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1. 发明申请

US20130181308A1 METHODS OF FABRICATING DILUTE NITRIDE SEMICONDUCTOR MATERIALS FOR USE IN PHOTOACTIVE DEVICES AND RELATED STRUCTURES 有权
标题翻译：用于光电器件和相关结构的稀释氮化物半导体材料的制备方法
公开(公告)号：US20130181308A1
公开(公告)日：2013-07-18
申请号：US13720284
申请日：2012-12-19
申请人： Chantal Arena , Robin Scott , Claudio Canizares
发明人： Chantal Arena , Robin Scott , Claudio Canizares
IPC分类号： H01L33/32
CPC分类号： H01L33/32 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02546 , H01L21/0262 , H01L21/02664 , H01L27/153 , H01L31/03048 , H01L31/0687 , H01L31/1848 , H01L33/0062 , H01L33/08 , H01S5/32341 , H01S5/32358 , Y02E10/544
摘要： Dilute nitride III-V semiconductor materials may be formed by substituting As atoms for some N atoms within a previously formed nitride material to transform at least a portion of the previously formed nitride into a dilute nitride III-V semiconductor material that includes arsenic. Such methods may be employed in the fabrication of photoactive devices, such as photovoltaic cells and photoemitters. The methods may be carried out within a deposition chamber, such as a metalorganic chemical vapor deposition (MOCVD) or a vapor phase epitaxy (HVPE) chamber.
摘要翻译：稀氮化物III-V半导体材料可以通过用先前形成的氮化物材料中的一些N原子取代As原子将至少一部分先前形成的氮化物转化成包括砷的稀氮化物III-V半导体材料来形成。这种方法可以用于制造光电器件，例如光伏电池和光电放电器。该方法可以在沉积室内进行，例如金属有机化学气相沉积（MOCVD）或气相外延（HVPE）室。

2. 发明申请

US20150292088A1 DEPOSITION SYSTEMS HAVING INTERCHANGEABLE GAS INJECTORS AND RELATED METHODS 审中-公开
标题翻译：具有可交换气体注入器的沉积系统及相关方法
公开(公告)号：US20150292088A1
公开(公告)日：2015-10-15
申请号：US14443202
申请日：2013-11-20
申请人： Claudio CANIZARES , SOITEC
发明人： Claudio Canizares
IPC分类号： C23C16/455 , H01L21/02 , B23P19/04
CPC分类号： C23C16/45563 , B23P19/04 , C23C16/45504 , C23C16/45591 , C30B25/14 , C30B29/403 , C30B35/00 , H01L21/0262
摘要： A deposition system includes two or more gas injectors that may be interchangeably used in a chamber of the deposition system. Each of the gas injectors may be configured to generate a sheet of flowing gas over a substrate support structure. The sheets may have differing widths, such that the gas injectors may be used with substrates having different diameters, which may enable use of the system with different substrates while maintaining efficient use of precursor gas. A method of forming such a deposition system includes forming and configuring such gas injectors to be interchangeably used at a common location within the deposition chamber. A method of using such a deposition system includes using two or more such gas injectors to deposit material on substrates having different sizes.
摘要翻译：沉积系统包括可以在沉积系统的腔室中互换使用的两个或更多个气体喷射器。每个气体喷射器可以被配置成在衬底支撑结构上方产生流动气体片。片材可以具有不同的宽度，使得气体注入器可以与具有不同直径的基底一起使用，这可以使得能够在保持有效使用前体气体的同时使用不同的基底的系统。形成这种沉积系统的方法包括形成和配置这样的气体喷射器，以在沉积室内的公共位置可互换地使用。使用这种沉积系统的方法包括使用两个或更多个这种气体注入器将材料沉积在具有不同尺寸的基底上。

3. 发明申请

US20130164874A1 METHODS OF FORMING DILUTE NITRIDE MATERIALS FOR USE IN PHOTOACTIVE DEVICES AND RELATED STRUCTURES 有权
标题翻译：形成用于光电器件和相关结构的稀释氮化物材料的方法
公开(公告)号：US20130164874A1
公开(公告)日：2013-06-27
申请号：US13720524
申请日：2012-12-19
申请人： Chantal Arena , Robin Scott , Claudio Canizares
发明人： Chantal Arena , Robin Scott , Claudio Canizares
IPC分类号： H01L31/18 , H01L33/00 , H01L21/36
CPC分类号： H01L31/184 , H01L21/0254 , H01L21/02546 , H01L21/0262 , H01L27/153 , H01L33/0062 , H01L33/0066 , H01L33/08 , H01L33/32
摘要： Atomic layer deposition (ALD) or ALD-like deposition processes are used to fabricate dilute nitride III-V semiconductor materials. A first composition of process gases may be caused to flow into a deposition chamber, and a group V element other than nitrogen and one or more group III elements may be adsorbed over the substrate (in atomic or molecular form). Afterward, a second composition of process gases may be caused to flow into the deposition chamber, and N and one or more group III elements may be adsorbed over the substrate in the deposition chamber. An epitaxial layer of dilute nitride III-V semiconductor material may be formed over the substrate in the deposition chamber from the sequentially adsorbed elements.
摘要翻译：原子层沉积（ALD）或ALD样沉积工艺用于制造稀氮化物III-V半导体材料。可以使工艺气体的第一组合物流入沉积室，并且除了氮和一个或多个III族元素之外的第V族元素可以被吸附在衬底上（原子或分子形式）。之后，可以使工艺气体的第二组合物流入沉积室，并且可以在沉积室中将N和一个或多个III族元素吸附在衬底上。稀释氮化物III-V半导体材料的外延层可以从沉积室中的顺序吸附元件形成在衬底上。

4. 发明申请

US20130052333A1 DEPOSITION SYSTEMS HAVING REACTION CHAMBERS CONFIGURED FOR IN-SITU METROLOGY AND RELATED METHODS 审中-公开
标题翻译：具有针对现场计量学配置的反应室的沉积系统及相关方法
公开(公告)号：US20130052333A1
公开(公告)日：2013-02-28
申请号：US13327302
申请日：2011-12-15
申请人： Ed Lindow , Ronald Bertram , Claudio Canizares
发明人： Ed Lindow , Ronald Bertram , Claudio Canizares
IPC分类号： C23C16/52 , B23Q3/00
CPC分类号： C23C16/301 , C23C16/46 , C23C16/52 , C30B25/08 , C30B25/16 , C30B29/40 , H01L21/67115 , H01L21/67248 , Y10T29/49895
摘要： Deposition systems include a reaction chamber, at least one thermal radiation emitter for heating matter within the reaction chamber, and at least one metrology device for detecting and/or measuring a characteristic of a workpiece substrate in situ within the reaction chamber. One or more chamber walls may be transparent to the thermal radiation and to radiation signals to be received by the metrology device, so as to allow the radiation to pass into and out from the reaction chamber, respectively. At least one volume of opaque material is located to shield a sensor of the metrology device from at least some of the thermal radiation. Methods of forming a deposition system include providing such a volume of opaque material at a location shielding the sensor from the thermal radiation. Methods of using a deposition system include shielding the sensor from at least some of the thermal radiation.
摘要翻译：沉积系统包括反应室，用于在反应室内加热物质的至少一个热辐射发射器，以及用于在反应室内原位检测和/或测量工件基板的特性的至少一个计量装置。一个或多个室壁对于热辐射以及由测量装置接收的辐射信号可以是透明的，以便允许辐射分别进入和离开反应室。定位至少一个体积的不透明材料以将计量装置的传感器与至少一些热辐射隔离。形成沉积系统的方法包括在屏蔽传感器免受热辐射的位置提供这样的体积不透明材料。使用沉积系统的方法包括将传感器与至少一些热辐射隔离。

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