专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明公开

EP1296933A1 SELF-REDUCIBLE COPPER(II) SOURCE REAGENTS FOR CHEMICAL VAPOR DEPOSITION OF COPPER METAL 有权
标题翻译：本身REDUCING铜（II）试剂CVD铜金属
公开(公告)号：EP1296933A1
公开(公告)日：2003-04-02
申请号：EP01937900.7
申请日：2001-05-31
申请人： Chi, Yun , Hsu, Peng-Fu , Lin, Tsung-Wu , Liu, Chao-Shiuan , Carty, Arthur J.
发明人： HSU, Peng-Fu , LIN, Tsung-Wu , LIU, Chao-Shiuan , CARTY, Arthur, J. , CHI, Yun
IPC分类号： C07C215/08 , C07C217/08 , C23C16/18
CPC分类号： C23C16/18 , C07C215/08 , C07C217/08
摘要： Volatile low melting solid CU(II) metal complexes are provided which are capable of depositing a copper film on various substrates under CVD conditions in the absence of reducing carrier gas H2. These CU(II) metal complexes are represented by the structure formula: Cu(OCCF3R1CH2NHR2)2 wherein R1 is selected from hydrogen, C1-C4 lower-alkyl or perfluorinated C1-C4 lower-alkyl groups, e.g., CH¿3?, and CF3, etc., and wherein R?2¿ is C1-C6 lower-alkyl or C1-C6 lower-alkene, which may be substituted by one or more fluorine atoms, by a C1-C6 lower-alkoxy group or by a C1-C6 di-lower-alkyl amino group, provided that when R1 is CF¿3, R?2 is other than hydrogen or methyl. A process for depositing copper film using these Cu(II) metal complexes is also provided.

2. 发明公开

EP1446408A1 VOLATILE NOBLE METAL ORGANOMETALLIC COMPLEXES 审中-公开
标题翻译：挥发性有机金属贵金属络合物
公开(公告)号：EP1446408A1
公开(公告)日：2004-08-18
申请号：EP02774205.5
申请日：2002-11-08
申请人： Chi, Yun , Chen, Yao-Lun , Liu, Chao-Shiuan , Carty, Arthur J. , Lai, Ying Hui , Song, Yi Hwa
发明人： Chi, Yun , Chen, Yao-Lun , Liu, Chao-Shiuan , Carty, Arthur J. , Lai, Ying Hui , Song, Yi Hwa
IPC分类号： C07F1/00 , C07F15/00 , C23C16/00 , C07C215/08 , C07C251/08
CPC分类号： C07F15/004 , C07F15/002 , C07F15/0026 , C07F15/0033 , C07F15/0046 , C07F15/0053
摘要： A series of noble metal organometallic complexes of the general formula (I): MLaXb(FBC)c, wherein M is a noble metal such as iridium, ruthenium or osmium, and L is a neutral ligand such as carbonyl, alkene or diene; X is an anionic ligand such as chloride, bromide, iodide and trifluoroacetate group; and FBC is a fluorinated bidentate chelate ligand such as beta diketonate, beta-ketoiminate, amino-alcoholate and amino-alcoholate ligand, wherein a is an integer of from zero (0) to three (3), b is an integer of from zero (0) to one (1) and c is an 10 integer of from one (1) to three (3). The resulting noble metal complexes possess enhanced volatility and thermal stability characteristics, and are suitable for chemical vapor deposition(CVD) applications. The corresponding noble metal complex is formed by treatment of the FBC ligand with a less volatile metal halide. Also disclosed are CVD methods for using the noble metal complexes as source reagents for deposition of noble metal-containing films such as Ir, Ru and Os, or even metal oxide film materials IrO2, OsO2 and RuO2.

3. 发明申请

WO2003040150A1 VOLATILE NOBLE METAL ORGANOMETALLIC COMPLEXES 审中-公开
标题翻译：挥发性金属有机复合物
公开(公告)号：WO2003040150A1
公开(公告)日：2003-05-15
申请号：PCT/CA2002/001721
申请日：2002-11-08
申请人： CHI, Yun , CHEN, Yao-Lun , LIU, Chao-Shiuan , CARTY, Arthur, J. , LAI, Ying, Hui , SONG, Yi, Hwa
发明人： CHI, Yun , CHEN, Yao-Lun , LIU, Chao-Shiuan , CARTY, Arthur, J. , LAI, Ying, Hui , SONG, Yi, Hwa
IPC分类号： C07F1/00
CPC分类号： C07F15/004 , C07F15/002 , C07F15/0026 , C07F15/0033 , C07F15/0046 , C07F15/0053
摘要： A series of noble metal organometallic complexes of the general formula (I): ML a X b (FBC) c , wherein M is a noble metal such as iridium, ruthenium or osmium, and L is a neutral ligand such as carbonyl, alkene or diene; X is an anionic ligand such as chloride, bromide, iodide and trifluoroacetate group; and FBC is a fluorinated bidentate chelate ligand such as beta diketonate, beta-ketoiminate, amino-alcoholate and amino-alcoholate ligand, wherein a is an integer of from zero (0) to three (3), b is an integer of from zero (0) to one (1) and c is an 10 integer of from one (1) to three (3). The resulting noble metal complexes possess enhanced volatility and thermal stability characteristics, and are suitable for chemical vapor deposition(CVD) applications. The corresponding noble metal complex is formed by treatment of the FBC ligand with a less volatile metal halide. Also disclosed are CVD methods for using the noble metal complexes as source reagents for deposition of noble metal-containing films such as Ir, Ru and Os, or even metal oxide film materials IrO 2 , OsO 2 and RuO 2 .
摘要翻译：一系列通式（I）的贵金属有机金属络合物：MLaXb（FBC）c，其中M是贵金属如铱，钌或锇，L是中性配体如羰基，烯烃或二烯; X是阴离子配体，如氯化物，溴化物，碘化物和三氟乙酸盐基团; 并且FBC是氟化双齿螯合配体，例如β-二酮酸酯，β-酮亚胺酸酯，氨基醇化物和氨基醇化物配体，其中a是从零（0）到三（3）的整数，b是零的整数（0）〜（1），c为1（3）的10个整数。所得到的贵金属络合物具有增强的挥发性和热稳定性特征，并且适用于化学气相沉积（CVD）应用。通过用不太易挥发的金属卤化物处理FBC配体形成相应的贵金属络合物。还公开了使用贵金属络合物作为用于沉积含有贵金属的膜如Ir，Ru和Os，或甚至金属氧化物膜材料IrO 2，OsO 2和RuO 2的源试剂的CVD方法。

4. 发明专利

AU6368701A Self-reducible copper(ii) source reagents for chemical vapor deposition of copper metal 未知
公开(公告)号：AU6368701A
公开(公告)日：2001-12-17
申请号：AU6368701
申请日：2001-05-31
申请人： CHI YUN , HSU PENG FU , LIN TSUNG WU , LIU CHAO SHIUAN , CARTY ARTHUR J
发明人： HSU PENG-FU , LIN TSUNG-WU , LIU CHAO-SHIUAN , CARTY ARTHUR J
IPC分类号： C07F1/08 , C07C215/08 , C07C217/08 , C23C16/18
摘要： Volatile low melting solid Cu(II) metal complexes are provided which are capable of depositing a copper film on various substrates under CVD conditions in the absence of reducing carrier gas H2. These CU(II) metal complexes are represented by the structure formula:wherein R1 is selected from hydrogen, C1-C4 lower-alkyl or perfluorinated C1-C4 lower-alkyl groups, e.g., CH3, and CF3, etc., and wherein R2 is C1-C6 lower-alkyl or C1-C6 lower-alkene, which may be substituted by one or more fluorine atoms, by a C1-C6 lower-alkoxy group or by a C1-C6 di-lower-alkyl amino group, provided that when R1 is CF3, R2 is other than hydrogen or methyl. A process for depositing copper film using these Cu(II) metal complexes is also provided.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式