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1. 发明授权

US07615773B2 Semiconductor light-emitting device and manufacturing method thereof 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US07615773B2
公开(公告)日：2009-11-10
申请号：US11647170
申请日：2006-12-29
申请人： Shih-Nan Yen , Jung-Tu Chiu , Yu-Jiun Shen , Ching-Fu Tsai
发明人： Shih-Nan Yen , Jung-Tu Chiu , Yu-Jiun Shen , Ching-Fu Tsai
IPC分类号： H01L29/06
CPC分类号： H01L33/06 , H01L33/025
摘要： A semiconductor light-emitting device comprises a substrate; and an active layer formed over the substrate comprising a well layer having an unintentionally-doped impurities; a first barrier layer; and a second barrier layer, wherein the well layer is disposed between the first barrier layer and the second barrier layer, the first barrier layer comprises an n-type-impurities-intentionally-doped portion near to the well layer, and an n-type-impurities-unintentionally-doped portion distant from the well layer; the second barrier layer comprises an n-type-impurities-unintentionally-doped portion near to the well layer.
摘要翻译：半导体发光器件包括衬底; 以及形成在所述衬底上的有源层，包括具有无意掺杂杂质的阱层; 第一阻挡层; 以及第二阻挡层，其中所述阱层设置在所述第一阻挡层和所述第二阻挡层之间，所述第一势垒层包括靠近所述阱层的n型杂质有意掺杂部分，以及n型远离阱层的非有意掺杂部分; 第二阻挡层包括靠近阱层的n型杂质无意掺杂部分。

2. 发明申请

US20120104440A1 OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：光电装置及其制造方法
公开(公告)号：US20120104440A1
公开(公告)日：2012-05-03
申请号：US13178323
申请日：2011-07-07
申请人： Wei-Chih PENG , Ta-Cheng Hsu , Yu-Jiun Shen , Ching-Fu Tsai
发明人： Wei-Chih PENG , Ta-Cheng Hsu , Yu-Jiun Shen , Ching-Fu Tsai
IPC分类号： H01L33/60 , H01L33/40
CPC分类号： H01L33/10 , H01L31/02327 , H01L31/0547 , H01L33/007 , H01L33/12 , H01L51/5268 , H01L51/5271 , H01L51/5275 , Y02E10/52
摘要： An optoelectronic device comprising, a substrate and a first transition stack formed on the substrate comprising a first transition layer formed on the substrate having a hollow component formed inside the first transition layer, a second transition layer formed on the first transition layer, and a reflector rod formed inside the second transition layer.
摘要翻译：一种光电子器件，包括：衬底和形成在衬底上的第一过渡堆叠，包括形成在衬底上的第一过渡层，其具有形成在第一过渡层内部的中空部件，形成在第一过渡层上的第二过渡层，以及反射器杆形成在第二过渡层内。

3. 发明申请

US20100278953A1 MOLD FOR IN-MOLD DECORATION 审中-公开
标题翻译：模具装饰模具
公开(公告)号：US20100278953A1
公开(公告)日：2010-11-04
申请号：US12764982
申请日：2010-04-22
申请人： Chien-Yuan Ni , Chin-Chuan Tsai , Hsin-Hsiu Tsai , Ching-Fu Tsai
发明人： Chien-Yuan Ni , Chin-Chuan Tsai , Hsin-Hsiu Tsai , Ching-Fu Tsai
IPC分类号： B29C33/30
CPC分类号： B29C45/14688 , B29C45/2602 , B29C45/2673 , B29C2045/14098
摘要： An in-mold roller mold is disclosed. The in-mold roller mold includes a first mold core, a second mold core, and a plurality of first spacing blocks. The second mold core is used for being closed with the first mold core to form a mold cavity. When the first mold core and the second core are closed, the first spacing blocks are sandwiched by the first mold core and the second mold core to maintain a first predetermined distance of the mold cavity.
摘要翻译：公开了一种模内辊模。模内辊模具包括第一模芯，第二模芯和多个第一间隔块。第二模芯用于与第一模芯封闭以形成模腔。当第一模芯和第二芯闭合时，第一间隔块被第一模芯和第二模芯夹持以保持模腔的第一预定距离。

4. 发明申请

US20070152207A1 Semiconductor light-emitting device and manufacturing method thereof 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20070152207A1
公开(公告)日：2007-07-05
申请号：US11647170
申请日：2006-12-29
申请人： Shih-Nan Yen , Jung-Tu Chiu , Yu-Jiun Shen , Ching-Fu Tsai
发明人： Shih-Nan Yen , Jung-Tu Chiu , Yu-Jiun Shen , Ching-Fu Tsai
IPC分类号： H01L31/00
CPC分类号： H01L33/06 , H01L33/025
摘要： A semiconductor light-emitting device comprises a substrate; and an active layer formed over the substrate comprising a well layer having an unintentionally-doped impurities; a first barrier layer; and a second barrier layer, wherein the well layer is disposed between the first barrier layer and the second barrier layer, the first barrier layer comprises an n-type-impurities-intentionally-doped portion near to the well layer, and an n-type-impurities-unintentionally-doped portion distant from the well layer; the second barrier layer comprises an n-type-impurities-unintentionally-doped portion near to the well layer.
摘要翻译：半导体发光器件包括衬底; 以及形成在所述衬底上的有源层，包括具有无意掺杂杂质的阱层; 第一阻挡层; 以及第二阻挡层，其中所述阱层设置在所述第一阻挡层和所述第二阻挡层之间，所述第一势垒层包括靠近所述阱层的n型杂质有意掺杂部分，以及n型远离阱层的非有意掺杂部分; 第二阻挡层包括靠近阱层的n型杂质无意掺杂部分。

5. 发明申请

US20100328930A1 Energy-saving fluorescent lamp 审中-公开
标题翻译：节能荧光灯
公开(公告)号：US20100328930A1
公开(公告)日：2010-12-30
申请号：US12458045
申请日：2009-06-30
申请人： Ming-Jung Wu , Ching-Fu Tsai
发明人： Ming-Jung Wu , Ching-Fu Tsai
IPC分类号： F21L4/00
CPC分类号： F21S9/037 , F21Y2103/00 , H05B37/00 , Y02B20/40
摘要： This invention relates to an energy-saving fluorescent lamp in which a solar energy collection unit is provided on the reflection hood of the fluorescent lamp, the solar energy collection unit being connected to a power storage unit through the circuit of a light-to-electricity converting unit, the power storage unit being capable of supplying electricity to the fluorescent lamp tube, a control unit being further provided between the power storage unit and the fluorescent lamp tube, the power storage unit being controlled by the control unit in such a manner that the power is supplied to the tube only when the power storage unit is stored with electricity, otherwise the tube being still supplied with electricity of utility power. In this manner, energy-saving effect can be achieved.
摘要翻译：本发明涉及一种节能荧光灯，其中太阳能收集单元设置在荧光灯的反射罩上，太阳能收集单元通过光电路连接到蓄电单元转换单元，所述蓄电单元能够向所述荧光灯管供电，控制单元还设置在所述蓄电单元和所述荧光灯管之间，所述蓄电单元由所述控制单元控制，使得只有当蓄电单元蓄电时，才将电源供给到管，否则管仍然供电。以这种方式，可以实现节能效果。

6. 发明授权

US08344409B2 Optoelectronic device and method for manufacturing the same 有权
公开(公告)号：US08344409B2
公开(公告)日：2013-01-01
申请号：US13178323
申请日：2011-07-07
申请人： Wei-Chih Peng , Ta-Cheng Hsu , Yu-Jiun Shen , Ching-Fu Tsai
发明人： Wei-Chih Peng , Ta-Cheng Hsu , Yu-Jiun Shen , Ching-Fu Tsai
IPC分类号： H01L33/00
CPC分类号： H01L33/10 , H01L31/02327 , H01L31/0547 , H01L33/007 , H01L33/12 , H01L51/5268 , H01L51/5271 , H01L51/5275 , Y02E10/52
摘要： An optoelectronic device comprising, a substrate and a first transition stack formed on the substrate comprising a first transition layer formed on the substrate having a hollow component formed inside the first transition layer, a second transition layer formed on the first transition layer, and a reflector rod formed inside the second transition layer.

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