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1. 发明授权

US09076920B2 Aqueous alkaline etching and cleaning composition and method for treating the surface of silicon substrates 有权
标题翻译：水性碱蚀刻和清洗组合物及其处理方法
公开(公告)号：US09076920B2
公开(公告)日：2015-07-07
申请号：US13703233
申请日：2011-06-01
申请人： Berthold Ferstl , Simon Braun , Achim Fessenbecker
发明人： Berthold Ferstl , Simon Braun , Achim Fessenbecker
IPC分类号： H01L21/461 , H01L31/18 , C11D7/32 , C11D7/34 , C11D7/36 , C11D11/00 , C09K13/00 , C09K13/06 , H01L21/306
CPC分类号： H01L31/1804 , C09K13/00 , C09K13/06 , C11D7/3209 , C11D7/34 , C11D7/36 , C11D11/0047 , H01L21/306 , H01L21/30604 , Y02E10/547 , Y02P70/521
摘要： An aqueous alkaline etching and cleaning composition for treating the surface of silicon substrates, the said composition comprising: (A) a quaternary ammonium hydroxide; and (B) a component selected from the group consisting of water-soluble acids and their water-soluble salts of the general formulas (I) to (V): (R1—S03-)nXn+ (I), R—P032−(Xn+)3-n (II); (RO—S03-)nXn+ (III), RO—P032−(Xn+)3-n, (IV), and [(RO)2P02−]nXn+ (V); wherein the n=1 or 2; X is hydrogen or alkaline or alkaline-earth metal; the variable R1 is an olefinically unsaturated aliphatic or cycloaliphatic moiety and R is R1 or an alkylaryl moiety; the use of the composition for treating silicon substrates, a method for treating the surface of silicon substrates, and methods for manufacturing devices generating electricity upon the exposure to electromagnetic radiation.
摘要翻译：一种用于处理硅衬底表面的水性碱性蚀刻和清洁组合物，所述组合物包含：（A）季铵氢氧化物; 和（B）选自水溶性酸及其通式（I）至（V）的水溶性盐的组分：（R1-SO3-）nXn +（I），R-P032-（ Xn +）3-n（II）; （RO-S03-）nXn +（III），RO-P032-（Xn +）3-n，（IV）和[（RO）2P02-] nXn +（V）其中n = 1或2; X是氢或碱金属或碱土金属; 变量R1是烯属不饱和脂族或脂环族部分，R是R 1或烷芳基部分; 使用用于处理硅衬底的组合物，用于处理硅衬底的表面的方法，以及在暴露于电磁辐射时产生电的器件的制造方法。

2. 发明申请

US20140134778A1 AQUEOUS ALKALINE COMPOSITIONS AND METHOD FOR TREATING THE SURFACE OF SILICON SUBSTRATES 审中-公开
标题翻译：水性碱性组合物和处理硅基材表面的方法
公开(公告)号：US20140134778A1
公开(公告)日：2014-05-15
申请号：US14131304
申请日：2012-07-12
申请人： Berthold Ferstl
发明人： Berthold Ferstl
IPC分类号： C09K13/00 , C09K13/06 , H01L31/0236 , C11D7/34
CPC分类号： C09K13/00 , C09G1/04 , C09K3/1463 , C09K13/06 , C11D7/34 , H01L31/02363 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： An aqueous alkaline composition for treating the surface of silicon substrates, the said composition comprising: (A) a quaternary ammonium hydroxide; and (B) a component selected from the group consisting of water-soluble acids and their water-soluble salts of the general formulas (I) to (V): (R1—S03)nXn+(I), R—P032-(Xn+)3-n(II); (RO—S03-)nXn+(III), RO—P032-(Xn+)3-n (IV), and [(RO)2P02-]nXn+(V); wherein the n=1 or 2; X is hydrogen, ammonium, or alkaline or alkaline-earth metal; the variable R1 is an olefmically unsaturated aliphatic or cycloaliphatic moiety and R is R1 or an alkylaryl moiety; and (C) a buffer system, wherein at least one component other than water is volatile; the use of the composition for treating silicon substrates, a method for treating the surface of silicon substrates, and methods for manufacturing devices generating electricity upon the exposure to electromagnetic radiation.
摘要翻译：一种用于处理硅衬底表面的含水碱性组合物，所述组合物包含：（A）季铵氢氧化物; 和（B）选自水溶性酸及其通式（I）至（V）的水溶性盐的组分：（R1-SO3）nXn +（I），R-P032-（Xn + ）3-n（II）; （RO-S03-）nXn +（III），RO-P032-（Xn +）3-n（IV）和[（RO）2P02-] nXn +（V）其中n = 1或2; X是氢，铵或碱或碱土金属; 变量R1是烯属不饱和脂族或脂环族部分，R是R 1或烷基芳基部分; 和（C）缓冲系统，其中除水以外的至少一种成分是挥发性的; 使用用于处理硅衬底的组合物，用于处理硅衬底的表面的方法，以及在暴露于电磁辐射时产生电的器件的制造方法。

3. 发明申请

US20100120256A1 METHOD FOR REMOVING ETCHING RESIDUES FROM SEMICONDUCTOR COMPONENTS 审中-公开
标题翻译：从半导体元件去除蚀刻残留物的方法
公开(公告)号：US20100120256A1
公开(公告)日：2010-05-13
申请号：US12598605
申请日：2008-05-09
申请人： Berthold Ferstl , Andreas Kuehner
发明人： Berthold Ferstl , Andreas Kuehner
IPC分类号： H01L21/3065 , H01L21/308 , H01L21/3105
CPC分类号： H01L21/02063 , H01L21/02071
摘要： A method for cleaning structured surfaces of semiconductor components to remove photoresist and etching residues after the etching of the surface, comprising: a) removal of the photoresist, b) treatment of the surface with an acidic aqueous solution comprising one or more acids and one or more oxidizing agents, c) treatment of the surface with an alkaline aqueous solution and d) washing of the surface with demineralized water, the steps a), b) and c) being effected before step d).
摘要翻译：一种用于清洁半导体部件的结构化表面以在蚀刻表面之后蚀刻残留物的方法，包括：a）去除光致抗蚀剂，b）用包含一种或多种酸的酸性水溶液处理表面，和更多的氧化剂，c）用碱性水溶液处理表面，d）用软化水洗涤表面，步骤a），b）和c）在步骤d）之前进行。

4. 发明申请

US20120142573A1 USE OF MIXTURES FOR REMOVING POLYURETHANE FROM METAL SURFACES 审中-公开
标题翻译：使用从金属表面去除聚氨酯的混合物
公开(公告)号：US20120142573A1
公开(公告)日：2012-06-07
申请号：US13307497
申请日：2011-11-30
申请人： Sabrina Montero Pancera , Berthold Ferstl , Jürhen Prüfe , Marco Ross
发明人： Sabrina Montero Pancera , Berthold Ferstl , Jürhen Prüfe , Marco Ross
IPC分类号： C09D9/04
CPC分类号： C09D9/005 , B29C33/722 , C11D3/3726 , C11D7/06 , C11D7/263 , C11D7/3209 , C11D7/34 , C11D11/0029
摘要： Use of mixtures comprising(A) at least one solvent with a flashpoint of at least 80° C.,(B) at least one corrosion inhibitor which is liquid at room temperature,(C) at least one base selected from organic amines, ammonium hydroxides, and alkali metal hydroxides,(D) water, and(E) optionally one or more polyurethanes, for removing polyurethane from metal surfaces.
摘要翻译：使用混合物，其包含（A）至少一种具有至少80℃的闪点的溶剂，（B）至少一种在室温下为液体的腐蚀抑制剂，（C）至少一种选自有机胺，铵氢氧化物和碱金属氢氧化物，（D）水和（E）任选的一种或多种聚氨酯，用于从金属表面除去聚氨酯。

5. 发明申请

US20130078756A1 AQUEOUS ALKALINE ETCHING AND CLEANING COMPOSITION AND METHOD FOR TREATING THE SURFACE OF SILICON SUBSTRATES 有权
标题翻译：水性碱蚀刻和清洁组合物及其处理硅基材表面的方法
公开(公告)号：US20130078756A1
公开(公告)日：2013-03-28
申请号：US13703233
申请日：2011-06-01
申请人： Berthold Ferstl , Simon Braun , Achim Fessenbecker
发明人： Berthold Ferstl , Simon Braun , Achim Fessenbecker
IPC分类号： H01L31/18 , C09K13/06 , H01L21/306 , C09K13/00
CPC分类号： H01L31/1804 , C09K13/00 , C09K13/06 , C11D7/3209 , C11D7/34 , C11D7/36 , C11D11/0047 , H01L21/306 , H01L21/30604 , Y02E10/547 , Y02P70/521
摘要： An aqueous alkaline etching and cleaning composition for treating the surface of silicon substrates, the said composition comprising: (A) a quaternary ammonium hydroxide; and (B) a component selected from the group consisting of water-soluble acids and their water-soluble salts of the general formulas (I) to (V): (R1—S03-)nXn+ (I), R—P032−(Xn+)3-n (II); (RO—S03-)nXn+ (III), RO—P032−(Xn+)3-n, (IV), and [(RO)2P02-]nXn+ (V); wherein the n=1 or 2; X is hydrogen or alkaline or alkaline-earth metal; the variable R1 is an olefinically unsaturated aliphatic or cycloaliphatic moiety and R is R1 or an alkylaryl moiety; the use of the composition for treating silicon substrates, a method for treating the surface of silicon substrates, and methods for manufacturing devices generating electricity upon the exposure to electromagnetic radiation.
摘要翻译：一种用于处理硅衬底表面的水性碱性蚀刻和清洁组合物，所述组合物包含：（A）季铵氢氧化物; 和（B）选自水溶性酸及其通式（I）至（V）的水溶性盐的组分：（R1-SO3-）nXn +（I），R-P032-（ Xn +）3-n（II）; （RO-S03-）nXn +（III），RO-P032-（Xn +）3-n，（IV）和[（RO）2P02-] nXn +（V）其中n = 1或2; X是氢或碱金属或碱土金属; 变量R1是烯属不饱和脂族或脂环族部分，R是R 1或烷芳基部分; 使用用于处理硅衬底的组合物，用于处理硅衬底的表面的方法，以及在暴露于电磁辐射时产生电的器件的制造方法。

6. 发明申请

US20100136794A1 METHOD FOR REMOVING ETCHING RESIDUES FROM SEMICONDUCTOR COMPONENTS 审中-公开
标题翻译：从半导体元件去除蚀刻残留物的方法
公开(公告)号：US20100136794A1
公开(公告)日：2010-06-03
申请号：US12598443
申请日：2008-05-09
申请人： Berthold Ferstl , Andreas Kuehner
发明人： Berthold Ferstl , Andreas Kuehner
IPC分类号： H01L21/306
CPC分类号： H01L21/02071 , G03F7/423 , H01L21/02063
摘要： A method for cleaning structured surfaces of semiconductor components to remove photoresist and etching residues after the etching of the surface, comprising: a) treatment of the surface with an acidic aqueous solution comprising one or more acids and one or more oxidizing agents, b) removal of the photoresist and c) washing with demineralized water in the stated sequence.
摘要翻译：一种用于清洁半导体部件的结构化表面以在蚀刻表面之后蚀刻残留物的方法，包括：a）用包含一种或多种酸和一种或多种氧化剂的酸性水溶液处理表面，b）除去的光刻胶，c）用所述顺序的软化水洗涤。

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