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1. 发明申请

US20130092230A1 SUBSTRATE COMPRISING A TRANSPARENT CONDUCTIVE OXIDE FILM AND ITS MANUFACTURING PROCESS 审中-公开
标题翻译：包含透明导电氧化膜的基板及其制造工艺
公开(公告)号：US20130092230A1
公开(公告)日：2013-04-18
申请号：US13806573
申请日：2011-06-22
申请人： Alexandre Pereira , Cedric Ducros , Zoe Tebby
发明人： Alexandre Pereira , Cedric Ducros , Zoe Tebby
IPC分类号： B05D5/12 , H01L21/768 , H01L31/0224 , H01L23/482
CPC分类号： B05D5/12 , H01L21/76838 , H01L23/4827 , H01L31/022466 , H01L31/0236 , H01L31/02366 , H01L31/03921 , H01L31/0749 , H01L31/1884 , H01L2924/0002 , Y02E10/541 , Y02P70/521 , Y10T428/24372 , Y10T428/24413 , Y10T428/24421 , H01L2924/00
摘要： The invention relates to a substrate comprising at least one scattering film made of a transparent conductive oxide (TCO) and to a process for manufacturing such a substrate. It also relates to a solar cell comprising such a substrate. The substrate according to the invention comprises a layer of spherical particles made of a material chosen from dielectric and transparent conductive oxides, the layer being coated with a TCO film and the diameters of said spherical particles belonging to at least two populations of different diameters. The invention is applicable in particular to solar cells.
摘要翻译：本发明涉及一种包括由透明导电氧化物（TCO）制成的至少一个散射膜的衬底以及用于制造这种衬底的工艺。它还涉及包含这种基底的太阳能电池。根据本发明的基材包括由选自介电和透明导电氧化物的材料制成的球形颗粒层，该层涂覆有TCO膜，并且所述球形颗粒的直径属于至少两个不同直径的群体。本发明特别适用于太阳能电池。

2. 发明申请

US20070116974A1 Sulfidation-resistant silver-base coating, method for depositing such a coating and use thereof 失效
标题翻译：耐硫酸银银涂层，沉积这种涂层的方法及其用途
公开(公告)号：US20070116974A1
公开(公告)日：2007-05-24
申请号：US11584533
申请日：2006-10-23
申请人： Denis Camel , Laurent Bedel , Frederic Sanchette , Cedric Ducros
发明人： Denis Camel , Laurent Bedel , Frederic Sanchette , Cedric Ducros
IPC分类号： B32B15/04 , B32B9/00 , C23C14/32
CPC分类号： C23C14/165 , C23C14/0084
摘要： The sulfidation resistance of a silver-base material coating is further improved by making a concentration gradient of silver, oxygen and of one or more oxidizable alloying elements that may be present in the material, from the free surface of the coating up to a depth comprised between 10 nm and 1 μm and more particularly between 100 nm and 1 μm. Thus, the coating comprises a stack of one main layer made from silver-base material and of one oxidized thin film. The thin film, with a thickness comprised between 10 nm and 1 μm, thus presents a decreasing silver concentration gradient from the interface between the thin film and the main layer to the free surface of the thin film. Deposition of the coating on a support can be achieved by two successive physical vapor deposition steps, and more particularly by magnetron cathode sputtering.
摘要翻译：银基材料涂层的耐硫化性进一步通过从涂层的自由表面形成银，氧和可能存在于材料中的一种或多种可氧化的合金元素的浓度梯度进一步改善，所述深度包括在10nm和1um之间，更特别地在100nm和1μm之间。因此，涂层包括由银基材料制成的一个主层和一个氧化薄膜的叠层。厚度在10nm和1μm之间的薄膜因此呈现出从薄膜和主层之间的界面到薄膜自由表面的银浓度梯度的降低。可以通过两个连续的物理气相沉积步骤，更具体地通过磁控管阴极溅射，将涂层沉积在载体上。

3. 发明申请

US20090113726A1 METHOD FOR OBTAINING A HARD SURFACE AT THE NANOSCALE 审中-公开
标题翻译：在纳米岩上获得硬表面的方法
公开(公告)号：US20090113726A1
公开(公告)日：2009-05-07
申请号：US12237441
申请日：2008-09-25
申请人： Cedric DUCROS , Frederic SANCHETTE , Vincent SANZONE
发明人： Cedric DUCROS , Frederic SANCHETTE , Vincent SANZONE
IPC分类号： B26B21/54 , C23C14/35
CPC分类号： B26B21/60 , B82Y30/00 , C23C14/025 , C23C14/0688
摘要： The invention relates to a method for forming a thin, high hardness coating and devices comprising it.The method of the invention consists in depositing, by magnetron cathode sputtering, a titanium film on at least one surface of a substrate under a partial pressure of argon of 1 Pa, then in depositing, by magnetron cathode sputtering, a titanium nitride film, onto the film obtained by introducing nitrogen into the cathodic sputtering chamber while maintaining a partial pressure of 1 Pa, and in depositing a film of a composite nanostructured material based on titanium, zirconium, boron and nitrogen onto the film obtained by magnetron cathode sputtering in active co-sputtering mode.The method of the invention can be applied in many fields, and in particular in the mechanical field in order to improve the surface hardness of mechanical components.
摘要翻译：本发明涉及一种形成薄的高硬度涂层的方法和包括它的装置。本发明的方法在于通过磁控管阴极溅射在1Pa氩气的分压下在衬底的至少一个表面上沉积钛膜，然后通过磁控管阴极溅射将氮化钛膜沉积到通过在保持分压为1Pa的同时将氮气引入阴极溅射室中，并且在基于钛，锆，硼和氮的复合纳米结构材料的膜上沉积到通过活性钴中的磁控管阴极溅射获得的膜上而获得的膜 - 溅射模式。本发明的方法可以应用于许多领域，特别是在机械领域中，以提高机械部件的表面硬度。

4. 发明申请

US20080176357A1 Method For Making A Photovoltaic Cell Based On Thin-Film Silicon 失效
标题翻译：基于薄膜硅制造光伏电池的方法
公开(公告)号：US20080176357A1
公开(公告)日：2008-07-24
申请号：US11908811
申请日：2006-03-20
申请人： Stephanie Huet , Pierre Juliet , Cedric Ducros , Frederic Sanchette
发明人： Stephanie Huet , Pierre Juliet , Cedric Ducros , Frederic Sanchette
IPC分类号： H01L31/18 , H01L21/04 , H01L21/365
CPC分类号： H01L31/1872 , H01L31/03921 , H01L31/056 , H01L31/0745 , Y02E10/52 , Y02P70/521
摘要： The invention concerns a method for making a photovoltaic cell based on thin film silicon, which consists in providing a heterojunction by depositing on a support at least one first P— (or N—) doped amorphous silicon layer (13) and a second N— (or P—) doped amorphous silicon layer (14), in crystallising, at least partly, the at least one first layer (13) using a technology for crystallising silicon by pulsed electronic beam.
摘要翻译：本发明涉及一种用于制造基于薄膜硅的光伏电池的方法，其包括通过在载体上沉积至少一个第一P-（或N-）掺杂的非晶硅层（13）和第二N- （或P-）掺杂的非晶硅层（14），至少部分地使用用于通过脉冲电子束使硅结晶的技术至少部分地形成至少一个第一层（13）。

5. 发明授权

US08709547B2 Method for using a super-slippery thin layer characterized by the method for making same 失效
标题翻译：使用其制造方法为特征的超光滑薄层的方法
公开(公告)号：US08709547B2
公开(公告)日：2014-04-29
申请号：US13057039
申请日：2009-07-09
申请人： Cedric Ducros , Jerome Gavillet
发明人： Cedric Ducros , Jerome Gavillet
IPC分类号： B05D1/36 , B05D7/00
CPC分类号： C23C28/00 , B05D5/08 , B05D7/14 , B05D2350/63 , B82Y30/00 , B82Y40/00 , C10M103/00 , C10M2201/061 , C10M2201/062 , C10M2201/066 , C10M2201/10 , C10M2201/102 , C10M2227/04 , C10N2220/082 , C10N2230/06 , C10N2250/141 , C23C14/08 , C23C14/28 , C23C28/044 , C23C28/046 , Y10T156/10
摘要： The invention relates to the use of a super-slippery thin-layer film or coating for enhancing the lubrication capacity of a part to be subjected to great friction and wear. The film of the invention for improving the lubrication capacity of parts to be subjected to important friction and wear includes at least: a layer (3) of a hard material selected from titanium nitride (TiN), chromium nitride (CrN), titanium carbide (TiC), chromium carbide (CrC), tungsten carbide (W2C) and tungsten carbide-carbon composites (WC/C), alumina (AI2O3), molybdenum sulphide (MoS2), and materials of the hydrogenated amorphous carbon type (a: CH), the layer including on one surface thereof a series of dips and protrusions; and a layer (4) of an oleophilic material. The invention can particularly be used in the field of mechanics.
摘要翻译：本发明涉及使用超光滑薄膜或涂层来提高要承受较大摩擦和磨损的部件的润滑能力。本发明的用于改善受到重要摩擦和磨损的部件的润滑能力的本发明的薄膜至少包括：选自氮化钛（TiN），氮化铬（CrN），碳化钛（ TiC），碳化铬（CrC），碳化钨（W2C）和碳化钨 - 碳复合材料（WC / C），氧化铝（Al2O3），硫化钼（MoS2）和氢化非晶碳型（a:CH），所述层在其一个表面上包括一系列凹陷和突起; 和亲油材料层（4）。本发明可以特别用于力学领域。

6. 发明授权

US08288196B2 Process for fabricating a silicon-based thin-film photovoltaic cell 失效
标题翻译：制造硅基薄膜光伏电池的方法
公开(公告)号：US08288196B2
公开(公告)日：2012-10-16
申请号：US12989311
申请日：2009-04-20
申请人： Cedric Ducros , Frederic Sanchette , Christophe Secouard
发明人： Cedric Ducros , Frederic Sanchette , Christophe Secouard
IPC分类号： H01L21/00 , H01L21/36
CPC分类号： H01L31/182 , H01L31/03682 , H01L31/0745 , H01L31/1872 , H01L31/202 , Y02E10/546 , Y02P70/521
摘要： A process for fabricating a silicon-based thin-film photovoltaic cell, applicable for example in the energy generation field. The fabrication process includes a) depositing a p-doped or n-doped amorphous silicon film, the X-ray diffraction spectrum of which has a line centered at 28° that has a mid-height width, denoted by a, such that 4.7°≦a
摘要翻译：一种可应用于能量产生领域的硅基薄膜光伏电池的制造方法。制造工艺包括：a）沉积p掺杂或n掺杂的非晶硅膜，其X射线衍射光谱具有以28°为中心的线，其具有由a表示的中等高度宽度，使得4.7° ＆nlE; <6.0°，在基材上。

7. 发明申请

US20110192521A1 METHOD FOR USING A SUPER-SLIPPERY THIN LAYER CHARACTERISED BY THE METHOD FOR MAKING SAME 失效
标题翻译：使用由其制造的方法表征的超级滑动薄层的方法
公开(公告)号：US20110192521A1
公开(公告)日：2011-08-11
申请号：US13057039
申请日：2009-07-09
申请人： Cedric Ducros , Jerome Gavillet
发明人： Cedric Ducros , Jerome Gavillet
IPC分类号： B05D1/38 , B31B1/60
CPC分类号： C23C28/00 , B05D5/08 , B05D7/14 , B05D2350/63 , B82Y30/00 , B82Y40/00 , C10M103/00 , C10M2201/061 , C10M2201/062 , C10M2201/066 , C10M2201/10 , C10M2201/102 , C10M2227/04 , C10N2220/082 , C10N2230/06 , C10N2250/141 , C23C14/08 , C23C14/28 , C23C28/044 , C23C28/046 , Y10T156/10
摘要： The invention relates to the use of a super-slippery thin-layer film or coating for enhancing the lubrication capacity of a part to be subjected to great friction and wear. The film of the invention for improving the lubrication capacity of parts to be subjected to important friction and wear includes at least: a layer (3) of a hard material selected from titanium nitride (TiN), chromium nitride (CrN), titanium carbide (TiC), chromium carbide (CrC), tungsten carbide (W2C) and tungsten carbide-carbon composites (WC/C), alumina (AI2O3), molybdenum sulphide (MoS2), and materials of the hydrogenated amorphous carbon type (a:CH), the layer including on one surface thereof a series of dips and protrusions; and a layer (4) of an oleophilic material. The invention can particularly be used in the field of mechanics.
摘要翻译：本发明涉及使用超光滑薄膜或涂层来提高要承受较大摩擦和磨损的部件的润滑能力。本发明的用于改善受到重要摩擦和磨损的部件的润滑能力的本发明的薄膜至少包括：选自氮化钛（TiN），氮化铬（CrN），碳化钛（ TiC），碳化铬（CrC），碳化钨（W2C）和碳化钨 - 碳复合材料（WC / C），氧化铝（Al2O3），硫化钼（MoS2）和氢化非晶碳型（a:CH），所述层在其一个表面上包括一系列凹陷和突起; 和亲油材料层（4）。本发明可以特别用于力学领域。

8. 发明授权

US07592198B2 Method for making a photovoltaic cell based on thin-film silicon 失效
标题翻译：基于薄膜硅制造光伏电池的方法
公开(公告)号：US07592198B2
公开(公告)日：2009-09-22
申请号：US11908811
申请日：2006-03-20
申请人： Stephanie Huet , Pierre Juliet , Cedric Ducros , Frederic Sanchette
发明人： Stephanie Huet , Pierre Juliet , Cedric Ducros , Frederic Sanchette
IPC分类号： H01L21/20
CPC分类号： H01L31/1872 , H01L31/03921 , H01L31/056 , H01L31/0745 , Y02E10/52 , Y02P70/521
摘要： The invention concerns a method for making a photovoltaic cell based on thin film silicon, which consists in providing a heterojunction by depositing on a support at least one first P— (or N—) doped amorphous silicon layer (13) and a second N— (or P—) doped amorphous silicon layer (14), in crystallizing, at least partly, the at least one first layer (13) using a technology for crystallizing silicon by pulsed electronic beam.
摘要翻译：本发明涉及一种用于制造基于薄膜硅的光伏电池的方法，其包括通过在载体上沉积至少一个第一P-（或N-）掺杂的非晶硅层（13）和第二N- （或P-）掺杂的非晶硅层（14），至少部分地使用通过脉冲电子束使硅结晶的技术至少部分地形成至少一个第一层（13）。

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