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1. 发明公开

EP2807478A1 ISFET SENSOR ARRAY COMPRISING TITANIUM NITRIDE AS A SENSING LAYER LOCATED ON THE BOTTOM OF A MICROWELL STRUCTURE 有权转让
标题翻译： WITH氮化钛ISFET阵列传感器层ON微孔结构的底部
公开(公告)号：EP2807478A1
公开(公告)日：2014-12-03
申请号：EP13702546.6
申请日：2013-01-18
申请人： Life Technologies Corporation , Bustillo, James , Rearick, Todd , Hinz, Wolfgang , Fife, Keith
发明人： BUSTILLO, James , REARICK, Todd , HINZ, Wolfgang , FIFE, Keith
IPC分类号： G01N27/414
CPC分类号： B01L3/5027 , B01L3/502707 , B01L2200/0668 , B01L2300/0636 , B01L2300/0645 , B01L2300/0819 , B01L2300/0877 , B01L2300/0893 , G01N27/4145
摘要： A method of fabricating a microwell in an array structure is disclosed herein. The array structure can include a plurality of field effect transistors (FETs), where each FET has a gate structure. The method can include disposing a titanium nitride (TiN) layer on at least one conductive layer coupled to the gate structure of at least one FET. A insulation layer can also be disposed on the array structure, where the insulation layer lies above the TiN layer. Further, an opening above the gate structure of the at least one FET can be etched to remove the insulation layer above the gate structure and to expose the TiN layer. A microwell with at least one sidewall formed from the insulation layer and with a bottom surface formed from the TiN layer is a result of the etching process.

2. 发明授权

EP2805157B1 CHEMICAL SENSOR WITH CONDUCTIVE CUP-SHAPED SENSOR SURFACE 有权转让
标题翻译：具有导电杯形传感器表面的化学传感器
公开(公告)号：EP2805157B1
公开(公告)日：2017-07-12
申请号：EP13704843.5
申请日：2013-01-18
申请人： Life Technologies Corporation , Li, Shifeng , Bustillo, James , Hinz, Wolfgang
发明人： LI, Shifeng , BUSTILLO, James , HINZ, Wolfgang
IPC分类号： G01N27/414
CPC分类号： G01N27/4145 , C12Q1/6869 , G01N27/414 , Y10T436/143333
摘要： A system includes a sensor including a sensor pad and a well wall structure defining a well operatively coupled to the sensor pad. The well is further defined by a lower surface disposed over the sensor pad. The well wall structure defines an upper surface and defines a wall surface extending between the upper surface and the lower surface. The system further includes a conductive layer disposed over the lower surface and the wall surface.
摘要翻译：一种系统包括传感器，该传感器包括传感器垫和限定可操作地耦合到传感器垫的井的井壁结构。井由设置在传感器垫上的下表面进一步限定。井壁结构限定上表面并限定在上表面和下表面之间延伸的壁表面。该系统还包括设置在下表面和壁表面上的导电层。

3. 发明授权

EP2807478B1 ISFET SENSOR ARRAY COMPRISING TITANIUM NITRIDE AS A SENSING LAYER LOCATED ON THE BOTTOM OF A MICROWELL STRUCTURE 有权转让
公开(公告)号：EP2807478B1
公开(公告)日：2019-07-31
申请号：EP13702546.6
申请日：2013-01-18
申请人： Life Technologies Corporation , Bustillo, James , Rearick, Todd , Hinz, Wolfgang , Fife, Keith
发明人： BUSTILLO, James , REARICK, Todd , HINZ, Wolfgang , FIFE, Keith
IPC分类号： G01N27/414 , B01L3/00

4. 发明公开

EP2805157A2 CHEMICAL SENSOR WITH CONDUCTIVE CUP-SHAPED SENSOR SURFACE 有权转让
标题翻译： CHEMISCHER传感器麻省理工学院啤酒厂SENSOROBERFLÄCHE
公开(公告)号：EP2805157A2
公开(公告)日：2014-11-26
申请号：EP13704843.5
申请日：2013-01-18
申请人： Life Technologies Corporation , Li, Shifeng , Bustillo, James , Hinz, Wolfgang
发明人： LI, Shifeng , BUSTILLO, James , HINZ, Wolfgang
IPC分类号： G01N27/414
CPC分类号： G01N27/4145 , C12Q1/6869 , G01N27/414 , Y10T436/143333
摘要： A system includes a sensor including a sensor pad and a well wall structure defining a well operatively coupled to the sensor pad. The well is further defined by a lower surface disposed over the sensor pad. The well wall structure defines an upper surface and defines a wall surface extending between the upper surface and the lower surface. The system further includes a conductive layer disposed over the lower surface and the wall surface.
摘要翻译：一种系统包括传感器，其包括传感器垫和井壁结构，该结构限定了可操作地耦合到传感器垫的井。该阱还由设置在传感器垫上的下表面限定。井壁结构限定了上表面并限定了在上表面和下表面之间延伸的壁表面。该系统还包括设置在下表面和壁表面上的导电层。

5. 发明申请

WO2008076406A2 METHODS AND APPARATUS FOR MEASURING ANALYTES USING LARGE SCALE FET ARRAYS 审中-公开
标题翻译：使用大规模FET阵列测量分析仪的方法和装置
公开(公告)号：WO2008076406A2
公开(公告)日：2008-06-26
申请号：PCT/US2007/025721
申请日：2007-12-14
申请人： ION TORRENT SYSTEMS INCORPORATED , ROTHBERG, Jonathan, M. , HINZ, Wolfgang , JOHNSON, Kim, L. , BUSTILLO, James
发明人： ROTHBERG, Jonathan, M. , HINZ, Wolfgang , JOHNSON, Kim, L. , BUSTILLO, James
IPC分类号： G01N27/414 , G01N33/543
CPC分类号： G01N27/4148 , C12Q1/6818 , C12Q1/6874 , G01N27/4145 , G01N33/54373 , G01N33/5438 , H01L27/088 , H01L29/42324 , H01L29/78 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01073 , H01L2924/14 , H01L2924/1433 , Y10T436/22 , C12Q2565/607 , C12Q2565/301 , C12Q2533/101

6. 发明申请

WO2013109886A1 ISFET SENSOR ARRAY COMPRISING TITANIUM NITRIDE AS A SENSING LAYER LOCATED THE BOTTOM OF A MICROWELL STRUCTURE 审中-公开
标题翻译： ISFET传感器阵列包含硝酸铁作为传感层位于MICROWELL结构的底部
公开(公告)号：WO2013109886A1
公开(公告)日：2013-07-25
申请号：PCT/US2013/022140
申请日：2013-01-18
申请人： LIFE TECHNOLOGIES CORPORATION , BUSTILLO, James , REARICK, Todd , HINZ, Wolfgang , FIFE, Keith
发明人： BUSTILLO, James , REARICK, Todd , HINZ, Wolfgang , FIFE, Keith
IPC分类号： G01N27/414
CPC分类号： B01L3/5027 , B01L3/502707 , B01L2200/0668 , B01L2300/0636 , B01L2300/0645 , B01L2300/0819 , B01L2300/0877 , B01L2300/0893 , G01N27/4145
摘要： A method of fabricating a microwell in an array structure is disclosed herein. The array structure includes a plurality of field effect transistors (FETs), where each FET has a gate structure. The method includes disposing a titanium nitride (TiN) layer on at least one conductive layer coupled to the gate structure of at least one FET. A insulation layer is disposed on the array structure, where the insulation layer lies above the TiN layer. Further, an opening above the gate structure of the at least one FET is etched to remove the insulation layer above the gate structure and to expose the TiN layer. A microwell with at least one sidewall formed from the insulation layer and with a bottom surface formed from the TiN layer is a result of the etching process. The gate structure is specified as a floating gate structure and the FET is an ISFET.
摘要翻译：本文公开了一种制造阵列结构中的微孔的方法。阵列结构包括多个场效应晶体管（FET），其中每个FET具有栅极结构。该方法包括在耦合到至少一个FET的栅极结构的至少一个导电层上设置氮化钛（TiN）层。绝缘层设置在阵列结构上，其中绝缘层位于TiN层上方。此外，蚀刻至少一个FET的栅极结构之上的开口以去除栅极结构上方的绝缘层并暴露TiN层。具有由绝缘层形成的至少一个侧壁和由TiN层形成的底表面的微孔是蚀刻工艺的结果。栅极结构被指定为浮置栅极结构，FET是ISFET。

7. 发明申请

WO2010138182A2 METHODS AND APPARATUS FOR MEASURING ANALYTES 审中-公开
标题翻译：测量分析仪的方法和装置
公开(公告)号：WO2010138182A2
公开(公告)日：2010-12-02
申请号：PCT/US2010001543
申请日：2010-05-27
申请人： ION TORRENT SYSTEMS INC , ROTHBERG JONATHAN M , HINZ WOLFGANG , DAVIDSON JOHN F , VAN OIJEN ANTOINE M , LEAMON JOHN H , HUBER MARTIN , BUSTILLO JAMES M , MILGREW MARK JAMES , SCHULTZ JONATHAN , MARRAN DAVID , REARICK TODD , JOHNSON KIM L
发明人： ROTHBERG JONATHAN M , HINZ WOLFGANG , DAVIDSON JOHN F , VAN OIJEN ANTOINE M , LEAMON JOHN H , HUBER MARTIN , BUSTILLO JAMES M , MILGREW MARK JAMES , SCHULTZ JONATHAN , MARRAN DAVID , REARICK TODD , JOHNSON KIM L
IPC分类号： C40B20/00 , C12P19/34 , C12Q1/68 , C40B40/06 , C40B60/10
CPC分类号： G01N27/4145 , C12Q1/6869 , C12Q1/6874 , G01N27/27 , G01N27/414 , Y10T29/49002
摘要： Methods and apparatus relating to FET arrays including large FET arrays for monitoring chemical and/or biological reactions such as nucleic acid sequencing-by- synthesis reactions. Some methods provided herein relate to improving signal (and also signal-to-noise ratio) from released hydrogen ions during nucleic acid sequencing reactions.
摘要翻译：涉及FET阵列的方法和装置，包括用于监测化学和/或生物反应的大型FET阵列，例如通过合成反应的核酸测序。本文提供的一些方法涉及在核酸测序反应期间从释放的氢离子改进信号（以及信噪比）。

8. 发明申请

WO2010047804A8 INTEGRATED SENSOR ARRAYS FOR BIOLOGICAL AND CHEMICAL ANALYSIS 审中-公开
公开(公告)号：WO2010047804A8
公开(公告)日：2010-04-29
申请号：PCT/US2009/005745
申请日：2009-10-22
申请人： LIFE TECHNOLOGIES CORPORATION , ROTHBERG, Jonathan, M. , SCHULTZ, Jonathan, C. , JOHNSON, Kim, L. , REARICK, Todd, M. , MILGREW, Mark, James , MARRAN, David , BUSTILLO, James, M.
发明人： ROTHBERG, Jonathan, M. , SCHULTZ, Jonathan, C. , JOHNSON, Kim, L. , REARICK, Todd, M. , MILGREW, Mark, James , MARRAN, David , BUSTILLO, James, M.
IPC分类号： G01N27/416 , C12M1/34
摘要： The invention is directed to apparatus and chips comprising a large scale chemical field effect transistor arrays that include an array of sample-retaining regions capable of retaining a chemical or biological sample from a sample fluid for analysis. In one aspect such transistor arrays have a pitch of 10 μm or less and each sample-retaining region is positioned on at least one chemical field effect transistor which is configured to generate at least one output signal related to a characteristic of a chemical or biological sample in such sample-retaining region. In one embodiment, the characteristic of said chemical or biological sample is a concentration of a charged species and wherein each of said chemical field effect transistors is an ion-sensitive field effect transistor having a floating gate with a dielectric layer on a surface thereof, the dielectric layer contacting said sample fluid and being capable of accumulating charge in proportion to a concentration of the charged species in said sample fluid. In one embodiment such charged species is a hydrogen ion such that the sensors measure changes in pH of the sample fluid in or adjacent to the sample-retaining region thereof. Apparatus and chips of the invention may be adapted for large scale pH-based DNA sequencing and other bioscience and biomedical applications.

9. 发明申请

WO2013109886A8 ISFET SENSOR ARRAY COMPRISING TITANIUM NITRIDE AS A SENSING LAYER LOCATED ON THE BOTTOM OF A MICROWELL STRUCTURE 审中-公开
标题翻译： ISFET传感器阵列包含硝酸铁作为位于MICROWELL结构底部的传感层
公开(公告)号：WO2013109886A8
公开(公告)日：2014-02-27
申请号：PCT/US2013022140
申请日：2013-01-18
申请人： LIFE TECHNOLOGIES CORP , BUSTILLO JAMES , REARICK TODD , HINZ WOLFGANG , FIFE KEITH
发明人： BUSTILLO JAMES , REARICK TODD , HINZ WOLFGANG , FIFE KEITH
IPC分类号： G01N27/414
CPC分类号： B01L3/5027 , B01L3/502707 , B01L2200/0668 , B01L2300/0636 , B01L2300/0645 , B01L2300/0819 , B01L2300/0877 , B01L2300/0893 , G01N27/4145
摘要： A method of fabricating a microwell in an array structure is disclosed herein. The array structure includes a plurality of field effect transistors (FETs), where each FET has a gate structure. The method includes disposing a titanium nitride (TiN) layer on at least one conductive layer coupled to the gate structure of at least one FET. A insulation layer is disposed on the array structure, where the insulation layer lies above the TiN layer. Further, an opening above the gate structure of the at least one FET is etched to remove the insulation layer above the gate structure and to expose the TiN layer. A microwell with at least one sidewall formed from the insulation layer and with a bottom surface formed from the TiN layer is a result of the etching process. The gate structure is specified as a floating gate structure and the FET is an ISFET.
摘要翻译：本文公开了一种制造阵列结构中的微孔的方法。阵列结构包括多个场效应晶体管（FET），其中每个FET具有栅极结构。该方法包括在耦合到至少一个FET的栅极结构的至少一个导电层上设置氮化钛（TiN）层。绝缘层设置在阵列结构上，其中绝缘层位于TiN层上方。此外，蚀刻至少一个FET的栅极结构之上的开口以去除栅极结构上方的绝缘层并暴露TiN层。具有由绝缘层形成的至少一个侧壁和由TiN层形成的底表面的微孔是蚀刻工艺的结果。栅极结构被指定为浮置栅极结构，FET是ISFET。

10. 发明申请

WO2010047804A1 INTEGRATED SENSOR ARRAYS FOR BIOLOGICAL AND CHEMICAL ANALYSIS 审中-公开
标题翻译：用于生物和化学分析的集成传感器阵列
公开(公告)号：WO2010047804A1
公开(公告)日：2010-04-29
申请号：PCT/US2009005745
申请日：2009-10-22
申请人： ION TORRENT SYSTEMS INC , ROTHBERG JONATHAN M , SCHULTZ JONATHAN C , JOHNSON KIM L , REARICK TODD M , MILGREM MARK JAMES , MARRAN DAVID , BUSTILLO JAMES M
发明人： ROTHBERG JONATHAN M , SCHULTZ JONATHAN C , JOHNSON KIM L , REARICK TODD M , MILGREM MARK JAMES , MARRAN DAVID , BUSTILLO JAMES M
IPC分类号： G01N27/416 , C12M1/34
CPC分类号： G01N27/4145
摘要： The invention is directed to apparatus and chips comprising a large scale chemical field effect transistor arrays that include an array of sample-retaining regions capable of retaining a chemical or biological sample from a sample fluid for analysis. In one aspect such transistor arrays have a pitch of 10 µm or less and each sample-retaining region is positioned on at least one chemical field effect transistor which is configured to generate at least one output signal related to a characteristic of a chemical or biological sample in such sample-retaining region. In one embodiment, the characteristic of said chemical or biological sample is a concentration of a charged species and wherein each of said chemical field effect transistors is an ion-sensitive field effect transistor having a floating gate with a dielectric layer on a surface thereof, the dielectric layer contacting said sample fluid and being capable of accumulating charge in proportion to a concentration of the charged species in said sample fluid. In one embodiment such charged species is a hydrogen ion such that the sensors measure changes in pH of the sample fluid in or adjacent to the sample-retaining region thereof. Apparatus and chips of the invention may be adapted for large scale pH-based DNA sequencing and other bioscience and biomedical applications.
摘要翻译：本发明涉及包括大规模化学场效应晶体管阵列的装置和芯片，其包括能够保留来自样品流体的化学或生物样品用于分析的样品保持区阵列。在一个方面，这种晶体管阵列具有10μm或更小的间距，并且每个采样保持区域位于至少一个化学场效应晶体管上，该晶体管被配置为产生与化学或生物样品的特性相关的至少一个输出信号在这样的样品保留区域中。在一个实施方案中，所述化学或生物样品的特征是带电物质的浓度，并且其中每个所述化学场效应晶体管是离子敏感场效应晶体管，其具有在其表面上具有介电层的浮置栅极，电介质层与所述样品流体接触并且能够与所述样品流体中的带电物质的浓度成比例地积累电荷。在一个实施方案中，这种带电物质是氢离子，使得传感器测量样品流体在其样品保持区域中或其附近的pH值的变化。本发明的装置和芯片可适用于大规模的基于pH的DNA测序和其他生物科学和生物医学应用。

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