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    • 3. 发明申请
    • CONNECTION ARRANGEMENT FOR IGBT POWER MODULES
    • IGBT功率模块的连接布置
    • WO2010049473A1
    • 2010-05-06
    • PCT/EP2009/064256
    • 2009-10-29
    • ABB RESEARCH LTDCOTTET, DidierASPLUND, GunnarLINDER, Stefan
    • COTTET, DidierASPLUND, GunnarLINDER, Stefan
    • H01L25/07
    • H01L25/072H01L2924/0002Y10T29/41H01L2924/00
    • A semiconductor power module (100) includes at least two sub modules (101-106). The sub modules (101-106) include at least one respective transistor (107) having a collector (108), an emitter (109) and a gate (110). Furthermore a connection arrangement is provided which includes a collector terminal unit (201) adapted for connecting the collectors of the at least two sub modules (101-106) collectively to external circuit components, at least two emitter terminal units (301- 304) adapted for connecting the respective emitters (109) of the at least two sub modules (101-106) individually to external circuit components, and at least two gate terminal units (401-404) adapted for connecting the respective gates (110) of the at least two sub modules (101-106) individually to external circuit components.
    • 半导体功率模块(100)包括至少两个子模块(101-106)。 子模块(101-106)包括具有集电极(108),发射极(109)和栅极(110)的至少一个相应的晶体管(107)。 此外,提供了一种连接装置,其包括适于将至少两个子模块(101-106)的集电器集体地连接到外部电路部件的集电极端子单元(201),至少两个发射极端子单元(301-304) 用于将至少两个子模块(101-106)的各个发射器(109)分别连接到外部电路部件,以及至少两个栅极端子单元(401-404),适于连接各个所述栅极 至少两个子模块(101-106)分别连接到外部电路组件。