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    • 1. 发明申请
    • SOLAR CELL HAVING A SPECIAL BUSBAR SHAPE, SOLAR CELL ARRANGEMENT CONTAINING SAID SOLAR CELL, AND METHOD FOR PRODUCING THE SOLAR CELL
    • 具有特殊BUSBARFORM这种太阳能电池含太阳能电池装置及其制造方法太阳能电池太阳能电池
    • WO2011107089A3
    • 2012-05-03
    • PCT/DE2011075005
    • 2011-01-18
    • CELLS SE QPFENNIG ANDREASFAULWETTER-QUANDT BJOERNHUBERT ANDREAS
    • PFENNIG ANDREASFAULWETTER-QUANDT BJOERNHUBERT ANDREAS
    • H01L31/0224H01L31/05
    • H01L31/022433H01L31/0201H01L31/0504Y02E10/50
    • The invention relates to a solar cell (1), comprising a substrate (2), a semiconductor layer (3), a first busbar (4) on a first surface (5) of the semiconductor layer (3), and a second busbar (6) on a second surface (7) of the semiconductor layer (3), wherein the first busbar (4) has contact pads (9, 9') along a connecting line (8), said contact pads having a maximum width blmax perpendicular to the connecting line (8), a current collecting area (10) being located between the contact pads on the connecting line (8), the current collecting area contacting the contact pads (9, 9') in a contact area (11), wherein the contact area (11) has two outer points (P1) and (P2) on both sides of the connecting line (8), the distance of which outer points perpendicular to the connecting line (8) defines a maximum width bSmax of the current collecting area (10), wherein blmaxSmax, and the width b of the current collecting area (10), starting from one contact pad (9) to an adjacent contact pad (9'), first decreases to a minimum width bSmin between two inner points (P3) and (P4) and then increases again to the adjacent contact pad (9') to a maximum width bSmax'.
    • 本发明涉及(1),包括基底(2),半导体层(3),第一汇流条(4)上的第一表面(5)的半导体层(3)和第二母线(6)上的第二表面的太阳能电池 ,(7)的半导体层(3),其中,所述第一汇流条(4)沿一连接线(8)的接触垫(9,9“)具有最大宽度blmax垂直于连接线(8),其在连接线之间(8 )每一个具有集电区(10)中,由所述接触垫(9,9“接触)(在接触区域11),其中所述接触区域(11)具有两个外点(在连接线(8的两侧),P1)和(P2) 其限定垂直于连接线的距离(8)具有集电区的最大宽度bSmax(10),所述blmaxSmax适用,和宽度b由一个接触垫(9)开始到相邻的接触垫(9“)的集电区(10)的 先达 到两个内点(P3)和(P4),然后降低到相邻的接触垫(9“)返回到的最大宽度bSmax”增大之间的最小宽度BSmin。
    • 4. 发明申请
    • METHOD FOR PRODUCING A SEMICONDUCTOR SOLAR CELL
    • 法半导体太阳能电池的
    • WO2011116762A2
    • 2011-09-29
    • PCT/DE2011075032
    • 2011-02-28
    • CELLS SE QENGELHART PETERSEGUIN ROBERTERDMANN MATTHIAS
    • ENGELHART PETERSEGUIN ROBERTERDMANN MATTHIAS
    • H01L31/18
    • H01L31/068H01L31/02363H01L31/1868Y02E10/547Y02P70/521
    • The invention relates to a method for producing a semiconductor solar cell (1), comprising the following method steps: providing a semiconductor substrate (2) of the semiconductor solar cell (1); producing a passivation double layer (3, 4) on a surface (22) of the semiconductor substrate (2) in that a first dielectric layer (3) made of a first dielectric material is applied to the surface (22) of the semiconductor substrate (2) and a second dielectric layer (4) made of a second dielectric material different from the first dielectric material is applied to the first dielectric layer (3); and a further production step, comprising at least one, two, or three of the following process steps: a texturing step; a diffusion step; and an etching step, wherein the passivation double layer (3, 4) acts as a barrier layer and protects the semiconductor substrate (2) lying directly below the passivation double layer during the further production step and wherein the passivation double layer (3, 4) is used as a passivation layer in the finished semiconductor solar cell (1).
    • 本发明涉及一种半导体的太阳能电池(1)的制造方法,包括以下步骤:提供半导体衬底的半导体太阳能电池的(2)(1); 通过第一电介质层(2)Hableitersubstrats的表面(22)上产生一个Passivierungsdoppelschicht(3,4)(3)的表面上的第一介电材料(22)Hableitersubstrats的(2)被施加,并且(第一介电层上 3)第二介电层(4)由从所述第一电介质材料不同的第二电介质材料施加; 和进一步的制造步骤,包括至少一个,两个或三个的下列工艺步骤:a纹理步骤; 一个扩散步骤; 和蚀刻步骤,其中,所述Passivierungsdoppelschicht(3,4)用作进一步的制造步骤期间的阻挡层和紧接着的下面的半导体(2)基板保护,并且其中所述Passivierungsdoppelschicht(3,4)在完成的半导体太阳能电池(1)用作钝化层。
    • 5. 发明申请
    • SOLAR CELL STRING AND SOLAR MODULE HAVING SUCH A SOLAR CELL STRING
    • 太阳能电池串及太阳能电池组件这样的太阳能电池组
    • WO2010091680A3
    • 2011-09-15
    • PCT/DE2010075003
    • 2010-01-11
    • CELLS SE QPFENNIG ANDREAS
    • PFENNIG ANDREAS
    • H01L31/02H01L31/05
    • H01L31/0504H01L31/0508Y02E10/50
    • The invention relates to a solar cell string having a solar cell (1), formed by a wafer substrate (10) having a flat electrode contact segment (11), having a further solar cell (2) disposed adjacent to the solar cell (1), formed by a further wafer substrate (20) having a further flat electrode contact segment (21) and at least one cell connector (3) having a cell connector width and a cell connector thickness (3d) oriented substantially perpendicular to the electrode contact segments (11, 21), said connector extending along an extension direction (E) from the electrode contact segment (11) of the solar cell (1) to the further electrode contact segment (21) of the further solar cell (2), wherein the cell connector (3) electrically connects electrodes of the solar cell (1) to further electrodes of the further solar cell (2). According to the invention, the cell connector thickness (3d) of the linear cell connector (3) tapers down at least in segments along the extension direction (E) thereof, starting from the solar cell (1), in the direction of the further solar cell (2).
    • 本发明涉及的太阳能电池串具有从与平面电极接触部分(11)的晶片衬底(10)形成的太阳能电池(1),布置成与相邻的太阳能电池(1)还太阳能电池(2)形成的另一晶片衬底的( 20)(与由用于(2)延伸的带状的其他太阳能电池单元的另外的电极接触部分(21)的太阳能电池(1)的电极接触部分(11)的面积进一步电极接触部21)和至少一个是(沿延伸方向E) 电池连接器(3)的面向与电池连接器的宽度和一个基本上垂直于电极接触部分(11,21)的电池连接器的厚度(3d)中,其中,所述电池连接器(3)太阳能电池的电极(1)电连接到另一太阳能电池的另一个电极(2) 互联。 根据本发明,它提供的是,电池连接器厚度(3D)被认为是带状电池连接器(3)沿其(E)延伸的方向,从在部分增加另一个太阳能电池(2)至少方向的太阳能电池(1)开始。
    • 6. 发明申请
    • THIN-LAYER SOLAR MODULE HAVING IMPROVED INTERCONNECTION OF SOLAR CELLS AND METHOD FOR THE PRODUCTION THEREOF
    • 具有改进的太阳能电池互连的薄层太阳能模块及其生产方法
    • WO2011009860A3
    • 2011-07-21
    • PCT/EP2010060481
    • 2010-07-20
    • CELLS SE QVERDUGO VICTOR
    • VERDUGO VICTOR
    • H01L27/142
    • H01L31/202H01L31/0463H01L31/0465Y02E10/50Y02P70/521
    • The invention relates to a thin-layer solar module 1 containing a plurality of interconnected solar cells 2, comprising in the order indicated the layers (a) a substrate 3; (b) a first electrode layer 4; (c) a semiconductor layer 5; and (d) a second electrode layer 6; wherein at least one non-linear recess 7 is disposed in the first electrode layer 4 and a second non-linear recess 8 is disposed in the second electrode layer 6 and in the semiconductor layer 5, wherein a first projection 9 of the first non-linear recess 7 onto the substrate 3 and a second projection 10 of the second non-linear recess 8 onto the substrate 3 intersect or contact each other at at least two projection points 14,15, the thin-layer solar module 1 has at least one island-shaped contact region 11 extending in a direction vertical to the substrate 3 through the layers (a) through (d) 3,4,5,6 and bounded in a direction parallel to the substrate 3 by the first projection 9 and the second projection 10, and wherein a third recess 12 is present in the semiconductor layer 5 within the island-shaped contact region 11 and is filled with an electrically conductive material, and a fourth recess 20 extending through the first electrode layer 4, the semiconductor layer 5, and the second electrode later 6 between at least two island-shaped contact regions 11. The invention further relates to a method for producing said thin-layer solar module.
    • 本发明涉及一种包含多个互连的太阳能电池2的薄膜太阳能电池组件1,所述薄膜太阳能电池组2依次包括:(a)基板3; (b)第一电极层4; (c)半导体层5; 和(d)第二电极层6; 其中,所述第一电极层4中,至少一个第一非线性凹部7被布置和一个第二非线性凹部8被设置在第二电极层6与半导体层5,其中,所述第一非线性凹部7的第一突出部9与基板3和一个在 在至少两个投影点或触摸的第二非线性凹部8的第二突起10相交14,15到衬底3,薄膜太阳能电池模块1包括至少一个岛形接触部11的方向上横跨所述层延伸的垂直于衬底3的方向(a)中 延伸,以及(d)3,4,5,6-由第一突出部9和第二突起10限定在平行的方向上与基板3的方向,并位于半导体层5中的岛形接触部11,第三凹部12内 ,其填充有导电材料和第四Au 窥探20在至少两个岛状接触区域11之间延伸穿过第一电极层4,半导体层5和第二电极层6。 本发明还涉及用于制造该薄膜太阳能模块的方法。
    • 8. 发明申请
    • SOLAR CELL SYSTEM, SOLAR CELL MODULE, AND METHOD FOR PRODUCING A SOLAR CELL SYSTEM
    • 太阳系里,对于制造太阳能系统的太阳能电池组件和方法
    • WO2010063540A3
    • 2011-04-07
    • PCT/EP2009064935
    • 2009-11-10
    • CELLS SE QMUELLER JOERGSEDLACEK MICHAELTRAEGER MARKUS
    • MUELLER JOERGSEDLACEK MICHAELTRAEGER MARKUS
    • H01L31/05
    • H01L31/05Y02E10/50
    • The invention relates to a solar cell system (7), to a solar cell module, and to a method for producing a solar cell system (7), wherein a solar cell (3) is provided with a contact (31) which is electrically connected to a first connector area (13) of a connector (1), and a further solar cell (5) is provided with a further contact (51) which is electrically connected to a second connector area (15) of the connector (1) in such a way that the connector (1) forms an electrical connection between the two contacts (31, 51), wherein the connector (1) is composed of at least two different metals and/or metal alloys, the first connector area (13) is composed substantially of a first of the two metals and/or metal alloys, and the second connector area (15) is composed substantially of a second of the two metals and/or metal alloys.
    • 在太阳能电池系统(7),太阳能电池模块和用于制造太阳能电池的系统(7)的方法是一个太阳能电池(3)与连接至连接器的第一连接器部分(13)的接触(31)(1)电连接和一个 多个太阳能电池(5)设置有设置有连接器的第二连接器部分(15)进一步的接触(51)电连接(1)是这样的连接器(1)的两个触点之间的电连接(31,51) 形式,其中,所述连接器(1)由至少两种不同的金属和/或金属合金,并从两种金属和/或金属合金的第二基本上基本上由第一和第二连接器部分(15)的第一连接器部分(13)组成 ,
    • 9. 发明申请
    • SOLAR CELL AND METHOD FOR PRODUCING SAME
    • 太阳能电池和方法生产同样
    • WO2013013666A2
    • 2013-01-31
    • PCT/DE2012100189
    • 2012-06-26
    • CELLS SE QSTEKOLNIKOV ANDREYSEGUIN ROBERTKOENTOPP MAXSCHERFF MAXIMILIANENGELHART PETERHEIMANN MATTHIASBARTEL TILTRAEGER MARKUS
    • STEKOLNIKOV ANDREYSEGUIN ROBERTKOENTOPP MAXSCHERFF MAXIMILIANENGELHART PETERHEIMANN MATTHIASBARTEL TILTRAEGER MARKUS
    • H01L31/0224
    • H01L31/02008H01L31/02167H01L31/022425H01L31/068Y02E10/547
    • The present invention relates to a solar cell (1) comprising a semiconductor wafer (3), at least one dielectric layer (5) arranged on the semiconductor wafer (3), a metal layer (7) arranged on the dielectric layer, and a contact structure arranged in the dielectric layer (5) such that the contact structure provides an electrical connection between the metal layer (7) and the semiconductor wafer (3), wherein the contact structure has at least one first structure (9a) having a minimum dimension and at least one second structure (9b) having a maximum dimension, wherein the minimum dimension and the maximum dimension are defined along a surface of the semiconductor wafer (3) and the minimum dimension of the first structure (9a) is greater than the maximum dimension of the second structure (9b). Furthermore, the present invention relates to a solar cell production method, comprising the following method steps: providing a semiconductor wafer (3) with at least one dielectric layer (5), forming a metal layer (7) on the dielectric layer (5) and a contact structure arranged in the dielectric layer (5), such that the contact structure provides an electrical connection between the metal layer (7) and the semiconductor wafer (3), wherein at least one first structure (9a) having a minimum dimension and at least one second structure (9b) having a maximum dimension are formed as contact structure, such that the minimum dimension of the first structure (9a) is greater than the maximum dimension of the second structure (9b).
    • 本发明涉及(1),其包括在半导体晶片(3),布置(3)的电介质层(5),设置在所述电介质层上的一个半导体晶片上的至少一个太阳能电池的金属层(7)和所述电介质层中的接触结构 (5)被布置成使得所述接触结构提供金属层(7)与半导体晶片(3),其中,所述接触结构包括至少一个第一结构(图9a)之间的电连接具有最小尺寸,并且具有的最大尺寸的至少第二结构(图9B) ,其中,所述最小尺寸,并沿着所述半导体晶片(3)和所述第一结构(图9a)的最小尺寸的表面所限定的最大尺寸小于所述第二结构的最大尺寸大(图9b)。 此外,本发明的太阳能电池制造工艺,包括以下步骤的担忧:提供半导体晶片(3)具有至少一个电介质层(5),形成电介质层在所述电介质层(5)和一个接触结构上的金属层(7) (5)被布置成使得所述接触结构提供金属层(7)与半导体晶片(3)之间的电连接,其中,至少一个第一结构(图9a),其具有最小尺寸,并且具有的最大尺寸为接触结构中的至少一个第二结构(图9B) 被形成为使得所述第一结构(图9a)的最小尺寸小于所述第二结构(图9B)的最大尺寸。
    • 10. 发明申请
    • METHOD FOR PRODUCING SOLAR CELLS AND METHOD FOR PRODUCING SOLAR MODULES
    • 工艺用于制造太阳能电池和方法太阳能电池组件生产
    • WO2011069500A3
    • 2012-07-19
    • PCT/DE2010075145
    • 2010-11-25
    • CELLS SE QBARTEL TILPLOIGT HANS-CHRISTOPHSTENZEL FLORIANMOHR ANDREASGUNDERMANN MATTHIASZERRES ANKE
    • BARTEL TILPLOIGT HANS-CHRISTOPHSTENZEL FLORIANMOHR ANDREASGUNDERMANN MATTHIASZERRES ANKE
    • H01L31/0224
    • H01L31/022425C23C18/14H01L31/1804Y02E10/547Y02P70/521
    • The invention relates to a method for producing a solar cell, comprising the following steps: making a semiconductor wafer available which has a front side and a rear side, said wafer being selected from the group consisting of: a p-type semiconductor wafer having a p-type base and an n-doped front side emitter which has a value of 70 ohm/sq or more, preferably 90 ohm/sq, and especially preferred more than 110 ohm/sq, and/or which has a surface concentration of less than 1020 doping atoms/cm3, preferably less than 5x1019 doping atoms /cm3, an n-type semiconductor wafer having an n-type base, an n-type front side section for the front side contact of the n-type base and a p-type emitter, an n-type semiconductor waver having an n-type base and a p-doped 40 ohm/sq or more front side emitter and an n-type semiconductor wafer having an n-type base and a p-doped emitter structure for the rear side contact or a p-type semiconductor wafer having a p-type base and an n-doped emitter structure for rear side contact, applying a seed layer structure (4a) for a multilayer electrode structure to the front side or to the rear side of the semiconductor wafer, baking the semiconductor wafer for baking the seed layer structure (4a) to give baked seed layer structures (4b), electrodepositing metal onto the baked seed layers (4b) to produce a multilayer electrode structure (4b, 4c) and applying a rear side metallization onto the rear side of the semiconductor layer to give a rear side electrode structure corresponding to the multilayer electrode structure, the semiconductor waver not being exposed to a reducing atmosphere at a temperature of more than 200°C neither between the step of baking and the step of electrodeposition nor after the step of electrodeposition, thereby allowing the production of an electrical contact of the quality 2 solely by the electrodeposition of a metal for example onto a high-resistivity (>70 ohm/sq) semiconductor wafer.
    • 本发明涉及一种用于制造包括以下步骤的太阳能电池的方法,包括:p型半导体晶片具有p型基极和n型掺杂的前侧:提供具有前侧和后侧的半导体晶片,选自以下组成的组中选择的 发射器具有超过70欧姆/平方,优选超过90欧姆/平方和最优选大于110欧姆/平方和/或小于1020掺杂剂原子/ cm 3,优选小于5×1019掺杂剂原子/ cm 3的表面浓度的Ohmigkeit, 具有n型基极,n型前侧部到n型基极的前侧接触和p型发射极,具有n型基极的n型半导体晶片和n型半导体晶片 p型掺杂的前侧具有超过40欧姆/平方的发射极Ohmigkeit和具有n型基极和背面侧的p掺杂发射极结构或p型Halbleiterw n型半导体晶片 AFER具有p型基极和背面侧的n型掺杂的发射极结构,施加Saatschichtstruktur(4A),用于在前面或在半导体晶片的背面上的多层电极结构,焙烧所述半导体晶片的烘烤Saatschichtstruktur(4a)中要烧制的籽晶层 (4b)中的金属电沉积到烧成种子层(4B),用于产生多层电极结构(4B,4C)和在所述半导体晶片的背面,半导体晶片既不施加背侧用于对应的多层电极结构的背面电极结构 还原在超过200℃的温度气氛中焙烧的步骤,并且电沉积的或电沉积的步骤之后的步骤之间进行。 以这种方式,生产单独善良2的电接触通过金属的电沉积,例如,在高电阻率的(> 70欧姆/平方)的半导体晶片成为可能。