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1. 发明授权

US09000485B2 Electrode structures, gallium nitride based semiconductor devices including the same and methods of manufacturing the same 有权
标题翻译：电极结构，包括其的氮化镓基半导体器件及其制造方法
公开(公告)号：US09000485B2
公开(公告)日：2015-04-07
申请号：US13489733
申请日：2012-06-06
申请人： Jeong-yub Lee , Wenxu Xianyu , Chang-youl Moon , Yong-young Park , Woo-young Yang , In-jun Hwang
发明人： Jeong-yub Lee , Wenxu Xianyu , Chang-youl Moon , Yong-young Park , Woo-young Yang , In-jun Hwang
IPC分类号： H01L29/20 , H01L21/28 , H01L29/423 , H01L29/66 , H01L29/778 , H01L29/08 , H01L29/49
CPC分类号： H01L21/28264 , H01L29/0843 , H01L29/2003 , H01L29/42364 , H01L29/49 , H01L29/66462 , H01L29/7787
摘要： An electrode structure, a GaN-based semiconductor device including the electrode structure, and methods of manufacturing the same, may include a GaN-based semiconductor layer and an electrode structure on the GaN-based semiconductor layer. The electrode structure may include an electrode element including a conductive material and a diffusion layer between the electrode element and the GaN-based semiconductor layer. The diffusion layer may include a material which is an n-type dopant with respect to the GaN-based semiconductor layer, and the diffusion layer may contact the GaN-based semiconductor layer. A region of the GaN-based semiconductor layer contacting the diffusion layer may be doped with the n-type dopant. The material of the diffusion layer may comprise a Group 4 element.
摘要翻译：包括电极结构的电极结构，GaN基半导体器件及其制造方法可以包括在GaN基半导体层上的GaN基半导体层和电极结构。电极结构可以包括在电极元件和GaN基半导体层之间包括导电材料的电极元件和扩散层。扩散层可以包括相对于GaN基半导体层为n型掺杂剂的材料，并且扩散层可以接触GaN基半导体层。与扩散层接触的GaN基半导体层的区域可以掺杂有n型掺杂剂。扩散层的材料可以包括第4族元素。

2. 发明授权

US08999812B2 Graphene devices and methods of manufacturing the same 有权
标题翻译：石墨烯装置及其制造方法
公开(公告)号：US08999812B2
公开(公告)日：2015-04-07
申请号：US13475098
申请日：2012-05-18
申请人： Wenxu Xianyu , Chang-youl Moon , Jeong-yub Lee , Chang-seung Lee
发明人： Wenxu Xianyu , Chang-youl Moon , Jeong-yub Lee , Chang-seung Lee
IPC分类号： H01L29/16 , H01L27/12 , H01L29/66 , H01L29/786
CPC分类号： H01L29/78684 , H01L27/1266 , H01L29/1606 , H01L29/66045 , H01L29/66742 , H01L29/78603
摘要： A graphene device may include a channel layer including graphene, a first electrode and second electrode on a first region and second region of the channel layer, respectively, and a capping layer covering the channel layer and the first and second electrodes. A region of the channel layer between the first and second electrodes is exposed by an opening in the capping layer. A gate insulating layer may be on the capping layer to cover the region of the channel layer, and a gate may be on the gate insulating layer.
摘要翻译：石墨烯装置可以分别包括在沟道层的第一区域和第二区域上的包括石墨烯，第一电极和第二电极的沟道层，以及覆盖沟道层和第一和第二电极的覆盖层。第一和第二电极之间的沟道层的区域被覆盖层中的开口暴露。栅极绝缘层可以在覆盖层上以覆盖沟道层的区域，并且栅极可以在栅极绝缘层上。

3. 发明授权

US08680497B2 Superhydrophobic electromagnetic field shielding material and method of preparing the same 有权
标题翻译：超疏水电磁场屏蔽材料及其制备方法
公开(公告)号：US08680497B2
公开(公告)日：2014-03-25
申请号：US13536678
申请日：2012-06-28
申请人： Eun-Hyoung Cho , Jin Seung Sohn , Sung Hoon Park , Chang Youl Moon , Ha Jin Kim
发明人： Eun-Hyoung Cho , Jin Seung Sohn , Sung Hoon Park , Chang Youl Moon , Ha Jin Kim
IPC分类号： H01J1/52
CPC分类号： H01J1/52 , B05D1/42 , B05D5/08 , H05K9/009 , Y10T428/31511 , Y10T428/3154 , Y10T428/31663 , Y10T428/31786
摘要： A superhydrophobic electromagnetic field shielding material includes a curable resin and a carbon material, the superhydrophobic electromagnetic field shielding material including at least two depression patterns on an exposed surface. The at least two depression patterns may include a first depression pattern including a plurality of grooves having a same shape and a second depression pattern including a plurality of grooves having a same shape. The carbon material may be about 3 wt % to about 20 wt % based on the total weight of the superhydrophobic electromagnetic field shielding material.
摘要翻译：超疏水电磁场屏蔽材料包括可固化树脂和碳材料，所述超疏水电磁场屏蔽材料包括暴露表面上的至少两个凹陷图案。所述至少两个凹陷图案可以包括包括具有相同形状的多个凹槽的第一凹陷图案和包括具有相同形状的多个凹槽的第二凹陷图案。基于超疏水电磁场屏蔽材料的总重量，碳材料可以为约3重量％至约20重量％。

4. 发明申请

US20130252410A1 SELECTIVE LOW-TEMPERATURE OHMIC CONTACT FORMATION METHOD FOR GROUP III-NITRIDE HETEROJUNCTION STRUCTURED DEVICE 有权
标题翻译： III类氮化物异构结构设备的选择性低温OHMIC接触形成方法
公开(公告)号：US20130252410A1
公开(公告)日：2013-09-26
申请号：US13599980
申请日：2012-08-30
申请人： Xianyu WENXU , Jeong-Yub LEE , Chang -Youl MOON , Yong-Young PARK , Woo Young YANG , Jae-Joon OH , In-Jun HWANG
发明人： Xianyu WENXU , Jeong-Yub LEE , Chang -Youl MOON , Yong-Young PARK , Woo Young YANG , Jae-Joon OH , In-Jun HWANG
IPC分类号： H01L21/28 , H01L21/18 , H01L21/283
CPC分类号： H01L21/268 , H01L21/28575 , H01L21/3245 , H01L29/2003 , H01L29/452 , H01L29/517 , H01L29/66462
摘要： A method for forming a selective ohmic contact for a Group III-nitride heterojunction structured device may include forming a conductive layer and a capping layer on an epitaxial substrate including at least one Group III-nitride heterojunction layer and having a defined ohmic contact region, the capping layer being formed on the conductive layer or between the conductive layer and the Group III-nitride heterojunction layer in one of the ohmic contact region and non-ohmic contact region, and applying at least one of a laser annealing process and an induction annealing process on the substrate at a temperature of less than or equal to about 750° C. to complete the selective ohmic contact in the ohmic contact region.
摘要翻译：用于形成用于III族氮化物异质结结构器件的选择性欧姆接触的方法可包括在包括至少一个III族氮化物异质结层并且具有限定的欧姆接触区域的外延衬底上形成导电层和覆盖层，覆盖层形成在导电层之间或在欧姆接触区域和非欧姆接触区域之一的导电层和III族氮化物异质结层之间，并且施加激光退火工艺和感应退火工艺中的至少一个在小于或等于约750℃的温度下在衬底上完成欧姆接触区域中的选择性欧姆接触。

5. 发明申请

US20130193412A1 TRANSISTORS AND METHODS OF MANUFACTURING THE SAME 有权
标题翻译：晶体管及其制造方法
公开(公告)号：US20130193412A1
公开(公告)日：2013-08-01
申请号：US13595580
申请日：2012-08-27
申请人： Chang-seung LEE , Joo-ho LEE , Yong-sung KIM , Jun-seong KIM , Chang-youl MOON
发明人： Chang-seung LEE , Joo-ho LEE , Yong-sung KIM , Jun-seong KIM , Chang-youl MOON
IPC分类号： H01L29/78 , H01L21/336 , B82Y40/00 , B82Y99/00
CPC分类号： H01L29/1606 , H01L21/6835 , H01L29/41758 , H01L29/41775 , H01L29/42384 , H01L29/66787 , H01L29/778 , H01L29/7831 , H01L2221/6835 , H01L2221/68363 , H01L2221/68381
摘要： Transistors and methods of manufacturing the same may include a gate on a substrate, a channel layer having a three-dimensional (3D) channel region covering at least a portion of a gate, a source electrode over a first region of the channel layer, and a drain electrode over a second region of the channel layer.
摘要翻译：晶体管及其制造方法可以包括衬底上的栅极，具有覆盖栅极的至少一部分的三维（3D）沟道区域的沟道层，沟道层的第一区域上的源电极，以及在沟道层的第二区域上方的漏电极。

6. 发明申请

US20130105863A1 ELECTRODE STRUCTURES, GALLIUM NITRIDE BASED SEMICONDUCTOR DEVICES INCLUDING THE SAME AND METHODS OF MANUFACTURING THE SAME 有权
标题翻译：电极结构，基于氮化镓的半导体器件及其制造方法
公开(公告)号：US20130105863A1
公开(公告)日：2013-05-02
申请号：US13489733
申请日：2012-06-06
申请人： Jeong-yub Lee , Wenxu Xianyu , Chang-youl Moon , Yong-young Park , Woo-young Yang , In-jun Hwang
发明人： Jeong-yub Lee , Wenxu Xianyu , Chang-youl Moon , Yong-young Park , Woo-young Yang , In-jun Hwang
IPC分类号： H01L29/778 , H01L21/338 , B82Y99/00
CPC分类号： H01L21/28264 , H01L29/0843 , H01L29/2003 , H01L29/42364 , H01L29/49 , H01L29/66462 , H01L29/7787
摘要： An electrode structure, a GaN-based semiconductor device including the electrode structure, and methods of manufacturing the same, may include a GaN-based semiconductor layer and an electrode structure on the GaN-based semiconductor layer. The electrode structure may include an electrode element including a conductive material and a diffusion layer between the electrode element and the GaN-based semiconductor layer. The diffusion layer may include a material which is an n-type dopant with respect to the GaN-based semiconductor layer, and the diffusion layer may contact the GaN-based semiconductor layer. A region of the GaN-based semiconductor layer contacting the diffusion layer may be doped with the n-type dopant. The material of the diffusion layer may comprise a Group 4 element.
摘要翻译：包括电极结构的电极结构，GaN基半导体器件及其制造方法可以包括在GaN基半导体层上的GaN基半导体层和电极结构。电极结构可以包括在电极元件和GaN基半导体层之间包括导电材料的电极元件和扩散层。扩散层可以包括相对于GaN基半导体层为n型掺杂剂的材料，并且扩散层可以接触GaN基半导体层。与扩散层接触的GaN基半导体层的区域可以掺杂有n型掺杂剂。扩散层的材料可以包括第4族元素。

7. 发明授权

US08042919B2 Piezoelectric inkjet printhead 失效
标题翻译：压电喷墨打印头
公开(公告)号：US08042919B2
公开(公告)日：2011-10-25
申请号：US12722664
申请日：2010-03-12
申请人： Seung-mo Lim , Tae-kyung Lee , Chang-youl Moon , Jae-woo Chung , Hwa-sun Lee
发明人： Seung-mo Lim , Tae-kyung Lee , Chang-youl Moon , Jae-woo Chung , Hwa-sun Lee
IPC分类号： B41J2/045
CPC分类号： B41J2/14233 , B41J2/055
摘要： A piezoelectric inkjet printhead includes a manifold, a chamber array including a plurality of chambers in connection with the manifold and arranged along at least one side of the manifold, a vibrating plate to cover the plurality of chambers, and a plurality of piezoelectric actuators formed on the vibrating plate to change pressures of corresponding ones of the plurality of chambers by vibrating the vibrating plate. The plurality of chambers includes a plurality of pressure chambers disposed in a center portion of the chamber array and having corresponding ink ejecting nozzles, and at least two dummy chambers, one disposed on each side of the chamber array and having corresponding dummy nozzles that do not eject ink. A plurality of trenches may be formed in the vibrating plate between each of the piezoelectric actuators.
摘要翻译：压电喷墨打印头包括歧管，腔室阵列，其包括与歧管连接的多个腔室，并且沿着歧管的至少一侧布置，覆盖多个腔室的振动板，以及形成在所述振动板通过振动所述振动板来改变所述多个室中相应的室的压力。多个室包括设置在室阵列的中心部分并具有对应的喷墨喷嘴的多个压力室，以及至少两个虚设室，一个设置在室阵列的每一侧上，并且具有不对应的虚拟喷嘴弹出墨水。可以在每个压电致动器之间的振动板中形成多个沟槽。

8. 发明授权

US08002443B2 LED array module 有权
标题翻译： LED阵列模块
公开(公告)号：US08002443B2
公开(公告)日：2011-08-23
申请号：US11473188
申请日：2006-06-23
申请人： Su-ho Shin , Chang-youl Moon , Kyu-ho Shin , Soon-cheol Kweon , Seung-tae Choi , Ki-hwan Kwon
发明人： Su-ho Shin , Chang-youl Moon , Kyu-ho Shin , Soon-cheol Kweon , Seung-tae Choi , Ki-hwan Kwon
IPC分类号： F21V29/00
CPC分类号： F21V29/51 , F21K9/00 , F21V29/52 , F21V29/67 , F21V29/677 , F21Y2105/10 , F21Y2115/10 , H01L33/648 , H01L2224/48091 , H01L2224/73265 , H05K1/0203 , H05K1/0272 , H05K2201/10106 , H01L2924/00014
摘要： A light emitting diode (LED) array module includes a plurality of LEDs; and a substrate which mounts the LEDs and has a built-in cooling device for cooling heat generated when the LED is driven. The cooling device includes a heat radiation space formed on the substrate and a minute passage member which is wick- or mesh-structured to form a plurality of minute passages that operate by a heat pipe principle in the heat radiation space. The cooling device operating by the heat pipe principle is integrally formed on the substrate mounted with the LEDs, so heat radiation performance of the LEDs is enhanced, such that the LEDs can operate stably for a long time.
摘要翻译：发光二极管（LED）阵列模块包括多个LED; 以及安装LED并具有内置冷却装置的基板，用于冷却LED被驱动时产生的热量。冷却装置包括形成在基板上的散热空间和微通道构件，其是芯或网状构造以形成通过热管原理在热辐射空间中操作的多个微小通道。通过热管原理操作的冷却装置一体地形成在安装有LED的基板上，因此LED的散热性能得到增强，使得LED可以长时间稳定地工作。

9. 发明授权

US08002391B2 Inkjet printhead having piezoelectric actuator and method of driving the piezoelectric actuator 失效
标题翻译：具有压电致动器的喷墨打印头和驱动压电致动器的方法
公开(公告)号：US08002391B2
公开(公告)日：2011-08-23
申请号：US12755474
申请日：2010-04-07
申请人： Hwa-sun Lee , Kyo-yeol Lee , Tae-kyung Lee , Chang-youl Moon , Jae-woo Chung
发明人： Hwa-sun Lee , Kyo-yeol Lee , Tae-kyung Lee , Chang-youl Moon , Jae-woo Chung
IPC分类号： B41J2/045
CPC分类号： B41J2/14233
摘要： An inkjet printhead and a method of driving the inkjet printhead include a flow channel substrate having a pressure chamber, and a piezoelectric actuator formed on the flow channel substrate to apply a driving force to the pressure chamber to eject ink. The piezoelectric actuator includes a piezoelectric layer formed on the flow channel substrate to correspond to the pressure chamber, and a plurality of common electrodes and a plurality of driving electrodes alternately arranged in a length direction of the piezoelectric layer.
摘要翻译：喷墨打印头和驱动喷墨打印头的方法包括：具有压力室的流路基板和形成在流路基板上的压电致动器，用于向压力室施加驱动力以喷射油墨。压电致动器包括形成在流路基板上以对应于压力室的压电层，以及沿压电层的长度方向交替布置的多个公共电极和多个驱动电极。

10. 发明授权

US07928545B2 LED package and fabrication method thereof 有权
标题翻译： LED封装及其制造方法
公开(公告)号：US07928545B2
公开(公告)日：2011-04-19
申请号：US11416107
申请日：2006-05-03
申请人： Ki-hwan Kwon , Kyu-ho Shin , Soon-cheol Kweon , Chang-youl Moon , Arthur Darbinian , Seung-tae Choi , Su-ho Shin
发明人： Ki-hwan Kwon , Kyu-ho Shin , Soon-cheol Kweon , Chang-youl Moon , Arthur Darbinian , Seung-tae Choi , Su-ho Shin
IPC分类号： H01L23/495
CPC分类号： H01L33/647 , H01L24/97 , H01L33/486 , H01L33/58 , H01L33/60 , H01L33/62 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/49109 , H01L2224/73265 , H01L2924/01019 , H01L2924/07802 , H01L2924/12041 , Y10T29/49002 , H01L2924/00014 , H01L2924/00
摘要： An LED package and a fabrication method thereof are provided. The LED package includes an upper metal plate having an LED-receiving hole therein; a lower metal plate disposed under the upper metal plate; and an insulator which the upper metal plate and the lower metal plate from each other. A portion of the lower metal plate is exposed via the LED-receiving hole and an LED is mounted on the exposed portion of the lower metal plate and is electrically connected to both of the upper and lower metal plates. A protective cover encloses and protects exposed surfaces of the upper and lower metal plates.
摘要翻译：提供一种LED封装及其制造方法。 LED封装包括在其中具有LED接收孔的上金属板; 设置在所述上金属板下方的下金属板; 以及上金属板和下金属板彼此之间的绝缘体。下部金属板的一部分经由LED接收孔露出，并且LED被安装在下部金属板的暴露部分上并与上部和下部金属板电连接。保护盖包围并保护上下金属板的暴露表面。

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