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1. 发明申请

WO2009149467A2 METHOD AND SYSTEM FOR CONCENTRATING PARTICLES FROM A SOLUTION 审中-公开
标题翻译：从溶液中浓缩颗粒的方法和系统
公开(公告)号：WO2009149467A2
公开(公告)日：2009-12-10
申请号：PCT/US2009046652
申请日：2009-06-08
申请人： UNIV WASHINGTON , CHUNG JAE-HYUN , YEO WOONHONG , LEE KYONG-HOON , CHAMBERLAIN JEFFREY W , FOTOUHI GARETH , LIU SHIENG , OH KIE SEOK , RATNER DANIEL M , GAO DAYONG , CHOU FONG-LI
发明人： CHUNG JAE-HYUN , YEO WOONHONG , LEE KYONG-HOON , CHAMBERLAIN JEFFREY W , FOTOUHI GARETH , LIU SHIENG , OH KIE SEOK , RATNER DANIEL M , GAO DAYONG , CHOU FONG-LI
IPC分类号： G01N1/36 , C12Q1/24 , G01N33/48 , G01N35/10
CPC分类号： G01N27/44791 , G01N1/40 , G01N27/447 , G01N27/44721 , G01N27/4473 , G01N33/569 , G01N2001/4038
摘要： Methods and systems are provided for concentrating particles (e.g., bacteria, viruses, cells, and nucleic acids) suspended in a liquid. Electric-field-induced forces urge the particles towards a first electrode immersed in the liquid. When the particles are in close proximity to (e.g., in contact with) the first electrode, the electrode is withdrawn from the liquid and capillary forces formed between the withdrawing electrode and the surface of the liquid immobilize the particles on the electrode. Upon withdrawal of the electrode from the liquid, the portion of the electrode previously immersed in the liquid has particles immobilized on its surface.
摘要翻译：提供了用于浓缩悬浮在液体中的颗粒（例如细菌，病毒，细胞和核酸）的方法和系统。电场引起的力迫使颗粒朝向浸入液体中的第一电极。当颗粒紧邻（例如与第一电极接触）时，电极从液体中排出，并且在抽出电极和液体表面之间形成的毛细管力将颗粒固定在电极上。当电极从液体中取出时，预先浸入液体中的电极部分具有固定在其表面上的颗粒。

2. 发明申请

WO2009029302A3 SHADOW EDGE LITHOGRAPHY FOR NANOSCALE PATTERNING AND MANUFACTURING 审中-公开
标题翻译：用于纳米图案和制造的阴影边缘平版印刷
公开(公告)号：WO2009029302A3
公开(公告)日：2009-08-27
申请号：PCT/US2008063113
申请日：2008-05-08
申请人： UNIV WASHINGTON , CHUNG JAE-HYUN , BAI JOHN GUOFENG , YEO WOON-HONG
发明人： CHUNG JAE-HYUN , BAI JOHN GUOFENG , YEO WOON-HONG
IPC分类号： H01L21/027
CPC分类号： B82Y10/00 , B82Y40/00 , H01L21/0337 , H01L29/0665 , H01L29/0673 , Y10T428/24372
摘要： An advanced high-resolution and high-throughput shadow edge (116) lithography (SEL) method is disclosed for forming uniform zero- one- and two-dimensional nanostructures on a substrate. The method entails high-vacuum oblique vapor deposition and a compensated shadow effect of a pre-patterned layer (100). A method of compensating for cross-substrate variation is also disclosed. The compensation approach enables routine, low-cost fabrication of uniform nanoscale features, or nanogaps (110) on the order of 10 nm ± 1 nm, that can be used to etch nanowells (196) or to form nanostructures such as nanowires (169), using a selective metal lift-off process. A wafer-scale analytical model is proposed for predicting the width of nanogaps (110) fabricated by the shadow effect on pre-patterned edges. By combining compensation and pattern reversal techniques with multiple shadow patterning, two-dimensional structures such as crossing nanowires may be generated. A technique is disclosed for smoothing edge roughness of the nanostructures.
摘要翻译：公开了先进的高分辨率和高通量阴影边缘（116）光刻（SEL）方法用于在衬底上形成均匀的零一维和二维纳米结构。该方法需要高真空倾斜气相沉积和预制图层（100）的补偿阴影效应。还公开了补偿交叉衬底变化的方法。这种补偿方法可实现均匀纳米级特征或纳米间隙（110）的常规低成本制造，纳米间隙（10nm）的数量级为10nm±1nm，可用于蚀刻纳米孔（196）或形成纳米结构，如纳米线（169），采用选择性金属剥离工艺。提出了一种晶片级分析模型，用于预测由预先图案化边缘上的阴影效应制造的纳米间隙（110）的宽度。通过将补偿和图案反转技术与多重阴影图案结合，可以生成诸如交叉纳米线的二维结构。公开了一种平滑纳米结构的边缘粗糙度的技术。

3. 发明申请

WO2009029302A9 SHADOW EDGE LITHOGRAPHY FOR NANOSCALE PATTERNING AND MANUFACTURING 审中-公开
标题翻译：用于纳米图案和制造的阴影边缘图
公开(公告)号：WO2009029302A9
公开(公告)日：2009-05-07
申请号：PCT/US2008063113
申请日：2008-05-08
申请人： UNIV WASHINGTON , CHUNG JAE-HYUN , BAI JOHN GUOFENG , YEO WOON-HONG
发明人： CHUNG JAE-HYUN , BAI JOHN GUOFENG , YEO WOON-HONG
CPC分类号： B82Y10/00 , B82Y40/00 , H01L21/0337 , H01L29/0665 , H01L29/0673 , Y10T428/24372
摘要： An advanced high-resolution and high-throughput shadow edge (116) lithography (SEL) method is disclosed for forming uniform zero- one- and two-dimensional nanostructures on a substrate. The method entails high-vacuum oblique vapor deposition and a compensated shadow effect of a pre-patterned layer (100). A method of compensating for cross-substrate variation is also disclosed. The compensation approach enables routine, low-cost fabrication of uniform nanoscale features, or nanogaps (110) on the order of 10 nm ± 1 nm, that can be used to etch nanowells (196) or to form nanostructures such as nanowires (169), using a selective metal lift-off process. A wafer-scale analytical model is proposed for predicting the width of nanogaps (110) fabricated by the shadow effect on pre-patterned edges. By combining compensation and pattern reversal techniques with multiple shadow patterning, two-dimensional structures such as crossing nanowires may be generated. A technique is disclosed for smoothing edge roughness of the nanostructures.
摘要翻译：公开了先进的高分辨率和高通量阴影边缘（116）光刻（SEL）方法，用于在衬底上形成均匀的零一维和二维纳米结构。该方法需要高真空倾斜气相沉积和预图案化层（100）的补偿阴影效应。还公开了补偿交叉衬底变化的方法。补偿方法可以实现均匀纳米尺度特征或10nm±1nm量级的纳米角（110）的常规，低成本制造，其可用于蚀刻纳米孔（196）或形成纳米结构，例如纳米线（169），使用选择性金属剥离过程。提出了一种晶片级分析模型，用于预测通过阴影效应制作的预先图案化边缘的纳米光栅（110）的宽度。通过将补偿和图案反转技术与多个阴影图案组合，可以产生诸如交叉纳米线的二维结构。公开了一种用于平滑纳米结构的边缘粗糙度的技术。

4. 发明申请

WO2009029302A2 SHADOW EDGE LITHOGRAPHY FOR NANOSCALE PATTERNING AND MANUFACTURING 审中-公开
标题翻译：用于纳米图案和制造的阴影边缘平版印刷
公开(公告)号：WO2009029302A2
公开(公告)日：2009-03-05
申请号：PCT/US2008/063113
申请日：2008-05-08
申请人： UNIVERSITY OF WASHINGTON , CHUNG, Jae-Hyun , BAI, John Guofeng , YEO, Woon-Hong
发明人： CHUNG, Jae-Hyun , BAI, John Guofeng , YEO, Woon-Hong
CPC分类号： B82Y10/00 , B82Y40/00 , H01L21/0337 , H01L29/0665 , H01L29/0673 , Y10T428/24372
摘要： An advanced high-resolution and high-throughput shadow edge (116) lithography (SEL) method is disclosed for forming uniform zero- one- and two-dimensional nanostructures on a substrate. The method entails high-vacuum oblique vapor deposition and a compensated shadow effect of a pre-patterned layer (100). A method of compensating for cross-substrate variation is also disclosed. The compensation approach enables routine, low-cost fabrication of uniform nanoscale features, or nanogaps (110) on the order of 10 nm ± 1 nm, that can be used to etch nanowells (196) or to form nanostructures such as nanowires (169), using a selective metal lift-off process. A wafer-scale analytical model is proposed for predicting the width of nanogaps (110) fabricated by the shadow effect on pre-patterned edges. By combining compensation and pattern reversal techniques with multiple shadow patterning, two-dimensional structures such as crossing nanowires may be generated. A technique is disclosed for smoothing edge roughness of the nanostructures.
摘要翻译：公开了先进的高分辨率和高通量阴影边缘（116）光刻（SEL）方法用于在衬底上形成均匀的零一维和二维纳米结构。该方法需要高真空倾斜气相沉积和预制图层（100）的补偿阴影效应。还公开了补偿交叉衬底变化的方法。这种补偿方法可实现均匀的纳米尺度特征或纳米间隙（110）的常规，低成本制造，量级为10nm左右; 1纳米，这可以用于使用选择性金属剥离工艺来蚀刻纳米孔（196）或形成纳米结构（例如纳米线（169））。提出了一种晶片级分析模型，用于预测由预先图案化边缘上的阴影效应制造的纳米间隙（110）的宽度。通过将补偿和图案反转技术与多重阴影图案结合，可以生成诸如交叉纳米线的二维结构。公开了一种用于平滑纳米结构的边缘粗糙度的技术。

5. 发明申请

WO2009149467A3 METHOD AND SYSTEM FOR CONCENTRATING PARTICLES FROM A SOLUTION 审中-公开
公开(公告)号：WO2009149467A3
公开(公告)日：2009-12-10
申请号：PCT/US2009/046652
申请日：2009-06-08
申请人： UNIVERSITY OF WASHINGTON , CHUNG, Jae-Hyun , YEO, Woonhong , LEE, Kyong-Hoon , CHAMBERLAIN, Jeffrey, W. , FOTOUHI, Gareth , LIU, Shieng , OH, Kie, Seok , RATNER, Daniel, M. , GAO, Dayong , CHOU, Fong-Li
发明人： CHUNG, Jae-Hyun , YEO, Woonhong , LEE, Kyong-Hoon , CHAMBERLAIN, Jeffrey, W. , FOTOUHI, Gareth , LIU, Shieng , OH, Kie, Seok , RATNER, Daniel, M. , GAO, Dayong , CHOU, Fong-Li
IPC分类号： G01N1/36 , G01N35/10 , C12Q1/24 , G01N33/48
摘要： Methods and systems are provided for concentrating particles (e.g., bacteria, viruses, cells, and nucleic acids) suspended in a liquid. Electric-field-induced forces urge the particles towards a first electrode immersed in the liquid. When the particles are in close proximity to (e.g., in contact with) the first electrode, the electrode is withdrawn from the liquid and capillary forces formed between the withdrawing electrode and the surface of the liquid immobilize the particles on the electrode. Upon withdrawal of the electrode from the liquid, the portion of the electrode previously immersed in the liquid has particles immobilized on its surface.

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