专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2010047976A2 SILICON ETCH WITH PASSIVATION USING PLASMA ENHANCED OXIDATION 审中-公开
标题翻译：采用等离子体增强氧化钝化的硅蚀刻剂
公开(公告)号：WO2010047976A2
公开(公告)日：2010-04-29
申请号：PCT/US2009/060214
申请日：2009-10-09
申请人： LAM RESEARCH CORPORATION , WINNICZEK, Jaroslaw W. , CHEBI, Robert P.
发明人： WINNICZEK, Jaroslaw W. , CHEBI, Robert P.
IPC分类号： H01L21/3065
CPC分类号： H01L21/32137 , H01J37/32082 , H01L21/3065
摘要： A method and apparatus for etching a silicon layer through a patterned mask formed thereon are provided. The silicon layer is placed in an etch chamber. An etch gas comprising a fluorine containing gas and an oxygen and hydrogen containing gas is provided into the etch chamber. A plasma is generated from the etch gas and features are etched into the silicon layer using the plasma. The etch gas is then stopped. The plasma may contain OH radicals.
摘要翻译：提供了一种通过其上形成的图案化掩模来蚀刻硅层的方法和设备。硅层被放置在蚀刻室中。包括含氟气体和含氧和含氢气体的蚀刻气体被提供到蚀刻室中。从蚀刻气体产生等离子体，并且使用等离子体将特征蚀刻到硅层中。蚀刻气体然后停止。血浆可能含有OH自由基。

2. 发明申请

WO2007133413A3 PHOTORESIST STRIPPING CHAMBER AND METHODS OF ETCHING PHOTORESIST ON SUBSTRATES 审中-公开
标题翻译：光电子剥离室和蚀刻基片上的光刻胶的方法
公开(公告)号：WO2007133413A3
公开(公告)日：2008-10-30
申请号：PCT/US2007010115
申请日：2007-04-25
申请人： LAM RES CORP , CHEBI ROBERT P , WINNICZEK JAROSLAW W , MILLER ALAN J , LO GLADYS S
发明人： CHEBI ROBERT P , WINNICZEK JAROSLAW W , MILLER ALAN J , LO GLADYS S
IPC分类号： H01L21/26 , B44C1/22 , H01L21/42
CPC分类号： H01L21/31138 , H01J37/321 , H01J2237/3342
摘要： Methods of processing a substrate so as to protect an active area include positioning a substrate in an inductively coupled plasma processing chamber, supplying process gas to the chamber, generating plasma from the process gas and processing the substrate so as to protect the active area by maintaining a plasma potential of about 5 to 15 volts at the substrate surface and/or passivating the active area by using a siliane-free process gas including at least one additive effective to form a protective layer on the active area of the substrate wherein the protective layer includes at least one element from the additive which is already present in the active area.
摘要翻译：处理衬底以保护有源区域的方法包括将衬底定位在电感耦合等离子体处理室中，将工艺气体供应到腔室，从处理气体产生等离子体并处理衬底，以通过保持来保护有源区域在衬底表面上具有约5至15伏特的等离子体电位和/或通过使用包含至少一种在衬底的有源区上形成保护层的至少一种添加剂的无硅衬底工艺气体来钝化活性区域，其中保护层包括已经存在于活性区域中的来自添加剂的至少一种元素。

3. 发明申请

WO2006107573A2 HIGH STRIP RATE DOWNSTREAM CHAMBER 审中-公开
标题翻译：高速下水箱
公开(公告)号：WO2006107573A2
公开(公告)日：2006-10-12
申请号：PCT/US2006/009972
申请日：2006-03-20
申请人： LAM RESEARCH CORPORATION , WANG, Ing-Yann , WINNICZEK, Jaroslaw, W. , COOPERBERG, David, J. , EDELBERG, Erik, A. , CHEBI, Robert, P.
发明人： WANG, Ing-Yann , WINNICZEK, Jaroslaw, W. , COOPERBERG, David, J. , EDELBERG, Erik, A. , CHEBI, Robert, P.
IPC分类号： H01L21/306 , C03C25/68
CPC分类号： H01J37/32449 , H01J37/32357 , H01J37/3244 , Y10T137/0318 , Y10T137/85938
摘要： A gas chamber contains upper and lower chamber bodies forming a cavity, a heating chuck for a wafer, a remote gas source, and an exhaust unit. Gas is injected into the cavity through channels in an injector. Each channel has sections that are bent with respect to each other at a sufficient angle to substantially eliminate entering light rays entering the channel from exiting the channel without reflection. The channels have funnel-shaped nozzles at end points proximate to the chuck. The injector also has thermal expansion relief slots and small gaps between the injector and mating surfaces of the chamber and gas source. The temperature of the injector is controlled by a cooling liquid in cooling channels and electrical heaters in receptacles of the injector. The upper chamber body is funnel-shaped and curves downward at an end of the upper chamber body proximate to the chuck.
摘要翻译：气室包含形成空腔的上下腔体，用于晶片的加热卡盘，远程气体源和排气单元。气体通过注射器中的通道注入空腔。每个通道具有相对于彼此以足够角度弯曲的部分，以基本上消除进入通道的入射光线而不反射离开通道。通道在靠近卡盘的端点处具有漏斗形喷嘴。注射器还具有热膨胀释放槽和注射器与腔室和气体源的配合表面之间的小间隙。喷射器的温度由冷却通道中的冷却液体和喷射器插座中的电加热器控制。上腔体是漏斗形的，并且在上腔体的靠近卡盘的端部处向下弯曲。

4. 发明申请

WO2012087919A3 METHODS AND APPARATUS FOR GAS DELIVERY INTO PLASMA PROCESSING CHAMBERS 审中-公开
标题翻译：将气体输送到等离子体处理室的方法和设备
公开(公告)号：WO2012087919A3
公开(公告)日：2012-09-20
申请号：PCT/US2011065814
申请日：2011-12-19
申请人： APPLIED MATERIALS INC , CHEBI ROBERT P , DETMAR STANLEY , CHESHIRE ALAN , ROUPILLARD GABRIEL , GRANADOS ALFREDO
发明人： CHEBI ROBERT P , DETMAR STANLEY , CHESHIRE ALAN , ROUPILLARD GABRIEL , GRANADOS ALFREDO
IPC分类号： H05H1/24 , H05H1/34
CPC分类号： H01J37/3244 , H01J37/321 , H01J37/3211 , H01J37/32834 , H01L21/68742
摘要： Methods and apparatus for gas delivery into plasma processing chambers are provided herein. In some embodiments, an apparatus for processing a substrate includes a process chamber having a processing volume, a substrate support disposed in the processing volume, an inductively coupled plasma source to generate an electric field within the processing volume that includes one or more regions of local maxima in the magnitude of the electric field, and one or more gas injectors to selectively direct a predominant portion of a process gas flowed through the one or more gas injectors into the one or more regions of local maxima.
摘要翻译：本文提供了用于将气体输送到等离子体处理室中的方法和设备。在一些实施例中，用于处理衬底的装置包括具有处理容积的处理室，设置在处理容积中的衬底支撑件，电感耦合等离子体源以在处理容积内产生电场，该电场包括一个或多个局部区域以及一个或多个气体喷射器，以选择性地将流经所述一个或多个气体喷射器的处理气体的主要部分引导至所述一个或多个局部最大值区域。

5. 发明申请

WO2012087921A1 METHODS FOR ETCHING A SUBSTRATE 审中-公开
标题翻译：蚀刻基板的方法
公开(公告)号：WO2012087921A1
公开(公告)日：2012-06-28
申请号：PCT/US2011/065817
申请日：2011-12-19
申请人： APPLIED MATERIALS, INC. , CHEBI, Robert P. , CHESHIRE, Alan , ROUPILLARD, Gabriel , GRANADOS, Alfredo
发明人： CHEBI, Robert P. , CHESHIRE, Alan , ROUPILLARD, Gabriel , GRANADOS, Alfredo
IPC分类号： H01L21/3065
CPC分类号： H01L21/30655 , B81B2203/033 , B81C1/00619 , B81C2201/0112 , H01J37/32403 , H01L21/67069 , H01L21/67748 , H01L21/6831
摘要： Methods for etching a substrate in a plasma etch reactor may include (a) depositing polymer on surfaces of a feature formed in substrate disposed in the etch reactor using first reactive species formed from a first process gas comprising a polymer forming gas; (b) etching the bottom surface of the feature of the substrate in the etch reactor using a third reactive species formed from a third process gas including an etching gas; and (c) bombarding a bottom surface of the feature with a second reactive species formed from a second process gas comprising one or more of an inert gas, an oxidizing gas, a reducing gas, or the polymer forming gas while at least one of depositing the polymer to remove at least some of the polymer disposed on the bottom surface or etching the bottom surface to at least one of chemically or physically damage the bottom surface.
摘要翻译：用于蚀刻等离子体蚀刻反应器中的衬底的方法可以包括（a）使用由包含聚合物形成气体的第一工艺气体形成的第一反应性物质在聚合物沉积在沉积在蚀刻反应器中的衬底的表面上沉积聚合物; （b）使用由包括蚀刻气体的第三工艺气体形成的第三反应性物质蚀刻所述蚀刻反应器中所述衬底的所述特征的底表面; 和（c）用包含一种或多种惰性气体，氧化气体，还原性气体或形成聚合物的气体的第二工艺气体形成的第二反应性物质轰击所述特征的底部表面，同时，所述聚合物除去布置在底表面上的至少一些聚合物或蚀刻底表面至少一种化学或物理损伤底表面。

6. 发明申请

WO2010047978A3 SILICON ETCH WITH PASSIVATION USING CHEMICAL VAPOR DEPOSITION 审中-公开
标题翻译：硅钝化用化学气相沉积钝化
公开(公告)号：WO2010047978A3
公开(公告)日：2010-07-01
申请号：PCT/US2009060218
申请日：2009-10-09
申请人： LAM RES CORP , WINNICZEK JAROSLAW W , CHEBI ROBERT P
发明人： WINNICZEK JAROSLAW W , CHEBI ROBERT P
IPC分类号： H01L21/3065 , H01L21/205
CPC分类号： H01L21/3065 , H01J37/32082 , H01L21/32137
摘要： A silicon layer is etched through a patterned mask formed thereon using an etch chamber. A fluorine (F) containing etch gas and a silicon (Si) containing chemical vapor deposition gas are provided in the etch chamber. The fluorine (F) containing etch gas is used to etch features into the silicon layer, and the silicon (Si) containing chemical vapor deposition gas is used to form a silicon-containing deposition layer on sidewalls of the features. A plasma is generated from the etch gas and the chemical vapor deposition gas, and a bias voltage is provided. Features are etched into the silicon layer using the plasma, and a silicon-containing passivation layer is deposited on the sidewalls of the features which are being etched. Silicon in the passivation layer primarily comes from the chemical vapor deposition gas. The etch gas and the chemical vapor deposition gas are then stopped.
摘要翻译：使用蚀刻室将硅层蚀刻穿过其上形成的图案化掩模。在蚀刻室中提供包含氟（F）的蚀刻气体和包含硅（Si）的化学气相沉积气体。使用含氟（F）蚀刻气体将特征蚀刻到硅层中，并且使用含硅（Si）的化学气相沉积气体在特征的侧壁上形成含硅沉积层。从蚀刻气体和化学气相沉积气体产生等离子体，并提供偏置电压。使用等离子体将特征蚀刻到硅层中，并且在正被蚀刻的特征的侧壁上沉积含硅钝化层。钝化层中的硅主要来自化学气相沉积气体。然后停止蚀刻气体和化学气相沉积气体。

7. 发明申请

WO2004111727A3 METHODS OF REMOVING PHOTORESIST FROM SUBSTRATES 审中-公开
标题翻译：从基板去除光电子的方法
公开(公告)号：WO2004111727A3
公开(公告)日：2005-07-07
申请号：PCT/US2004019054
申请日：2004-06-15
申请人： LAM RES CORP , EDELBERG ERIK A , CHEBI ROBERT P , LOW GLADYS SOWAN
发明人： EDELBERG ERIK A , CHEBI ROBERT P , LOW GLADYS SOWAN
IPC分类号： G03F7/42 , H01L21/311 , G03F7/00
CPC分类号： H01L21/31138 , G03F7/427
摘要： Methods of etching a carbon-rich layer on organic photoresist overlying an inorganic layer can utilize a process gas including CxHyFz, where y>=x and z>=0, and one or more optional components to generate a plasma effective to etch the carbon-rich layer with low removal of the inorganic layer. The carbon-rich layer can be removed in the same processing chamber, or alternatively can be removed in a different processing chamber, as used to remove the bulk photoresist.
摘要翻译：在覆盖无机层的有机光刻胶上蚀刻富碳层的方法可以利用包括C x H y F z的工艺气体，其中y> = x和z> = 0，以及一种或多种任选组分以产生有效蚀刻碳 - 富层，无机层去除率低。富碳层可以在相同的处理室中除去，或者可以在不同的处理室中除去，以去除体光致抗蚀剂。

8. 发明申请

WO2006028858A3 METHODS OF REMOVING PHOTORESIST ON SUBSTRATES 审中-公开
标题翻译：去除基质上的光敏剂的方法
公开(公告)号：WO2006028858A3
公开(公告)日：2006-07-27
申请号：PCT/US2005031008
申请日：2005-08-31
申请人： LAM RES CORP , EDELBERG ERIK A , CHEBI ROBERT P , PANCHULA ALEX F
发明人： EDELBERG ERIK A , CHEBI ROBERT P , PANCHULA ALEX F
IPC分类号： H01L21/302 , G03C5/00
CPC分类号： G03F7/40 , G03F7/427 , H01L21/31138
摘要： Methods of etching a carbon-rich layer on organic photoresist overlying an inorganic layer can utilize a process gas including a fluorine-containing gas, an oxygen-containing gas, and a hydrocarbon gas, and one or more optional components to generate a plasma effective to etch the carbon-rich layer with low removal of the inorganic layer. The carbon-rich layer can be removed in the same processing chamber, or alternatively can be removed in a different processing chamber, as used to remove the bulk photoresist.
摘要翻译：在覆盖无机层的有机光致抗蚀剂上蚀刻富碳层的方法可以利用包括含氟气体，含氧气体和烃气体的工艺气体以及一种或多种任选组分来产生等离子体，以低去除无机层的方式蚀刻富碳层。富碳层可以在相同的处理室中去除，或者可以在不同的处理室中去除，如用于去除大块光致抗蚀剂。

9. 发明申请

WO2006028858A2 METHODS OF REMOVING PHOTORESIST ON SUBSTRATES 审中-公开
标题翻译：在基片上去除光电子的方法
公开(公告)号：WO2006028858A2
公开(公告)日：2006-03-16
申请号：PCT/US2005/031008
申请日：2005-08-31
申请人： LAM RESEARCH CORPORATION , EDELBERG, Erik, A. , CHEBI, Robert, P. , PANCHULA, Alex, F.
发明人： EDELBERG, Erik, A. , CHEBI, Robert, P. , PANCHULA, Alex, F.
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： G03F7/40 , G03F7/427 , H01L21/31138
摘要： Methods of etching a carbon-rich layer on organic photoresist overlying an inorganic layer can utilize a process gas including a fluorine-containing gas, an oxygen-containing gas, and a hydrocarbon gas, and one or more optional components to generate a plasma effective to etch the carbon-rich layer with low removal of the inorganic layer. The carbon-rich layer can be removed in the same processing chamber, or alternatively can be removed in a different processing chamber, as used to remove the bulk photoresist.
摘要翻译：在覆盖无机层的有机光致抗蚀剂上蚀刻富碳层的方法可以利用包括含氟气体，含氧气体和烃气体的工艺气体以及一种或多种任选组分来产生有效的等离子体用无机层的低去除蚀刻富碳层。富碳层可以在相同的处理室中除去，或者可以在不同的处理室中除去，以去除体光致抗蚀剂。

10. 发明申请

WO2010047978A2 SILICON ETCH WITH PASSIVATION USING CHEMICAL VAPOR DEPOSITION 审中-公开
标题翻译：使用化学蒸气沉积物进行钝化的硅蚀刻
公开(公告)号：WO2010047978A2
公开(公告)日：2010-04-29
申请号：PCT/US2009/060218
申请日：2009-10-09
申请人： LAM RESEARCH CORPORATION , WINNICZEK, Jaroslaw, W. , CHEBI, Robert P.
发明人： WINNICZEK, Jaroslaw, W. , CHEBI, Robert P.
IPC分类号： H01L21/3065 , H01L21/205
CPC分类号： H01L21/3065 , H01J37/32082 , H01L21/32137
摘要： A silicon layer is etched through a patterned mask formed thereon using an etch chamber. A fluorine (F) containing etch gas and a silicon (Si) containing chemical vapor deposition gas are provided in the etch chamber. The fluorine (F) containing etch gas is used to etch features into the silicon layer, and the silicon (Si) containing chemical vapor deposition gas is used to form a silicon-containing deposition layer on sidewalls of the features. A plasma is generated from the etch gas and the chemical vapor deposition gas, and a bias voltage is provided. Features are etched into the silicon layer using the plasma, and a silicon-containing passivation layer is deposited on the sidewalls of the features which are being etched. Silicon in the passivation layer primarily comes from the chemical vapor deposition gas. The etch gas and the chemical vapor deposition gas are then stopped.
摘要翻译：通过使用蚀刻室在其上形成的图案化掩模蚀刻硅层。在蚀刻室中设置含有含氟（F）的蚀刻气体和含硅（Si）的化学气相沉积气体。使用含氟（F）的蚀刻气体将特征蚀刻到硅层中，并且使用含硅（Si）的化学气相沉积气体在特征的侧壁上形成含硅沉积层。从蚀刻气体和化学气相沉积气体产生等离子体，并提供偏置电压。使用等离子体将特征蚀刻到硅层中，并且在被蚀刻的特征的侧壁上沉积含硅钝化层。钝化层中的硅主要来自化学气相沉积气体。然后停止蚀刻气体和化学气相沉积气体。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式