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    • 3. 发明授权
    • Low temperature active matrix display device and method of fabricating the same
    • 低温有源矩阵显示装置及其制造方法
    • US07379149B2
    • 2008-05-27
    • US11262264
    • 2005-10-28
    • Yong Hae KimChoong Heui ChungJin Ho Lee
    • Yong Hae KimChoong Heui ChungJin Ho Lee
    • G02F1/1333G02F1/1343
    • H01L27/3265H01L27/1255H01L27/1288H01L27/3244H01L27/3262H01L29/78603H01L29/78621H01L2251/5315H01L2251/5338
    • Provided are a low temperature active matrix display device using a plastic substrate and method of fabricating the same. The low temperature active matrix display device includes: a plastic substrate; a reflection layer disposed on the plastic substrate; a buffer layer disposed on the reflection layer; a thin film transistor disposed on the buffer layer in a first region of the plastic substrate; an interlayer dielectric layer disposed on the thin film transistor; a capacitor disposed in a trench formed in a second region of the plastic substrate and having a first electrode connected to a source electrode and a drain electrode of the thin film transistor, the trench extending from the interlayer dielectric layer to the reflection layer; and a display device having one electrode connected to a second electrode of the capacitor. The above-described structure includes photoresist spacers to decrease a leakage current from the TFT, includes a reflector to protect the plastic substrate from deformation due to laser irradiation, and employs a three-dimensional capacitor to increase an aperture ratio.
    • 提供了使用塑料基板的低温有源矩阵显示装置及其制造方法。 低温有源矩阵显示装置包括:塑料基板; 设置在塑料基板上的反射层; 设置在反射层上的缓冲层; 设置在塑料基板的第一区域中的缓冲层上的薄膜晶体管; 设置在所述薄膜晶体管上的层间绝缘层; 电容器,设置在形成在所述塑料基板的第二区域中的沟槽中,并且具有连接到所述薄膜晶体管的源电极和漏电极的第一电极,所述沟槽从所述层间电介质层延伸到所述反射层; 以及具有连接到电容器的第二电极的一个电极的显示装置。 上述结构包括用于减少来自TFT的漏电流的光致抗蚀剂间隔物,包括用于保护塑料基板免受激光照射引起的变形的反射器,并且采用三维电容器来增加开口率。
    • 4. 发明授权
    • Field emission display having gate plate
    • 具有门板的场发射显示
    • US07309954B2
    • 2007-12-18
    • US10745736
    • 2003-12-23
    • Yoon Ho SongChi Sun HwangChoong Heui ChungJin Ho Lee
    • Yoon Ho SongChi Sun HwangChoong Heui ChungJin Ho Lee
    • H01J1/62
    • H01J29/481H01J29/028H01J29/467H01J31/127H01J2329/8625
    • The present invention relates to a field emission display in which a gate plate having a gate hole and a gate electrode around the gate hole is formed between an anode plate having phosphor and a cathode plate having a field emitter and a control device for controlling field emission current, wherein the field emitter of the cathode plate is constructed to be opposite to the phosphor of the anode plate through the gate hole.According to the present invention, it is possible to significantly reduce the display row/column driving voltage by applying scan and data signals of the field emission display to the control device of each pixel, And the present invention is directed to improve the brightness of the field emission display in such a manner that the electric field necessary for field emission is applied through the gate electrode of the gate plate to freely control the distance between the anode plate and the cathode plate, so that a high voltage can be applied to the anode.
    • 本发明涉及一种场致发射显示器,其中在具有荧光体的阳极板和具有场发射极的阴极板之间形成具有栅极孔和围绕栅极孔的栅电极的栅极板和用于控制场致发射的控制装置 电流,其中阴极板的场发射极被构造成通过栅极孔与阳极板的荧光体相对。 根据本发明,通过将场发射显示的扫描和数据信号施加到每个像素的控制装置,可以显着降低显示行/列驱动电压。本发明旨在提高 以通过栅极板的栅电极施加场发射所需的电场以自由地控制阳极板和阴极板之间的距离的方式进行场发射显示,从而可以向阳极施加高电压 。
    • 7. 发明授权
    • Ferroelectric random access memory device and method for the manufacture thereof
    • 铁电随机存取存储器件及其制造方法
    • US06410344B1
    • 2002-06-25
    • US09735945
    • 2000-12-14
    • Choong-Heui Chung
    • Choong-Heui Chung
    • H01L2100
    • H01L27/11502H01L28/55
    • A ferroelectric random access memory (FeRAM) device including an active matrix provided with a transistor and diffusion regions, a first capacitor structure formed on a portion of the active matrix and provided with a first capacitor thin film made of strontium bismuth tantalate (SBT), a second capacitor structure formed on a remaining portion of the active matrix and provided with a second capacitor thin film made of lead zirconate titanate (PZT), and a metal interconnection formed on the first and the second capacitor structures, thereby electrically connecting the first and the second capacitor structures to one of the diffusion regions.
    • 一种包括设置有晶体管和扩散区域的有源矩阵的铁电随机存取存储器(FeRAM)器件,形成在有源矩阵的一部分上并具有由锶铋钽酸盐(SBT)制成的第一电容器薄膜的第一电容器结构, 形成在所述有源矩阵的剩余部分上并且设置有由锆钛酸铅(PZT)制成的第二电容器薄膜的第二电容器结构,以及形成在所述第一和第二电容器结构上的金属互连,从而电连接所述第一和 第二电容器结构到一个扩散区域。
    • 8. 发明授权
    • Method of fabricating thin film transistor having multilayer structure and active matrix display device including the thin film transistor
    • 制造具有多层结构的薄膜晶体管的方法和包括该薄膜晶体管的有源矩阵显示装置
    • US07642143B2
    • 2010-01-05
    • US11870809
    • 2007-10-11
    • Yong Hae KimChoong Heui ChungJae Hyun MoonYoon Ho Song
    • Yong Hae KimChoong Heui ChungJae Hyun MoonYoon Ho Song
    • H01L21/338
    • H01L29/78603H01L27/124H01L29/4908
    • Provided are a method of fabricating a multilayered thin film transistor using a plastic substrate and an active matrix display device including the thin film transistor fabricated by the method. The method includes: preparing a substrate formed of plastic; forming a buffer insulating layer on the plastic substrate; forming a silicon layer on the buffer insulating layer; patterning the silicon layer to form an active layer; forming a gate insulating layer on the active layer; stacking a plurality of gate metal layers on the gate insulating layer; patterning the plurality of gate metal layers; and etching a corner region of the lowest gate metal layer formed on the gate insulating layer of the patterned gate metal layers. Accordingly, a gate metal is formed which includes a multilayered gate metal layer and has an etched corner region, thereby reducing an electric field of the corner to reduce a leakage current of the TFT.
    • 提供了使用塑料基板制造多层薄膜晶体管的方法和包括通过该方法制造的薄膜晶体管的有源矩阵显示装置。 该方法包括:制备由塑料形成的基材; 在塑料基板上形成缓冲绝缘层; 在所述缓冲绝缘层上形成硅层; 图案化硅层以形成有源层; 在有源层上形成栅极绝缘层; 在栅绝缘层上堆叠多个栅极金属层; 图案化多个栅极金属层; 并且蚀刻形成在图案化栅极金属层的栅极绝缘层上的最低栅极金属层的拐角区域。 因此,形成栅极金属,其包括多层栅极金属层并且具有蚀刻的拐角区域,从而减小拐角的电场以减小TFT的漏电流。