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    • 1. 发明授权
    • Bulk acoustic delay device
    • 大容量声延迟装置
    • US4099147A
    • 1978-07-04
    • US792835
    • 1977-05-02
    • Bruce R. McAvoy
    • Bruce R. McAvoy
    • H03H9/36H03H9/26H01L41/04H03H9/30
    • H03H9/36
    • A bulk acoustic delay device incorporating a transmitting transducer, a substrate, and two receiving transducers is described which may reduce the amplitude of undesired received reflected bulk acoustic waves by positioning one of the two receiving transducers to receive only the reflected wave having a longer acoustic path length due to wave diffraction to provide an output signal having a normal delayed signal and an attenuated triple or quadruple transit echo signal due to destructive interference. An alternate embodiment utilizes one composite receiving transducer.
    • 描述了包含发射换能器,基底和两个接收换能器的体声声延迟装置,其可以通过将两个接收换能器中的一个定位成仅接收具有较长声道的反射波来减小不期望的接收反射体声波的振幅 由于波浪衍射而提供具有正常延迟信号的输出信号和由于破坏性干扰引起的衰减的三重或四通道回波信号。 替代实施例使用一个复合接收换能器。
    • 3. 发明授权
    • High frequency, field-effect transistor
    • 高频场效应晶体管
    • US3942186A
    • 1976-03-02
    • US554785
    • 1975-03-03
    • Bruce R. McAvoyMichael C. Driver
    • Bruce R. McAvoyMichael C. Driver
    • H01L21/00H01L29/00H01L29/812H01L29/80H01L23/48H01L29/48
    • H01L29/00H01L21/00H01L29/812
    • A high frequency, Schottky barrier gate, field-effect transistor is provided with a substantially constant impedance over a broadband of frequencies. The transistor is comprised of a thin dielectric layer providing an effective dielectric constant at gate and drain contacts greater than .sqroot.2. The dielectric layer is supported on the major surface of a conductor substrate, and is preferably 5 microns in thickness and has a dielectric constant greater than about 5. The transistor is also comprised of a thin semiconductor layer of less than about 2 microns in thickness at least at gate portions with an N-type concentration of between about 5 .times. 10.sup.14 and 5 .times. 10.sup.17 carriers/cm.sup.3. The gate contact of the transistor is an elongated Schottky barrier contact adjoining the semiconductor layer spaced between elongated source and drain contacts which make ohmic contact with the semiconductor layer. Means are also provided to maintain the source contact at substantially the same RF potential as the conductor substrate.
    • 高频肖特基势垒栅场效应晶体管在频率宽带上具有基本恒定的阻抗。 该晶体管由薄的电介质层组成,在大于2ROOT 2的栅极和漏极触点处提供有效介电常数。电介质层被支撑在导体衬底的主表面上,并且优选为5微米厚,并且具有介电常数 晶体管还包括厚度小于约2微米的薄半导体层,至少在栅极部分,N型浓度介于约5×1014至5×1017载体/厘米3之间。 晶体管的栅极接触是与在与半导体层欧姆接触的细长的源极和漏极接触之间隔开的半导体层相邻的细长的肖特基势垒接触。 还提供了用于将源极接触保持在与导体衬底基本相同的RF电位的装置。
    • 7. 发明授权
    • Magnetically tuned high overtone bulk acoustic resonator
    • 磁调谐高谐波体声波谐振器
    • US4785269A
    • 1988-11-15
    • US863481
    • 1986-05-15
    • John D. AdamBruce R. McAvoy
    • John D. AdamBruce R. McAvoy
    • H03H9/00H03H9/22
    • H03H9/22
    • Electroacoustic resonating apparatus capable of generating resonances of tunable frequencies. The apparatus includes two transducers coupled to a ferrimagnetic substrate at opposite ends thereof. The first transducer converts an input signal into a signal that produces bulk acoustic waves in the ferrimagnetic substrate. The second transducer receives the bulk acoustic waves and converts them into electrical signals, or alternatively a single transducer which performs both input and output functions. Variable magnetizing means located proximate to the ferromagnetic substrate induces a magnetic field throughout the substrate wherein the magnetic field alters the frequencies of the resonance of the acoustic waves. By varying the magnitude of the magnetic field, the frequencies of the resonances may be varied, thereby allowing tuning of the apparatus.
    • 能产生可调谐频率谐振的电声谐振装置。 该装置包括在其相对端耦合到铁氧体基板的两个换能器。 第一传感器将输入信号转换成在铁磁性衬底中产生体声波的信号。 第二传感器接收体声波并将其转换为电信号,或者替代地执行输入和输出功能的单个换能器。 位于铁磁性衬底附近的可变磁化装置在整个衬底上引起磁场,其中磁场改变了声波的共振频率。 通过改变磁场的大小,可以改变谐振的频率,从而允许对装置进行调谐。