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1. 发明授权

US5132760A Electron wave deflection in modulation doped and other doped semiconductor structures 失效
标题翻译：调制掺杂和其他掺杂的半导体结构中的电子波偏差
公开(公告)号：US5132760A
公开(公告)日：1992-07-21
申请号：US708080
申请日：1991-05-24
申请人： Mordehai Heiblum , Uri Sivan , Corwin P. Umbach
发明人： Mordehai Heiblum , Uri Sivan , Corwin P. Umbach
IPC分类号： H01L29/68 , H01L21/338 , H01L29/06 , H01L29/08 , H01L29/423 , H01L29/772 , H01L29/778 , H01L29/812
CPC分类号： H01L29/0843 , H01L29/0642 , H01L29/42316 , H01L29/772
摘要： The present invention relates to semiconductor devices which incorporate doped semiconductor elements or modulation doped devices wherein ballistic electrons in these elements or in a two-dimensional electron gas (2-DEG) are deflected by shaped potential barriers. A shaped potential barrier is formed by depositing a shaped electrode on the surface of the device and applying a potential to it. The electrode may take the shape of a biconcave lens which induces a potential barrier of that shape in the underlying device. Upon transiting the potential barrier induced by the shaped electrode, the phases of the exiting electrons are different across the width of the electrode and the beam of electrons is focused. By changing the applied potential, the focal point of the exiting electrons may be moved in a direction parallel to the axis of the lens-like electrode. Other electrode configurations such as a biconvex shape will cause incident electrons to diverge from their original paths. In another embodiment, a triangular electrode, depending on the potentials applied to it, reflects, transmits or deflects incident electron waves.

2. 发明授权

US4751563A Microminiaturized electrical interconnection device and its method of fabrication 失效
标题翻译：微型电气互连器件及其制造方法
公开(公告)号：US4751563A
公开(公告)日：1988-06-14
申请号：US668537
申请日：1984-11-05
申请人： Robert B. Laibowitz , Corwin P. Umbach
发明人： Robert B. Laibowitz , Corwin P. Umbach
IPC分类号： H01L39/22 , H01L21/48 , H01L23/538 , H01L39/24 , H05K3/46 , H01L23/48
CPC分类号： H01L39/24 , H01L21/4846 , H01L23/538 , H01L2924/0002 , H05K3/4647
摘要： This invention relates to an interconnection device which includes microminiaturized conductive interconnections between a pair of conductive layers and to a method for fabricating such devices. The conductive interconnections are made from normal metal, superconductors, low bandgap insulators, semimetals or semiconductors depending on the application, and form vias between the two layers of normal metallic, superconducting, low bandgap insulating, semimetallic or semiconducting materials, or any combination of these materials. The structure and method of the present invention revolve about contamination resist cone structures which are formed by irradiating a carbonaceous film such as silicone oil with an electron beam. After the contamination cones are formed on a substrate, using one fabrication approach, a conductive layer is deposited on a portion of a cone and over the structure. An insulating material is deposited conformally over the conductive layer and cone such that thickness of the insulating material over the conductive layer has a thickness less than the height of the contamination cone. Those portions of the insulation material, the conductive layer and the contamination cone which extend beyond the nominal surface of the insulating layer are removed, exposing a portion of the cone and a portion of the conductive layer which forms an interconnection. In a final step, another layer of conductive material is deposited on the insulation layer and on the exposed portion of the conductive interconnection and cone such that an electrically conductive interconnection is made between the just deposited conductive layer and the initially deposited conductive layer.
摘要翻译：本发明涉及一种互连装置，其包括一对导电层之间的微小的导电互连以及制造这种装置的方法。根据应用，导电互连由普通金属，超导体，低带隙绝缘体，半金属或半导体制成，并且在正常金属，超导，低带隙绝缘，半金属或半导体材料的两层之间形成通孔，或者这些材料本发明的结构和方法围绕通过用电子束照射硅油等碳质膜形成的抗污锥体结构。在基底上形成污染锥体之后，使用一种制造方法，在锥体的一部分和结构上沉积导电层。绝缘材料被平坦地沉积在导电层和锥体上，使得导电层上的绝缘材料的厚度具有小于污染锥体的高度的厚度。除去延伸超过绝缘层的标称表面的绝缘材料，导电层和污染锥体的那些部分，暴露出形成互连的锥体的一部分和导电层的一部分。在最后的步骤中，另一层导电材料沉积在绝缘层上以及在导电互连和锥体的暴露部分上，使得在刚刚沉积的导电层和初始沉积的导电层之间形成导电互连。

3. 发明授权

US5026682A Devices using high T.sub.c superconductors 失效
标题翻译：使用高Tc超导体的器件
公开(公告)号：US5026682A
公开(公告)日：1991-06-25
申请号：US37912
申请日：1987-04-13
申请人： Gregory J. Clark , Richard J. Gambino , Roger H. Koch , Robert B. Laibowitz , Allan D. Marwick , Corwin P. Umbach
发明人： Gregory J. Clark , Richard J. Gambino , Roger H. Koch , Robert B. Laibowitz , Allan D. Marwick , Corwin P. Umbach
IPC分类号： G01R33/035 , H01L39/22 , H01L39/24
CPC分类号： H01L39/2464 , H01L39/225 , H01L39/249 , H01L39/2496 , Y10S505/701 , Y10S505/702 , Y10S505/725
摘要： A superconducting device operable at temperatures in excess of 30.degree. K. and a method for making the device are described. A representative device is an essentially coplanar SQUID device formed in a single layer of high T.sub.c superconducting material, the SQUID device being operable at temperatures in excess of 60.degree. K. High energy beams, for example ion beams, are used to convert selected portions of the high T.sub.c superconductor to nonsuperconductor properties so that the material now has both superconductive regions and nonsuperconductive regions. In this manner a superconducting loop having superconducting weak links can be formed to comprise the SQUID device.

4. 发明授权

US4982248A Gated structure for controlling fluctuations in mesoscopic structures 失效
标题翻译：用于控制介观结构波动的门控结构
公开(公告)号：US4982248A
公开(公告)日：1991-01-01
申请号：US295727
申请日：1989-01-11
申请人： Robert B. Laibowitz , Corwin P. Umbach
发明人： Robert B. Laibowitz , Corwin P. Umbach
IPC分类号： H01L29/78 , H01L29/772
CPC分类号： H01L29/772
摘要： A new solid state device based on mesoscopic phenomena is described. A structure of the mesoscopic device includes phase altering scattering sites at various energy levels disposed in proximity to a conductive channel. The carries in the channel, being isolated by a potential barrier, are not in substantial scattering interaction with the phase altering scattering sites in the absence of a sufficiently large voltage at the gate of the mesoscopic device. Increasing the potential at the gate, imposes a localized electric field along the channel, increases the energy levels of the carriers in the channel, and allows the carriers to interact with the phase altering scattering sites, thereby controllably varying the conductance of the channel.

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