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    • 3. 发明申请
    • METHOD AND DEVICE FOR SELECTIVELY REFRESHING A REGION OF A MEMORY OF A DATA STORAGE DEVICE
    • 用于选择性地刷新数据存储设备的存储器的区域的方法和设备
    • WO2011002657A1
    • 2011-01-06
    • PCT/US2010/039708
    • 2010-06-23
    • SANDISK CORPORATIOND'ABREU, Manuel, AntonioSKALA, Stephen
    • D'ABREU, Manuel, AntonioSKALA, Stephen
    • G06F11/00G06F11/10G11C11/4076
    • G11C16/10G06F11/1068G11C16/3431
    • A method and device for selectively refreshing a region of a non volatile memory of a data storage device is disclosed. In a particular embodiment, a method is disclosed that includes comparing a time stamp received from a host device to a first time stamp retrieved from a data storage device for a first region of a non volatile memory, the first region including a least recently accessed region of a memory array within the data storage device. The method also includes selectively refreshing the first region based on a comparison of a difference between the time stamp received from the host device and the first time stamp as compared to a threshold, where the threshold is adjusted based on a first error count corresponding to a number of errors detected by an error correction code (ECC) engine with respect to data retrieved from the first region.
    • 公开了一种用于有选择地刷新数据存储装置的非易失性存储器的区域的方法和装置。 在特定实施例中,公开了一种方法,其包括将从主机设备接收的时间标记与从非易失性存储器的第一区域的数据存储设备检索的第一时间标记进行比较,所述第一区域包括最近访问的区域 的数据存储设备内的存储器阵列。 该方法还包括基于从主机设备接收的时间戳和与阈值相比较的第一时间戳之间的差异的比较来选择性地刷新第一区域,其中基于对应于第一时间戳的第一错误计数来调整阈值 由纠错码(ECC)引擎相对于从第一区域检索的数据检测到的错误的数量。
    • 6. 发明申请
    • DATA STORAGE DEVICE AND METHOD TO CORRECT BIT VALUES USING MULTIPLE READ VOLTAGES
    • 数据存储设备和使用多个读取电压校正位值的方法
    • WO2013039696A1
    • 2013-03-21
    • PCT/US2012/052889
    • 2012-08-29
    • SANDISK TECHNOLOGIES INC.D'ABREU, Manuel AntonioSKALA, Stephen
    • D'ABREU, Manuel AntonioSKALA, Stephen
    • G06F11/10G11C16/34
    • G06F11/1068G06F11/1048G11C29/52
    • A data storage device includes a memory including a plurality of storage elements. The memory is configured to read a group of the storage elements using a first read voltage to obtain a first plurality of bit values. A controller is coupled to the memory. The controller is configured to initiate a first error correction code (ECC) procedure on the first plurality of bit values. In response to the first ECC procedure determining that the first plurality of bit values is not correctable, the controller is further configured to instruct the memory to read the group of the storage elements using a second read voltage to obtain a second plurality of bit values, and to change one or more values of the first plurality of bit values to corresponding values of the second plurality of bit values to generate a first plurality of corrected bit values.
    • 数据存储装置包括具有多个存储元件的存储器。 存储器被配置为使用第一读取电压读取一组存储元件以获得第一多个位值。 控制器耦合到存储器。 控制器被配置为针对第一多个位值启动第一纠错码(ECC)过程。 响应于第一ECC程序确定第一多个比特值不可校正,控制器还被配置为指示存储器使用第二读取电压读取该组存储元件以获得第二多个比特值, 并且将所述第一多个比特值中的一个或多个值改变为所述第二多个比特值的对应值,以生成第一多个校正比特值。