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1. 发明授权

US08405081B2 Organic thin film transistor having peripheral metal structures 失效
标题翻译：具有周边金属结构的有机薄膜晶体管
公开(公告)号：US08405081B2
公开(公告)日：2013-03-26
申请号：US13076507
申请日：2011-03-31
申请人： Ching-Lin Fan , Yu-Zuo Lin , Chao-Hung Huang
发明人： Ching-Lin Fan , Yu-Zuo Lin , Chao-Hung Huang
IPC分类号： H01L29/04 , H01L29/10 , H01L31/036 , H01L31/0376 , H01L31/20 , H01L29/08 , H01L35/24 , H01L51/00 , H01L29/76 , H01L31/112 , H01L29/15 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L51/0529 , H01L51/0541 , H01L51/102
摘要： An organic thin field transistor is disclosed. The organic thin field transistor includes a first and a second insulting layers, a metal structure and an organic layer serving as an active layer. Materials of the first and the second insulting layers are different, and by performing an etching process, a surface of the metal structure and a surface of the second insulting layer are effectively aligned. Because of the high flatness of the surface of the metal structure and the second insulting layer, a continuous film-forming property and crystallinity of the active layer of the organic thin field transistor are improved, so as to achieve a better the electrical characteristic.
摘要翻译：公开了一种有机薄场晶体管。有机薄场晶体管包括第一和第二绝缘层，金属结构和用作有源层的有机层。第一和第二绝缘层的材料是不同的，并且通过进行蚀刻工艺，金属结构的表面和第二绝缘层的表面被有效地对准。由于金属结构和第二绝缘层的表面的平坦度高，有机薄膜晶体管的有源层的连续成膜性和结晶度得到改善，从而获得更好的电特性。

2. 发明授权

US06589864B2 Method for defining windows with different etching depths simultaneously 有权
标题翻译：同时定义具有不同蚀刻深度的窗口的方法
公开(公告)号：US06589864B2
公开(公告)日：2003-07-08
申请号：US09803855
申请日：2001-03-12
申请人： Gow-Zin Yiu , Tean-Sen Jen , Shao-Wu Hsu , Ming-Tien Lin , Ching-Lin Fan
发明人： Gow-Zin Yiu , Tean-Sen Jen , Shao-Wu Hsu , Ming-Tien Lin , Ching-Lin Fan
IPC分类号： H01L214763
CPC分类号： H01L29/66742 , H01L29/42384
摘要： A method for defining plural windows with different etching depths simultaneously is disclosed. The method includes steps of (a) forming a photoresist on a substrate having a multiple film structure thereon, (b) exposing a first region of the photoresist to a first exposure dose and a second region of the photoresist to a second exposure dose, (c) obtaining different remaining thickenesses of the photoresist on the first region and the second region by a development, and (d) etching the first region and the second region of the photoresist for forming the plural windows with different etching depths of the multiple film structure.
摘要翻译：公开了一种用于同时定义具有不同蚀刻深度的多个窗口的方法。该方法包括以下步骤：（a）在其上具有多个膜结构的基底上形成光致抗蚀剂，（b）将光致抗蚀剂的第一区域暴露于第一曝光剂量和第二曝光剂量的第二区域（ c）通过显影在第一区域和第二区域上获得光致抗蚀剂的不同剩余厚度，以及（d）蚀刻光致抗蚀剂的第一区域和第二区域，以形成具有不同蚀刻深度的多个窗口的多个膜结构。

3. 发明申请

US20120162175A1 PIXEL UNIT OF ORGANIC LIGHT EMITTING DIODE AND DISPLAY PANEL USING THE SAME 有权
标题翻译：有机发光二极管的像素单元和使用它的显示面板
公开(公告)号：US20120162175A1
公开(公告)日：2012-06-28
申请号：US13092977
申请日：2011-04-25
申请人： Ching-Lin Fan , Bo-Jhang Sun
发明人： Ching-Lin Fan , Bo-Jhang Sun
IPC分类号： G09G5/00
CPC分类号： G09G3/3258 , G09G2300/043 , G09G2310/0251 , G09G2320/045
摘要： A pixel unit for driving an organic light emitting diode (OLED) is disclosed. The pixel unit includes a driving transistor, a compensating capacitor, a selecting switch module, a power switch and a configuration switch. One terminal of the compensating capacitor is coupled to a gate of the driving transistor. The selecting switch module provides the ground voltage or the compensating voltage to the other terminal of the compensating capacitor according to a first control signal. The power switch is coupled between a power voltage and a drain of the driving transistor and is controlled by a second control signal. The configuration switch receives the first control signal for controlling a connecting configuration of the driving transistor. The pixel unit is driven according to the first and the second control signals for compensating threshold voltage shifting of the OLED and the driving transistor.
摘要翻译：公开了一种用于驱动有机发光二极管（OLED）的像素单元。像素单元包括驱动晶体管，补偿电容器，选择开关模块，电源开关和配置开关。补偿电容器的一个端子耦合到驱动晶体管的栅极。选择开关模块根据第一控制信号将补偿电压或补偿电压提供给补偿电容器的另一端。电源开关耦合在驱动晶体管的电源电压和漏极之间，并由第二控制信号控制。配置开关接收用于控制驱动晶体管的连接配置的第一控制信号。根据用于补偿OLED和驱动晶体管的阈值电压偏移的第一和第二控制信号来驱动像素单元。

4. 发明申请

US20120135562A1 METHODS OF FORMING HYDROPHOBIC SILICON DIOXIDE LAYER AND FORMING ORGANIC THIN FILM TRANSISTOR 失效
标题翻译：形成二氧化硅二氧化硅层和形成有机薄膜晶体管的方法
公开(公告)号：US20120135562A1
公开(公告)日：2012-05-31
申请号：US13006424
申请日：2011-01-14
申请人： Ching-Lin Fan , Ping-Cheng Chiu , Chang-Chih Lin
发明人： Ching-Lin Fan , Ping-Cheng Chiu , Chang-Chih Lin
IPC分类号： H01L51/40 , H01L21/31
CPC分类号： H01L21/02126 , H01L21/02274 , H01L51/0525
摘要： A method of forming a hydrophobic silicon dioxide layer is provided. A substrate is provided. Thereafter, a hydrophobic silicon dioxide layer is formed on the substrate by using a plasma chemical vapour deposition (CVD) system, in which tetraethyl orthosilicate (TEOS) and an oxygen-containing gas are introduced at a reactive temperature between 25° C. and 150° C. A method of forming an organic thin film transistor (OTFT) including the hydrophobic silicon dioxide layer as a gate insulating layer is also provided. In the present invention, the hydrophobic silicon dioxide layer can be directly formed at low temperature without using the conventional surface modification treatment. Accordingly, the process is simplified and the cost is reduced.
摘要翻译：提供形成疏水性二氧化硅层的方法。提供基板。此后，通过使用等离子体化学气相沉积（CVD）系统在衬底上形成疏水性二氧化硅层，其中在25℃至150℃的反应温度下引入原硅酸四乙酯（TEOS）和含氧气体还提供了形成包括疏水性二氧化硅层作为栅极绝缘层的有机薄膜晶体管（OTFT）的方法。在本发明中，疏水性二氧化硅层可以直接在低温下形成，而不用常规的表面改性处理。因此，简化了过程并降低了成本。

5. 发明授权

US08178447B1 Methods of forming hydrophobic silicon dioxide layer and forming organic thin film transistor 失效
标题翻译：形成疏水二氧化硅层和形成有机薄膜晶体管的方法
公开(公告)号：US08178447B1
公开(公告)日：2012-05-15
申请号：US13006424
申请日：2011-01-14
申请人： Ching-Lin Fan , Ping-Cheng Chiu , Chang-Chih Lin
发明人： Ching-Lin Fan , Ping-Cheng Chiu , Chang-Chih Lin
IPC分类号： H01L21/31
CPC分类号： H01L21/02126 , H01L21/02274 , H01L51/0525
摘要： A method of forming a hydrophobic silicon dioxide layer is provided. A substrate is provided. Thereafter, a hydrophobic silicon dioxide layer is formed on the substrate by using a plasma chemical vapor deposition (CVD) system, in which tetraethyl orthosilicate (TEOS) and an oxygen-containing gas are introduced at a reactive temperature between 25° C. and 150° C. A method of forming an organic thin film transistor (OTFT) including the hydrophobic silicon dioxide layer as a gate insulating layer is also provided. In the present invention, the hydrophobic silicon dioxide layer can be directly formed at low temperature without using the conventional surface modification treatment. Accordingly, the process is simplified and the cost is reduced.
摘要翻译：提供了形成疏水性二氧化硅层的方法。提供基板。此后，通过使用等离子体化学气相沉积（CVD）系统在衬底上形成疏水性二氧化硅层，其中在25℃至150℃的反应温度下引入原硅酸四乙酯（TEOS）和含氧气体还提供了形成包括疏水性二氧化硅层作为栅极绝缘层的有机薄膜晶体管（OTFT）的方法。在本发明中，疏水性二氧化硅层可以直接在低温下形成，而不用常规的表面改性处理。因此，简化了过程并降低了成本。

6. 发明申请

US20110050736A1 PIXEL AND ILLUMINATING DEVICE THEREOF 审中-公开
标题翻译：像素及其照明装置
公开(公告)号：US20110050736A1
公开(公告)日：2011-03-03
申请号：US12702301
申请日：2010-02-09
申请人： Ching-Lin Fan , Yu-Sheng Lin , Bo-Sin Lin , Hsiu-Chen Chang , Yan-Wei Liu
发明人： Ching-Lin Fan , Yu-Sheng Lin , Bo-Sin Lin , Hsiu-Chen Chang , Yan-Wei Liu
IPC分类号： G06F3/038 , G09G5/10
CPC分类号： G09G3/3233 , G09G2300/0465 , G09G2300/0819 , G09G2300/0842 , G09G2300/0861 , G09G2320/0223 , G09G2320/043
摘要： A pixel and an illuminating device thereof are provided. The pixel includes an organic light emitting diode (OLED), a transistor, a first switch, a second switch and a capacitor. One end of the OLED is electrically connected to a first voltage. A first source/drain of the transistor is electrically connected to a first potential point. The first switch is electrically connected between a second source/drain of the transistor and a second potential point, and is controlled by a first driving signal. The second switch is electrically connected between the second source/drain of the transistor and a gate of the transistor, and is controlled by a second driving signal. The capacitor is electrically connected between the gate of the transistor and a data line. The first driving signal and the second driving signal are used to alternately enable/disable the first and the second switches, so as to drive the pixel.
摘要翻译：提供像素及其照明装置。像素包括有机发光二极管（OLED），晶体管，第一开关，第二开关和电容器。 OLED的一端电连接到第一电压。晶体管的第一源极/漏极电连接到第一电位点。第一开关电连接在晶体管的第二源/漏极和第二电位点之间，并由第一驱动信号控制。第二开关电连接在晶体管的第二源/漏极和晶体管的栅极之间，并由第二驱动信号控制。电容器电连接在晶体管的栅极和数据线之间。第一驱动信号和第二驱动信号用于交替地启用/禁用第一和第二开关，以驱动像素。

7. 发明授权

US08665185B2 Pixel unit of organic light emitting diode and display panel for achieving stable brightness using the same 有权
标题翻译：有机发光二极管和显示面板的像素单位用于实现稳定的亮度
公开(公告)号：US08665185B2
公开(公告)日：2014-03-04
申请号：US13092977
申请日：2011-04-25
申请人： Ching-Lin Fan , Bo-Jhang Sun
发明人： Ching-Lin Fan , Bo-Jhang Sun
IPC分类号： G09G3/30 , G09G3/10
CPC分类号： G09G3/3258 , G09G2300/043 , G09G2310/0251 , G09G2320/045
摘要： A pixel unit for driving an organic light emitting diode (OLED) is disclosed. The pixel unit includes a driving transistor, a compensating capacitor, a selecting switch module, a power switch and a configuration switch. One terminal of the compensating capacitor is coupled to a gate of the driving transistor. The selecting switch module provides the ground voltage or the compensating voltage to the other terminal of the compensating capacitor according to a first control signal. The power switch is coupled between a power voltage and a drain of the driving transistor and is controlled by a second control signal. The configuration switch receives the first control signal for controlling a connecting configuration of the driving transistor. The pixel unit is driven according to the first and the second control signals for compensating threshold voltage shifting of the OLED and the driving transistor.
摘要翻译：公开了一种用于驱动有机发光二极管（OLED）的像素单元。像素单元包括驱动晶体管，补偿电容器，选择开关模块，电源开关和配置开关。补偿电容器的一个端子耦合到驱动晶体管的栅极。选择开关模块根据第一控制信号将补偿电压或补偿电压提供给补偿电容器的另一端。电源开关耦合在驱动晶体管的电源电压和漏极之间，并由第二控制信号控制。配置开关接收用于控制驱动晶体管的连接配置的第一控制信号。根据用于补偿OLED和驱动晶体管的阈值电压偏移的第一和第二控制信号来驱动像素单元。

8. 发明申请

US20120138930A1 ORGANIC THIN FILM TRANSISTOR AND PROCESSING METHOD THEREOF 失效
标题翻译：有机薄膜晶体管及其加工方法
公开(公告)号：US20120138930A1
公开(公告)日：2012-06-07
申请号：US13076507
申请日：2011-03-31
申请人： Ching-Lin Fan , Yu-Zuo Lin , Chao-Hung Huang
发明人： Ching-Lin Fan , Yu-Zuo Lin , Chao-Hung Huang
IPC分类号： H01L51/10 , H01L51/40
CPC分类号： H01L51/0529 , H01L51/0541 , H01L51/102
摘要： An organic thin field transistor is disclosed. The organic thin field transistor includes a first and a second insulting layers, a metal structure and an organic layer serving as an active layer. Materials of the first and the second insulting layers are different, and by performing an etching process, a surface of the metal structure and a surface of the second insulting layer are effectively aligned. Because of the high flatness of the surface of the metal structure and the second insulting layer, a continuous film-forming property and crystallinity of the active layer of the organic thin field transistor are improved, so as to achieve a better the electrical characteristic.
摘要翻译：公开了一种有机薄场晶体管。有机薄场晶体管包括第一和第二绝缘层，金属结构和用作有源层的有机层。第一和第二绝缘层的材料是不同的，并且通过进行蚀刻工艺，金属结构的表面和第二绝缘层的表面被有效地对准。由于金属结构和第二绝缘层的表面的平坦度高，有机薄膜晶体管的有源层的连续成膜性和结晶度得到改善，从而获得更好的电特性。

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