（104）的支撑件（103），所述沉积表面限定沉积区域（105）; 至少一个感应耦合等离子体焰炬（107），其位于所述沉积室内并且与所述支撑件（103）间隔开，所述至少一个感应耦合等离子体焰炬（102）产生基本垂直于所述沉积表面（106）的等离子体火焰），等离子体火焰限定反应区（126），用于使至少一个前体气体源反应以产生用于沉积多晶硅层沉积表面（106）的多晶硅。

4. 发明申请

WO2008008098A2 PLASMA DEPOSITION APPARATUS AND METHOD FOR MAKING POLYCRYSTALLINE SILICON 审中-公开
标题翻译：等离子体沉积装置和制备多晶硅的方法
公开(公告)号：WO2008008098A2
公开(公告)日：2008-01-17
申请号：PCT/US2007/005670
申请日：2007-03-06
申请人： SILICA TECH, LLC , ASLAMI, Mohd, A. , WU, Dau , DELUCA, Charles
发明人： ASLAMI, Mohd, A. , WU, Dau , DELUCA, Charles
IPC分类号： C23C16/24 , C23C16/513
CPC分类号： C23C16/24 , C23C16/513 , H05H1/30
摘要： A plasma deposition apparatus for making polycrystalline silicon including a chamber for depositing said polycrystalline silicon, the chamber having an exhaust system for recovering un-deposited gases; a support located within the deposition chamber for holding a target substrate having a deposition surface, the deposition surface defining a deposition zone; at least one induction coupled plasma torch located within the deposition chamber and spaced apart from the support, the at least one induction coupled plasma torch producing a plasma flame that is substantially perpendicular to the deposition surface, the plasma flame defining a reaction zone for reacting at least one precursor gas source to produce the polycrystalline silicon for depositing a layer of the polycrystalline silicon the deposition surface.
摘要翻译：一种用于制造多晶硅的等离子体沉积设备，包括用于沉积所述多晶硅的室，所述室具有用于回收未沉积气体的排气系统; 位于所述沉积室内的用于保持具有沉积表面的目标基底的支撑体，所述沉积表面限定沉积区; 至少一个感应耦合等离子体焰炬，其位于所述沉积室内并与所述支撑件间隔开，所述至少一个感应耦合等离子体焰炬产生基本垂直于所述沉积表面的等离子体火焰，所述等离子体火焰限定用于在至少一个前体气体源，以产生用于沉积多晶硅层沉积表面的多晶硅。

5. 发明申请

WO2006057903A3 LIQUID AND SEMI-SOLID PHARMACEUTICAL FORMULATIONS FOR ORAL ADMINISTRATION OF A SUBSTITUTED AMIDE 审中-公开
标题翻译：用于口服给予取代的酰胺的液体和半固体药物制剂
公开(公告)号：WO2006057903A3
公开(公告)日：2006-07-20
申请号：PCT/US2005041836
申请日：2005-11-18
申请人： MERCK & CO INC , PERESYPKIN ANDREY V , DOKOU ELENI , MCKELVEY CRAIG , DELUCA CHARLES , ALANI LAMAN L , GIBSON TODD , EULER DANIELLE H , PANMAI SANTIPHARP , WUELFING W PETER , GANDEK THOMAS P , OSTOVIC DRAZEN , RHODES TIMOTHY , HAMILTON BRIAN K
发明人： PERESYPKIN ANDREY V , DOKOU ELENI , MCKELVEY CRAIG , DELUCA CHARLES , ALANI LAMAN L , GIBSON TODD , EULER DANIELLE H , PANMAI SANTIPHARP , WUELFING W PETER , GANDEK THOMAS P , OSTOVIC DRAZEN , RHODES TIMOTHY , HAMILTON BRIAN K
IPC分类号： A61K9/48
CPC分类号： A61K9/1075 , A61K9/4858
摘要： N-[1S,
摘要翻译： N- [1S，

6. 发明申请

WO2006057903A2 LIQUID AND SEMI-SOLID PHARMACEUTICAL FORMULATIONS FOR ORAL ADMINISTRATION OF A SUBSTITUTED AMIDE 审中-公开
标题翻译：液体和半固体药物制剂用于替代酰胺的口服施用
公开(公告)号：WO2006057903A2
公开(公告)日：2006-06-01
申请号：PCT/US2005/041836
申请日：2005-11-18
申请人： MERCK & CO., INC. , PERESYPKIN, Andrey, V. , DOKOU, Eleni , MCKELVEY, Craig , DELUCA, Charles , ALANI, Laman, L. , GIBSON, Todd , EULER, Danielle, H. , PANMAI, Santipharp , WUELFING, W., Peter , GANDEK, Thomas, P. , OSTOVIC, Drazen , RHODES, Timothy , HAMILTON, Brian, K.
发明人： PERESYPKIN, Andrey, V. , DOKOU, Eleni , MCKELVEY, Craig , DELUCA, Charles , ALANI, Laman, L. , GIBSON, Todd , EULER, Danielle, H. , PANMAI, Santipharp , WUELFING, W., Peter , GANDEK, Thomas, P. , OSTOVIC, Drazen , RHODES, Timothy , HAMILTON, Brian, K.
IPC分类号： A61K9/66
CPC分类号： A61K9/1075 , A61K9/4858
摘要： N -[1S,2S]-3-(4-chlorophenyl)-2-(3-cyanophenyl)-1-methylpropyl]-2-methyl-2-{[5-trifluoromethyl]pyridine-2-yl}oxy} propanamide (Compound I) has surprisingly improved solubility and bioavailability in a lipophilic vehicle comprising a pharmaceutically acceptable digestible oil, a surfactant, or a cosolvent, or a mixture of any two or more thereof. In one embodiment of the present invention are self-emulsifying or self- microemulsifying composition comprising 1) Compound I; 2) a surfactant having an HLB of 1 to 8; and 3) a surfactant having an HLB of over 8 to 20; and optionally, 4) a digestible oil and/or cosolvent and/or antioxidant or preservative.
摘要翻译： N- [1S，

7. 发明申请

WO2011094662A1 PLASMA DEPOSITION APPARATUS AND METHOD FOR MAKING HIGH-PURITY SILICON 审中-公开
标题翻译：等离子体沉积装置和制造高纯度硅的方法
公开(公告)号：WO2011094662A1
公开(公告)日：2011-08-04
申请号：PCT/US2011/023109
申请日：2011-01-31
申请人： US SOLARTECH, INC. , ASLAMI, Mohd , WU, Dau , DELUCA, Charles , HANSEN, Peter , DANILOV, Evgueni
发明人： ASLAMI, Mohd , WU, Dau , DELUCA, Charles , HANSEN, Peter , DANILOV, Evgueni
IPC分类号： C01B33/033 , H05H1/30 , C30B35/00 , C30B29/06 , B01J19/08
CPC分类号： C01B33/027 , C01B33/03 , C01B33/033 , C01B33/1071 , C01B33/10773 , C30B29/06 , C30B35/007 , H05H1/30
摘要： A plasma deposition apparatus for making high purity silicon, including a chamber for depositing said high purity silicon, the chamber including a top defining substantially an upper end of die chamber; one or more sides having an upper end and a lower end, the top substantially sealingly joining the upper end of the one or more sides; a base defining substantially a lower end of the chamber, the base substantially sealingly joining the lower end of the one or more sides; and at least one induction coupled plasma torch disposed in the top, the at least one induction coupled plasma torch oriented in a substantially vertical position producing a plasma flame downward from the top towards the base, the plasma flame defining a reaction zone for reacting one or more reactants to produce the high purity silicon. In addition, methods for collecting molten silicon are also provided.
摘要翻译：一种用于制造高纯度硅的等离子体沉积设备，包括用于沉积所述高纯度硅的室，所述室包括基本上限定模腔的上端的顶部; 一个或多个侧面具有上端和下端，顶部基本上密封地连接一个或多个侧面的上端; 基部基本上限定所述腔室的下端，所述基座基本上密封地连接所述一个或多个侧面的下端; 以及设置在顶部中的至少一个感应耦合等离子体焰炬，所述至少一个感应耦合等离子体焰炬在基本垂直的位置上取向，从顶部朝向底部产生等离子体火焰，所述等离子体火焰限定用于使一个或更多的反应物产生高纯硅。此外，还提供了收集熔融硅的方法。

8. 发明申请

US20080009126A1 Plasma deposition apparatus and method for making polycrystalline silicon 有权
标题翻译：等离子体沉积装置及制造多晶硅的方法
公开(公告)号：US20080009126A1
公开(公告)日：2008-01-10
申请号：US11714223
申请日：2007-03-06
申请人： Mohd A. Aslami , Dau Wu , DeLuca Charles
发明人： Mohd A. Aslami , Dau Wu , DeLuca Charles
IPC分类号： H01L21/20
CPC分类号： C23C16/24 , C23C16/513 , H05H1/30
摘要： A plasma deposition apparatus for making polycrystalline silicon including a chamber for depositing said polycrystalline silicon, the chamber having an exhaust system for recovering un-deposited gases; a support located within the deposition chamber for holding a target substrate having a deposition surface, the deposition surface defining a deposition zone; at least one induction coupled plasma torch located within the deposition chamber and spaced apart from the support, the at least one induction coupled plasma torch producing a plasma flame that is substantially perpendicular to the deposition surface, the plasma flame defining a reaction zone for reacting at least one precursor gas source to produce the polycrystalline silicon for depositing a layer of the polycrystalline silicon the deposition surface.
摘要翻译：一种用于制造多晶硅的等离子体沉积设备，包括用于沉积所述多晶硅的室，所述室具有用于回收未沉积气体的排气系统; 位于所述沉积室内的用于保持具有沉积表面的目标基底的支撑体，所述沉积表面限定沉积区; 至少一个感应耦合等离子体焰炬，其位于所述沉积室内并与所述支撑件间隔开，所述至少一个感应耦合等离子体焰炬产生基本垂直于所述沉积表面的等离子体火焰，所述等离子体火焰限定用于在至少一个前体气体源，以产生用于沉积多晶硅层沉积表面的多晶硅。

9. 发明授权

US07816269B2 Plasma deposition apparatus and method for making polycrystalline silicon 有权
公开(公告)号：US07816269B2
公开(公告)日：2010-10-19
申请号：US11714223
申请日：2007-03-06
申请人： Mohd A. Aslami , Dau Wu , DeLuca Charles
发明人： Mohd A. Aslami , Dau Wu , DeLuca Charles
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： C23C16/24 , C23C16/513 , H05H1/30
摘要： A plasma deposition apparatus for making polycrystalline silicon including a chamber for depositing said polycrystalline silicon, the chamber having an exhaust system for recovering un-deposited gases; a support located within the deposition chamber for holding a target substrate having a deposition surface, the deposition surface defining a deposition zone; at least one induction coupled plasma torch located within the deposition chamber and spaced apart from the support, the at least one induction coupled plasma torch producing a plasma flame that is substantially perpendicular to the deposition surface, the plasma flame defining a reaction zone for reacting at least one precursor gas source to produce the polycrystalline silicon for depositing a layer of the polycrystalline silicon the deposition surface.

10. 发明申请

US20090209093A1 PLASMA DEPOSITION APPARATUS AND METHOD FOR MAKING POLYCRYSTALLINE SILICON 有权
标题翻译：等离子体沉积装置和制备多晶硅的方法
公开(公告)号：US20090209093A1
公开(公告)日：2009-08-20
申请号：US12433188
申请日：2009-04-30
申请人： MOHD A. ASLAMI , DAU WU , DeLUCA CHARLES
发明人： MOHD A. ASLAMI , DAU WU , DeLUCA CHARLES
IPC分类号： H01L21/20
CPC分类号： C23C16/24 , C23C16/513 , H05H1/30
摘要： A plasma deposition apparatus for making polycrystalline silicon including a chamber for depositing said polycrystalline silicon, the chamber having an exhaust system for recovering un-deposited gases; a support located within the deposition chamber for holding a target substrate having a deposition surface, the deposition surface defining a deposition zone; at least one induction coupled plasma torch located within the deposition chamber and spaced apart from the support, the at least one induction coupled plasma torch producing a plasma flame that is substantially perpendicular to the deposition surface, the plasma flame defining a reaction zone for reacting at least one precursor gas source to produce the polycrystalline silicon for depositing a layer of the polycrystalline silicon the deposition surface.
摘要翻译：一种用于制造多晶硅的等离子体沉积设备，包括用于沉积所述多晶硅的室，所述室具有用于回收未沉积气体的排气系统; 位于所述沉积室内的用于保持具有沉积表面的目标基底的支撑体，所述沉积表面限定沉积区; 至少一个感应耦合等离子体焰炬，其位于所述沉积室内并与所述支撑件间隔开，所述至少一个感应耦合等离子体焰炬产生基本垂直于所述沉积表面的等离子体火焰，所述等离子体火焰限定用于在至少一个前体气体源，以产生用于沉积多晶硅层沉积表面的多晶硅。

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