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1. 发明申请

US20080007369A1 Bulk acoustic wave filter with reduced nonlinear signal distortion 有权
标题翻译：具有降低的非线性信号失真的体声波滤波器
公开(公告)号：US20080007369A1
公开(公告)日：2008-01-10
申请号：US11484042
申请日：2006-07-10
申请人： Bradley Barber , Sahana Kenchappa , Russ Reisner
发明人： Bradley Barber , Sahana Kenchappa , Russ Reisner
IPC分类号： H03H9/58
CPC分类号： H03H9/605 , H03H9/02086
摘要： A filter circuit includes at least one series resonator having a first terminal and a second terminal, where the first and second terminals of the at least one series resonator are coupled to an input and an output of the filter circuit, respectively. The filter circuit further includes at least one shunt resonator having a first terminal and a second terminal, where the first terminal of the at least one shunt resonator is coupled to the input of the filter circuit and the second terminal of the at least one shunt resonator is coupled to ground. A polarity of the first terminal of the at least one series resonator and a polarity of the first terminal of the at least one shunt resonator are selected so as to reduce harmonic signal generation and other types of distortion in the filter circuit.
摘要翻译：滤波器电路包括至少一个具有第一端子和第二端子的串联谐振器，其中至少一个串联谐振器的第一和第二端子分别耦合到滤波器电路的输入端和输出端。滤波器电路还包括具有第一端子和第二端子的至少一个并联谐振器，其中至少一个并联谐振器的第一端子耦合到滤波器电路的输入端并且至少一个并联谐振器的第二端子耦合到地面。选择至少一个串联谐振器的第一端子的极性和至少一个并联谐振器的第一端子的极性，以便减少滤波器电路中的谐波信号产生和其它类型的失真。

2. 发明申请

US20070284762A1 Semiconductor seal ring 失效
标题翻译：半导体密封环
公开(公告)号：US20070284762A1
公开(公告)日：2007-12-13
申请号：US11442096
申请日：2006-05-25
申请人： Bradley Barber , Tony LoBianco , David T. Young
发明人： Bradley Barber , Tony LoBianco , David T. Young
IPC分类号： H01L23/544
CPC分类号： H01L21/78
摘要： An improved semiconductor seal ring and method therefore is described. The seal ring comprises a thick layer wherein at least a portion of the thick layer is removed from a singulation street prior to singulation, thereby avoiding damage to the thick layer during the singulation process. A thin moisture-proof barrier layer is preferably deposited over at least a portion of the thick layer to seal at least an edge of the thick layer. A thick nonmetallic layer preferably used for fabrication of active circuit elements may advantageously be employed as the thick layer (for example, an aluminum nitride (AlN) layer in, for example, a bulk acoustic wave (BAW) filter device). A thin amorphous nonmetallic layer (e.g., a silicon nitride (SiN) layer) may preferably be deposited over the thick layer. Alternatively, other materials may be used.
摘要翻译：因此，描述了改进的半导体密封环和方法。密封环包括厚层，其中在切割之前，从切割街道中去除厚层的至少一部分，从而避免在切割过程中损坏厚层。优选在厚层的至少一部分上沉积薄的防湿屏障层，以密封厚层的至少一个边缘。优选用于制造有源电路元件的厚非金属层可以有利地用作厚层（例如，例如在体声波（BAW）滤波器装置中的氮化铝（AlN）层）。薄的非晶非金属层（例如，氮化硅（SiN）层）可优选沉积在厚层上。或者，也可以使用其他材料。

3. 发明授权

US08143105B2 Semiconductor seal ring and method of manufacture thereof 失效
标题翻译：半导体密封圈及其制造方法
公开(公告)号：US08143105B2
公开(公告)日：2012-03-27
申请号：US12466064
申请日：2009-05-14
申请人： Bradley Barber , Tony LoBianco , David T. Young
发明人： Bradley Barber , Tony LoBianco , David T. Young
IPC分类号： H01L21/44 , H01L21/48 , H01L21/50
CPC分类号： H01L21/78
摘要： An improved semiconductor seal ring and method therefore is described. The seal ring comprises a thick layer wherein at least a portion of the thick layer is removed from a singulation street prior to singulation, thereby avoiding damage to the thick layer during the singulation process. A thin moisture-proof barrier layer is preferably deposited over at least a portion of the thick layer to seal at least an edge of the thick layer. A thick nonmetallic layer preferably used for fabrication of active circuit elements may advantageously be employed as the thick layer (for example, an aluminum nitride (AlN) layer in, for example, a bulk acoustic wave (BAW) filter device). A thin amorphous nonmetallic layer (e.g., a silicon nitride (SiN) layer) may preferably be deposited over the thick layer. Alternatively, other materials may be used.
摘要翻译：因此，描述了改进的半导体密封环和方法。密封环包括厚层，其中在切割之前，从切割街道中去除厚层的至少一部分，从而避免在切割过程中损坏厚层。优选在厚层的至少一部分上沉积薄的防湿屏障层，以密封厚层的至少一个边缘。优选用于制造有源电路元件的厚非金属层可以有利地用作厚层（例如，例如在体声波（BAW）滤波器装置中的氮化铝（AlN）层）。薄的非晶非金属层（例如，氮化硅（SiN）层）可优选沉积在厚层上。或者，也可以使用其他材料。

4. 发明申请

US20090221129A1 SEMICONDUCTOR SEAL RING AND METHOD OF MANUFACTURE THEREOF 失效
标题翻译：半导体密封圈及其制造方法
公开(公告)号：US20090221129A1
公开(公告)日：2009-09-03
申请号：US12466064
申请日：2009-05-14
申请人： Bradley Barber , Tony LoBianco , David T. Young
发明人： Bradley Barber , Tony LoBianco , David T. Young
IPC分类号： H01L21/78
CPC分类号： H01L21/78
摘要： An improved semiconductor seal ring and method therefore is described. The seal ring comprises a thick layer wherein at least a portion of the thick layer is removed from a singulation street prior to singulation, thereby avoiding damage to the thick layer during the singulation process. A thin moisture-proof barrier layer is preferably deposited over at least a portion of the thick layer to seal at least an edge of the thick layer. A thick nonmetallic layer preferably used for fabrication of active circuit elements may advantageously be employed as the thick layer (for example, an aluminum nitride (AlN) layer in, for example, a bulk acoustic wave (BAW) filter device). A thin amorphous nonmetallic layer (e.g., a silicon nitride (SiN) layer) may preferably be deposited over the thick layer. Alternatively, other materials may be used.
摘要翻译：因此，描述了改进的半导体密封环和方法。密封环包括厚层，其中在切割之前，从切割街道中去除厚层的至少一部分，从而避免在切割过程中损坏厚层。优选在厚层的至少一部分上沉积薄的防湿屏障层，以密封厚层的至少一个边缘。优选用于制造有源电路元件的厚非金属层可以有利地用作厚层（例如，例如在体声波（BAW）滤波器装置中的氮化铝（AlN）层）。薄的非晶非金属层（例如，氮化硅（SiN）层）可优选沉积在厚层上。或者，也可以使用其他材料。

5. 发明授权

US07557430B2 Semiconductor seal ring 失效
标题翻译：半导体密封环
公开(公告)号：US07557430B2
公开(公告)日：2009-07-07
申请号：US11442096
申请日：2006-05-25
申请人： Bradley Barber , Tony LoBianco , David T. Young
发明人： Bradley Barber , Tony LoBianco , David T. Young
IPC分类号： H01L23/544
CPC分类号： H01L21/78
摘要： An improved semiconductor seal ring and method therefore is described. The seal ring comprises a thick layer wherein at least a portion of the thick layer is removed from a singulation street prior to singulation, thereby avoiding damage to the thick layer during the singulation process. A thin moisture-proof barrier layer is preferably deposited over at least a portion of the thick layer to seal at least an edge of the thick layer. A thick nonmetallic layer preferably used for fabrication of active circuit elements may advantageously be employed as the thick layer (for example, an aluminum nitride (AlN) layer in, for example, a bulk acoustic wave (BAW) filter device). A thin amorphous nonmetallic layer (e.g., a silicon nitride (SiN) layer) may preferably be deposited over the thick layer. Alternatively, other materials may be used.
摘要翻译：因此，描述了改进的半导体密封环和方法。密封环包括厚层，其中在切割之前，从切割街道中去除厚层的至少一部分，从而避免在切割过程中损坏厚层。优选在厚层的至少一部分上沉积薄的防湿屏障层，以密封厚层的至少一个边缘。优选用于制造有源电路元件的厚非金属层可以有利地用作厚层（例如，例如在体声波（BAW）滤波器装置中的氮化铝（AlN）层）。薄的非晶非金属层（例如，氮化硅（SiN）层）可优选沉积在厚层上。或者，也可以使用其他材料。

6. 发明授权

US07535323B2 Bulk acoustic wave filter with reduced nonlinear signal distortion 有权
标题翻译：具有降低的非线性信号失真的体声波滤波器
公开(公告)号：US07535323B2
公开(公告)日：2009-05-19
申请号：US11484042
申请日：2006-07-10
申请人： Bradley Barber , Sahana Kenchappa , Russ Reisner
发明人： Bradley Barber , Sahana Kenchappa , Russ Reisner
IPC分类号： H03H9/54
CPC分类号： H03H9/605 , H03H9/02086
摘要： A filter circuit includes at least one series resonator having a first terminal and a second terminal, where the first and second terminals of the at least one series resonator are coupled to an input and an output of the filter circuit, respectively. The filter circuit further includes at least one shunt resonator having a first terminal and a second terminal, where the first terminal of the at least one shunt resonator is coupled to the input of the filter circuit and the second terminal of the at least one shunt resonator is coupled to ground. A polarity of the first terminal of the at least one series resonator and a polarity of the first terminal of the at least one shunt resonator are selected so as to reduce harmonic signal generation and other types of distortion in the filter circuit.
摘要翻译：滤波器电路包括至少一个具有第一端子和第二端子的串联谐振器，其中至少一个串联谐振器的第一和第二端子分别耦合到滤波器电路的输入端和输出端。滤波器电路还包括具有第一端子和第二端子的至少一个并联谐振器，其中至少一个并联谐振器的第一端子耦合到滤波器电路的输入端并且至少一个并联谐振器的第二端子耦合到地面。选择至少一个串联谐振器的第一端子的极性和至少一个并联谐振器的第一端子的极性，以便减少滤波器电路中的谐波信号产生和其它类型的失真。

7. 发明授权

US07414350B1 Acoustic mirror structure for a bulk acoustic wave structure and method for fabricating same 失效
标题翻译：用于体声波结构的声镜结构及其制造方法
公开(公告)号：US07414350B1
公开(公告)日：2008-08-19
申请号：US11367559
申请日：2006-03-03
申请人： Bradley Barber , Paul P. Gehlert , Sahana Kenchappa , Christopher F. Shepard
发明人： Bradley Barber , Paul P. Gehlert , Sahana Kenchappa , Christopher F. Shepard
IPC分类号： H01L41/08
CPC分类号： H03H9/175 , Y10T29/42
摘要： According to one embodiment of the invention, an acoustic mirror structure situated in a bulk acoustic wave structure includes a number of alternating low acoustic impedance and high acoustic impedance layers situated on a substrate. Each high acoustic impedance layer includes a first mole percent of a primary metal and a second mole percent of a secondary metal, where the first mole percent of the primary metal is greater than the second mole percent of the secondary metal, and where the secondary metal causes each high acoustic impedance layer to have increased resistivity. According to this exemplary embodiment, the second mole percent of the secondary metal can cause only a minimal decrease in density of each high acoustic impedance layer. The increased resistivity of each high acoustic impedance layer can cause a reduction in electrical loss in the bulk acoustic wave structure.
摘要翻译：根据本发明的一个实施例，位于体声波结构中的声镜结构包括位于衬底上的多个交替的低声阻抗和高声阻抗层。每个高声阻抗层包括第一摩尔百分数的第一金属和第二摩尔百分比的二次金属，其中第一摩尔百分比的主金属大于第二摩尔百分比的二次金属，并且其中二次金属导致每个高声阻抗层具有增加的电阻率。根据该示例性实施方案，二次金属的第二摩尔百分数可以仅导致每个高声阻抗层的密度的最小降低。每个高声阻抗层的电阻率增加可能导致体声波结构中的电损耗减小。

8. 发明申请

US20110121916A1 HYBRID BULK ACOUSTIC WAVE RESONATOR 审中-公开
标题翻译：混合音箱声波谐振器
公开(公告)号：US20110121916A1
公开(公告)日：2011-05-26
申请号：US12624550
申请日：2009-11-24
申请人： Bradley Barber , Zhiqiang Bi
发明人： Bradley Barber , Zhiqiang Bi
IPC分类号： H03H9/54 , H01L41/22
CPC分类号： H03H9/15 , H03H3/04 , H03H9/171 , H03H9/173 , H03H9/175 , Y10T29/42
摘要： A hybrid bulk acoustic wave (BAW) resonator comprises a first electrode, a second electrode, a piezoelectric layer disposed between the first and second electrodes, and a single mirror pair disposed adjacent the second electrode. In one example, the hybrid bulk acoustic wave resonator further comprises a substrate, and the first electrode is disposed adjacent the substrate. A method of fabricating a hybrid BAW resonator is also disclosed.
摘要翻译：混合体声波（BAW）谐振器包括第一电极，第二电极，设置在第一和第二电极之间的压电层和邻近第二电极设置的单个反射镜对。在一个示例中，混合体声波谐振器还包括衬底，并且第一电极邻近衬底设置。还公开了一种制造混合BAW谐振器的方法。

9. 发明授权

US07544612B1 Method and structure for reducing the effect of vertical steps in patterned layers in semiconductor structures 有权
标题翻译：用于减小半导体结构中图案化层中的垂直台阶的影响的方法和结构
公开(公告)号：US07544612B1
公开(公告)日：2009-06-09
申请号：US11336239
申请日：2006-01-20
申请人： Bradley Barber
发明人： Bradley Barber
IPC分类号： H01L21/302
CPC分类号： H01L49/02 , H03H3/0072 , H03H9/02133 , H03H2009/0248
摘要： According to an exemplary embodiment, a method for fabricating a multilayer semiconductor structure includes forming first and second patterned segments, where a first patterned segment sidewall is separated from a second patterned segment sidewall by a first gap; forming a first conformal layer over first and second patterned segments and first gap, where the first conformal layer forms a depression over the first gap; forming a third patterned segment in the depression such that a third patterned segment sidewall is separated from the first patterned segment sidewall by a distance, where the third patterned segment sidewall is separated from a depression sidewall by a second gap; and forming a second conformal layer over the first conformal layer, third patterned segment, and second gap, where a dip is formed in the second conformal layer over the second gap. The distance is controlled so as to reduce a size of the dip.
摘要翻译：根据示例性实施例，制造多层半导体结构的方法包括形成第一和第二图案化区段，其中第一图案化区段侧壁与第二图案化区段侧壁与第一间隙分离; 在第一和第二图案化区段和第一间隙上形成第一共形层，其中第一共形层在第一间隙上形成凹陷; 在所述凹陷中形成第三图案化区段，使得第三图案化区段侧壁与所述第一图案化区段侧壁分开一段距离，其中所述第三图案化区段侧壁与凹陷侧壁隔开第二间隙; 以及在第一共形层，第三图案化段和第二间隙上形成第二共形层，其中在第二间隙上在第二共形层中形成浸渍。控制距离以减小浸渍的尺寸。

10. 发明申请

US20050224450A1 Incremental tuning process for electrical resonators based on mechanical motion 有权
标题翻译：基于机械运动的电谐振器的增量调谐过程
公开(公告)号：US20050224450A1
公开(公告)日：2005-10-13
申请号：US11146179
申请日：2005-06-06
申请人： Bradley Barber , Yiu-Huen Wong
发明人： Bradley Barber , Yiu-Huen Wong
IPC分类号： B44C1/22 , G04F5/06 , H03H3/04
CPC分类号： H03H9/131 , G04F5/063 , H03H3/04 , H03H9/175 , H03H2003/0428 , H04R15/02 , H04R17/10 , H04R31/00 , Y10S29/016 , Y10T29/42 , Y10T29/435 , Y10T29/49004 , Y10T29/49005
摘要： The present invention is a method for adjusting the resonant frequency of a mechanical resonator whose frequency is dependent on the overall resonator thickness. Alternating selective etching is used to remove distinct adjustment layers from a top electrode. One of the electrodes is structured with a plurality of stacked adjustment layers, each of which has distinct etching properties from any adjacent adjustment layers. Also as part of the same invention is a resonator structure in which at least one electrode has a plurality of stacked layers of a material having different etching properties from any adjacent adjustment layers, and each layer has a thickness corresponding to a calculated frequency increment in the resonant frequency of the resonator.
摘要翻译：本发明是一种用于调节机械谐振器的谐振频率的方法，该机械谐振器的频率取决于整个谐振器厚度。使用交替选择性蚀刻来从顶部电极去除不同的调节层。其中一个电极由多个堆叠的调整层构成，每个层都具有与任何相邻的调整层不同的蚀刻特性。同样的发明的一部分也是一种共振器结构，其中至少一个电极具有与任何相邻的调整层具有不同蚀刻性能的材料的多个堆叠层，并且每个层的厚度对应于计算出的谐振器的谐振频率。

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