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1. 发明申请

US20060260676A1 Photodetector 审中-公开
标题翻译：光电检测器
公开(公告)号：US20060260676A1
公开(公告)日：2006-11-23
申请号：US11438077
申请日：2006-05-18
申请人： Fei Gao , CheeWee Liu , Sungjoo Lee , Dim-Lee Kwong
发明人： Fei Gao , CheeWee Liu , Sungjoo Lee , Dim-Lee Kwong
IPC分类号： H01L31/00
CPC分类号： H01L31/101 , H01L31/03529 , H01L31/109 , H01L31/1872 , Y02E10/50 , Y02P70/521
摘要： A photodetector and a method of manufacturing the photodetector are provided. The photodetector comprises a first semiconductor layer; a dielectric layer formed on the first semiconductor layer, the dielectric layer comprising a plurality of openings; a second semiconductor layer formed on the dielectric layer, such that portions of the second semiconductor layer are in contact with the first semiconductor layer at the openings; wherein regions of structural disorder with dislocations exist at interfaces between the first and second semiconductor layers at the openings.
摘要翻译：提供光电检测器和制造光电检测器的方法。光电检测器包括第一半导体层; 形成在所述第一半导体层上的电介质层，所述电介质层包括多个开口; 形成在电介质层上的第二半导体层，使得第二半导体层的部分在开口处与第一半导体层接触; 其中具有位错的结构紊乱区域存在于开口处的第一和第二半导体层之间的界面处。

2. 发明申请

US20050118758A1 Method for arranging layout of CMOS device 审中-公开
标题翻译：布置CMOS器件布局的方法
公开(公告)号：US20050118758A1
公开(公告)日：2005-06-02
申请号：US10982017
申请日：2004-11-05
申请人： Feng Yuan , Ching-Fang Huang , Cheewee Liu
发明人： Feng Yuan , Ching-Fang Huang , Cheewee Liu
IPC分类号： H01L21/8238 , H01L27/02 , H01L27/092
CPC分类号： H01L29/7842 , H01L21/823807 , H01L27/0207 , H01L27/092
摘要： A method for arranging a layout of a CMOS (Complementary Metal-Oxide Semiconductor) device is provided. The current direction of the N-type MOS device is perpendicular to the P-type MOS device. The stress along one direction can be applied on both types of MOS devices to enhance the drain current and the operation speed of both devices for CMOS circuit.
摘要翻译：提供了一种布置CMOS（互补金属氧化物半导体）器件的布局的方法。 N型MOS器件的电流方向垂直于P型MOS器件。一个方向的应力可以应用于两种类型的MOS器件，以增强CMOS电路的两个器件的漏极电流和工作速度。

3. 发明授权

US06268615B1 Photodetector 有权
标题翻译：光电检测器
公开(公告)号：US06268615B1
公开(公告)日：2001-07-31
申请号：US09447086
申请日：1999-11-22
申请人： Cheewee Liu , Min-Hung Lee , I-Chen Lin
发明人： Cheewee Liu , Min-Hung Lee , I-Chen Lin
IPC分类号： H01L2906
CPC分类号： H01L31/112
摘要： Disclosed is a photodetector adapted to be used with a voltage source for replacing the conventional CCD. The photodetector includes a substrate electrically connected with an electrode of the voltage source for generating electron-hole pairs in response to a light, a conducting layer electrically connected with the other electrode of the voltage source, and an ultra thin (˜nm) insulating layer formed between the conducting layer and the substrate, wherein one of electrons and holes, excited by the light, in the substrate will move to the conducting layer through the insulating layer so as to form a photo current when the voltage source provides a bias voltage.
摘要翻译：公开了一种适于与用于替代常规CCD的电压源一起使用的光电检测器。光检测器包括与电压源的电极电连接的基板，用于响应于光产生电子 - 空穴对，与电压源的另一个电极电连接的导电层和超薄（〜nm）绝缘层形成在导电层和衬底之间，其中由衬底中的光激发的电子和空穴之一将通过绝缘层移动到导电层，以便当电压源提供偏置电压时形成光电流。

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