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1. 发明授权

US5530541A Atomic absorption apparatus using a phase-modulated light beam 失效
标题翻译：使用相位调制光束的原子吸收装置
公开(公告)号：US5530541A
公开(公告)日：1996-06-25
申请号：US396215
申请日：1995-02-28
申请人： Charles H. Ahn , Malcolm R. Beasley , Steven J. Benerofe , Martin M. Fejer , Robert H. Hammond , Weizhi Wang
发明人： Charles H. Ahn , Malcolm R. Beasley , Steven J. Benerofe , Martin M. Fejer , Robert H. Hammond , Weizhi Wang
IPC分类号： G01J3/433 , G01N21/31 , G01N21/39
CPC分类号： G01N21/3103 , G01J3/4338
摘要： An atomic absorption apparatus using a laser for producing a light beam having a characteristic frequency f, typically ranging from several MHz to several GHz, and a characteristic polarization for measuring the absorption of that light beam by atoms of interest. The apparatus has a modulator to generate a modulating signal to modulate the characteristic frequency f and produce a phase-modulated light beam. The apparatus includes a domain where the specific atoms are located. This domain is positioned in the path of the phase-modulated light beam such that the phase-modulated light beam encounters the specific atoms when passing through the domain and some of the specific atoms absorb a portion of the phase-modulated light beam. Typically, the domains containing the atoms of interest include process chambers for vacuum coating, ion milling, sputtering, mass spectroscopy vapor coating or deposition, and the like. The amount of light absorbed depends on the motion of the atoms relative to the phase-modulated light beam.
摘要翻译：一种使用激光产生具有特征频率f（通常为几MHz至几GHz）的光束的原子吸收装置，以及用于测量该光束被感兴趣原子吸收的特征极化。该装置具有调制器以产生调制信号以调制特征频率f并产生相位调制光束。该装置包括特定原子所在的区域。该域位于相位调制光束的路径中，使得相位调制光束在通过畴时遇到特定原子，并且一些特定原子吸收相位调制光束的一部分。通常，包含感兴趣原子的结构域包括用于真空涂覆，离子研磨，溅射，质谱法蒸镀或沉积的处理室。吸收的光量取决于原子相对于相位调制光束的运动。

2. 发明授权

US06677629B1 Electric or electronic component and application as non volatile memory and device with surface acoustic waves 失效
标题翻译：电气或电子部件和应用作为非易失性存储器和具有表面声波的装置
公开(公告)号：US06677629B1
公开(公告)日：2004-01-13
申请号：US09402195
申请日：1999-09-30
申请人： Oystein Fischer , Jean-Marc Triscone , Charles H. Ahn , Malcom R. Beasley , Christophe Renner , Thomas Tybell
发明人： Oystein Fischer , Jean-Marc Triscone , Charles H. Ahn , Malcom R. Beasley , Christophe Renner , Thomas Tybell
IPC分类号： H01L2976
CPC分类号： H01L51/0035 , B82Y10/00 , G11B9/02 , G11B9/14 , G11B9/1463 , G11B9/149 , G11C11/22 , H01B1/00 , H01L29/00
摘要： The invention concerns a component of composite structure (10) consisting of a layer of ferroelectric material (11) and at least a thin film of semiconductor material or of a thin metal or supraconducting film (12) in close contact with the layer of ferroelectric material (11). It further comprises means for generating local modifications of the ferroelectric material polarization. This mechanism includes a device for applying a voltage between at least one punctiform electrode (13) arranged for selectively scanning the composite structure (10) surface facing that consisting of the semiconductor or thin metal or supraconducting film (12), and the semiconductor or thin metal or supraconducting film.
摘要翻译：本发明涉及由铁电材料层（11）和至少一层半导体材料或薄金属或超导光薄膜（12）的薄膜构成的复合结构（10）的组件，其与铁电材料层（11）。它还包括用于产生铁电材料极化的局部修改的装置。该机构包括用于在布置用于选择性地扫描由半导体或薄金属或上导热膜（12）组成的复合结构（10）表面的至少一个点状电极（13）之间施加电压的装置，以及半导体或薄膜金属或超导膜。

3. 发明申请

US20130001809A1 Ferroelectric Devices including a Layer having Two or More Stable Configurations 审中-公开
公开(公告)号：US20130001809A1
公开(公告)日：2013-01-03
申请号：US13498989
申请日：2010-09-29
申请人： Alexie M. Kolpak , Fred J. Walker , James W. Reiner , Charles H. Ahn , Sohrab Ismail-Beigi
发明人： Alexie M. Kolpak , Fred J. Walker , James W. Reiner , Charles H. Ahn , Sohrab Ismail-Beigi
IPC分类号： H01L29/02
CPC分类号： H01L29/516 , H01L27/11585 , H01L29/40111 , H01L29/78391 , H03K3/36
摘要： Ferroelectric semiconductor devices are provided by including a ferroelectric layer in the device that is made of a material that is not ferroelectric in bulk. Such layers can be disposed at interfaces to promote ferroelectric switching in a semiconductor device. Switching of conduction in the semiconductor is effected by the polarization of a mechanically bi-stable material. This material is not ferroelectric in bulk but can be considered to be when the thickness is sufficiently reduced down to a few atomic layers. Devices including such ferroelectric layers are suitable for various applications, such as transistors and memory cells (both volatile and non-volatile).

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