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1. 发明申请

WO9812749A3 EMITTER-SWITCHED THYRISTOR 审中-公开
标题翻译：辐射源控晶闸管
公开(公告)号：WO9812749A3
公开(公告)日：1999-11-25
申请号：PCT/EP9705165
申请日：1997-09-20
申请人： VISHAY SEMICONDUCTOR GMBH , XU SHUMING , CONSTAPEL RAINER , KOREC JACEK
发明人： XU SHUMING , CONSTAPEL RAINER , KOREC JACEK
IPC分类号： H01L29/74 , H01L29/745 , H01L29/749
CPC分类号： H01L29/749 , H01L29/7436 , H01L29/7455
摘要： In an emitter-switched thyristor with a main thyristor (TH) composed of a p+ anode emitter (1), a drift zone (3') of opposite conductivity type, a zone (4) which has in the switched-off state a blocking zone with respect to zone (3) and an emitter zone (5) at the cathode side, again with an opposite conductivity type, so that a p+n-pn+ zone sequence results, a transistor structure (T) composed of the first three zones of alternating conductivity is provided in parallel thereto with an emitter (1), a base (3) and a collector (8). This structure contains a NMOSFET (M1) for directly driving the cathode emitters (5) through the cathode connection (KA). The source of this transistor is contacted by the cathode, as well as the collector zone (8) which forms the channel zone of the MOSFET at the surface of the semiconductor. The corresponding drain zone is connected to the n+ cathode emitter (5) of the main thyristor (TH) by an electric conductor (6). A switching-in DMOSFET (M2) is further provided whose gate (G2) is connected to the gate (G1) of the NMOSFET (M1), a source (S2) contacted by the cathode (K) and embedded in a p-base. A conductive connection is established with the cathode contact of the switching-in NMOSFET (M1), and the common connection extends up to a cathode connection (KA). A drain zone (D2) is embedded in the drift zone (3) and the substrate zones of M1 and M2 are in contact with the cathode. The structure contains a PMOSFET (M3) whose gate is connected to the cathode, whose drain (D3) forms a part of the collector zone (8) of the transistor (T) for the secondary current, whose source zone is connected to the base zone (4) of the main thyristor (TH) next to the cathode and whose substrate zone is formed by a part of the n-doped zone (3) adjacent to the surface of the component.
摘要翻译：在具有主闸流管（TH）的发射极控晶闸管，它由相反导电类型的p + -Anodenemitter（1），一个漂移区（3“）的，一个区（4），其具有相对于处于关闭状态的阻挡区的区域（3）和阴极侧发射极区（5）被形成，又具有相反导电类型，以便一个区序列p +产生正的pn +是一个由交替的具有发射极导电性的第一三个区域这躺在并联的晶体管结构（T）（1）碱的（3 ）和集电极（8）。该结构包括用于阴极发射器（5）由阴极端子（KA），其特征在于，该晶体管的源极由阴极以及集电区接触的直接控制的NMOS（M1）（8）附接到所述半导体，沟道区的表面的经由电导体的MOSFET形式，与相关联的漏区（6）被连接到主晶闸管（TH）的第n + -Kathodenemitter（5）。此外，电源DMOSFET（M2）被提供，其栅极连接（G2）的NMOSFET（M1）的栅极（G1），源极（S2），它是由与阴极（K）接触，并在一个P- 被嵌入的基础上，其特征在于，与所述NMOSFET的阴极接触，用于切换（M1），以及到阴极端子（KA）的共同连接的导电连接被引导。漏区（D2）被嵌入在漂移区（3），其中所述衬底区域由M1和M2与阴极接触。该结构包括一个PMOSFET（M3），其栅极连接到所述阴极，且其漏极（D3）是集电极区的一部分（8）的晶体管（T）的次级流，它具有阴极附近的基极区的源极区（4）的主晶闸管（ TH）连接，并且其衬底区是由邻近于所述设备的表面的n型掺杂区（3）的一部分而形成。

2. 发明申请

WO1998012749A2 EMITTER-SWITCHED THYRISTOR 审中-公开
标题翻译：辐射源控晶闸管
公开(公告)号：WO1998012749A2
公开(公告)日：1998-03-26
申请号：PCT/EP1997005165
申请日：1997-09-20
申请人： DAIMLER-BENZ AKTIENGESELLSCHAFT , XU, Shuming , CONSTAPEL, Rainer , KOREC, Jacek
发明人： DAIMLER-BENZ AKTIENGESELLSCHAFT
IPC分类号： H01L27/00
CPC分类号： H01L29/749 , H01L29/7436 , H01L29/7455
摘要： In an emitter-switched thyristor with a main thyristor (TH) composed of a p+ anode emitter (1), a drift zone (3') of opposite conductivity type, a zone (4) which has in the switched-off state a blocking zone with respect to zone (3) and an emitter zone (5) at the cathode side, again with an opposite conductivity type, so that a p+n-pn+ zone sequence results, a transistor structure (T) composed of the first three zones of alternating conductivity is provided in parallel thereto with an emitter (1), a base (3) and a collector (8). This structure contains a NMOSFET (M1) for directly driving the cathode emitters (5) through the cathode connection (KA). The source of this transistor is contacted by the cathode, as well as the collector zone (8) which forms the channel zone of the MOSFET at the surface of the semiconductor. The corresponding drain zone is connected to the n+ cathode emitter (5) of the main thyristor (TH) by an electric conductor (6). A switching-in DMOSFET (M2) is further provided whose gate (G2) is connected to the gate (G1) of the NMOSFET (M1), a source (S2) contacted by the cathode (K) and embedded in a p-base. A conductive connection is established with the cathode contact of the switching-in NMOSFET (M1), and the common connection extends up to a cathode connection (KA). A drain zone (D2) is embedded in the drift zone (3) and the substrate zones of M1 and M2 are in contact with the cathode. The structure contains a PMOSFET (M3) whose gate is connected to the cathode, whose drain (D3) forms a part of the collector zone (8) of the transistor (T) for the secondary current, whose source zone is connected to the base zone (4) of the main thyristor (TH) next to the cathode and whose substrate zone is formed by a part of the n-doped zone (3) adjacent to the surface of the component.
摘要翻译：在具有主闸流管（TH）的发射极控晶闸管，它由相反导电类型的p + -Anodenemitter（1），一个漂移区（3“）的，一个区（4），其具有相对于处于关闭状态的阻挡区的区域（3）和阴极侧发射极区（5）被形成，又具有相反导电类型，以便一个区序列p +产生正的pn +是一个由交替的具有发射极导电性的第一三个区域这躺在并联的晶体管结构（T）（1）碱的（3 ）和集电极（8）。该结构包括用于阴极发射器（5）由阴极端子（KA），其特征在于，该晶体管的源极由阴极以及集电区接触的直接控制的NMOS（M1）（8）附接到所述半导体，沟道区的表面的经由电导体的MOSFET形式，与相关联的漏区（6）被连接到主晶闸管（TH）的第n + -Kathodenemitter（5）。此外，电源DMOSFET（M2）被提供，其栅极连接（G2）的NMOSFET（M1）的栅极（G1），源极（S2），它是由与阴极（K）接触，并在一个P- 被嵌入的基础上，其特征在于，与所述NMOSFET的阴极接触，用于切换（M1），以及到阴极端子（KA）的共同连接的导电连接被引导。漏区（D2）被嵌入在漂移区（3），其中所述衬底区域由M1和M2与阴极接触。该结构包括一个PMOSFET（M3），其栅极连接到所述阴极，且其漏极（D3）是集电极区的一部分（8）的晶体管（T）的次级流，它具有阴极附近的基极区的源极区（4）的主晶闸管（ TH）连接，并且其衬底区是由邻近于所述设备的表面的n型掺杂区（3）的一部分而形成。

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