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1. 发明授权

US08838030B2 Bluetooth earphone 有权
标题翻译：蓝牙耳机
公开(公告)号：US08838030B2
公开(公告)日：2014-09-16
申请号：US13243054
申请日：2011-09-23
申请人： Jui-Chi Liao , Chi-Hsiang Chen , Che-Cheng Chang
发明人： Jui-Chi Liao , Chi-Hsiang Chen , Che-Cheng Chang
IPC分类号： H04B7/00 , H04R1/10
CPC分类号： H04R1/1091 , H04R2420/07
摘要： A Bluetooth earphone includes a main body, an earpiece disposed at one side of the main body, an ear hanger, a power unit, and first and second rotating shafts. The ear hanger includes a first end portion disposed on the earpiece, a bent-back portion bent from the first end portion, and a second end portion extending from the bent-back portion. The power unit includes a battery set disposed removably on the second end portion of the ear hanger, and a transmission cable electrically connected to the main body and the battery set. The first rotating shaft unit connects the earpiece pivotally to the main body. The second rotating shaft unit connects the ear hanger pivotally to the earpiece. The Bluetooth earphone is adjustable to be worn on the left or right ear of a user, and is convenient to replace the battery set.
摘要翻译：蓝牙耳机包括主体，设置在主体一侧的听筒，耳挂架，动力单元以及第一和第二旋转轴。耳吊具有设置在听筒上的第一端部，从第一端部弯曲的弯曲部，以及从弯曲部延伸的第二端部。动力单元包括可拆卸地设置在耳挂架的第二端部的电池组，以及电连接到主体和电池组的传输电缆。第一旋转轴单元将耳机枢转地连接到主体。第二旋转轴单元将耳挂枢转地连接到耳机。蓝牙耳机可调，可佩戴在用户的左耳或右耳，方便更换电池组。

2. 发明申请

US20130181262A1 Performing Treatment on Stressors 有权
标题翻译：对应激者进行治疗
公开(公告)号：US20130181262A1
公开(公告)日：2013-07-18
申请号：US13349969
申请日：2012-01-13
申请人： Che-Cheng Chang , Po-Chi Wu , Chang-Yin Chen , Zhe-Hao Zhang , Yi-Chen Huang
发明人： Che-Cheng Chang , Po-Chi Wu , Chang-Yin Chen , Zhe-Hao Zhang , Yi-Chen Huang
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/66636 , H01L21/823807 , H01L21/823814 , H01L29/165 , H01L29/6659 , H01L29/7833 , H01L29/7834 , H01L29/7848
摘要： A method includes forming a gate stack over a semiconductor substrate, wherein the gate stack includes a gate dielectric and a gate electrode over the gate dielectric. A portion of the semiconductor substrate adjacent to the gate stack is recessed to form a recess. A semiconductor region is epitaxially grown in the recess. The semiconductor region is implanted with a p-type impurity or an n-type impurity. A dry treatment is performed on the semiconductor region.
摘要翻译：一种方法包括在半导体衬底上形成栅极堆叠，其中栅极堆叠包括栅极电介质和位于栅极电介质上的栅电极。与栅叠层相邻的半导体衬底的一部分被凹入以形成凹部。半导体区域在凹槽中外延生长。半导体区域注入p型杂质或n型杂质。在半导体区域进行干法处理。

3. 发明申请

US20130146993A1 SEMICONDUCTOR STRUCTURE HAVING A POLYSILICON STRUCTURE AND METHOD OF FORMING SAME 有权
标题翻译：具有多晶硅结构的半导体结构及其形成方法
公开(公告)号：US20130146993A1
公开(公告)日：2013-06-13
申请号：US13314462
申请日：2011-12-08
申请人： Che-Cheng CHANG , Po-chi WU , Buh-Kuan FANG , Jr-Jung LIN , Ryan Chia-Jen CHEN
发明人： Che-Cheng CHANG , Po-chi WU , Buh-Kuan FANG , Jr-Jung LIN , Ryan Chia-Jen CHEN
IPC分类号： H01L29/78 , H01L21/28
CPC分类号： H01L21/28114 , H01L21/02071 , H01L21/32135 , H01L29/42376 , H01L29/66545 , H01L29/7843
摘要： The present application discloses a method of forming a semiconductor structure. In at least one embodiment, the method includes forming a polysilicon layer over a substrate. A mask layer is formed over the polysilicon layer. The mask layer is patterned to form a patterned mask layer. A polysilicon structure is formed by etching the polysilicon layer using the patterned mask layer as a mask. The polysilicon structure has an upper surface and a lower surface, and the etching of the polysilicon layer is arranged to cause a width of the upper surface of the polysilicon structure greater than that of the lower surface of the polysilicon structure.
摘要翻译：本申请公开了一种形成半导体结构的方法。在至少一个实施例中，该方法包括在衬底上形成多晶硅层。在多晶硅层上形成掩模层。图案化掩模层以形成图案化掩模层。通过使用图案化掩模层作为掩模蚀刻多晶硅层来形成多晶硅结构。多晶硅结构具有上表面和下表面，并且多晶硅层的蚀刻被布置成使得多晶硅结构的上表面的宽度大于多晶硅结构的下表面的宽度。

4. 发明申请

US20120244813A1 BLUETOOTH EARPHONE 有权
标题翻译：蓝牙耳机
公开(公告)号：US20120244813A1
公开(公告)日：2012-09-27
申请号：US13243054
申请日：2011-09-23
申请人： JUI-CHI LIAO , CHI-HSIANG CHEN , CHE-CHENG CHANG
发明人： JUI-CHI LIAO , CHI-HSIANG CHEN , CHE-CHENG CHANG
IPC分类号： H04W88/00
CPC分类号： H04R1/1091 , H04R2420/07
摘要： A Bluetooth earphone includes a main body, an earpiece disposed at one side of the main body, an ear hanger, a power unit, and first and second rotating shafts. The ear hanger includes a first end portion disposed on the earpiece, a bent-back portion bent from the first end portion, and a second end portion extending from the bent-back portion. The power unit includes a battery set disposed removably on the second end portion of the ear hanger, and a transmission cable electrically connected to the main body and the battery set. The first rotating shaft unit connects the earpiece pivotally to the main body. The second rotating shaft unit connects the ear hanger pivotally to the earpiece. The Bluetooth earphone is adjustable to be worn on the left or right ear of a user, and is convenient to replace the battery set.
摘要翻译：蓝牙耳机包括主体，设置在主体一侧的听筒，耳挂架，动力单元以及第一和第二旋转轴。耳吊具有设置在听筒上的第一端部，从第一端部弯曲的弯曲部，以及从弯曲部延伸的第二端部。动力单元包括可拆卸地设置在耳挂架的第二端部的电池组，以及电连接到主体和电池组的传输电缆。第一旋转轴单元将耳机枢转地连接到主体。第二旋转轴单元将耳挂枢转地连接到耳机。蓝牙耳机可调，可佩戴在用户的左耳或右耳，方便更换电池组。

5. 发明授权

US08574989B2 Semiconductor structure having a polysilicon structure and method of forming same 有权
标题翻译：具有多晶硅结构的半导体结构及其形成方法
公开(公告)号：US08574989B2
公开(公告)日：2013-11-05
申请号：US13314462
申请日：2011-12-08
申请人： Che-Cheng Chang , Po-Chi Wu , Buh-Kuan Fang , Jr-Jung Lin , Ryan Chia-Jen Chen
发明人： Che-Cheng Chang , Po-Chi Wu , Buh-Kuan Fang , Jr-Jung Lin , Ryan Chia-Jen Chen
IPC分类号： H01L21/336
CPC分类号： H01L21/28114 , H01L21/02071 , H01L21/32135 , H01L29/42376 , H01L29/66545 , H01L29/7843
摘要： The present application discloses a method of forming a semiconductor structure. In at least one embodiment, the method includes forming a polysilicon layer over a substrate. A mask layer is formed over the polysilicon layer. The mask layer is patterned to form a patterned mask layer. A polysilicon structure is formed by etching the polysilicon layer using the patterned mask layer as a mask. The polysilicon structure has an upper surface and a lower surface, and the etching of the polysilicon layer is arranged to cause a width of the upper surface of the polysilicon structure greater than that of the lower surface of the polysilicon structure.
摘要翻译：本申请公开了一种形成半导体结构的方法。在至少一个实施例中，该方法包括在衬底上形成多晶硅层。在多晶硅层上形成掩模层。图案化掩模层以形成图案化掩模层。通过使用图案化掩模层作为掩模蚀刻多晶硅层来形成多晶硅结构。多晶硅结构具有上表面和下表面，并且多晶硅层的蚀刻被布置成使得多晶硅结构的上表面的宽度大于多晶硅结构的下表面的宽度。

6. 发明申请

US20110080301A1 POWERLINE NETWORK SYSTEM HAVING DATA RELAY FUNCTION 有权
标题翻译：具有数据继电器功能的POWERLINE网络系统
公开(公告)号：US20110080301A1
公开(公告)日：2011-04-07
申请号：US12572657
申请日：2009-10-02
申请人： Che-Cheng Chang , Hao-Jan Chiang , Chih-Pin Shih
发明人： Che-Cheng Chang , Hao-Jan Chiang , Chih-Pin Shih
IPC分类号： G08C19/16 , H04L25/20 , H04L27/00
CPC分类号： H04B3/58 , H04B3/544 , H04B2203/5445
摘要： A powerline network system having data relay function includes a plurality of power monitoring zones mutually connected with a powerline network and at least one repeater. Each of the power monitoring zones has at least one power monitoring device. The repeater is connected with each power monitoring device in two adjacent power monitoring zones through powerlines and has a first and a second relay units. The first and second relay units employ two different sets of transmitting and receiving bands to fetch data contained in powerline signals transmitted by each power monitor in adjacent power monitoring zones. The data are received by a relay unit are modulated with different transmitting band and then transmitted to powerlines of another power monitoring zone. The repeaters are not required to be serially connected to the powerlines, and incorrect data read can be also eliminated.
摘要翻译：具有数据中继功能的电力线网络系统包括与电力线网络和至少一个中继器相互连接的多个电力监控区域。每个电力监控区具有至少一个电力监控装置。中继器通过电力线与两个相邻电力监控区域中的每个电力监控设备连接，并具有第一和第二继电器单元。第一和第二中继单元使用两组不同的发射和接收频带来获取由相邻电力监测区域中的每个功率监视器发送的电力线信号中包含的数据。由中继单元接收的数据以不同的发送频带进行调制，然后发送到另一个电力监控区域的电力线。中继器不需要串联连接到电力线上，也可以消除不正确的数据读取。

7. 发明授权

US08248229B2 Powerline network system having data relay function 有权
标题翻译：具有数据中继功能的电力线网系统
公开(公告)号：US08248229B2
公开(公告)日：2012-08-21
申请号：US12572657
申请日：2009-10-02
申请人： Che-Cheng Chang , Hao-Jan Chiang , Chih-Pin Shih
发明人： Che-Cheng Chang , Hao-Jan Chiang , Chih-Pin Shih
IPC分类号： G08B1/08
CPC分类号： H04B3/58 , H04B3/544 , H04B2203/5445
摘要： A powerline network system having data relay function includes a plurality of power monitoring zones mutually connected with a powerline network and at least one repeater. Each of the power monitoring zones has at least one power monitoring device. The repeater is connected with each power monitoring device in two adjacent power monitoring zones through powerlines and has a first and a second relay units. The first and second relay units employ two different sets of transmitting and receiving bands to fetch data contained in powerline signals transmitted by each power monitor in adjacent power monitoring zones. The data are received by a relay unit are modulated with different transmitting band and then transmitted to powerlines of another power monitoring zone. The repeaters are not required to be serially connected to the powerlines, and incorrect data read can be also eliminated.
摘要翻译：具有数据中继功能的电力线网络系统包括与电力线网络和至少一个中继器相互连接的多个电力监控区域。每个电力监控区具有至少一个电力监控装置。中继器通过电力线与两个相邻电力监控区域中的每个电力监控设备连接，并具有第一和第二继电器单元。第一和第二中继单元使用两组不同的发射和接收频带来获取由相邻电力监测区域中的每个功率监视器发送的电力线信号中包含的数据。由中继单元接收的数据以不同的发送频带进行调制，然后发送到另一个电力监控区域的电力线。中继器不需要串联连接到电力线上，也可以消除不正确的数据读取。

8. 发明申请

US20090315409A1 SAFETY SOCKET 审中-公开
标题翻译：安全插座
公开(公告)号：US20090315409A1
公开(公告)日：2009-12-24
申请号：US12362024
申请日：2009-01-29
申请人： William R. Wheeler , Chien-Long Lin , Shiann-Chang Yeh , Chien-Hong Lin , Che-Cheng Chang
发明人： William R. Wheeler , Chien-Long Lin , Shiann-Chang Yeh , Chien-Hong Lin , Che-Cheng Chang
IPC分类号： H02H3/40
CPC分类号： H01R13/665 , H01R13/6683 , H02H3/42 , Y10T307/832
摘要： A digital automatic monitoring and power breaking safety socket has a shell in which an electrical connection base is mounted for connecting to a power line and an external line plug inside. A power switch is connected in series between the electrical connection base and the power line. A digital power monitoring circuit is coupled to the power line detect the power status to control the power switch based on the power status. Further, a power line data communication circuit is mounted in the shell and connects to the digital power monitoring circuit to obtain and process the power status. The processed power status is loaded into the power line that connects to the electrical connection base. Therefore, in addition to automatic power breaking and supplying, a remote power management host is able to obtain the power status and remotely control the socket.
摘要翻译：数字自动监测和断电安全插座具有壳体，其中安装有电连接基座用于连接到电力线和外部线路插头。电源开关串联在电气连接基座和电源线之间。数字电源监控电路耦合到电源线，根据电源状态检测电源状态，控制电源开关。此外，电源线数据通信电路安装在外壳中并连接到数字电源监控电路以获得并处理电源状态。处理后的电源状态被加载到连接到电气连接基座的电力线上。因此，除了自动断电和供电之外，远程电源管理主机能够获得电源状态并远程控制插座。

9. 发明授权

US08642435B2 Performing treatment on stressors 有权
标题翻译：对压力源进行治疗
公开(公告)号：US08642435B2
公开(公告)日：2014-02-04
申请号：US13349969
申请日：2012-01-13
申请人： Che-Cheng Chang , Po-Chi Wu , Chang-Yin Chen , Zhe-Hao Zhang , Yi-Chen Huang
发明人： Che-Cheng Chang , Po-Chi Wu , Chang-Yin Chen , Zhe-Hao Zhang , Yi-Chen Huang
IPC分类号： H01L21/336
CPC分类号： H01L29/66636 , H01L21/823807 , H01L21/823814 , H01L29/165 , H01L29/6659 , H01L29/7833 , H01L29/7834 , H01L29/7848
摘要： A method includes forming a gate stack over a semiconductor substrate, wherein the gate stack includes a gate dielectric and a gate electrode over the gate dielectric. A portion of the semiconductor substrate adjacent to the gate stack is recessed to form a recess. A semiconductor region is epitaxially grown in the recess. The semiconductor region is implanted with a p-type impurity or an n-type impurity. A dry treatment is performed on the semiconductor region.
摘要翻译：一种方法包括在半导体衬底上形成栅极堆叠，其中栅极堆叠包括栅极电介质和位于栅极电介质上的栅电极。与栅叠层相邻的半导体衬底的一部分被凹入以形成凹部。半导体区域在凹槽中外延生长。半导体区域注入p型杂质或n型杂质。在半导体区域进行干法处理。

10. 发明授权

US06888891B2 Wavelet domain half-pixel motion compensation 失效
标题翻译：小波域半像素运动补偿
公开(公告)号：US06888891B2
公开(公告)日：2005-05-03
申请号：US10043363
申请日：2002-01-09
申请人： Fredrick Chang-Ching Lee , Jonason Che-Cheng Chang
发明人： Fredrick Chang-Ching Lee , Jonason Che-Cheng Chang
IPC分类号： H04N7/30 , G06T9/00 , H03M7/30 , H04N7/26 , H04N7/32 , H04N7/12
CPC分类号： H04N19/547 , H04N19/523 , H04N19/61 , H04N19/619 , H04N19/63 , H04N19/645
摘要： A wavelet domain half-pixel motion compensation process that reduces aliasing effects that down sampling causes in the wavelet transform uses an H-transform and provides motion estimation and compensation in wavelet domain without requiring an inverse wavelet transform. For encoding, a q-dimensional (e.g., q=2) H-transform is applied in a conventional manner to non-overlapping q×q matrices in a first frame. When determining motion vectors for a second frame, “half-pixel” interpolation of the wavelet data of the first frame determines generates half-pixel data corresponding to q×q space-domain matrices that are offset (e.g., 1 pixel) horizontally and/or vertically from the q×q matrices that were transformed. Motion estimation techniques can then identify object motion by comparing wavelet domain object data in one frame to actual and interpolated wavelet domain data for another frame. Half-pixel interpolation or data generation can be combined with multi-resolution motion estimation in a high-performance wavelet video encoder.
摘要翻译：小波域半像素运动补偿过程减少了小波变换中的下采样造成的混叠效应，使用H变换，并且在小波域中提供运动估计和补偿，而不需要逆小波变换。对于编码，以常规方式将q维（例如，q = 2）H变换应用于第一帧中的非重叠qxq矩阵。当确定第二帧的运动矢量时，第一帧的小波数据的“半像素”插值确定产生对应于水平和/或垂直偏移（例如，1像素）的qxq空间域矩阵的半像素数据从被转换的qxq矩阵。运动估计技术可以通过将一帧中的小波域对象数据与另一帧的实际和内插小波域数据进行比较来识别对象运动。半像素内插或数据生成可以与高性能小波视频编码器中的多分辨率运动估计相结合。

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