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1. 发明授权

US07498185B2 Light emitting diode and method making the same 有权
标题翻译：发光二极管及方法制作相同
公开(公告)号：US07498185B2
公开(公告)日：2009-03-03
申请号：US12031508
申请日：2008-02-14
申请人： Tzong-Liang Tsai , Chih-Li Chiang , Chih-Sung Chang , Way-Jze Wen
发明人： Tzong-Liang Tsai , Chih-Li Chiang , Chih-Sung Chang , Way-Jze Wen
IPC分类号： H01L21/00
CPC分类号： H01L33/405 , H01L33/32 , H01L33/40 , H01L33/42
摘要： A light emitting diode and the method of the same are provided. The light emitting diode includes a light emitting structure and a metal reflective layer. The light emitting structure includes two semiconductor layers and an active layer. Oxide elements are added into the metal reflective layer to improve the adhesion between the reflective layer and the light emitting structure. Additionally, a transparent contact layer can be formed between the light emitting structure and the reflective layer in order to enhance the luminance efficiency.
摘要翻译：提供一种发光二极管及其制造方法。发光二极管包括发光结构和金属反射层。发光结构包括两个半导体层和有源层。将氧化物元素添加到金属反射层中以改善反射层和发光结构之间的粘附性。此外，为了提高发光效率，可以在发光结构和反射层之间形成透明接触层。

2. 发明申请

US20060186417A1 Light emitting diode and method making the same 有权
公开(公告)号：US20060186417A1
公开(公告)日：2006-08-24
申请号：US11316437
申请日：2005-12-22
申请人： Tzong-Liang Tsai , Chih-Li Chiang , Chih-Sung Chang , Way-Jze Wen
发明人： Tzong-Liang Tsai , Chih-Li Chiang , Chih-Sung Chang , Way-Jze Wen
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/32 , H01L33/40 , H01L33/42
摘要： A light emitting diode and the method of the same are provided. The light emitting diode includes a light emitting structure and a metal reflective layer. The light emitting structure includes two semiconductor layers and an active layer. Oxide elements are added into the metal reflective layer to improve the adhesion between the reflective layer and the light emitting structure. Additionally, a transparent contact layer can be formed between the light emitting structure and the reflective layer in order to enhance the luminance efficiency.

3. 发明申请

US20050093002A1 Light emitting diode device and manufacturing method 失效
标题翻译：发光二极管器件及其制造方法
公开(公告)号：US20050093002A1
公开(公告)日：2005-05-05
申请号：US10695807
申请日：2003-10-30
申请人： Tzong-Liang Tsai , Chih-Sung Chang , Chih-Li Chiang , Tzer-Perng Chen
发明人： Tzong-Liang Tsai , Chih-Sung Chang , Chih-Li Chiang , Tzer-Perng Chen
IPC分类号： H01L27/15 , H01L33/38 , H01L33/42
CPC分类号： H01L33/387 , H01L33/42
摘要： A light emitting diode device and method of manufacturing comprises a light-transmission conductive layer and a patterned transparent conductive layer. In accordance with the present invention, the light-transmission conductive layer and the patterned transparent conductive layer is spread optimal area above the LED device so as to enhance the transparency and ohmic property of LED device.
摘要翻译：发光二极管器件及其制造方法包括透光导电层和图案化的透明导电层。根据本发明，透光导电层和图案化的透明导电层在LED器件上方扩展到最佳区域，以提高LED器件的透明度和欧姆性能。

4. 发明申请

US20080188021A1 LIGHT EMITTING DIODE AND METHOD MAKING THE SAME 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：US20080188021A1
公开(公告)日：2008-08-07
申请号：US12031508
申请日：2008-02-14
申请人： Tzong-Liang Tsai , Chih-Li Chiang , Chih-Sung Chang , Way-Jze Wen
发明人： Tzong-Liang Tsai , Chih-Li Chiang , Chih-Sung Chang , Way-Jze Wen
IPC分类号： H01L21/02
CPC分类号： H01L33/405 , H01L33/32 , H01L33/40 , H01L33/42
摘要： A light emitting diode and the method of the same are provided. The light emitting diode includes a light emitting structure and a metal reflective layer. The light emitting structure includes two semiconductor layers and an active layer. Oxide elements are added into the metal reflective layer to improve the adhesion between the reflective layer and the light emitting structure. Additionally, a transparent contact layer can be formed between the light emitting structure and the reflective layer in order to enhance the luminance efficiency.
摘要翻译：提供一种发光二极管及其制造方法。发光二极管包括发光结构和金属反射层。发光结构包括两个半导体层和有源层。将氧化物元素添加到金属反射层中以改善反射层和发光结构之间的粘附性。此外，为了提高发光效率，可以在发光结构和反射层之间形成透明接触层。

5. 发明授权

US07355209B2 Light emitting diode and method making the same 有权
标题翻译：发光二极管及方法制作相同
公开(公告)号：US07355209B2
公开(公告)日：2008-04-08
申请号：US11316437
申请日：2005-12-22
申请人： Tzong-Liang Tsai , Chih-Li Chiang , Chih-Sung Chang , Way-Jze Wen
发明人： Tzong-Liang Tsai , Chih-Li Chiang , Chih-Sung Chang , Way-Jze Wen
IPC分类号： H01L27/15
CPC分类号： H01L33/405 , H01L33/32 , H01L33/40 , H01L33/42
摘要： A light emitting diode and the method of the same are provided. The light emitting diode includes a light emitting structure and a metal reflective layer. The light emitting structure includes two semiconductor layers and an active layer. Oxide elements are added into the metal reflective layer to improve the adhesion between the reflective layer and the light emitting structure. Additionally, a transparent contact layer can be formed between the light emitting structure and the reflective layer in order to enhance the luminance efficiency.
摘要翻译：提供一种发光二极管及其制造方法。发光二极管包括发光结构和金属反射层。发光结构包括两个半导体层和有源层。将氧化物元素添加到金属反射层中以改善反射层和发光结构之间的粘附性。此外，为了提高发光效率，可以在发光结构和反射层之间形成透明接触层。

6. 发明授权

US07012281B2 Light emitting diode device and manufacturing method 失效
标题翻译：发光二极管器件及其制造方法
公开(公告)号：US07012281B2
公开(公告)日：2006-03-14
申请号：US10695807
申请日：2003-10-30
申请人： Tzong-Liang Tsai , Chih-Sung Chang , Chih-Li Chiang , Tzer-Perng Chen
发明人： Tzong-Liang Tsai , Chih-Sung Chang , Chih-Li Chiang , Tzer-Perng Chen
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/387 , H01L33/42
摘要： A light emitting diode device and method of manufacturing comprises a light-transmission conductive layer and a patterned transparent conductive layer. In accordance with the present invention, the light-transmission conductive layer and the patterned transparent conductive layer is spread optimal area above the LED device so as to enhance the transparency and ohmic property of LED device.
摘要翻译：发光二极管器件及其制造方法包括透光导电层和图案化的透明导电层。根据本发明，透光导电层和图案化的透明导电层在LED器件上方扩展到最佳区域，以提高LED器件的透明度和欧姆性能。

7. 发明授权

US06429460B1 Highly luminous light emitting device 有权
标题翻译：高亮度发光装置
公开(公告)号：US06429460B1
公开(公告)日：2002-08-06
申请号：US09675341
申请日：2000-09-28
申请人： Tzer-Perng Chen , Chih-Sung Chang , Chih-Li Chiang
发明人： Tzer-Perng Chen , Chih-Sung Chang , Chih-Li Chiang
IPC分类号： H01L2715
CPC分类号： H01L33/22 , H01L33/0079 , H01L33/145
摘要： The present invention discloses a light emitting device which includes a substrate, a light emitting layer on the substrate, a current restriction layer on the light emitting layer, a current spreading layer on the current restriction layer, a dielectric layer on the current spreading layer defining an exposed area, a top ohmic contact metal layer on the exposed area, and a bottom ohmic contact metal layer under the substrate. The current spreading layer has a rough top surface. The current restriction layer includes a conductive layer that allows current to flow through, and an insulating layer around the conductive layer. The insulating layer prohibits the current from flowing through in a path between the top ohmic contact metal layer and the bottom ohmic contact metal layer. The substrate is partially removed to form a cavity for avoiding substrate absorption. A highly luminous light emitting device is obtained by introductions of the rough top surface of the current spreading layer, partial removal of the substrate, the current restriction layer, and optimal layouts of the top and bottom ohmic contact metal layers and the conductive layer.
摘要翻译：本发明公开了一种发光器件，其包括衬底，衬底上的发光层，发光层上的电流限制层，电流限制层上的电流扩展层，电流扩展层上的介电层，限定暴露区域，暴露区域上的顶部欧姆接触金属层，以及底部下方的欧姆接触金属层。电流扩散层具有粗糙的顶表面。电流限制层包括允许电流流过的导电层和导电层周围的绝缘层。绝缘层禁止电流在顶部欧姆接触金属层和底部欧姆接触金属层之间的路径中流过。部分地去除衬底以形成用于避免衬底吸收的空腔。通过引入电流扩展层的粗糙顶表面，部分去除衬底，电流限制层以及顶部和底部欧姆接触金属层和导电层的最佳布局来获得高度发光的发光器件。

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