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1. 发明授权

US08441029B2 Light emitting element including side surface dielectric layer for avoiding impurity adhesion 有权
标题翻译：发光元件包括用于避免杂质附着的侧表面电介质层
公开(公告)号：US08441029B2
公开(公告)日：2013-05-14
申请号：US13011592
申请日：2011-01-21
申请人： Chiaki Sasaoka
发明人： Chiaki Sasaoka
IPC分类号： H01L33/00
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/0282 , H01S5/34333
摘要： To suppress adhesion of impurities to a semiconductor light emitting element, there is provided a nitride-based semiconductor light emitting element including: a laminated body having a first cladding layer, an active layer formed over the first cladding layer, and a second cladding layer formed over the active layer; and a dielectric film with a thickness of 3 μm or more that is formed on the side surface of the laminated body on the side where light is emitted and that covers at least a first side surface of the active layer.
摘要翻译：为了抑制杂质对半导体发光元件的粘附，提供了一种氮化物系半导体发光元件，其包括：层叠体，具有第一包层，形成在第一包层上的有源层和形成的第二包层在活动层上; 以及形成在层叠体的发光侧的侧面上并且覆盖有源层的至少第一侧面的厚度为3μm以上的电介质膜。

2. 发明授权

US07741654B2 Group III nitride semiconductor optical device 有权
标题翻译： III族氮化物半导体光学器件
公开(公告)号：US07741654B2
公开(公告)日：2010-06-22
申请号：US11575387
申请日：2005-09-15
申请人： Kazuhisa Fukuda , Chiaki Sasaoka , Akitaka Kimura
发明人： Kazuhisa Fukuda , Chiaki Sasaoka , Akitaka Kimura
IPC分类号： H01L29/12 , H01L31/00 , H01L33/00
CPC分类号： H01S5/32341 , H01S5/223
摘要： The present invention provides a semiconductor laser excellent in the current injection efficiency. In an inner stripe type semiconductor laser according to the present invention, a p type cladding layer 309 has a superlattice structure composed of GaN layers and Al0.1Ga0.9N layers, which are alternately layered on each other. The p type cladding layer 309 has a portion of high dislocation density and a portion of low dislocation density. That is, the dislocation density is relatively low in a region directly above an opening of the current-confining region 308, whereas the dislocation density is relatively high in a region directly above a current-confining region 308.
摘要翻译：本发明提供一种电流注入效率优异的半导体激光器。在根据本发明的内条型半导体激光器中，p型包层309具有彼此交替层叠的由GaN层和Al 0.1 Ga 0.9 N层构成的超晶格结构。 p型覆层309具有高位错密度的一部分和低位错密度的一部分。也就是说，在电流限制区域308的开口正上方的区域中的位错密度相对较低，而位于电流限制区域308正上方的位置的位错密度相对较高。

3. 发明授权

US07760785B2 Group-III nitride semiconductor device 有权
标题翻译： III族氮化物半导体器件
公开(公告)号：US07760785B2
公开(公告)日：2010-07-20
申请号：US10991544
申请日：2004-11-19
申请人： Chiaki Sasaoka
发明人： Chiaki Sasaoka
IPC分类号： H01S5/343 , H01L33/14
CPC分类号： H01L21/30612 , H01L21/02389 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L33/145 , H01S5/2206 , H01S5/32341 , H01S2304/00
摘要： A method of forming a partially etched nitride-based compound semiconductor crystal layer includes the following steps. A non-crystal layer of a nitride-based compound semiconductor is formed. At least a part of the non-crystal layer is then etched to form a partially etched non-crystal layer before the partially etched non-crystal layer is crystallized to form a partially etched nitride-based compound semiconductor crystal layer.
摘要翻译：形成部分蚀刻的氮化物系化合物半导体晶体层的方法包括以下步骤。形成氮化物系化合物半导体的非晶层。然后在部分蚀刻的非晶层结晶以形成部分蚀刻的氮化物基化合物半导体晶体层之前，至少一部分非晶层被蚀刻以形成部分蚀刻的非晶层。

4. 发明申请

US20080063020A1 Group III Nitride Semiconductor Optical Device Group III Nitride Semiconductor Optical Device 有权
标题翻译： III族氮化物半导体光器件
公开(公告)号：US20080063020A1
公开(公告)日：2008-03-13
申请号：US11575387
申请日：2005-09-15
申请人： Kazuhisa Fukuda , Chiaki Sasaoka , Akitaka Kimura
发明人： Kazuhisa Fukuda , Chiaki Sasaoka , Akitaka Kimura
IPC分类号： H01S5/323
CPC分类号： H01S5/32341 , H01S5/223
摘要： The present invention provides a semiconductor laser excellent in the current injection efficiency. In an inner stripe type semiconductor laser according to the present invention, a p type cladding layer 309 has a superlattice structure composed of GaN layers and Al0.1Ga0.9N layers, which are alternately layered on each other. The p type cladding layer 309 has a portion of high dislocation density and a portion of low dislocation density. That is, the dislocation density is relatively low in a region directly above an opening of the current-confining region 308, whereas the dislocation density is relatively high in a region directly above a current-confining region 308.
摘要翻译：本发明提供一种电流注入效率优异的半导体激光器。在根据本发明的内条型半导体激光器中，ap型包覆层309具有由GaN层和Al 0.1 Ga 0.9 N层组成的超晶格结构，交替层叠在一起。 p型覆层309具有高位错密度的一部分和低位错密度的一部分。也就是说，在电流限制区域308的开口正上方的区域中的位错密度相对较低，而位于电流限制区域308正上方的位置的位错密度相对较高。

5. 发明申请

US20060051939A1 Nitride semiconductor substrate and nitride semiconductor device using same 审中-公开
标题翻译：氮化物半导体衬底和使用其的氮化物半导体器件
公开(公告)号：US20060051939A1
公开(公告)日：2006-03-09
申请号：US10537611
申请日：2004-08-30
申请人： Masaru Kuramoto , Chiaki Sasaoka , Masahige Matsudate
发明人： Masaru Kuramoto , Chiaki Sasaoka , Masahige Matsudate
IPC分类号： H01L21/20
CPC分类号： H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02639 , H01L33/0075 , H01S5/323 , H01S5/32341
摘要： Polycrystalline AlN 3 is deposited on the surface of an SiO2 film (2) by a sputtering method, and a mask is formed. An Si-doped n-GaN layer 5 is then formed over the mask thus formed. Subsequently, an n-type cladding layer (6), which is formed from Si-doped n-type Al0.1Ga0.9N (silicon concentration 4×1017 cm−3, thickness 1.2 μm), an n-type light-trapping layer (7), which is formed from Si-doped n-type GaN, a multiple quantum well layer (8), which is formed from an In0.2Ga0.8N well layer and an Si-doped In0.05Ga0.95N barrier layer, a cap layer (9), which is formed from Mg-doped p-type Al0.2Ga0.8N, a p-type light-trapping layer (10), which is formed from Mg-doped p-type GaN, a p-type cladding layer (11), which is formed from Mg-doped p-type Al0.1Ga0.9N, and a p-type contact layer (12), which is formed from Mg-doped p-type GaN, are grown in sequence to form an LD layer structure.
摘要翻译：通过溅射法将多晶AlN 3沉积在SiO 2膜（2）的表面上，形成掩模。然后在由此形成的掩模上形成Si掺杂的n-GaN层5。随后，由Si掺杂的n型Al 0.1 Ga 0.9 N（硅浓度4×10 17）形成的n型覆层（6），厚度1.2μm），由Si掺杂的n型GaN形成的n型光俘获层（7），多量子阱层（8 ），其由In 0.2 N 2 Ga 0.8 N阱层和Si掺杂的In 0.05 N Ga 0.95 N / N阻挡层，由Mg掺杂的p型Al 0.2 Ga 0.8 N形成的覆盖层（9），p型光俘获层（10），其由Mg掺杂的p型GaN形成，p型覆层（11），其由掺杂Mg的p型Al 0.1 Ga 0.9形成 N和由Mg掺杂的p型GaN形成的p型接触层（12）依次生长以形成LD层结构。

6. 发明授权

US06284042B1 Method of growing nitride crystal of group III element 失效
标题翻译：生长III族元素氮化物晶体的方法
公开(公告)号：US06284042B1
公开(公告)日：2001-09-04
申请号：US09605742
申请日：2000-06-29
申请人： Chiaki Sasaoka
发明人： Chiaki Sasaoka
IPC分类号： C30B2502
CPC分类号： C30B25/02 , C23C16/303 , C30B29/403 , C30B29/406
摘要： A MOVPE method is provided that makes it possible to grow a high-quality nitride crystal of a group III element. The method comprises the steps (a) to (d). In the step (a), an organometallic compound in a gas phase is supplied to a reaction chamber as a group III component material by a carrier gas. In the step (b), a nitrogen compound in a gas phase is supplied to the chamber as a group V component material by the carrier gas. In the step (c), a hydrocarbon in a gas phase is supplied to the chamber by the carrier gas. In the step (d), the organometallic compound and the nitrogen compound are reacted with each other in a atmosphere containing the hydrocarbon in the chamber to grow a nitride crystal of a group III element on a crystalline substrate. As the hydrocarbon, any hydrocarbon containing at least one carbon-to-carbon (i.e., C—C) bond in its molecule (i.e., alkanes) may be used. Preferably, any hydrocarbon containing at least one double or triple carbon-to-carbon bond (i.e., C═C or C≡C) in its molecule (i.e., alkens or alkynes) is additionally supplied to the chamber. A step of supplying a p- or n-type dopant material to the chamber may be added, in which the nitride crystal exhibits the p- or n-type conductivity.
摘要翻译：提供了一种MOVPE方法，其可以生长III族元素的高质量氮化物晶体。该方法包括步骤（a）至（d）。在步骤（a）中，气相中的有机金属化合物作为III族组分材料通过载气供给到反应室。在步骤（b）中，气相中的氮化合物作为V族组分材料通过载气供给到室。在步骤（c）中，通过载气将气相中的烃供给室。在步骤（d）中，有机金属化合物和氮化合物在室内含有烃的气氛中相互反应，以在晶体衬底上生长III族元素的氮化物晶体。作为烃，可以使用在其分子中含有至少一个碳 - 碳（即C-C）键的任何烃（即烷烃）。优选地，在其分子中含有至少一个双重或三重碳 - 碳键（即C = C或C = C）的烃（即，烯烃或炔烃）另外提供给该室。可以添加向腔室供给p型或n型掺杂剂材料的步骤，其中氮化物晶体呈现p型或n型导电性。

7. 发明申请

US20110180838A1 NITRIDE-BASED SEMICONDUCTOR LIGHT EMITTING ELEMENT AND LIGHT EMITTING DEVICE IN WHICH THE NITRIDE-BASED SEMICONDUCTOR LIGHT EMITTING ELEMENT IS MOUNTED IN PACKAGE 有权
标题翻译：基于氮化物的半导体发光元件和发光器件，其中基于氮化物的半导体发光元件被安装在封装中
公开(公告)号：US20110180838A1
公开(公告)日：2011-07-28
申请号：US13011592
申请日：2011-01-21
申请人： Chiaki SASAOKA
发明人： Chiaki SASAOKA
IPC分类号： H01L33/62 , H01L33/26
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/0282 , H01S5/34333
摘要： To suppress adhesion of impurities to a semiconductor light emitting element, there is provided a nitride-based semiconductor light emitting element including: a laminated body having a first cladding layer, an active layer formed over the first cladding layer, and a second cladding layer formed over the active layer; and a dielectric film with a thickness of 3 μm or more that is formed on the side surface of the laminated body on the side where light is emitted and that covers at least a first side surface of the active layer.
摘要翻译：为了抑制杂质对半导体发光元件的粘附，提供了一种氮化物系半导体发光元件，其包括：层叠体，具有第一包层，形成在第一包层上的有源层和形成的第二包层在活动层上; 以及形成在层叠体的发光侧的侧面上并且覆盖有源层的至少第一侧面的厚度为3μm以上的电介质膜。

8. 发明授权

US06841410B2 Method for forming group-III nitride semiconductor layer and group-III nitride semiconductor device 有权
标题翻译：用于形成III族氮化物半导体层和III族氮化物半导体器件的方法
公开(公告)号：US06841410B2
公开(公告)日：2005-01-11
申请号：US10231163
申请日：2002-08-30
申请人： Chiaki Sasaoka
发明人： Chiaki Sasaoka
IPC分类号： H01L21/205 , B82Y10/00 , B82Y20/00 , B82Y40/00 , H01L21/20 , H01L21/306 , H01L21/338 , H01L29/778 , H01L29/812 , H01L33/14 , H01S5/22 , H01S5/323 , H01S5/343 , H01L21/00
CPC分类号： H01L21/30612 , H01L21/02389 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L33/145 , H01S5/2206 , H01S5/32341 , H01S2304/00
摘要： A method of forming a partially etched nitride-based compound semiconductor crystal layer includes the following steps. A non-crystal layer of a nitride-based compound semiconductor is formed. At least a part of the non-crystal layer is then etched to form a partially etched non-crystal layer before the partially etched non-crystal layer is crystallized to form a partially etched nitride-based compound semiconductor crystal layer.
摘要翻译：形成部分蚀刻的氮化物系化合物半导体晶体层的方法包括以下步骤。形成氮化物系化合物半导体的非晶层。然后在部分蚀刻的非晶层结晶以形成部分蚀刻的氮化物基化合物半导体晶体层之前，至少一部分非晶层被蚀刻以形成部分蚀刻的非晶层。

9. 发明授权

US6033490A Growth of GaN layers on quartz substrates 失效
标题翻译： GaN层在石英衬底上的生长
公开(公告)号：US6033490A
公开(公告)日：2000-03-07
申请号：US145465
申请日：1998-09-02
申请人： Akitaka Kimura , Chiaki Sasaoka , Koichi Izumi
发明人： Akitaka Kimura , Chiaki Sasaoka , Koichi Izumi
IPC分类号： C30B29/38 , C30B25/02 , H01L21/20 , H01L21/205 , H01L33/12 , H01L33/16 , H01L33/32 , H01S5/00 , H01S5/323
CPC分类号： C30B25/02 , C30B29/406 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02664 , Y10S438/967
摘要： In a method of manufacturing a semiconductor device which includes a quartz substrate having a z-cut plane of (0001) plane on a surface, a GaN film is first deposited on the surface. Finally, the quartz substrate is removed from the GaN film. The removed GaN film is used as a real substrate for forming GaN based compound semiconductor layers thereon.
摘要翻译：在制造包括在表面具有（0001）面的z切割面的石英基板的半导体器件的方法中，首先在表面上沉积GaN膜。最后，从GaN膜去除石英衬底。去除的GaN膜用作在其上形成GaN基化合物半导体层的实际基板。

10. 发明申请

US20110261854A1 SEMICONDUCTOR LASER AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：半导体激光器及其制造方法
公开(公告)号：US20110261854A1
公开(公告)日：2011-10-27
申请号：US13090324
申请日：2011-04-20
申请人： Chiaki SASAOKA
发明人： Chiaki SASAOKA
IPC分类号： H01S5/323 , H01L21/20
CPC分类号： H01S5/0207 , B82Y20/00 , H01S5/0203 , H01S5/021 , H01S5/16 , H01S5/22 , H01S5/3201 , H01S5/34333 , H01S2301/173 , H01S2301/176
摘要： A semiconductor laser includes a semiconductor substrate and a resonator formed over the semiconductor substrate and containing a nitride semiconductor layer. A strain exerting on a region near the facet of the resonator is smaller than a strain exerting on the region between the regions near the facet.
摘要翻译：半导体激光器包括形成在半导体衬底上并包含氮化物半导体层的半导体衬底和谐振器。施加在谐振器的小面附近的区域上的应变小于在小面附近的区域之间产生的应变。

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