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    • 3. 发明授权
    • Semiconductor device and method for producing the same
    • 半导体装置及其制造方法
    • US06683662B2
    • 2004-01-27
    • US10003550
    • 2001-10-24
    • Akira FujitaChoei Sugitani
    • Akira FujitaChoei Sugitani
    • G02F1136
    • G02F1/13458G02F1/136204H01L23/538H01L2924/0002H01L2924/00
    • An interterminal anti-short-circuiting pattern is formed in an upper metal wire included in a connection terminal 3, for connecting to external driving LSI and the like, located on the projected portion of a bottom glass substrate 2. This pattern includes recess 4 and island 5 on which a contact hole 12a is formed through a protective insulating film. The protective insulating film has high residence to water penetration. Spread of the corrosion can be shut off by the recess surrounding the island. Short circuit occurrence due to interterminal current leak can be inhibited under high moisture conditions in the semiconductor device used for active matrix display, e.g. LCD panel.
    • 在连接端子3中包括的上部金属线中形成了一个连接到底部玻璃基板2的突出部分上的外部驱动LSI等的连接器的短路短路图案。该图案包括凹部4和 岛5上形成有通过保护绝缘膜形成的接触孔12a。 保护性绝缘膜具有高水分渗透性。 可以通过岛周围的凹槽来切断腐蚀的蔓延。 在用于有源矩阵显示的半导体器件中,在高湿度条件下,可以抑制由于交错电流泄漏引起的短路发生。 液晶面板
    • 7. 发明授权
    • Semiconductor device and method for producing the same
    • 半导体装置及其制造方法
    • US06184966B2
    • 2001-02-06
    • US09179654
    • 1998-10-27
    • Akira FujitaChoei Sugitani
    • Akira FujitaChoei Sugitani
    • G02F11395
    • G02F1/13458G02F1/136204H01L23/538H01L2924/0002H01L2924/00
    • An interterminal anti-short-circuiting pattern is formed in an upper metal wire included in a connection terminal 3, for connecting to external driving LSI and the like, located on the projected portion of a bottom glass substrate 2. This pattern includes recess 4 and island 5 on which a contact hole 12a is formed through a protective insulating film. The protective insulating film has high residence to water penetration. Spread of the corrosion can be shut off by the recess surrounding the island. Short circuit occurrence due to interterminal current leak can be inhibited under high moisture conditions in the semiconductor device used for active matrix display, e.g. LCD panel.
    • 在连接端子3中包括的上部金属线中形成了一个连接到底部玻璃基板2的突出部分上的外部驱动LSI等的连接器的短路短路图案。该图案包括凹部4和 岛5上形成有通过保护绝缘膜形成的接触孔12a。 保护性绝缘膜具有高水分渗透性。 可以通过岛周围的凹槽来切断腐蚀的蔓延。 在用于有源矩阵显示的半导体器件中,在高湿度条件下,可以抑制由于交错电流泄漏引起的短路发生。 液晶面板