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    • 7. 发明申请
    • METHOD OF FORMING STRAINED SILICON MATERIALS WITH IMPROVED THERMAL CONDUCTIVITY
    • 形成具有改善的导热性的应变硅材料的方法
    • WO2006017640A1
    • 2006-02-16
    • PCT/US2005/027691
    • 2005-08-04
    • INTERNATIONAL BUSINESS MACHINES CORPORATIONBEDELL, Stephen, W.CHEN, HuajieFOGEL, KeithMITCHELL, Ryan, M.SADANA, Devendra, K.
    • BEDELL, Stephen, W.CHEN, HuajieFOGEL, KeithMITCHELL, Ryan, M.SADANA, Devendra, K.
    • H01L21/36
    • H01L29/1054H01L21/02381H01L21/0245H01L21/02507H01L21/02532
    • A method is disclosed for forming a strained Si layer on SiGe, where the SiGe layer has improved thermal conductivity. A first layer (41) of Si or Ge is deposited on a substrate (10) in a first depositing step; a second layer (42) of the other element is deposited on the first layer in a second depositing step; and the first and second depositing steps are repeated so as to form a combined SiGe layer (50) having a plurality of Si layers and a plurality of Ge layers (41-44). The respective thicknesses of the Si layers and Ge layers are in accordance with a desired composition ratio of the combined SiGe layer. The combined SiGe layer (50) is characterized as a digital alloy of Si and Ge having a thermal conductivity greater than that of a random alloy of Si and Ge. This method may further include the step of depositing a Si layer (61) on the combined SiGe layer (50); the combined SiGe layer is characterized as a relaxed SiGe layer, and the Si layer (61) is a strained Si layer. For still greater thermal conductivity in the SiGe layer, the first layer and second layer may be deposited so that each layer consists essentially of a single isotope.
    • 公开了一种在SiGe上形成应变Si层的方法,其中SiGe层具有改善的导热性。 在第一沉积步骤中,在衬底(10)上沉积Si或Ge的第一层(41) 另一元件的第二层(42)在第二沉积步骤中沉积在第一层上; 并且重复第一和第二沉积步骤以形成具有多个Si层和多个Ge层(41-44)的组合SiGe层(50)。 Si层和Ge层的各自的厚度根据组合的SiGe层的期望组成比。 组合的SiGe层(50)的特征在于具有大于Si和Ge的随机合金的热导率的Si和Ge的数字合金。 该方法还可以包括在组合SiGe层(50)上沉积Si层(61)的步骤。 组合的SiGe层被表征为弛豫的SiGe层,并且Si层(61)是应变Si层。 对于SiGe层中的更高的热导率,可以沉积第一层和第二层,使得每层基本上由单一同位素组成。