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1. 发明申请

US20110220285A1 METHODS AND SYSTEMS FOR TEXTURING CERAMIC COMPONENTS 审中-公开
标题翻译：陶瓷组件的方法和系统
公开(公告)号：US20110220285A1
公开(公告)日：2011-09-15
申请号：US13025627
申请日：2011-02-11
申请人： Cheng-Tsin Lee , Ho Ouk , Gary D. Harland , Edward Tomasek
发明人： Cheng-Tsin Lee , Ho Ouk , Gary D. Harland , Edward Tomasek
IPC分类号： B05D7/00 , C23C16/44 , C23F1/08 , H01L21/00 , B05D1/02 , B05D1/28 , B05D3/02 , C23C4/08 , C23C4/10 , C23C26/00
CPC分类号： C04B41/52 , C04B41/009 , C04B41/4539 , C04B41/87 , C04B41/89 , C23C14/564 , C23C16/4404 , C23C16/4581 , C04B41/5027 , C04B41/4527 , C04B41/5031 , C04B41/5042 , C04B41/522 , C04B41/5045 , C04B41/5155 , C04B41/4572 , C04B41/5029 , C04B35/00 , C04B35/10 , C04B35/48
摘要： Embodiments of the present invention provide methods for forming a hardened and roughened ceramic component. Specific steps include forming a sintered ceramic component, texturing the surface of the sintered ceramic component, and firing the component to harden it. The resulting ceramic component may have a textured surface, and in a specific embodiment, the textured surface has a roughness of about 100 to about 2000 μin Ra.
摘要翻译：本发明的实施例提供了形成硬化和粗糙化陶瓷部件的方法。具体步骤包括形成烧结陶瓷组分，对烧结的陶瓷组分的表面进行纹理化，并烧制组分以使其硬化。所得到的陶瓷部件可以具有纹理表面，并且在具体实施例中，纹理表面具有约100至约2000μinRa的粗糙度。

2. 发明授权

US07919780B2 System for high efficiency solid-state light emissions and method of manufacture 有权
标题翻译：高效固态发光体系及其制造方法
公开(公告)号：US07919780B2
公开(公告)日：2011-04-05
申请号：US12186165
申请日：2008-08-05
申请人： Cheng Tsin Lee
发明人： Cheng Tsin Lee
IPC分类号： H01L29/26 , H01L31/00 , H01L29/18 , H01L33/00
CPC分类号： B32B37/1018 , B32B38/1866 , B32B2305/55 , B32B2309/02 , B32B2311/12 , B32B2311/24 , H01L33/0079 , H01L33/387 , H01L33/405 , H01L33/42
摘要： In one embodiment of the invention, a bonding material is used to bond a substitute substrate to the LED, wherein the bonding material does not including gold or tin. The bonding material preferably includes gallium (Ga), such as a combination of Ga and Al or Cu. This bonding material has high thermal conductivity, high strength, high temperature stability and is low cost. In another embodiment of the invention, the substitute substrate is first thinned before it is bonded to the LED structure, so that the substitute substrate is flexible and conforms to the shape of the LED structure. In yet another embodiment of the invention, an apparatus is used for bonding a substitute substrate to a LED which includes a plurality of semiconductor epitaxial layers, said semiconductor epitaxial layers having been grown on the growth substrate so that said semiconductor epitaxial layers are curved in shape. The apparatus includes a conduit for evacuating a region near the substitute substrate on a side of the substitute substrate that is opposite to that of said semiconductor epitaxial layers. Gas pressure is applied on the semiconductor epitaxial layers, and the substitute substrate conforms to the shape of said semiconductor epitaxial layers as a result of pressure applied. A bonding material is used for bonding said substitute substrate to the semiconductor epitaxial layers.
摘要翻译：在本发明的一个实施例中，使用接合材料将替代衬底粘合到LED，其中接合材料不包括金或锡。接合材料优选包括镓（Ga），例如Ga和Al或Cu的组合。该接合材料具有高导热性，高强度，高温稳定性，成本低廉。在本发明的另一个实施例中，替代基板首先在结合到LED结构之前变薄，使得替代基板是柔性的并且符合LED结构的形状。在本发明的另一个实施例中，一种装置用于将代用衬底接合到包括多个半导体外延层的LED，所述半导体外延层已经在生长衬底上生长，使得所述半导体外延层呈弯曲形状。该装置包括用于在替代基板的与所述半导体外延层的相反侧的替代基板附近的区域排空的导管。气体压力施加在半导体外延层上，并且由于施加压力，替代衬底符合所述半导体外延层的形状。使用接合材料将所述替代基板接合到半导体外延层。

3. 发明申请

US20080315220A1 High Light Efficiency Solid-State Light Emitting Structure And Methods To Manufacturing The Same 有权
标题翻译：高光效固态发光结构及其制造方法
公开(公告)号：US20080315220A1
公开(公告)日：2008-12-25
申请号：US11777987
申请日：2007-07-13
申请人： Cheng Tsin Lee , Qinghong Du , Jean-Yves Naulin
发明人： Cheng Tsin Lee , Qinghong Du , Jean-Yves Naulin
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/14 , H01L33/22 , H01L33/387 , H01L33/405 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014
摘要： In one embodiment of an epitaxial LED device, a buffer layer (e.g. dielectric layer) between the current spreading layer and the substitute substrate comprises a plurality of vias and has a refractive index that is below that of the current spreading layer. A reflective metal layer between the buffer layer and the substitute substrate is connected to the current spreading layer through the vias in the buffer layer. The buffer layer separates the current spreading layer from the reflective metal layer. In yet another embodiment, stress management is provided by causing or preserving stress, such as compressive stress, in the LED so that stress in the LED is reduced when it experiences thermal cycles. In one implementation of this embodiment, a layer is attached to the LED and reflective metal layer, and causes or preserves stress in the LED along one or more directions parallel to an interface between the LED epitaxial layers so that stress in the LED is reduced in said one or more directions when temperature of the structure is increased.
摘要翻译：在外延LED器件的一个实施例中，电流扩散层和替代衬底之间的缓冲层（例如电介质层）包括多个通孔并具有低于电流扩展层的折射率。缓冲层和替代基板之间的反射金属层通过缓冲层中的通孔连接到电流扩散层。缓冲层将电流扩散层与反射金属层分开。在另一个实施例中，通过引起或保持LED中的应力（例如压缩应力）来提供应力管理，使得当经历热循环时LED中的应力减小。在该实施例的一个实现中，一层附着到LED和反射金属层，并且沿着与LED外延层之间的界面平行的一个或多个方向引起或保持LED中的应力，使得LED中的应力减小当结构的温度增加时表示一个或多个方向。

4. 发明申请

US20060237735A1 High-efficiency light extraction structures and methods for solid-state lighting 审中-公开
标题翻译：高效光提取结构和固态照明方法
公开(公告)号：US20060237735A1
公开(公告)日：2006-10-26
申请号：US11112641
申请日：2005-04-22
申请人： Jean-Yves Naulin , Cheng-Tsin Lee , Ho-Shang Lee
发明人： Jean-Yves Naulin , Cheng-Tsin Lee , Ho-Shang Lee
IPC分类号： H01L33/00
CPC分类号： H01L33/641 , H01L33/0079 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A soft solder flowing into the recesses of a semiconductor thin film LED provides: (a) increased bonding strength and better mechanical durability, (b) improved heat dissipation, (c) enhanced light extraction when the LED film is bonded to a new carrier. Annealing localized islands of absorbing metal creates an ohmic contact. Those isolated islands are inter-connected by a layer of a highly reflective metal. This design enables a significant absorption reduction within the LED device and leads to a significant improvement of light extraction. Additionally, the light extraction efficiency of an isotropic light emitting device is improved via surface shaping of the device by a 2D-array of micro-lenses and photonic band gap structure. For manufacturability purpose the making of micron-size lenses of the surface of the chip may preferably be performed as a final step, preferably with optical lithography.
摘要翻译：流入半导体薄膜LED的凹部的软焊料提供：（a）增加的接合强度和更好的机械耐久性，（b）改善的散热，（c）当LED膜与新的载体结合时增强的光提取。退火局部的吸收金属岛产生欧姆接触。那些孤立的岛屿通过高反射金属层相互连接。该设计使LED器件内的显着吸收减少，并导致光提取的显着改善。此外，各向同性发光器件的光提取效率通过微透镜的2D阵列和光子带隙结构通过器件的表面成形得到改善。对于可制造性目的，优选地，通过光学平版印刷法，最好将芯片表面的微米级透镜制成最后的步骤。

5. 发明授权

US06641939B1 Transition metal oxide doped alumina and methods of making and using 失效
标题翻译：过渡金属氧化物掺杂氧化铝及其制备和使用方法
公开(公告)号：US06641939B1
公开(公告)日：2003-11-04
申请号：US09346472
申请日：1999-07-01
申请人： Cheng-Tsin Lee , Randel F. Mercer
发明人： Cheng-Tsin Lee , Randel F. Mercer
IPC分类号： B32B900
CPC分类号： C04B35/117 , C04B35/62655 , C04B35/6303 , C04B35/64 , C04B2235/3206 , C04B2235/3217 , C04B2235/3231 , C04B2235/3232 , C04B2235/3409 , C04B2235/3418 , C04B2235/652 , C04B2235/6582 , C04B2235/664 , C04B2235/80 , C04B2235/85 , C04B2235/96 , Y10T279/23 , Y10T428/24926
摘要： The invention relates to the utilization of doped alumina for static charge sensitive applications, and to methods for making and using the same, e.g., for varying the electrical conductivity of alumina by doping with an appropriate transition metal oxide and subsequently heating to high temperatures in a reducing environment. This treatment allows the electrical conductivity to be tailored and thus provides a cost effective means for producing components with controlled resistivity.
摘要翻译：本发明涉及用于静电荷敏感应用的掺杂氧化铝的利用，以及用于制造和使用掺杂氧化铝的方法，例如通过掺杂适当的过渡金属氧化物并随后加热至高温来改变氧化铝的导电性减少环境。这种处理允许调整电导率，因此提供了用于制造具有受控电阻率的部件的成本有效的方法。

6. 发明授权

US07683380B2 High light efficiency solid-state light emitting structure and methods to manufacturing the same 有权
标题翻译：高效率的固态发光结构及其制造方法
公开(公告)号：US07683380B2
公开(公告)日：2010-03-23
申请号：US11777987
申请日：2007-07-13
申请人： Cheng Tsin Lee , Qinghong Du , Jean-Yves Naulin
发明人： Cheng Tsin Lee , Qinghong Du , Jean-Yves Naulin
IPC分类号： H01L27/15 , H01L29/26 , H01L31/12 , H01L33/00 , H01L29/22 , H01L29/227 , H01L29/06 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： H01L33/0079 , H01L33/14 , H01L33/22 , H01L33/387 , H01L33/405 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014
摘要： In one embodiment of an epitaxial LED device, a buffer layer (e.g. dielectric layer) between the current spreading layer and the substitute substrate includes a plurality of vias and has a refractive index that is below that of the current spreading layer. A reflective metal layer between the buffer layer and the substitute substrate is connected to the current spreading layer through the vias in the buffer layer. The buffer layer separates the current spreading layer from the reflective metal layer. In yet another embodiment, stress management is provided by causing or preserving stress, such as compressive stress, in the LED so that stress in the LED is reduced when it experiences thermal cycles. In one implementation of this embodiment, a layer is attached to the LED and reflective metal layer, and causes or preserves stress in the LED along one or more directions parallel to an interface between the LED epitaxial layers so that stress in the LED is reduced in said one or more directions when temperature of the structure is increased.
摘要翻译：在外延LED器件的一个实施例中，电流扩展层和替代衬底之间的缓冲层（例如电介质层）包括多个通孔并具有低于电流扩展层的折射率。缓冲层和替代基板之间的反射金属层通过缓冲层中的通孔连接到电流扩散层。缓冲层将电流扩散层与反射金属层分开。在另一个实施例中，通过引起或保持LED中的应力（例如压缩应力）来提供应力管理，使得当经历热循环时LED中的应力减小。在该实施例的一个实现中，一层附着到LED和反射金属层，并且沿着与LED外延层之间的界面平行的一个或多个方向引起或保持LED中的应力，使得LED中的应力减小当结构的温度增加时表示一个或多个方向。

7. 发明申请

US20100032699A1 System for High Efficiency Solid-State Light Emissions and Method of Manufacture 有权
标题翻译：高效率固态光照射系统及制造方法
公开(公告)号：US20100032699A1
公开(公告)日：2010-02-11
申请号：US12186165
申请日：2008-08-05
申请人： Cheng Tsin Lee
发明人： Cheng Tsin Lee
IPC分类号： H01L33/00 , B32B37/10
CPC分类号： B32B37/1018 , B32B38/1866 , B32B2305/55 , B32B2309/02 , B32B2311/12 , B32B2311/24 , H01L33/0079 , H01L33/387 , H01L33/405 , H01L33/42
摘要： In one embodiment of the invention, a bonding material is used to bond a substitute substrate to the LED, wherein the bonding material does not including gold or tin. The bonding material preferably includes gallium (Ga), such as a combination of Ga and Al or Cu. This bonding material has high thermal conductivity, high strength, high temperature stability and is low cost. In another embodiment of the invention, the substitute substrate is first thinned before it is bonded to the LED structure, so that the substitute substrate is flexible and conforms to the shape of the LED structure. In yet another embodiment of the invention, an apparatus is used for bonding a substitute substrate to a LED which comprises a plurality of semiconductor epitaxial layers, said semiconductor epitaxial layers having been grown on the growth substrate so that said semiconductor epitaxial layers are curved in shape. The apparatus comprises a conduit for evacuating a region near the substitute substrate on a side of the substitute substrate that is opposite to that of said semiconductor epitaxial layers. Gas pressure is applied on the semiconductor epitaxial layers, and the substitute substrate conforms to the shape of said semiconductor epitaxial layers as a result of pressure applied. A bonding material is used for bonding said substitute substrate to the semiconductor epitaxial layers.
摘要翻译：在本发明的一个实施例中，使用接合材料将替代衬底粘合到LED，其中接合材料不包括金或锡。接合材料优选包括镓（Ga），例如Ga和Al或Cu的组合。该接合材料具有高导热性，高强度，高温稳定性，成本低廉。在本发明的另一个实施例中，替代基板首先在结合到LED结构之前变薄，使得替代基板是柔性的并且符合LED结构的形状。在本发明的另一个实施例中，一种装置用于将替代衬底接合到包括多个半导体外延层的LED，所述半导体外延层已经在生长衬底上生长，使得所述半导体外延层呈弯曲形。该装置包括用于将替代基板附近的区域排出在与所述半导体外延层的替代基板相反的一侧上的导管。气体压力施加在半导体外延层上，并且由于施加压力，替代衬底符合所述半导体外延层的形状。使用接合材料将所述替代基板接合到半导体外延层。

8. 发明授权

US5163499A Method of forming electronic packages 失效
标题翻译：电子封装形成方法
公开(公告)号：US5163499A
公开(公告)日：1992-11-17
申请号：US520936
申请日：1990-05-09
申请人： Marc S. Newkirk , Danny R. White , Christopher R. Kennedy , Alan S. Nagelberg , Michael K. Aghajanian , Robert J. Wiener , Steven D. Keck , John T. Burke , Peter M. Engelgau , Cheng-Tsin Lee , Michael A. Rocazella
发明人： Marc S. Newkirk , Danny R. White , Christopher R. Kennedy , Alan S. Nagelberg , Michael K. Aghajanian , Robert J. Wiener , Steven D. Keck , John T. Burke , Peter M. Engelgau , Cheng-Tsin Lee , Michael A. Rocazella
IPC分类号： H01L23/02 , C04B35/65 , C04B37/02 , C22C1/10 , H01L21/48 , H01L23/14 , H01L23/373
CPC分类号： C04B35/652 , C22C1/1015 , C22C1/1036 , C22C47/06 , H01L21/4803 , H01L23/14 , H01L23/3733 , C22C2001/1063 , H01L2924/0002
摘要： The present invention relates to the formation of a macrocomposite body by spontaneously infiltrating a permeable mass of filler material or a preform with molten matrix metal and bonding the spontaneously infiltrated material to at least one second material such as a ceramic or ceramic containing body and/or a metal or metal containing body. Particularly, an infiltration enhancer and/or infiltration enhancer precursor and/or infiltrating atmosphere are in communication with a filler material or a preform, at least at some point during the process, which permits molten matrix metal to spontaneously infiltrate the filler material or preform. Moreover, prior to infiltration, the filler material or preform is placed into contact with at least a portion of a second material such that after infiltration of the filler material or preform, the infiltrated material is bonded to the second material, thereby forming a sealable electronic package.
摘要翻译：本发明涉及通过自发渗透填充材料的可渗透物质或具有熔融基质金属的预成型体并将自发渗透的材料结合到至少一种第二材料如陶瓷或含陶瓷的体和/或含金属或金属的物体。特别地，渗透增强剂和/或渗透增强剂前体和/或渗透气氛至少在该过程中的某一点处与填料或预型体连通，这允许熔融基质金属自发地渗入填料或预型体。此外，在渗透之前，将填料或预型体放置成与第二材料的至少一部分接触，使得在填充材料或预型体渗透之后，渗透的材料结合到第二材料，从而形成可密封的电子包。

9. 发明授权

US06652918B1 Method of treating ceramic surfaces 有权
标题翻译：陶瓷表面处理方法
公开(公告)号：US06652918B1
公开(公告)日：2003-11-25
申请号：US09458616
申请日：1999-12-10
申请人： Cheng-Tsin Lee , Keith A. Ferguson , Esteban V. Herreria
发明人： Cheng-Tsin Lee , Keith A. Ferguson , Esteban V. Herreria
IPC分类号： B05D300
CPC分类号： C04B41/009 , B01D57/02 , B01J2219/00317 , B01J2219/00527 , C04B41/4922 , C04B41/53 , C04B41/84 , C04B41/91 , C40B60/14 , G01N27/44704 , G01N27/44795 , C04B41/0072 , C04B41/5307 , C04B35/10
摘要： The invention relates to methods for treating ceramic surfaces to decrease their wettability by aqueous solutions. One method involves polishing the ceramic surface until wettability is decreased, and a second method involves a silane heat treatment. Both methods can be used to produce ceramic supports for IEF and electrophoresis gels, as well as microarray plates.
摘要翻译：本发明涉及处理陶瓷表面以降低其水溶液润湿性的方法。一种方法包括抛光陶瓷表面，直到润湿性降低，第二种方法涉及硅烷热处理。这两种方法都可用于生产IEF和电泳凝胶的陶瓷支架，以及微阵列板。

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