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    • 5. 发明申请
    • Memory cell and programmable logic having ferromagnetic structures exhibiting the extraordinary hall effect
    • 具有铁磁结构的存储单元和可编程逻辑具有非凡的霍尔效应
    • US20060176620A1
    • 2006-08-10
    • US11348124
    • 2006-02-06
    • Dafine RavelosonaBruce Terris
    • Dafine RavelosonaBruce Terris
    • G11B5/33
    • G11C11/18G11B5/193G11C11/5607
    • Memory cell structures make use of the extraordinary Hall effect (EHE) for increased data storage capacity. A memory cell has a ferromagnetic structure which includes at least a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer in between the first and the second ferromagnetic layers. The first and the second ferromagnetic layers exhibit perpendicular magnetic anisotropy and have magnetic moments which are set in accordance with one of a plurality of magnetic orientation sets of the ferromagnetic structure, and the ferromagnetic structure exhibits one of a plurality of predetermined extraordinary Hall resistances RH in accordance with the magnetic orientation set. The extraordinary Hall resistance is exhibited between first and second ends of the ferromagnetic structure across a path which intersects a bias current path between third and fourth ends of the ferromagnetic structure. Thus, the memory cell has at least four memory states including a first memory state associated with a first RH exhibited when the first and the second ferromagnetic layers are set to first magnetic orientations, a second memory state associated with a second RH exhibited when the first ferromagnetic layer is set to the first magnetic orientation and the second ferromagnetic layer is set to a second magnetic orientation, a third memory state associated with a third RH exhibited when the first ferromagnetic layer is set to the second magnetic orientation and the second ferromagnetic layer is set to the first magnetic orientation, and a fourth memory state associated with a fourth RH exhibited when the first and the second ferromagnetic layers are set to the second magnetic orientations. Programmable logic which also makes use of the EHE is also described.
    • 存储单元结构利用非凡的霍尔效应(EHE)来提高数据存储容量。 存储单元具有铁磁结构,其包括在第一和第二铁磁层之间的至少第一铁磁层,第二铁磁层和间隔层。 第一和第二铁磁层表现出垂直的磁各向异性,并且具有根据铁磁结构的多个磁取向组中的一个设置的磁矩,并且铁磁结构呈现出多个预定的非常霍尔电阻R < 根据磁性取向设定。 在铁磁结构的第一和第二端之间横跨与铁磁结构的第三和第四端之间的偏置电流路径相交的路径呈现非凡的霍尔电阻。 因此,存储单元具有至少四个存储器状态,包括当第一和第二铁磁层被设置为第一磁性取向时展示的第一存储器状态,与第一存储器状态相关联,第二存储器状态相关联 当第一铁磁层被设置为第一磁性取向并且第二铁磁层被设置为第二磁性取向时,展示第二R H H N,当第三铁磁层被设置为第二磁性取向时,显示与第三RH相关联的第三存储状态, 将第一铁磁层设定为第二磁性取向,将第二铁磁层设定为第一磁性取向,并且当第一和第二铁磁层 被设置为第二磁方向。 还描述了也利用EHE的可编程逻辑。
    • 6. 发明申请
    • Thermally-assisted perpendicular magnetic recording system and head
    • 热辅助垂直磁记录系统和头
    • US20050190479A1
    • 2005-09-01
    • US10789907
    • 2004-02-27
    • Bruce TerrisJan-Ulrich Thiele
    • Bruce TerrisJan-Ulrich Thiele
    • G11B5/00G11B5/012G11B5/02G11B5/11G11B5/127G11B5/31G11B5/39G11B11/00
    • G11B5/315G11B5/1278G11B5/314G11B5/3967G11B2005/0021
    • A thermally-assisted perpendicular magnetic recording head includes a write pole tip for generating a magnetic write field in the perpendicular magnetic recording layer, a magnetic shield that confines the write field essentially to the data track to be recorded, an electrically resistive heater for heating the recording layer in the presence of the write field, and a return pole. The write pole tip width essentially defines data track width and is substantially surrounded by the magnetic shield. The shield may include side shields with ends located on opposite sides of the write pole tip and a trailing shield having an end spaced from the write pole tip. The resistive heater is wider than the data track and heats both the data track and adjacent tracks, but thermally-assisted magnetic recording occurs only in the data track because the confined magnetic field in the adjacent tracks is less than the required write field.
    • 热辅助垂直磁记录头包括用于在垂直磁记录层中产生磁写入场的写磁极端头,将写磁场基本上限制于要记录的数据磁道的磁屏蔽,用于加热 在存在写字段的情况下,记录层和返回极。 写极尖宽度基本上限定数据磁道宽度并且基本上被磁屏蔽包围。 屏蔽件可以包括端部位于写入磁极尖端的相对侧上的侧部屏蔽件,以及具有与写入磁极尖端间隔开的端部的后屏蔽件。 电阻加热器比数据轨道宽,并加热数据轨道和相邻轨道,但热辅助磁记录仅发生在数据轨道中,因为相邻轨道中的受限磁场小于所需的写入场。