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1. 发明申请

WO2012141952A1 SYSTEM AND METHOD FOR EXECUTION ON MULTIPLE THREADS 审中-公开
标题翻译：用于执行多个线程的系统和方法
公开(公告)号：WO2012141952A1
公开(公告)日：2012-10-18
申请号：PCT/US2012/032083
申请日：2012-04-04
申请人： SIEMENS PRODUCT LIFECYCLE MANAGEMENT SOFTWARE INC. , BRAZIER, Mark
发明人： BRAZIER, Mark
IPC分类号： G06F9/52
CPC分类号： G06F9/52 , G06F9/4881 , G06F2209/484
摘要： Non-thread-safe applications may call several application programming interfaces (APIs), from several different suppliers, which may each change from non-thread-safe to thread safe over time. It is therefore useful to be able to effectively and safely manage each of these cases, or combinations of these cases, by employing Intermediate Layers as necessary to optimized performance on an API by API basis. A method (305, 310,.. 325) is disclosed which includes techniques that enable a non-thread-safe application to call a thread-safe API in order to gain the performance benefits of running the thread-safe API on multi-processor or multi-core processor computer hardware.
摘要翻译：非线程安全应用程序可能会调用几个不同供应商的多个应用程序编程接口（API），这些应用程序编程接口可能会随着时间的推移从非线程安全更改为线程安全。因此，有必要通过使用中间层来有效和安全地管理这些情况或这些情况的组合，以便通过API对API进行优化性能。公开了一种方法（305,310，... 325），其包括使非线程安全应用程序能够调用线程安全API的技术，以便获得在多处理器上运行线程安全API的性能优势或多核处理器计算机硬件。

2. 发明申请

WO2006026018A3 ATOMIC LAYER DEPOSITION OF HIGH QUALITY HIGH-K TRANSITION METAL AND RARE EARTH OXIDES 审中-公开
标题翻译：高品质高K金属和稀土氧化物的原子层沉积
公开(公告)号：WO2006026018A3
公开(公告)日：2010-01-28
申请号：PCT/US2005027173
申请日：2005-07-29
申请人： INTEL CORP , METZ MATTHEW , BRAZIER MARK , GLASSMAN TIMOTHY , THOMAS CHRISTOPHER , FOLEY LAWRENCE , PARKER CHRISTOPHER , ZHOU YING , KUHN MARKUS , DATTA SUMAN , KAVALIEROS JACK , DOCZY MARK , BRASK JUSTIN , CHAU ROBERT
发明人： METZ MATTHEW , BRAZIER MARK , GLASSMAN TIMOTHY , THOMAS CHRISTOPHER , FOLEY LAWRENCE , PARKER CHRISTOPHER , ZHOU YING , KUHN MARKUS , DATTA SUMAN , KAVALIEROS JACK , DOCZY MARK , BRASK JUSTIN , CHAU ROBERT
IPC分类号： C23C16/455
CPC分类号： C23C16/45527
摘要： Increasing the number of successive pulses of oxidant before applying pulses of metal precursor may improve the quality of the resulting metal or rare earth oxide films. These metal or rare earth oxide films may be utilized for high dielectric constant gate dielectrics. In addition, pulsing the oxidant during the pre-stabilization period may be advantageous. Also, using more pulses of oxidant than the pulses of precursor may reduce chlorine concentration in the resulting films.
摘要翻译：在施加金属前体的脉冲之前增加氧化剂的连续脉冲数可以提高所得金属或稀土氧化物膜的质量。这些金属或稀土氧化物膜可用于高介电常数栅极电介质。此外，在预稳定化期间脉冲氧化剂可能是有利的。此外，使用比前体脉冲更多的氧化剂脉冲可以降低所得膜中的氯浓度。

3. 发明申请

WO2009042982A1 METHODS FOR THE DEPOSITION OF TERNARY OXIDE GATE DIELECTRICS AND STRUCTURES FORMED THEREBY 审中-公开
标题翻译：三氧化锗栅介质的沉积方法及其形成的结构
公开(公告)号：WO2009042982A1
公开(公告)日：2009-04-02
申请号：PCT/US2008/078043
申请日：2008-09-28
申请人： INTEL CORPORATION , BRAZIER, Mark R. , METZ, Matthew V. , MCSWINEY, Michael L. , KUHN, Markus , HATTENDORF, Michael L.
发明人： BRAZIER, Mark R. , METZ, Matthew V. , MCSWINEY, Michael L. , KUHN, Markus , HATTENDORF, Michael L.
IPC分类号： H01L21/205
CPC分类号： C23C16/45531 , C23C16/405 , H01L21/28194 , H01L21/3141 , H01L21/3142 , H01L21/31604 , H01L29/517 , Y10T428/24744
摘要： Methods and associated structures of forming a microelectronic device are described. Those methods may include introducing a first metal source, a second metal source and an oxygen source into a chamber and then forming a ternary oxide film comprising a first percentage of the first metal, a second percentage of the second metal, and a third percentage of oxygen.
摘要翻译：描述形成微电子器件的方法和相关结构。这些方法可以包括将第一金属源，第二金属源和氧源引入室中，然后形成包含第一金属的第一百分比，第二金属的第二百分比以及第二金属的第三百分比的三元氧化物膜氧。

4. 发明申请

WO2006026018A2 ATOMIC LAYER DEPOSITION OF HIGH QUALITY HIGH-K TRANSITION METAL AND RARE EARTH OXIDES 审中-公开
标题翻译：高品质高K金属和稀土氧化物的原子层沉积
公开(公告)号：WO2006026018A2
公开(公告)日：2006-03-09
申请号：PCT/US2005/027173
申请日：2005-07-29
申请人： INTEL CORPORATION , METZ, Matthew , BRAZIER, Mark , GLASSMAN, Timothy , THOMAS, Christopher , FOLEY, Lawrence , PARKER, Christopher , ZHOU, Ying , KUHN, Markus , DATTA, Suman , KAVALIEROS, Jack , DOCZY, Mark , BRASK, Justin , CHAU, Robert
发明人： METZ, Matthew , BRAZIER, Mark , GLASSMAN, Timothy , THOMAS, Christopher , FOLEY, Lawrence , PARKER, Christopher , ZHOU, Ying , KUHN, Markus , DATTA, Suman , KAVALIEROS, Jack , DOCZY, Mark , BRASK, Justin , CHAU, Robert
CPC分类号： C23C16/45527
摘要： Increasing the number of successive pulses of oxidant before applying pulses of metal precursor may improve the quality of the resulting metal or rare earth oxide films. These metal or rare earth oxide films may be utilized for high dielectric constant gate dielectrics. In addition, pulsing the oxidant during the pre-stabilization period may be advantageous. Also, using more pulses of oxidant than the pulses of precursor may reduce chlorine concentration in the resulting films.
摘要翻译：在施加金属前体的脉冲之前增加氧化剂的连续脉冲数可以提高所得金属或稀土氧化物膜的质量。这些金属或稀土氧化物膜可用于高介电常数栅极电介质。此外，在预稳定化期间脉冲氧化剂可能是有利的。此外，使用比前体脉冲更多的氧化剂脉冲可以降低所得膜中的氯浓度。

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