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    • 1. 发明专利
    • Improvements relating to the manufacture of silicon semi-conductor devices
    • GB894786A
    • 1962-04-26
    • GB2861457
    • 1957-09-11
    • WESTINGHOUSE BRAKE & SIGNALWILLIAM BRIAN GLASS
    • B23K1/00H01L21/00H01L21/24H01L21/30H01L29/167
    • 894,786. Soldering. WESTINGHOUSE BRAKE & SIGNAL CO. Ltd., and GLASS, W. B. Sept. 10, 1958 [Sept. 11, 1957], No. 28614/57. Class 83 (4). [Also in Group XXXVI] In making a silicon semi-conductor device, firstly, a quantity of nickel is introduced into a solder and secondly, the solder is applied to a silicon element, the solder acquiring during the first step sufficient nickel to destroy, at least partially, any oxide film present on the element to enable wetting of the element. A nickel-iron disc, whose coefficient of thermal expansion is close to that of silicon, is covered with a low-melting point soft metal, e.g. tin or tin-lead alloy and is heated in hydrogen to not more than 700 C. to partially alloy the soft metal with the nickel and iron. The cooled disc has a solder coating containing up to 1% nickel. Alternatively, 1% nickel may be dissolved in tin or tin-lead alloy to form a solder and this solder and a disc of metal other than a nickel alloy are heated as before. The silicon body is contacted with the solder on the disc and heated in hydrogen to 750‹ C. to bond the body and disc now forming a contact. The nickel iron disc may be removed during cooling or by reheating and replaced by a disc of other metal or a metal lead or electrode may be attached to the wetted area. An impurity, with or without a carrier, may be applied to the wetted area to form a rectifier with a PN junction. Transistors with PNP or NPN junctions may be similarly made. Silicon bodies provided with PN junctions by diffusion may be wetted by the method described, the silicon surface being cleaned by etching before wetting. A solder of high.melting point, e.g. lead, may be superimposed on the wetted surface to bond a metal contact thereto.