会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明授权
    • Electrostatic discharge protective circuit formed by use of a silicon
controlled rectifier
    • 使用可控硅整流器形成的静电放电保护电路
    • US6072677A
    • 2000-06-06
    • US184897
    • 1998-11-03
    • Mainn-Gwo ChenMing-Jer ChenChuan H. Liu
    • Mainn-Gwo ChenMing-Jer ChenChuan H. Liu
    • H01L27/02H02H9/04
    • H01L27/0259H01L27/0251
    • An electrostatic discharge protective circuit formed by use of a silicon controller rectifier is coupled to an input port and an internal circuit for discharging electrostatic charges on the input port to ground. When the electrostatic charges are applied on the input port, a punch-through effect is created between a first P-type diffusion region and a second N-type diffusion region to turn on a parasitic NPN bipolar junction transistor. At the same time, a voltage is applied on a gate of the MOS transistor via a small-signal equivalent capacitor to turn on itself, thereby discharging the electrostatic charges. Accordingly, the trigger voltage of the silicon controller rectifier can be efficiently lowered to improve the electrostatic discharge protective capability of the silicon control rectifier.
    • 通过使用硅控制器整流器形成的静电放电保护电路耦合到输入端口和内部电路,用于将输入端口上的静电电荷排放到地。 当静电电荷施加到输入端口时,在第一P型扩散区域和第二N型扩散区域之间产生穿透效应,以接通寄生NPN双极结型晶体管。 同时,通过小信号等效电容器在MOS晶体管的栅极上施加电压以使其自身导通,从而放电静电电荷。 因此,可以有效地降低硅控制整流器的触发电压,以提高硅控整流器的静电放电保护能力。
    • 5. 发明授权
    • Reliability testing method of dielectric thin film
    • 电介质薄膜的可靠性测试方法
    • US06269315B1
    • 2001-07-31
    • US09232202
    • 1999-01-14
    • Kuan-Yu FuChuan H. LiuDonald ChengSheng-Hsing YangMu-Chun Wang
    • Kuan-Yu FuChuan H. LiuDonald ChengSheng-Hsing YangMu-Chun Wang
    • G01R2702
    • G01R31/129
    • A method for testing the reliability of a dielectric thin film. An exponential current ramp test is performed with a delay time to test the dielectric thin film. An exponential current ramp charge-to-breakdown distribution, which is represented by cumulative distribution failure percentage, is obtained. An exponential current ramp charge-to-breakdown at a cumulative distribution failure percentage is calculated. An exponential current ramp constant and a constant current stress constant at the cumulative distribution failure percentage are calculated. A constant current stress charge-to-breakdown at the cumulative distribution failure percentage is calculated by using a specified current density and the constant current stress constant at the cumulative distribution failure percentage. The constant current stress charge-to-breakdown at the cumulative distribution failure percentage is compared to a specified constant current stress charge-to-breakdown to determine the reliability of the dielectric thin film.
    • 一种用于测试电介质薄膜可靠性的方法。 以延迟时间进行指数电流斜坡测试来测试电介质薄膜。 获得由累积分布失效百分比表示的指数电流斜坡电荷到击穿分布。 计算累积分布失败百分比下的指数电流斜坡电荷分解。 计算累积分布失效百分比下的指数电流斜坡常数和恒定电流应力常数。 通过使用规定的电流密度和累积分布失效百分比下的恒定电流应力常数来计算累积分布失效百分比下的恒定电流应力电荷分解。 将累积分布失效百分比下的恒定电流应力电荷击穿与特定的恒定电流应力电荷分解进行比较,以确定电介质薄膜的可靠性。