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1. 发明授权

US08063455B2 Multi-terminal electromechanical nanocsopic switching device with control and release electrodes 有权
标题翻译：具有控制和释放电极的多端子机电纳米开关器件
公开(公告)号：US08063455B2
公开(公告)日：2011-11-22
申请号：US11285595
申请日：2005-11-22
申请人： Louis Charles Kordus, II , Colin Neal Murphy , Malcolm John Wing
发明人： Louis Charles Kordus, II , Colin Neal Murphy , Malcolm John Wing
IPC分类号： H01L51/10 , H01L49/02
CPC分类号： G11C13/025 , B82Y10/00 , G11C23/00 , Y10S977/938 , Y10S977/94 , Y10S977/943
摘要： A multi-terminal electromechanical nanoscopic switching device which may be used as a memory device, a pass gate, a transmission gate, or a multiplexer, among other things.
摘要翻译：可以用作存储器件，通孔，传输门或多路复用器的多端子机电纳米切换器件等。

2. 发明授权

US07511532B2 Reconfigurable logic structures 有权
标题翻译：可重构逻辑结构
公开(公告)号：US07511532B2
公开(公告)日：2009-03-31
申请号：US11267718
申请日：2005-11-03
申请人： Narbeh Derharcobian , Louis Charles Kordus, II , Colin Neal Murphy , Antonietta Oliva , Vei-Han Chan , Thomas Stewart, Jr.
发明人： Narbeh Derharcobian , Louis Charles Kordus, II , Colin Neal Murphy , Antonietta Oliva , Vei-Han Chan , Thomas Stewart, Jr.
IPC分类号： H03K19/177 , G11C11/34
CPC分类号： G11C13/0011 , B82Y10/00 , G11C13/0004 , G11C13/025 , G11C23/00 , H03K19/17736 , H03K19/17748 , H03K19/1778
摘要： Reconfigurable electronic structures and circuits using programmable, non-volatile memory elements. The programmable, non-volatile memory elements may perform the functions of storage and/or a switch to produce components such as crossbars, multiplexers, look-up tables (LUTs) and other logic circuits used in programmable logic structures (e.g., (FPGAs)). The programmable, non-volatile memory elements comprise one or more structures based on Phase Change Memory, Programmable Metallization, Carbon Nano-Electromechanical (CNT-NEM), or Metal Nano-Electromechanical device technologies.
摘要翻译：可重构的电子结构和电路使用可编程的非易失性存储元件。可编程的非易失性存储器元件可以执行存储和/或开关的功能，以产生诸如交叉开关，多路复用器，查找表（LUT）和在可编程逻辑结构（例如，（FPGA））中使用的其它逻辑电路的组件，）。可编程的非易失性存储元件包括基于相变存储器，可编程金属化，碳纳米机电（CNT-NEM）或金属纳米机电器件技术的一个或多个结构。

3. 发明申请

US20090134910A1 RECONFIGURABLE LOGIC STRUCTURES 有权
标题翻译：可重构逻辑结构
公开(公告)号：US20090134910A1
公开(公告)日：2009-05-28
申请号：US12350219
申请日：2009-01-07
申请人： Colin Neal Murphy , Narbeh Derhacobian , Louis Charles Kordus, II , Antonietta Oliva , Vei-Han Chan , Thomas E. Stewart, JR.
发明人： Colin Neal Murphy , Narbeh Derhacobian , Louis Charles Kordus, II , Antonietta Oliva , Vei-Han Chan , Thomas E. Stewart, JR.
IPC分类号： H03K19/177 , G11C11/00
CPC分类号： G11C13/0011 , B82Y10/00 , G11C13/0004 , G11C13/025 , G11C23/00 , H03K19/17736 , H03K19/17748 , H03K19/1778
摘要： Reconfigurable electronic structures and circuits using programmable, non-volatile memory elements. The programmable, non-volatile memory elements may perform the functions of storage and/or a switch to produce components such as crossbars, multiplexers, look-up tables (LUTs) and other logic circuits used in programmable logic structures (e.g., (FPGAs)). The programmable, non-volatile memory elements comprise one or more structures based on Phase Change Memory, Programmable Metallization, Carbon Nano-Electromechanical (CNT-NEM), or Metal Nano-Electromechanical device technologies.
摘要翻译：可重构的电子结构和电路使用可编程的非易失性存储元件。可编程的非易失性存储器元件可以执行存储和/或开关的功能，以产生诸如交叉开关，多路复用器，查找表（LUT）和在可编程逻辑结构（例如，（FPGA））中使用的其它逻辑电路的组件，）。可编程的非易失性存储元件包括基于相变存储器，可编程金属化，碳纳米机电（CNT-NEM）或金属纳米机电器件技术的一个或多个结构。

4. 发明授权

US07755389B2 Reconfigurable logic structures 有权
标题翻译：可重构逻辑结构
公开(公告)号：US07755389B2
公开(公告)日：2010-07-13
申请号：US12350219
申请日：2009-01-07
申请人： Colin Neal Murphy , Narbeh Derhacobian , Louis Charles Kordus, II , Antonietta Oliva , Vei-Han Chan , Thomas E. Stewart, Jr.
发明人： Colin Neal Murphy , Narbeh Derhacobian , Louis Charles Kordus, II , Antonietta Oliva , Vei-Han Chan , Thomas E. Stewart, Jr.
IPC分类号： H03K19/177 , G11C11/34
CPC分类号： G11C13/0011 , B82Y10/00 , G11C13/0004 , G11C13/025 , G11C23/00 , H03K19/17736 , H03K19/17748 , H03K19/1778
摘要： Reconfigurable electronic structures and circuits using programmable, non-volatile memory elements. The programmable, non-volatile memory elements may perform the functions of storage and/or a switch to produce components such as crossbars, multiplexers, look-up tables (LUTs) and other logic circuits used in programmable logic structures (e.g., (FPGAs)). The programmable, non-volatile memory elements comprise one or more structures based on Phase Change Memory, Programmable Metallization, Carbon Nano-Electromechanical (CNT-NEM), or Metal Nano-Electromechanical device technologies.
摘要翻译：可重构的电子结构和电路使用可编程的非易失性存储元件。可编程的非易失性存储器元件可以执行存储和/或开关的功能，以产生诸如交叉开关，多路复用器，查找表（LUT）和在可编程逻辑结构（例如，（FPGA））中使用的其它逻辑电路的组件，）。可编程的非易失性存储元件包括基于相变存储器，可编程金属化，碳纳米机电（CNT-NEM）或金属纳米机电器件技术的一个或多个结构。

5. 发明授权

US07675765B2 Phase-change memory (PCM) based universal content-addressable memory (CAM) configured as binary/ternary CAM 有权
标题翻译：配置为二进制/三进制CAM的基于相变存储器（PCM）的通用内容寻址存储器（CAM）
公开(公告)号：US07675765B2
公开(公告)日：2010-03-09
申请号：US11267781
申请日：2005-11-03
申请人： Narbeh Derharcobian , Colin Neal Murphy
发明人： Narbeh Derharcobian , Colin Neal Murphy
IPC分类号： G11C15/04
CPC分类号： G11C11/5678 , G11C13/0004 , G11C15/046
摘要： Content-addressable memory (CAM) cells comprised of phase change material devices (PCMDs), including PCMD-based binary CAM cells (PCMD-based BCAM cells), PCMD-based ternary CAM cells (PCMD-based TCAM cells), and PCMD-based universal CAM cells (PCMD-based UCAM cells). The PCMDs of the various PCMD-based CAM cells are configured and programmed in a manner that allows a logic “0” or a logic “1” to be stored by the CAM cell. The logic value stored by a given PCMD-based CAM cell depends on the program states of the PCMDs. A program state of a PCMD is determined by whether the phase change material of the PCMD has been allowed to solidify to a crystalline, low-resistance state during a programming operation, or whether the phase change material of the PCMD is forced to solidify to an amorphous, high-resistance state during the programming operation.
摘要翻译：由包括基于PCMD的二进制CAM单元（基于PCMD的BCAM单元），基于PCMD的三元CAM单元（基于PCMD的TCAM单元）和PCMD-based三元CAM单元组成的包括相变材料装置（PCMD）的内容寻址存储器（CAM）基于通用的CAM单元（基于PCMD的UCAM单元）。各种基于PCMD的CAM单元的PCMD以允许CAM单元存储逻辑“0”或逻辑“1”的方式进行配置和编程。由给定基于PCMD的CAM单元存储的逻辑值取决于PCMD的程序状态。 PCMD的编程状态由PCMD的相变材料是否已被允许在编程操作期间凝固成晶体，低电阻状态，或者PCMD的相变材料是否被迫固化为非线性，高电阻状态。

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