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1. 发明授权

US07573737B2 High speed low power magnetic devices based on current induced spin-momentum transfer 失效
标题翻译：基于电流感应自旋动量传递的高速低功率磁性装置
公开(公告)号：US07573737B2
公开(公告)日：2009-08-11
申请号：US11932745
申请日：2007-10-31
申请人： Andrew Kent , Barbaros Ozyilmaz , Enrique Gonzalez Garcia
发明人： Andrew Kent , Barbaros Ozyilmaz , Enrique Gonzalez Garcia
IPC分类号： G11C11/15
CPC分类号： G11C11/5607 , G11C11/161 , G11C11/1673 , G11C11/1675
摘要： A high speed and low power method to control and switch the magnetization direction and/or helicity of a magnetic region in a magnetic device for memory cells using spin polarized electrical current. The magnetic device comprises a reference magnetic layer with a fixed magnetic helicity and/or magnetization direction and a free magnetic layer with a changeable magnetic helicity. The fixed magnetic layer and the free magnetic layer are preferably separated by a non-magnetic layer, and the reference layer includes an easy axis perpendicular to the reference layer. A current can be applied to the device to induce a torque that alters the magnetic state of the device so that it can act as a magnetic memory for writing information. The resistance, which depends on the magnetic state of the device, is measured to thereby read out the information stored in the device.
摘要翻译：一种用于使用自旋极化电流来控制和切换用于存储器单元的磁性装置中的磁区的磁化方向和/或螺旋度的高速和低功率方法。磁性装置包括具有固定磁性螺旋度和/或磁化方向的参考磁性层和具有可变磁性的自由磁性层。固定磁性层和自由磁性层优选由非磁性层分离，并且参考层包括垂直于参考层的容易轴。可以将电流施加到装置以引起改变装置的磁状态的扭矩，使得其可以用作写入信息的磁存储器。测量取决于装置的磁状态的电阻，从而读出存储在装置中的信息。

2. 发明申请

US20110038198A1 ELECTRONIC DEVICES BASED ON CURRENT INDUCED MAGNETIZATION DYNAMICS IN SINGLE MAGNETIC LAYERS 有权
标题翻译：基于电磁感应磁化动力学的电子设备
公开(公告)号：US20110038198A1
公开(公告)日：2011-02-17
申请号：US11935392
申请日：2007-11-05
申请人： Andrew Kent , Barbaros Ozyilmaz
发明人： Andrew Kent , Barbaros Ozyilmaz
IPC分类号： G11C11/02 , H01H9/00 , H01F7/02 , H03B1/00
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01F1/404 , H01F10/193
摘要： The present invention generally relates to magnetic devices used in memory and information processing applications, such as giant magneto-resistance (GMR) devices and tunneling magneto-resistance devices. More specifically, the present invention is directed to a single ferromagnetic layer device in which an electrical current is used to control and change magnetic configurations as well as induce high frequency magnetization dynamics. The magnetic layer includes full spin-polarized magnetic material, which may also have non-uniform magnetization. The non-uniform magnetization is achieved by varying the shape or roughness of the magnetic material. The present invention may be used in memory cells, as well as high frequency electronics, such as compact microwave sources, detectors, mixers and phase shifters.
摘要翻译：本发明一般涉及在存储器和信息处理应用中使用的磁性器件，例如巨磁阻（GMR）器件和隧道磁阻器件。更具体地，本发明涉及单个铁磁层器件，其中使用电流来控制和改变磁性结构以及引起高频磁化动力学。磁性层包括全自旋极化磁性材料，其也可能具有不均匀的磁化强度。通过改变磁性材料的形状或粗糙度来实现非均匀磁化。本发明可以用于存储器单元以及高频电子器件，例如紧凑的微波源，检测器，混频器和移相器。

3. 发明申请

US20080112094A1 HIGH SPEED LOW POWER ANNULAR MAGNETIC DEVICES BASED ON CURRENT INDUCED SPIN-MOMENTUM TRANSFER 失效
标题翻译：基于电流感应旋转传递的高速低功率静电磁装置
公开(公告)号：US20080112094A1
公开(公告)日：2008-05-15
申请号：US11932745
申请日：2007-10-31
申请人： Andrew Kent , Barbaros Ozyilmaz , Enrique Gonzalez Garcia
发明人： Andrew Kent , Barbaros Ozyilmaz , Enrique Gonzalez Garcia
IPC分类号： G11B5/33
CPC分类号： G11C11/5607 , G11C11/161 , G11C11/1673 , G11C11/1675
摘要： A high speed and low power method to control and switch the magnetization direction and/or helicity of a magnetic region in a magnetic device for memory cells using spin polarized electrical current. The magnetic device comprises a reference magnetic layer with a fixed magnetic helicity and/or magnetization direction and a free magnetic layer with a changeable magnetic helicity. The fixed magnetic layer and the free magnetic layer are preferably separated by a non-magnetic layer, and the reference layer includes an easy axis perpendicular to the reference layer. A current can be applied to the device to induce a torque that alters the magnetic state of the device so that it can act as a magnetic memory for writing information. The resistance, which depends on the magnetic state of the device, is measured to thereby read out the information stored in the device.
摘要翻译：一种用于使用自旋极化电流来控制和切换用于存储器单元的磁性装置中的磁区的磁化方向和/或螺旋度的高速和低功率方法。磁性装置包括具有固定磁性螺旋度和/或磁化方向的参考磁性层和具有可变磁性的自由磁性层。固定磁性层和自由磁性层优选由非磁性层分离，并且参考层包括垂直于参考层的容易轴。可以将电流施加到装置以引起改变装置的磁状态的扭矩，使得其可以用作写入信息的磁存储器。测量取决于装置的磁状态的电阻，从而读出存储在装置中的信息。

4. 发明申请

US20080259508A2 HIGH SPEED LOW POWER MAGNETIC DEVICES BASED ON CURRENT INDUCED SPIN-MOMENTUM TRANSFER 失效
标题翻译：基于电流感应电动势传输的高速低功率磁性装置
公开(公告)号：US20080259508A2
公开(公告)日：2008-10-23
申请号：US11932745
申请日：2007-10-31
申请人： Andrew Kent , Barbaros Ozyilmaz , Enrique Gonzalez Garcia
发明人： Andrew Kent , Barbaros Ozyilmaz , Enrique Gonzalez Garcia
IPC分类号： G11B5/33
CPC分类号： G11C11/5607 , G11C11/161 , G11C11/1673 , G11C11/1675
摘要： A high speed and low power method to control and switch the magnetization direction and/or helicity of a magnetic region in a magnetic device for memory cells using spin polarized electrical current. The magnetic device comprises a reference magnetic layer with a fixed magnetic helicity and/or magnetization direction and a free magnetic layer with a changeable magnetic helicity. The fixed magnetic layer and the free magnetic layer are preferably separated by a non-magnetic layer, and the reference layer includes an easy axis perpendicular to the reference layer. A current can be applied to the device to induce a torque that alters the magnetic state of the device so that it can act as a magnetic memory for writing information. The resistance, which depends on the magnetic state of the device, is measured to thereby read out the information stored in the device.
摘要翻译：一种用于使用自旋极化电流来控制和切换用于存储器单元的磁性装置中的磁区的磁化方向和/或螺旋度的高速和低功率方法。磁性装置包括具有固定磁性螺旋度和/或磁化方向的参考磁性层和具有可变磁性的自由磁性层。固定磁性层和自由磁性层优选由非磁性层分离，并且参考层包括垂直于参考层的容易轴。可以将电流施加到装置以引起改变装置的磁状态的扭矩，使得其可以用作写入信息的磁存储器。测量取决于装置的磁状态的电阻，从而读出存储在装置中的信息。

5. 发明申请

US20050041462A1 High speed low power magnetic devices based on current induced spin-momentum transfer 有权
标题翻译：基于电流感应自旋动量传递的高速低功率磁性装置
公开(公告)号：US20050041462A1
公开(公告)日：2005-02-24
申请号：US10643762
申请日：2003-08-19
申请人： Andrew Kent , Enrique Gonzalez Garcia , Barbaros Ozyilmaz
发明人： Andrew Kent , Enrique Gonzalez Garcia , Barbaros Ozyilmaz
IPC分类号： G11C11/15 , G11C11/16 , H01F10/32 , H01L43/08 , G11C11/00
CPC分类号： H01F10/325 , B82Y10/00 , B82Y25/00 , G11C11/161 , G11C11/1673 , G11C11/1675 , G11C11/5607 , H01F10/123 , H01F10/3286 , H01L29/82 , H01L43/08
摘要： The present invention generally relates to the field of magnetic devices for memory cells that can serve as non-volatile memory. More specifically, the present invention describes a high speed and low power method by which a spin polarized electrical current can be used to control and switch the magnetization direction of a magnetic region in such a device. The magnetic device comprises a pinned magnetic layer with a fixed magnetization direction, a free magnetic layer with a free magnetization direction, and a read-out magnetic layer with a fixed magnetization direction. The pinned magnetic layer and the free magnetic layer are separated by a non-magnetic layer, and the free magnetic layer and the read-out magnetic layer are separated by another non-magnetic layer. The magnetization directions of the pinned and free layers generally do not point along the same axis. The non-magnetic layers minimize the magnetic interaction between the magnetic layers. A current is applied to the device to induce a torque that alters the magnetic state of the device so that it can act as a magnetic memory for writing information. The resistance, which depends on the magnetic state of the device, is measured to thereby read out the information stored in the device.
摘要翻译：本发明一般涉及可用作非易失性存储器的用于存储器单元的磁性装置领域。更具体地，本发明描述了可以使用自旋极化电流来控制和切换这种装置中的磁性区域的磁化方向的高速和低功率方法。磁性装置包括具有固定磁化方向的固定磁性层，具有自由磁化方向的自由磁性层和具有固定磁化方向的读出磁性层。固定磁性层和自由磁性层由非磁性层分离，自由磁性层和读出磁性层被另一个非磁性层分离。被钉扎和自由层的磁化方向通常不沿着相同的轴线。非磁性层使磁性层之间的磁性相互作用最小化。电流被施加到装置以引起改变装置的磁状态的扭矩，使得它可以用作写入信息的磁存储器。测量取决于装置的磁状态的电阻，从而读出存储在装置中的信息。

6. 发明授权

US08659009B2 Locally gated graphene nanostructures and methods of making and using 失效
标题翻译：本地门控石墨烯纳米结构及其制造和使用方法
公开(公告)号：US08659009B2
公开(公告)日：2014-02-25
申请号：US12290648
申请日：2008-10-31
申请人： Barbaros Ozyilmaz , Dmitri Efetov , Pablo Jarillo-Herrero , Philip Kim
发明人： Barbaros Ozyilmaz , Dmitri Efetov , Pablo Jarillo-Herrero , Philip Kim
IPC分类号： H01L29/08
CPC分类号： H01L29/78684 , B82Y10/00 , H01L29/0665 , H01L29/0673 , H01L29/127 , H01L29/1606 , H01L29/7781 , H01L29/78648 , H01L29/78696
摘要： A locally gated graphene nanostructure is described, along with methods of making and using the same. A graphene layer can include first and second terminal regions separated by a substantially single layer gated graphene nanoconstriction. A local first gate region can be separated from the graphene nanoconstriction by a first gate dielectric. The local first gate region can be capacitively coupled to gate electrical conduction in the graphene nanoconstriction. A second gate region can be separated from the graphene nanoconstriction by a second gate dielectric. The second gate region can be capacitively coupled to provide a bias to a first location in the graphene nanoconstriction and to a second location outside of the graphene nanoconstriction. Methods of making and using locally gated graphene nanostructures are also described.
摘要翻译：描述了局部选通的石墨烯纳米结构，以及制备和使用它们的方法。石墨烯层可以包括由基本单层选通石墨烯纳米收集物分离的第一和第二末端区域。可以通过第一栅极电介质将局部第一栅极区域与石墨烯纳米收集分离。局部第一栅极区域可以电容耦合到石墨烯纳米收集中的栅极导电。可以通过第二栅极电介质将第二栅极区域与石墨烯纳米收集分离。第二栅极区域可以电容耦合以在石墨烯纳米收集中的第一位置和石墨烯纳米收集之外的第二位置提供偏置。还描述了制造和使用局部门控石墨烯纳米结构的方法。

7. 发明申请

US20090140801A1 Locally gated graphene nanostructures and methods of making and using 失效
标题翻译：本地门控石墨烯纳米结构及其制造和使用方法
公开(公告)号：US20090140801A1
公开(公告)日：2009-06-04
申请号：US12290648
申请日：2008-10-31
申请人： Barbaros Ozyilmaz , Dmitri Efetov , Pablo Jarillo-Herrero , Melinda Y. Han , Philip Kim
发明人： Barbaros Ozyilmaz , Dmitri Efetov , Pablo Jarillo-Herrero , Melinda Y. Han , Philip Kim
IPC分类号： H03H11/46 , H01L29/16
CPC分类号： H01L29/78684 , B82Y10/00 , H01L29/0665 , H01L29/0673 , H01L29/127 , H01L29/1606 , H01L29/7781 , H01L29/78648 , H01L29/78696
摘要： A locally gated graphene nanostructure is described, along with methods of making and using the same. A graphene layer can include first and second terminal regions separated by a substantially single layer gated graphene nanoconstriction. A local first gate region can be separated from the graphene nanoconstriction by a first gate dielectric. The local first gate region can be capacitively coupled to gate electrical conduction in the graphene nanoconstriction. A second gate region can be separated from the graphene nanoconstriction by a second gate dielectric. The second gate region can be capacitively coupled to provide a bias to a first location in the graphene nanoconstriction and to a second location outside of the graphene nanoconstriction. Methods of making and using locally gated graphene nanostructures are also described.
摘要翻译：描述了局部选通的石墨烯纳米结构，以及制备和使用它们的方法。石墨烯层可以包括由基本单层选通石墨烯纳米收集物分离的第一和第二末端区域。可以通过第一栅极电介质将局部第一栅极区域与石墨烯纳米收集分离。局部第一栅极区域可以电容耦合到石墨烯纳米收集中的栅极导电。可以通过第二栅极电介质将第二栅极区域与石墨烯纳米收集分离。第二栅极区域可以电容耦合以在石墨烯纳米收集中的第一位置和石墨烯纳米收集之外的第二位置提供偏置。还描述了制造和使用局部门控石墨烯纳米结构的方法。

8. 发明授权

US07170778B2 High speed low power magnetic devices based on current induced spin-momentum transfer 有权
标题翻译：基于电流感应自旋动量传递的高速低功率磁性装置
公开(公告)号：US07170778B2
公开(公告)日：2007-01-30
申请号：US11250791
申请日：2005-10-13
申请人： Andrew Kent , Enrique Gonzalez Garcia , Barbaros Ozyilmaz
发明人： Andrew Kent , Enrique Gonzalez Garcia , Barbaros Ozyilmaz
IPC分类号： G11C11/14
CPC分类号： H01F10/325 , B82Y10/00 , B82Y25/00 , G11C11/161 , G11C11/1673 , G11C11/1675 , G11C11/5607 , H01F10/123 , H01F10/3286 , H01L29/82 , H01L43/08
摘要： The present invention generally relates to the field of magnetic devices for memory cells that can serve as non-volatile memory. More specifically, the present invention describes a high speed and low power method by which a spin polarized electrical current can be used to control and switch the magnetization direction of a magnetic region in such a device. The magnetic device comprises a pinned magnetic layer with a fixed magnetization direction, a free magnetic layer with a free magnetization direction, and a read-out magnetic layer with a fixed magnetization direction. The pinned magnetic layer and the free magnetic layer are separated by a non-magnetic layer, and the free magnetic layer and the read-out magnetic layer are separated by another non-magnetic layer. The magnetization directions of the pinned and free layers generally do not point along the same axis. The non-magnetic layers minimize the magnetic interaction between the magnetic layers. A current is applied to the device to induce a torque that alters the magnetic state of the device so that it can act as a magnetic memory for writing information. The resistance, which depends on the magnetic state of the device, is measured to thereby read out the information stored in the device.
摘要翻译：本发明一般涉及可用作非易失性存储器的用于存储器单元的磁性装置领域。更具体地，本发明描述了可以使用自旋极化电流来控制和切换这种装置中的磁性区域的磁化方向的高速和低功率方法。磁性装置包括具有固定磁化方向的固定磁性层，具有自由磁化方向的自由磁性层和具有固定磁化方向的读出磁性层。固定磁性层和自由磁性层由非磁性层分离，自由磁性层和读出磁性层被另一个非磁性层分离。被钉扎和自由层的磁化方向通常不沿着相同的轴线。非磁性层使磁性层之间的磁性相互作用最小化。电流被施加到装置以引起改变装置的磁状态的扭矩，使得它可以用作写入信息的磁存储器。测量取决于装置的磁状态的电阻，从而读出存储在装置中的信息。

9. 发明申请

US20060030058A1 High speed low power magnetic devices based on current induced spin-momentum transfer 有权
标题翻译：基于电流感应自旋动量传递的高速低功率磁性装置
公开(公告)号：US20060030058A1
公开(公告)日：2006-02-09
申请号：US11250791
申请日：2005-10-13
申请人： Andrew Kent , Enrique Gonzalez Garcia , Barbaros Ozyilmaz
发明人： Andrew Kent , Enrique Gonzalez Garcia , Barbaros Ozyilmaz
IPC分类号： H01L21/00
CPC分类号： H01F10/325 , B82Y10/00 , B82Y25/00 , G11C11/161 , G11C11/1673 , G11C11/1675 , G11C11/5607 , H01F10/123 , H01F10/3286 , H01L29/82 , H01L43/08
摘要： The present invention generally relates to the field of magnetic devices for memory cells that can serve as non-volatile memory. More specifically, the present invention describes a high speed and low power method by which a spin polarized electrical current can be used to control and switch the magnetization direction of a magnetic region in such a device. The magnetic device comprises a pinned magnetic layer with a fixed magnetization direction, a free magnetic layer with a free magnetization direction, and a read-out magnetic layer with a fixed magnetization direction. The pinned magnetic layer and the free magnetic layer are separated by a non-magnetic layer, and the free magnetic layer and the read-out magnetic layer are separated by another non-magnetic layer. The magnetization directions of the pinned and free layers generally do not point along the same axis. The non-magnetic layers minimize the magnetic interaction between the magnetic layers. A current is applied to the device to induce a torque that alters the magnetic state of the device so that it can act as a magnetic memory for writing information. The resistance, which depends on the magnetic state of the device, is measured to thereby read out the information stored in the device.
摘要翻译：本发明一般涉及可用作非易失性存储器的用于存储器单元的磁性装置领域。更具体地，本发明描述了可以使用自旋极化电流来控制和切换这种装置中的磁性区域的磁化方向的高速和低功率方法。磁性装置包括具有固定磁化方向的固定磁性层，具有自由磁化方向的自由磁性层和具有固定磁化方向的读出磁性层。固定磁性层和自由磁性层由非磁性层分离，自由磁性层和读出磁性层被另一个非磁性层分离。被钉扎和自由层的磁化方向通常不沿着相同的轴线。非磁性层使磁性层之间的磁性相互作用最小化。电流被施加到装置以引起改变装置的磁状态的扭矩，使得它可以用作写入信息的磁存储器。测量取决于装置的磁状态的电阻，从而读出存储在装置中的信息。

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