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1. 发明申请

US20090061580A1 METHOD OF FORMING FINFET DEVICE 有权
标题翻译：形成FINFET器件的方法
公开(公告)号：US20090061580A1
公开(公告)日：2009-03-05
申请号：US12030210
申请日：2008-02-13
申请人： Chih-Hao Cheng , Tzung-Han Lee
发明人： Chih-Hao Cheng , Tzung-Han Lee
IPC分类号： H01L21/8242
CPC分类号： H01L29/66795 , H01L27/10876 , H01L27/10879
摘要： The invention discloses a method of forming a finFET device. A hard mask layer is formed on an active area of a semiconductor substrate. A portion of the hard mask layer is etched to form a recess. A conformal gate defining layer is deposited on the recess and a tilt angle ion implantation process is performed. A part of the gate defining layer is removed to define a fin pattern. The fin pattern is subsequently transferred to the hard mask layer. The patterned hard mask layer having the fin pattern is utilized as an etching mask, and the semiconductor substrate is etched to form a fin structure.
摘要翻译：本发明公开了一种形成finFET器件的方法。在半导体衬底的有源区上形成硬掩模层。硬掩模层的一部分被蚀刻以形成凹部。在凹槽上沉积保形栅极限定层，并执行倾斜角度离子注入工艺。去除栅极限定层的一部分以限定鳍状图案。翅片图案随后转移到硬掩模层。将具有翅片图案的图案化的硬掩模层用作蚀刻掩模，并且蚀刻半导体衬底以形成翅片结构。

2. 发明申请

US20090001513A1 Semiconductor structure 有权
公开(公告)号：US20090001513A1
公开(公告)日：2009-01-01
申请号：US11949047
申请日：2007-12-03
申请人： Tzung-Han Lee , Chih-Hao Cheng , Chung-Yuan Lee
发明人： Tzung-Han Lee , Chih-Hao Cheng , Chung-Yuan Lee
IPC分类号： H01L29/92
CPC分类号： H01L27/10891 , H01L27/10876
摘要： The present invention discloses a structure of a buried word line, which comprises a semiconductor substrate having a U-shape trench, a U-shape gate dielectric layer in the U-shape trench, a polysilicon layer on the U-shape gate dielectric layer, a conducting layer on the polysilicon layer, and a cover dielectric layer on the conducting layer. The semiconductor structure may have a minimized size and when recess channels are formed thereby, the integration is accordingly improved without suffering from the short channel effect.

3. 发明申请

US20090001457A1 Semiconductor structure 审中-公开
标题翻译：半导体结构
公开(公告)号：US20090001457A1
公开(公告)日：2009-01-01
申请号：US11949048
申请日：2007-12-03
申请人： Tzung-Han Lee , Chih-Hao Cheng , Chung-Yuan Lee
发明人： Tzung-Han Lee , Chih-Hao Cheng , Chung-Yuan Lee
IPC分类号： H01L29/78
CPC分类号： H01L27/10891 , H01L27/10876
摘要： The present invention discloses a semiconductor structure comprising a semiconductor substrate having a U-shape trench, a U-shape gate dielectric layer on the U-shape trench, a U-shape gate region on the U-shape gate dielectric layer, a conducting matter in the U-shape gate region, and a cover dielectric layer on the conducting matter. The semiconductor structure may have a minimized size and when recess channels are formed thereby, the integration is accordingly improved without suffering from the short channel effect.
摘要翻译：本发明公开了一种半导体结构，其包括具有U形沟槽的半导体衬底，U形沟槽上的U形栅极电介质层，U形栅极电介质层上的U形栅极区域，导电材料在U形栅极区域和导电材料上的覆盖电介质层。半导体结构可以具有最小化的尺寸，并且当由此形成凹槽时，相应地提高了积分，而不会受到短沟道效应的影响。

4. 发明申请

US20080277709A1 DRAM STRUCTURE 审中-公开
标题翻译： DRAM结构
公开(公告)号：US20080277709A1
公开(公告)日：2008-11-13
申请号：US11872034
申请日：2007-10-14
申请人： Tzung-Han Lee , Chih-Hao Cheng , Te-Yin Chen , Chung-Yuan Lee
发明人： Tzung-Han Lee , Chih-Hao Cheng , Te-Yin Chen , Chung-Yuan Lee
IPC分类号： H01L27/108
CPC分类号： H01L27/10876 , H01L27/10867
摘要： A DRAM structure includes a substrate, a MOS transistor, a deep trench capacitor, a surface strap positioned on the surface of the substrate and interconnecting a drain of the MOS transistor and an electrode of the deep trench capacitor, wherein the sidewall and the top surface of the surface strap are covered with an insulating layer. A passing gate is positioned on the insulating layer.
摘要翻译： DRAM结构包括衬底，MOS晶体管，深沟槽电容器，位于衬底表面上的表面带，并将MOS晶体管的漏极和深沟槽电容器的电极互连，其中侧壁和顶表面的表面带被绝缘层覆盖。通孔位于绝缘层上。

5. 发明申请

US20090008691A1 DRAM STRUCTURE AND METHOD OF MAKING THE SAME 有权
标题翻译： DRAM结构及其制作方法
公开(公告)号：US20090008691A1
公开(公告)日：2009-01-08
申请号：US11965769
申请日：2007-12-28
申请人： Tzung-Han Lee , Chih-Hao Cheng , Te-Yin Chen , Chung-Yuan Lee , En-Jui Li
发明人： Tzung-Han Lee , Chih-Hao Cheng , Te-Yin Chen , Chung-Yuan Lee , En-Jui Li
IPC分类号： H01L27/108
CPC分类号： H01L29/66621 , H01L27/10823 , H01L27/10829 , H01L27/10876 , H01L29/4236
摘要： A DRAM structure has a substrate, a buried transistor with a fin structure, a trench capacitor, and a surface strap on the surface of the substrate. The surface strap is used to electrically connect a drain region to the trench capacitor.
摘要翻译： DRAM结构具有衬底，具有翅片结构的埋入晶体管，沟槽电容器和衬底表面上的表面带。表面带用于将漏极区域电连接到沟槽电容器。

6. 发明申请

US20080318377A1 METHOD OF FORMING SELF-ALIGNED GATES AND TRANSISTORS 审中-公开
标题翻译：形成自对准栅和晶体管的方法
公开(公告)号：US20080318377A1
公开(公告)日：2008-12-25
申请号：US11964720
申请日：2007-12-27
申请人： Tzung-Han Lee , Chih-Hao Cheng , Pei-Tzu Lee , Te-Yin Chen , Chung-Yuan Lee
发明人： Tzung-Han Lee , Chih-Hao Cheng , Pei-Tzu Lee , Te-Yin Chen , Chung-Yuan Lee
IPC分类号： H01L21/8242
CPC分类号： H01L27/10876 , H01L27/0207 , H01L27/10879 , H01L29/66787 , H01L29/7851
摘要： Method for fabricating a self-aligned gate of a transistor including: forming a plurality of deep trench capacitors in a substrate, concurrently forming a surface strap and a contact pad on a surface of the substrate, wherein a spacing between the surface strap and the contact pad exposes a portion of an active area, filling the spacing with a dielectric layer, forming a photoresist pattern on the substrate, wherein the photoresist has an opening situated directly above the spacing between the surface strap and the contact pad, etching away the dielectric layer and a portion of a shallow trench isolation region through the opening thereby forming an upwardly protruding fin-typed channel structure, forming a gate dielectric layer on the upwardly protruding fin-typed channel structure, and forming a gate on the gate dielectric layer.
摘要翻译：一种用于制造晶体管的自对准栅极的方法，包括：在衬底中形成多个深沟槽电容器，同时在衬底的表面上形成表面带和接触焊盘，其中表面带和触点之间的间隔衬垫暴露有源区的一部分，用介电层填充间隔，在衬底上形成光致抗蚀剂图案，其中光致抗蚀剂具有位于表面带和接触垫之间的间隔正上方的开口，蚀刻掉介电层以及通过开口的浅沟槽隔离区域的一部分，从而形成向上突出的鳍状沟道结构，在向上突出的鳍状沟道结构上形成栅极电介质层，并在栅极电介质层上形成栅极。

7. 发明授权

US07633109B2 DRAM structure and method of making the same 有权
标题翻译： DRAM结构和制作方法
公开(公告)号：US07633109B2
公开(公告)日：2009-12-15
申请号：US11965769
申请日：2007-12-28
申请人： Tzung-Han Lee , Chih-Hao Cheng , Te-Yin Chen , Chung-Yuan Lee , En-Jui Li
发明人： Tzung-Han Lee , Chih-Hao Cheng , Te-Yin Chen , Chung-Yuan Lee , En-Jui Li
IPC分类号： H01L27/108 , H01L29/76
CPC分类号： H01L29/66621 , H01L27/10823 , H01L27/10829 , H01L27/10876 , H01L29/4236
摘要： A DRAM structure has a substrate, a buried transistor with a fin structure, a trench capacitor, and a surface strap on the surface of the substrate. The surface strap is used to electrically connect a drain region to the trench capacitor.
摘要翻译： DRAM结构具有衬底，具有翅片结构的埋入晶体管，沟槽电容器和衬底表面上的表面带。表面带用于将漏极区域电连接到沟槽电容器。

8. 发明授权

US07615443B2 Method of forming finFET device 有权
标题翻译：形成finFET器件的方法
公开(公告)号：US07615443B2
公开(公告)日：2009-11-10
申请号：US12030210
申请日：2008-02-13
申请人： Chih-Hao Cheng , Tzung-Han Lee
发明人： Chih-Hao Cheng , Tzung-Han Lee
IPC分类号： H01L21/8242
CPC分类号： H01L29/66795 , H01L27/10876 , H01L27/10879
摘要： The invention discloses a method of forming a finFET device. A hard mask layer is formed on an active area of a semiconductor substrate. A portion of the hard mask layer is etched to form a recess. A conformal gate defining layer is deposited on the recess and a tilt angle ion implantation process is performed. A part of the gate defining layer is removed to define a fin pattern. The fin pattern is subsequently transferred to the hard mask layer. The patterned hard mask layer having the fin pattern is utilized as an etching mask, and the semiconductor substrate is etched to form a fin structure.
摘要翻译：本发明公开了一种形成finFET器件的方法。在半导体衬底的有源区上形成硬掩模层。硬掩模层的一部分被蚀刻以形成凹部。在凹槽上沉积保形栅极限定层，并执行倾斜角度离子注入工艺。去除栅极限定层的一部分以限定鳍状图案。翅片图案随后转移到硬掩模层。将具有翅片图案的图案化的硬掩模层用作蚀刻掩模，并且蚀刻半导体衬底以形成翅片结构。

9. 发明申请

US20080256353A1 Method and Apparatus for Hiding Information in Communication protocol 审中-公开
标题翻译：用于隐藏通信协议信息的方法和装置
公开(公告)号：US20080256353A1
公开(公告)日：2008-10-16
申请号：US11839516
申请日：2007-08-15
申请人： Ting-Kai Hung , Jian-Chih Liao , Tsai-Yuan Hsu , Chih-Hao Cheng , Ken-Li Chen
发明人： Ting-Kai Hung , Jian-Chih Liao , Tsai-Yuan Hsu , Chih-Hao Cheng , Ken-Li Chen
IPC分类号： H04L9/28 , G06F15/16 , H04K1/00 , H04L9/00
CPC分类号： H04L63/0428
摘要： A method and apparatus for hiding information in a communication protocol signal are disclosed. The apparatus comprises a bit selection unit, an information encoding unit and an information decoding unit, wherein the bit selection unit selects suitable bits in the signal for hiding information, the information encoding unit encodes the information into the suitable bits selected by the bit selection unit, and the information decoding unit decodes the information encoded in the suitable bits.
摘要翻译：公开了一种在通信协议信号中隐藏信息的方法和装置。该装置包括比特选择单元，信息编码单元和信息解码单元，其中比特选择单元选择隐藏信息的信号中的适当比特，信息编码单元将该信息编码成由比特选择单元选择的合适比特并且信息解码单元对以适当比特编码的信息进行解码。

10. 发明申请

US20100113929A1 High-frequency ultrasonic imaging system and method 审中-公开
标题翻译：高频超声成像系统及方法
公开(公告)号：US20100113929A1
公开(公告)日：2010-05-06
申请号：US12289634
申请日：2008-10-31
申请人： Chih Kuang Yeh , Chih Hao Cheng , Chao Hung Chung
发明人： Chih Kuang Yeh , Chih Hao Cheng , Chao Hung Chung
IPC分类号： A61B8/14
CPC分类号： A61B8/08 , A61B8/06 , A61B8/14 , A61B8/4461
摘要： Since high-frequency ultrasound provides the advantage of high spatial resolution, it has been applied to relevant fields of medical imaging research. Due to a lack of high-frequency ultrasonic transducer with array structure, the high-frequency ultrasonic transducer must be performed in a fixed depth of focus during scanning. A swept scanning method is typical for flow estimation. However, this method cannot provide the precise flow estimation within the irregular-shaped object, because the focal zone of the above-mentioned transducer just covers a specific depth of focus and the outside the focal area corresponds poor signal to noise ratio. To resolve this problem, the present invention provides a skin scanning method, which can move the transducer along a scanning route parallel to the contour of the irregular-shaped object during scanning. The scanning results show that the skin scanning method improves the accuracy of flow estimation.
摘要翻译：由于高频超声波具有高空间分辨率的优点，因此已被应用于医学影像学研究的相关领域。由于缺乏具有阵列结构的高频超声波换能器，高频超声波换能器必须在扫描期间以固定的焦深进行。扫描扫描方法是流量估计的典型。然而，该方法不能在不规则形状的物体内提供精确的流动估计，因为上述传感器的聚焦区域仅覆盖特定的深度焦点，并且焦点区域的外部对应于较差的信噪比。为了解决这个问题，本发明提供一种皮肤扫描方法，其可以在扫描期间沿着与不规则形状物体的轮廓平行的扫描路线移动换能器。扫描结果表明，皮肤扫描方法提高了流量估计的准确性。

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