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1. 发明申请

US20100176379A1 SELF-ALIGNED ORGANIC THIN FILM TRANSISTOR AND FABRICATION METHOD THEREOF 审中-公开
标题翻译：自对准有机薄膜晶体管及其制造方法
公开(公告)号：US20100176379A1
公开(公告)日：2010-07-15
申请号：US12278120
申请日：2008-05-30
申请人： Kang Dae Kim , Taik Min Lee , Hyeon Cheol Choi , Dong Soo Kim , Byun Oh Choi
发明人： Kang Dae Kim , Taik Min Lee , Hyeon Cheol Choi , Dong Soo Kim , Byun Oh Choi
IPC分类号： H01L51/10 , H01L51/40
CPC分类号： H01L51/0545 , H01L51/0015 , H01L51/0021 , H01L51/0023 , H01L51/102
摘要： The present invention relates to a self-aligned organic thin film transistor (TFT) and a fabrication method thereof. According to the present invention, a gate electrode is formed from a first conductive layer patterned on a substrate, a gate dielectric layer is formed on top of the substrate to cover the gate electrode, and a second conductive layer is then formed on the gate dielectric layer. Subsequently, ultraviolet (UV) backside exposure for irradiating the second conductive layer with UV from a bottom side of the substrate using the gate electrode as a mask, and source/drain electrodes self-aligned with the gate electrode is then formed not to overlap with the gate electrode by developing the second conductive electrode. Thereafter, an organic semiconductor layer is formed between and on the source/drain electrodes. In the present invention, an organic TFT can be fabricated using a reel-to-reel process, and therefore, the fabrication process can be simplified.
摘要翻译：本发明涉及一种自对准有机薄膜晶体管（TFT）及其制造方法。根据本发明，栅极电极由图案化在基板上的第一导电层形成，栅极电介质层形成在基板的顶部以覆盖栅电极，然后在栅极电介质上形成第二导电层层。随后，使用栅电极作为掩模从基板的底侧用UV照射第二导电层的紫外（UV）背面曝光，以及与栅电极自对准的源/漏电极，然后形成为不与通过显影第二导电电极来形成栅电极。此后，在源极/漏极之间和之间形成有机半导体层。在本发明中，可以使用卷到盘工艺制造有机TFT，因此可以简化制造工艺。

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