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    • 7. 发明申请
    • Enhanced photodetector
    • 增强型光电探测器
    • US20050056861A1
    • 2005-03-17
    • US10502109
    • 2003-02-03
    • Cheng KoBarry Levine
    • Cheng KoBarry Levine
    • H01L31/10H01L20060101H01L21/00H01L29/732H01L31/00H01L31/0304H01L31/0328H01L31/075H01L31/103
    • H01L31/105H01L31/03042H01L31/102Y02E10/544
    • The present invention includes a photodiode having a first p-type semiconductor layer and an n-type semi-conductor layer coupled by a second p-type semiconductor layer. The second p-type semiconductor layer has graded doping along the path of the carriers. In particular, the doping is concentration graded from a high value near the anode to a lower p concentration towards the cathode. By grading the doping in this way, an increase in absorption is achieved, improving the responsivity of the device. Although this doping increases the capacitance relative to an intrinsic semiconductor of the same thickness, the pseudo electric field that is created by the graded doping gives the electrons a very high velocity which more than compensates for this increased capacitance.
    • 本发明包括具有由第二p型半导体层耦合的第一p型半导体层和n型半导体层的光电二极管。 第二p型半导体层沿载流子的路径分级掺杂。 特别地,掺杂是从阳极附近的高值到朝向阴极的较低p浓度的浓度。 通过以这种方式对掺杂进行分级,实现了吸收的增加,提高了器件的响应度。 虽然这种掺杂相对于相同厚度的本征半导体增加了电容,但是由渐变掺杂产生的伪电场给予电子非常高的速度,这大大地补偿了这种增加的电容。
    • 10. 发明授权
    • Planar avalanche photodiode
    • 平面雪崩光电二极管
    • US07348607B2
    • 2008-03-25
    • US10502110
    • 2003-02-03
    • Cheng C. KoBarry Levine
    • Cheng C. KoBarry Levine
    • H01L29/732
    • H01L31/1075H01L31/035281Y02E10/50
    • The present invention includes a planar avalanche photodiode having a first n-type semiconductor layer defining a planar contact area, and a second n-type semiconductor layer having a p-type diffusion region. Further features of the structure includes an n-type semiconductor multiplication layer, an n-type semiconductor absorption layer, and a p-type contact layer. Further embodiments include a planar avalanche photodiode having a first n-type semiconductor layer defining a planar contact area, an n-type semiconductor multiplication layer, an n-type semiconductor absorption layer and a p-type semiconductor layer electrically coupled to a p-type contact layer.
    • 本发明包括具有限定平面接触面积的第一n型半导体层的平面雪崩光电二极管和具有p型扩散区域的第二n型半导体层。 该结构的其它特征包括n型半导体倍增层,n型半导体吸收层和p型接触层。 另外的实施例包括具有限定平面接触面积的第一n型半导体层的平面雪崩光电二极管,n型半导体倍增层,n型半导体吸收层和与p型电耦合的p型半导体层 接触层。