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1. 发明授权

US06518509B1 Copper plated invar with acid preclean 有权
标题翻译：镀铜搪瓷与酸预清洗
公开(公告)号：US06518509B1
公开(公告)日：2003-02-11
申请号：US09471680
申请日：1999-12-23
申请人： Raymond T. Galasco , Bonnie S. McClure , Craig W. Richards
发明人： Raymond T. Galasco , Bonnie S. McClure , Craig W. Richards
IPC分类号： H05K109
CPC分类号： H05K1/05 , H05K1/056 , H05K3/445 , H05K2201/0347 , Y10T29/49117 , Y10T29/49126 , Y10T29/4913
摘要： An electronic structure that includes a copper-Invar-copper (CIC) laminate of negligible thickness, such as a thickness not exceeding about 0.5 microns. The electronic structure may have a via passes through the CIC laminate such that the via is plated with a ring of copper. The ring of copper and the copper in the CIC laminate may have about the same grain structure.
摘要翻译：一种电子结构，其包括可忽略不计厚度的铜 - 堇青铜（CIC）层压体，例如厚度不超过约0.5微米。电子结构可以具有通过CIC层压体的通孔，使得通孔镀有铜环。 CIC层叠体中的铜环和铜环可以具有大致相同的晶粒结构。

2. 发明授权

US06355364B1 Process of heat treating and annealing CIC and CIC created thereby 失效
标题翻译： CIC和CIC的热处理和退火工艺由此产生
公开(公告)号：US06355364B1
公开(公告)日：2002-03-12
申请号：US09343078
申请日：1999-06-29
申请人： Robert M. Japp , Lisa J. Jimarez , Bonnie S. McClure
发明人： Robert M. Japp , Lisa J. Jimarez , Bonnie S. McClure
IPC分类号： B23B1520
CPC分类号： H05K1/05 , B32B15/01 , C21D2251/02 , Y10S428/925 , Y10S428/926 , Y10T428/12458 , Y10T428/1291 , Y10T428/12917
摘要： Processes for preparing copper-INVAR-copper (CIC) for use in making chip packaging and the CIC created. One process comprises annealing a CIC section at a temperature in a range of 1475° F. to 1625° F. for a time in a range of 40 to 120 seconds. Another process includes heat treating a CIC section at a temperature in a range of 1275° F. to 1425° F. for a time in a range of 40 to 120 seconds. The above processes can be combined. The CIC section created exhibits unique electrical, physical, and mechanical properties.
摘要翻译：制备用于制造芯片封装的铜 - INVAR-Copper（CIC）和CIC的工艺。一个方法包括在1475°F至1625°F范围内的温度下将CIC部分退火40至120秒的时间。另一种方法包括在1275°F至1425°F范围内的温度下对CIC部分进行热处理40至120秒的时间。上述过程可以组合。创建的CIC部分具有独特的电气，物理和机械性能。

3. 发明授权

US06248958B1 Resistivity control of CIC material 失效
标题翻译： CIC材料的电阻率控制
公开(公告)号：US06248958B1
公开(公告)日：2001-06-19
申请号：US09201482
申请日：1998-11-30
申请人： Bonnie S. McClure , David B. Stone
发明人： Bonnie S. McClure , David B. Stone
IPC分类号： H05K300
CPC分类号： H05K1/056 , H05K3/445 , Y10S428/901 , Y10T29/49155 , Y10T428/24917
摘要： A printed circuit board having a diffusion barrier layer between layers of copper-invar-copper material to prevent the migration of nickel, originating from the invar, into the surrounding copper layers is disclosed. A printed circuit board having a diffusion barrier layer between a conductive core and a conductive layer, and a method of forming the printed circuit board are also disclosed.
摘要翻译：公开了一种印刷电路板，其具有在铜 - 铜 - 铜材料的层之间的扩散阻挡层，以防止源自殷钢的镍迁移到周围的铜层中。还公开了一种在导电芯和导电层之间具有扩散阻挡层的印刷电路板，以及形成印刷电路板的方法。

4. 发明授权

US06935018B2 Copper plated invar with acid preclean 失效
标题翻译：镀铜搪瓷与酸预清洗
公开(公告)号：US06935018B2
公开(公告)日：2005-08-30
申请号：US10281450
申请日：2002-10-25
申请人： Raymond T. Galasco , Bonnie S. McClure , Craig W. Richards
发明人： Raymond T. Galasco , Bonnie S. McClure , Craig W. Richards
IPC分类号： H05K1/05 , H05K3/44 , H01R43/00
CPC分类号： H05K1/05 , H05K1/056 , H05K3/445 , H05K2201/0347 , Y10T29/49117 , Y10T29/49126 , Y10T29/4913
摘要： A method for forming a copper-Invar-copper (CIC) laminate having an intermetallic layer of negligible thickness, and a structure associated with the CIC laminate. Starting with a block of Invar, the method includes a cleaning step followed by an electroplating step. The cleaning step electrochemically cleans the block of Invar with an acid solution while applying a negative voltage bias to the block of Invar. The electroplating step electroplates copper on the block of Invar, resulting in the block of Invar being sandwiched between two layers of copper, such that an intermetallic layer of zero or negligible thickness is disposed between the block of Invar and each layer of copper. Each layer of copper has a uniform thickness. If the starting block of Invar contains a through hole, then the electroplating step will plate a ring of copper on the through hole wall. The ring of copper makes a seamless connection with the two layers of copper, because the ring of copper and the two layers of copper each have the same grain structure.
摘要翻译：一种用于形成具有可忽略的厚度的金属间化合物的铜 - 阴模铜（CIC）层压体的方法和与CIC层压体相关联的结构。从一块Invar开始，该方法包括一个清洁步骤，然后是电镀步骤。清洁步骤用酸溶液电化学地清洗Invar块，同时对Invar的块施加负电压偏压。电镀步骤将铜镀在Invar块上，导致Invar块被夹在两层铜之间，使得在Invar块和每层铜之间设置零或可忽略的厚度的金属间层。铜层每层厚度均匀。如果Invar的起始块包含一个通孔，则电镀步骤将在通孔壁上镀一个铜环。由于铜环和两层铜都具有相同的晶粒结构，铜环与两层铜无缝连接。

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