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1. 发明授权

US08450801B2 Lateral-diffusion metal-oxide-semiconductor device 有权
标题翻译：侧向扩散金属氧化物半导体器件
公开(公告)号：US08450801B2
公开(公告)日：2013-05-28
申请号：US12869764
申请日：2010-08-27
申请人： Hong-Ze Lin , Bo-Jui Huang , Chin-Lung Chen , Ting-Zhou Yan , Wei-Shan Liao , Han-Min Huang , Chun-Yao Lee , Kun-Yi Chou
发明人： Hong-Ze Lin , Bo-Jui Huang , Chin-Lung Chen , Ting-Zhou Yan , Wei-Shan Liao , Han-Min Huang , Chun-Yao Lee , Kun-Yi Chou
IPC分类号： H01L23/62
CPC分类号： H01L29/0878 , H01L29/0692 , H01L29/0847 , H01L29/41758 , H01L29/42368 , H01L29/4238 , H01L29/7835
摘要： A lateral-diffusion metal-oxide-semiconductor device includes a semiconductor substrate having at least a field oxide layer, a gate having a layout pattern of a racetrack shape formed on the substrate, a common source formed in the semiconductor substrate and enclosed by the gate, and a drain surrounding the gate and formed in the semiconductor substrate. The gate covers a portion of the field oxide layer. The common source includes a first doped region having a first conductive type and a plurality of islanding second doped regions having a second conductive type. The drain includes a third doped region having the first conductive type. The third doped region overlaps a portion of the field oxide layer and having an overlapping area between the third doped region and the field oxide layer.
摘要翻译：横向扩散金属氧化物半导体器件包括至少具有场氧化物层的半导体衬底，在衬底上形成有轨迹形状的布局图案的栅极，形成在半导体衬底中并被栅极包围的公共源极以及围绕栅极并形成在半导体衬底中的漏极。栅极覆盖场氧化物层的一部分。公共源包括具有第一导电类型的第一掺杂区域和具有第二导电类型的多个岛状第二掺杂区域。漏极包括具有第一导电类型的第三掺杂区域。第三掺杂区域与场氧化物层的一部分重叠，并且在第三掺杂区域和场氧化物层之间具有重叠区域。

2. 发明申请

US20120262131A1 Rotating Electrical Machine Abnormal State Detection Method and Apparatus and Wind Driven Generating System Using the Same 有权
标题翻译：旋转电机异常状态检测方法及装置及其驱动发电系统
公开(公告)号：US20120262131A1
公开(公告)日：2012-10-18
申请号：US13301284
申请日：2011-11-21
申请人： Chun-Yao Lee
发明人： Chun-Yao Lee
IPC分类号： H02P9/02 , G06F19/00
CPC分类号： H02P9/02 , H02P29/0241
摘要： A rotating electrical machine abnormal state detection apparatus is provided. The apparatus includes: a current signal acquisition unit, coupled to a rotating electrical machine, for acquiring a set of real-time current waveforms from the rotating electrical machine; a state characteristic database, pre-storing a plurality of abnormal state characteristics which respectively correspond to a plurality of abnormal states; and an abnormal state detection unit, coupled to the current signal acquisition unit and the state characteristic database, for performing signal analysis on the set of real-time current waveforms to produce a current state characteristic, and comparing the current state characteristic with the abnormal state characteristics pre-stored in the state characteristic database to determine the abnormal state of the rotating electrical machine.
摘要翻译：提供了一种旋转电机异常状态检测装置。该装置包括：电流信号获取单元，耦合到旋转电机，用于从旋转电机获取一组实时电流波形; 状态特征数据库，预先存储分别对应于多个异常状态的多个异常状态特性; 以及耦合到当前信号获取单元和状态特征数据库的异常状态检测单元，用于对该组实时电流波形执行信号分析以产生电流状态特性，并将当前状态特性与异常状态进行比较特征预存在状态特征数据库中，以确定旋转电机的异常状态。

3. 发明申请

US20120049277A1 LATERAL-DIFFUSION METAL-OXIDE-SEMICONDUCTOR DEVICE 有权
标题翻译：侧向扩散金属氧化物半导体器件
公开(公告)号：US20120049277A1
公开(公告)日：2012-03-01
申请号：US12869764
申请日：2010-08-27
申请人： Hong-Ze Lin , Bo-Jui Huang , Chin-Lung Chen , Ting-Zhou Yan , Wei-Shan Liao , Han-Min Huang , Chun-Yao Lee , Kun-Yi Chou
发明人： Hong-Ze Lin , Bo-Jui Huang , Chin-Lung Chen , Ting-Zhou Yan , Wei-Shan Liao , Han-Min Huang , Chun-Yao Lee , Kun-Yi Chou
IPC分类号： H01L29/78
CPC分类号： H01L29/0878 , H01L29/0692 , H01L29/0847 , H01L29/41758 , H01L29/42368 , H01L29/4238 , H01L29/7835
摘要： A lateral-diffusion metal-oxide-semiconductor device includes a semiconductor substrate having at least a field oxide layer, a gate having a layout pattern of a racetrack shape formed on the substrate, a common source formed in the semiconductor substrate and enclosed by the gate, and a drain surrounding the gate and formed in the semiconductor substrate. The gate covers a portion of the field oxide layer. The common source includes a first doped region having a first conductive type and a plurality of islanding second doped regions having a second conductive type. The drain includes a third doped region having the first conductive type. The third doped region overlaps a portion of the field oxide layer and having an overlapping area between the third doped region and the field oxide layer.
摘要翻译：横向扩散金属氧化物半导体器件包括至少具有场氧化物层的半导体衬底，在衬底上形成有轨迹形状的布局图案的栅极，形成在半导体衬底中并被栅极包围的公共源极以及围绕栅极并形成在半导体衬底中的漏极。栅极覆盖场氧化物层的一部分。公共源包括具有第一导电类型的第一掺杂区域和具有第二导电类型的多个岛状第二掺杂区域。漏极包括具有第一导电类型的第三掺杂区域。第三掺杂区域与场氧化物层的一部分重叠，并且在第三掺杂区域和场氧化物层之间具有重叠区域。

4. 发明授权

US08546880B2 Anti punch-through leakage current metal-oxide-semiconductor transistor and manufacturing method thereof 有权
标题翻译：防穿孔漏电流金属氧化物半导体晶体管及其制造方法
公开(公告)号：US08546880B2
公开(公告)日：2013-10-01
申请号：US12943114
申请日：2010-11-10
申请人： Chun-Yao Lee , Chin-Lung Chen , Wei-Chun Chang , Hung-Te Lin , Han-Min Huang
发明人： Chun-Yao Lee , Chin-Lung Chen , Wei-Chun Chang , Hung-Te Lin , Han-Min Huang
IPC分类号： H01L29/78
CPC分类号： H01L29/66477 , H01L29/0878 , H01L29/42368 , H01L29/66681 , H01L29/7816
摘要： An anti punch-through leakage current MOS transistor and a manufacturing method thereof are provided. A high voltage deep first type well region and a first type light doping region are formed in a second type substrate. A mask with a dopant implanting opening is formed on the second type substrate. An anti punch-through leakage current structure is formed by implanting the first type dopant through the dopant implanting opening. A doping concentration of the first type dopant of the high voltage deep first type well region is less than that of the anti punch-through leakage current structure and greater than that of the high voltage deep first type well region. A second type body is formed by implanting a second type dopant through the dopant implanting opening. A gate structure is formed on the second type substrate.
摘要翻译：提供一种抗穿通漏电流MOS晶体管及其制造方法。在第二类型的衬底中形成高电压深第一类型阱区和第一类型掺杂区。具有掺杂剂注入口的掩模形成在第二类型衬底上。通过在掺杂剂注入口中注入第一种类型的掺杂剂形成抗穿透漏电流结构。高压深度第一类型阱区域的第一种掺杂剂的掺杂浓度小于抗穿透漏电流结构的掺杂浓度，并且大于高电压深度第一类型阱区域的掺杂浓度。通过在掺杂剂注入口中注入第二种掺杂剂形成第二类型体。栅极结构形成在第二类型基板上。

5. 发明授权

US08482063B2 High voltage semiconductor device 有权
标题翻译：高压半导体器件
公开(公告)号：US08482063B2
公开(公告)日：2013-07-09
申请号：US13299446
申请日：2011-11-18
申请人： An-Hung Lin , Hong-Ze Lin , Bo-Jui Huang , Wei-Shan Liao , Ting-Zhou Yan , Wei-Chun Chang , Chun-Yao Lee , Kun-Yi Chou
发明人： An-Hung Lin , Hong-Ze Lin , Bo-Jui Huang , Wei-Shan Liao , Ting-Zhou Yan , Wei-Chun Chang , Chun-Yao Lee , Kun-Yi Chou
IPC分类号： H01L29/66
CPC分类号： H01L29/0696 , H01L29/0634 , H01L29/0878 , H01L29/1045 , H01L29/1083 , H01L29/1095 , H01L29/42368 , H01L29/4238 , H01L29/7816 , H01L29/7835
摘要： A high voltage semiconductor device is provided. A first-polarity buried layer is formed in the substrate. A first high voltage second-polarity well region is located over the first-polarity buried layer. A second-polarity base region is disposed within the first high voltage second-polarity well region. A source region is disposed within the second-polarity base region. A high voltage deep first-polarity well region is located over the first-polarity buried layer and closely around the first high voltage second-polarity well region. A first-polarity drift region is disposed within the high voltage deep first-polarity well region. A gate structure is disposed over the substrate. A second high voltage second-polarity well region is located over the first-polarity buried layer and closely around the high voltage deep first-polarity well region. A deep first-polarity well region is located over the first-polarity buried layer and closely around the second high voltage second-polarity well region.
摘要翻译：提供高压半导体器件。在衬底中形成第一极性掩埋层。第一高电压第二极性阱区位于第一极性掩埋层的上方。第二极性基极区域设置在第一高电压第二极性阱区域内。源极区域设置在第二极性基极区域内。高电压深的第一极性极区位于第一极性埋层之上，紧邻第一高电压第二极性阱区。第一极性漂移区域设置在高电压深第一极性阱区域内。栅极结构设置在衬底上。第二高电压第二极性阱区域位于第一极性掩埋层上方并且紧邻高电压深第一极性阱区域。深第一极性阱区域位于第一极性掩埋层上并且紧邻第二高电压第二极性阱区域。

6. 发明申请

US20120112276A1 ANTI PUNCH-THROUGH LEAKAGE CURRENT METAL-OXIDE-SEMICONDUCTOR TRANSISTOR AND MANUFACTURING METHOD THEREOF 有权
标题翻译：防爆电流 - 金属氧化物半导体晶体管及其制造方法
公开(公告)号：US20120112276A1
公开(公告)日：2012-05-10
申请号：US12943114
申请日：2010-11-10
申请人： Chun-Yao LEE , Chin-Lung Chen , Wei-Chun Chang , Hung-Te Lin , Han-Min Huang
发明人： Chun-Yao LEE , Chin-Lung Chen , Wei-Chun Chang , Hung-Te Lin , Han-Min Huang
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/66477 , H01L29/0878 , H01L29/42368 , H01L29/66681 , H01L29/7816
摘要： An anti punch-through leakage current MOS transistor and a manufacturing method thereof are provided. A high voltage deep first type well region and a first type light doping region are formed in a second type substrate. A mask with a dopant implanting opening is formed on the second type substrate. An anti punch-through leakage current structure is formed by implanting the first type dopant through the dopant implanting opening. A doping concentration of the first type dopant of the high voltage deep first type well region is less than that of the anti punch-through leakage current structure and greater than that of the high voltage deep first type well region. A second type body is formed by implanting a second type dopant through the dopant implanting opening. A gate structure is formed on the second type substrate.
摘要翻译：提供一种抗穿通漏电流MOS晶体管及其制造方法。在第二类型的衬底中形成高电压深第一类型阱区和第一类型掺杂区。具有掺杂剂注入口的掩模形成在第二类型衬底上。通过在掺杂剂注入口中注入第一种类型的掺杂剂形成抗穿透漏电流结构。高压深度第一类型阱区域的第一种掺杂剂的掺杂浓度小于抗穿透漏电流结构的掺杂浓度，并且大于高电压深度第一类型阱区域的掺杂浓度。通过在掺杂剂注入口中注入第二种掺杂剂形成第二类型体。栅极结构形成在第二类型基板上。

7. 发明授权

US08692400B2 Rotating electrical machine abnormal state detection method and apparatus and wind driven generating system using the same 有权
标题翻译：旋转电机异常状态检测方法及装置及风力发电系统采用相同方式
公开(公告)号：US08692400B2
公开(公告)日：2014-04-08
申请号：US13301284
申请日：2011-11-21
申请人： Chun-Yao Lee
发明人： Chun-Yao Lee
IPC分类号： H02P9/04
CPC分类号： H02P9/02 , H02P29/0241
摘要： A rotating electrical machine abnormal state detection apparatus is provided. The apparatus includes: a current signal acquisition unit, coupled to a rotating electrical machine, for acquiring a set of real-time current waveforms from the rotating electrical machine; a state characteristic database, pre-storing a plurality of abnormal state characteristics which respectively correspond to a plurality of abnormal states; and an abnormal state detection unit, coupled to the current signal acquisition unit and the state characteristic database, for performing signal analysis on the set of real-time current waveforms to produce a current state characteristic, and comparing the current state characteristic with the abnormal state characteristics pre-stored in the state characteristic database to determine the abnormal state of the rotating electrical machine.
摘要翻译：提供了一种旋转电机异常状态检测装置。该装置包括：电流信号获取单元，耦合到旋转电机，用于从旋转电机获取一组实时电流波形; 状态特征数据库，预先存储分别对应于多个异常状态的多个异常状态特性; 以及耦合到当前信号获取单元和状态特征数据库的异常状态检测单元，用于对该组实时电流波形执行信号分析以产生电流状态特性，并将当前状态特性与异常状态进行比较特征预存在状态特征数据库中，以确定旋转电机的异常状态。

8. 发明申请

US20130126968A1 HIGH VOLTAGE SEMICONDUCTOR DEVICE 有权
标题翻译：高电压半导体器件
公开(公告)号：US20130126968A1
公开(公告)日：2013-05-23
申请号：US13299446
申请日：2011-11-18
申请人： An-Hung LIN , Hong-Ze Lin , Bo-Jui Huang , Wei-Shan Liao , Ting-Zhou Yan , Wei-Chun Chang , Chun-Yao Lee , Kun-Yi Chou
发明人： An-Hung LIN , Hong-Ze Lin , Bo-Jui Huang , Wei-Shan Liao , Ting-Zhou Yan , Wei-Chun Chang , Chun-Yao Lee , Kun-Yi Chou
IPC分类号： H01L29/78
CPC分类号： H01L29/0696 , H01L29/0634 , H01L29/0878 , H01L29/1045 , H01L29/1083 , H01L29/1095 , H01L29/42368 , H01L29/4238 , H01L29/7816 , H01L29/7835
摘要： A high voltage semiconductor device is provided. A first-polarity buried layer is formed in the substrate. A first high voltage second-polarity well region is located over the first-polarity buried layer. A second-polarity base region is disposed within the first high voltage second-polarity well region. A source region is disposed within the second-polarity base region. A high voltage deep first-polarity well region is located over the first-polarity buried layer and closely around the first high voltage second-polarity well region. A first-polarity drift region is disposed within the high voltage deep first-polarity well region. A gate structure is disposed over the substrate. A second high voltage second-polarity well region is located over the first-polarity buried layer and closely around the high voltage deep first-polarity well region. A deep first-polarity well region is located over the first-polarity buried layer and closely around the second high voltage second-polarity well region.
摘要翻译：提供高压半导体器件。在衬底中形成第一极性掩埋层。第一高电压第二极性阱区位于第一极性掩埋层的上方。第二极性基极区域设置在第一高电压第二极性阱区域内。源极区域设置在第二极性基极区域内。高电压深的第一极性极区位于第一极性埋层之上，紧邻第一高电压第二极性阱区。第一极性漂移区域设置在高电压深第一极性阱区域内。栅极结构设置在衬底上。第二高电压第二极性阱区域位于第一极性掩埋层上方并且紧邻高电压深第一极性阱区域。深第一极性阱区域位于第一极性掩埋层上并且紧邻第二高电压第二极性阱区域。

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