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1. 发明授权

US08103821B2 Flash memory device with wear-leveling mechanism and controlling method thereof 有权
标题翻译：具有磨损平衡机构的闪存装置及其控制方法
公开(公告)号：US08103821B2
公开(公告)日：2012-01-24
申请号：US12396547
申请日：2009-03-03
申请人： Li-Pin Chang , Ming-Dar Chen , Chien-Ting Huang
发明人： Li-Pin Chang , Ming-Dar Chen , Chien-Ting Huang
IPC分类号： G06F12/02
CPC分类号： G06F12/0246 , G06F2212/7211
摘要： A flash memory device with a wear-leveling mechanism includes at least one flash memory, a hot list, a bitmap, a source pointer, and a controller. The controller obtains a physical memory block with high erase count through the hot list, an erase count of the physical memory block, and an overall average erase count of the flash memory device. The controller further finds out a physical memory block which stores static data through managing the bitmap and the source pointer. The controller moves the static data to the physical memory block with high erase count, and releases the physical memory block which stores the static data to avoid the physical memory block with high erase count being worn down increasingly more seriously.
摘要翻译：具有磨损均衡机构的闪存装置包括至少一个闪存，热列表，位图，源指针和控制器。控制器通过热列表获得具有高擦除次数的物理存储器块，物理存储块的擦除计数和闪存器件的总平均擦除次数。控制器还通过管理位图和源指针找出存储静态数据的物理存储块。控制器将静态数据移动到具有高擦除次数的物理存储块，并释放存储静态数据的物理存储块，以避免高擦除次数的物理存储块越来越严重。

2. 发明申请

US20100115186A1 FLASH MEMORY DEVICE WITH WEAR-LEVELING MECHANISM AND CONTROLLING METHOD THEREOF 有权
标题翻译：具有磨损机构的闪存存储器件及其控制方法
公开(公告)号：US20100115186A1
公开(公告)日：2010-05-06
申请号：US12396547
申请日：2009-03-03
申请人： Li-Pin Chang , Ming-Dar Chen , Chien-Ting Huang
发明人： Li-Pin Chang , Ming-Dar Chen , Chien-Ting Huang
IPC分类号： G06F12/02 , G06F12/00
CPC分类号： G06F12/0246 , G06F2212/7211
摘要： A flash memory device with a wear-levelining mechanism includes at least one flash memory, a hot list, a bitmap, a source pointer, and a controller. The controller obtains a physical memory block with high erase count through the hot list, an erase count of the physical memory block, and an overall average erase count of the flash memory device. The controller further finds out a physical memory block which stores static data through managing the bitmap and the source pointer. The controller moves the static data to the physical memory block with high erase count, and releases the physical memory block which stores the static data to avoid the physical memory block with high erase count being worn down increasingly more seriously.
摘要翻译：具有磨损平整机构的闪存设备包括至少一个闪存，热列表，位图，源指针和控制器。控制器通过热列表获得具有高擦除次数的物理存储器块，物理存储块的擦除计数和闪存器件的总平均擦除次数。控制器还通过管理位图和源指针找出存储静态数据的物理存储块。控制器将静态数据移动到具有高擦除次数的物理存储块，并释放存储静态数据的物理存储块，以避免高擦除次数的物理存储块越来越严重。

3. 发明授权

US09570162B2 Data read method for flash memory 有权
标题翻译： Flash存储器的数据读取方法
公开(公告)号：US09570162B2
公开(公告)日：2017-02-14
申请号：US13075053
申请日：2011-03-29
申请人： Chien-Ting Huang
发明人： Chien-Ting Huang
IPC分类号： G11C29/00 , G11C11/56 , G11C5/04 , G11C16/34
CPC分类号： G11C11/5642 , G11C5/04 , G11C16/34
摘要： The invention provides a data read method. In one embodiment, a flash memory comprises a plurality of pages, and predetermined information is written into each of the pages of the flash memory. First, a target address of the flash memory is read according to a source read voltage to obtain source data and a source error correction code. When error bits of the source data cannot be corrected according to the source error correction code, the predetermined information corresponding to the source data is read from the flash memory according to the source read voltage to obtain correction information. The source data and the source error correction code are then amended according to the difference between the predetermined information and the correction information to obtain an amended data and an amended error correction code. Error bits of the amended data are then corrected according to the amended error correction code.
摘要翻译：本发明提供一种数据读取方法。在一个实施例中，闪速存储器包括多个页面，并且将预定信息写入闪速存储器的每个页面。首先，根据源读取电压读取闪存的目标地址，以获得源数据和源纠错码。当根据源错误校正码不能校正源数据的错误位时，根据源读取电压从闪速存储器读取与源数据相对应的预定信息，以获得校正信息。然后根据预定信息和校正信息之间的差异来修改源数据和源纠错码，以获得修正数据和修正的纠错码。然后根据修正的纠错码更正修正数据的错误位。

4. 发明授权

US08909846B2 Memory storage device and control method thereof 有权
标题翻译：内存存储装置及其控制方法
公开(公告)号：US08909846B2
公开(公告)日：2014-12-09
申请号：US12320141
申请日：2009-01-21
申请人： Li-Pin Chang , Ming-Dar Chen , Chien-Ting Huang
发明人： Li-Pin Chang , Ming-Dar Chen , Chien-Ting Huang
IPC分类号： G06F12/02
CPC分类号： G06F12/0246 , G06F2212/7211
摘要： A control method of a memory storage device for writing an updated data from a host to the memory storage device is provided. The memory storage device provides storage space which is divided into a plurality of physical blocks to access the updated data. The control method includes the following steps: first, determining whether the updated data is a hot data or not; finally, storing the less updated data which is not the hot data into the physical block which has the higher erase counts according to the result of above determination.
摘要翻译：提供了一种用于将更新的数据从主机写入存储器存储装置的存储器存储装置的控制方法。存储器存储设备提供存储空间，其被划分为多个物理块以访问更新的数据。该控制方法包括以下步骤：首先，确定更新的数据是否为热数据; 最后，根据上述确定的结果，将不是热数据的较少更新的数据存储到具有较高擦除次数的物理块中。

5. 发明申请

US20110179306A1 Data Read Method for Flash Memory 有权
标题翻译： Flash存储器的数据读取方法
公开(公告)号：US20110179306A1
公开(公告)日：2011-07-21
申请号：US13075053
申请日：2011-03-29
申请人： Chien-Ting Huang
发明人： Chien-Ting Huang
IPC分类号： G06F11/16
CPC分类号： G11C11/5642 , G11C5/04 , G11C16/34
摘要： The invention provides a data read method. In one embodiment, a flash memory comprises a plurality of pages, and predetermined information is written into each of the pages of the flash memory. First, a target address of the flash memory is read according to a source read voltage to obtain source data and a source error correction code. When error bits of the source data cannot be corrected according to the source error correction code, the predetermined information corresponding to the source data is read from the flash memory according to the source read voltage to obtain correction information. The source data and the source error correction code are then amended according to the difference between the predetermined information and the correction information to obtain an amended data and an amended error correction code. Error bits of the amended data are then corrected according to the amended error correction code.
摘要翻译：本发明提供一种数据读取方法。在一个实施例中，闪速存储器包括多个页面，并且将预定信息写入闪速存储器的每个页面。首先，根据源读取电压读取闪存的目标地址，以获得源数据和源纠错码。当根据源错误校正码不能校正源数据的错误位时，根据源读取电压从闪速存储器读取与源数据对应的预定信息，以获得校正信息。然后根据预定信息和校正信息之间的差异来修改源数据和源纠错码，以获得修正数据和修正的纠错码。然后根据修正的纠错码更正修正数据的错误位。

6. 发明申请

US20100017555A1 Memory storage device and control method thereof 有权
标题翻译：内存存储装置及其控制方法
公开(公告)号：US20100017555A1
公开(公告)日：2010-01-21
申请号：US12320141
申请日：2009-01-21
申请人： Li-Pin Chang , Ming-Dar Chen , Chien-Ting Huang
发明人： Li-Pin Chang , Ming-Dar Chen , Chien-Ting Huang
IPC分类号： G06F12/02 , G06F12/00
CPC分类号： G06F12/0246 , G06F2212/7211
摘要： A control method of a memory storage device for writing an updated data from a host to the memory storage device is provided. The memory storage device provides storage space which is divided into a plurality of physical blocks to access the updated data. The control method includes the following steps: first, determining whether the updated data is a hot data or not; finally, storing the less updated data which is not the hot data into the physical block which has the higher erase counts according to the result of above determination.
摘要翻译：提供了一种用于将更新的数据从主机写入存储器存储装置的存储器存储装置的控制方法。存储器存储设备提供存储空间，其被划分为多个物理块以访问更新的数据。该控制方法包括以下步骤：首先，确定更新的数据是否为热数据; 最后，根据上述确定的结果，将不是热数据的较少更新的数据存储到具有较高擦除次数的物理块中。

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