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    • 1. 发明专利
    • DK0878091T3
    • 2003-01-20
    • DK97948835
    • 1997-10-30
    • BOEHM MARKUS PROF DR ING
    • BOEHM MARKUSRIEVE PETERLULE TAREK
    • H01L27/146H04N3/15H04N5/374H04N5/3745H04N9/04H04N9/07
    • The invention relates to an optical sensor consisting of an arrangement of pixel units, each comprising an optoelectronic converter for converting the incident radiation into a photoelectric current that depends on intensity and wavelength, an integrator median for deriving a measured value corresponding to the photoelectric current detected, and a controllable storage device for storing the measured value, and a readout control device for readout of the stored measured values based on one pixel unit, where the image striking the sensor can be assembled from the measured values based on pixel units. The object of creating an optical sensor permitting operation within a short exposure time is achieved by the fact that each pixel unit has integrator median (7, 8; 11, 12; 15, 16) and at least two parallel storage device (21, 22, 23), such that at least two measured values, each assigned to different spectral ranges of the incident radiation, can be detected and stored during the measurement period and then can be read out together to form the relevant color information for the pixel element.
    • 4. 发明专利
    • DE59708194D1
    • 2002-10-17
    • DE59708194
    • 1997-10-30
    • BOEHM MARKUS
    • BOEHM MARKUSRIEVE PETERLULE TAREK
    • H01L27/146H04N3/15H04N5/374H04N5/3745H04N9/04H04N9/07
    • The invention relates to an optical sensor consisting of an arrangement of pixel units, each comprising an optoelectronic converter for converting the incident radiation into a photoelectric current that depends on intensity and wavelength, an integrator median for deriving a measured value corresponding to the photoelectric current detected, and a controllable storage device for storing the measured value, and a readout control device for readout of the stored measured values based on one pixel unit, where the image striking the sensor can be assembled from the measured values based on pixel units. The object of creating an optical sensor permitting operation within a short exposure time is achieved by the fact that each pixel unit has integrator median (7, 8; 11, 12; 15, 16) and at least two parallel storage device (21, 22, 23), such that at least two measured values, each assigned to different spectral ranges of the incident radiation, can be detected and stored during the measurement period and then can be read out together to form the relevant color information for the pixel element.
    • 7. 发明专利
    • Amorphous silicon based photosensitive electronic device
    • DE19710134A1
    • 1998-09-24
    • DE19710134
    • 1997-03-12
    • BOEHM MARKUS PROF DR ING
    • BOEHM MARKUS PROF DR INGRIEVE PETER
    • H01L27/146H01L31/105H01L31/20
    • The parent patent (Application No. 19637126) describes an amorphous silicon (alloy) based photosensitive electronic device having blocking contacts with adjacent radiation absorbing intrinsically conductive layers, each active layer being arranged normal to the light propagation direction. Charge carriers, generated by varied spectral radiation, are collected at different externally applied voltages. At least one of the intrinsically conductive layers consists of two sub-layers of different collection lengths (drift lengths) for photo-generated charge carriers, the leading and trailing (in the light incidence direction) sub-layers (I, II) having respectively longer and shorter collection lengths for producing different electric field strengths so that multiplied charge carriers are collected at short and long wave light irradiation, respectively. In this patent of addition, the novelty is that at least one of the intrinsically conductive layers has an additional third sub-layer (III) having a collection length (drift length) which differs from those of the other two sub-layers (I, II) so that multiplied charge carriers of different respective spectral regions are collected in each of the three sub-layers. Preferably, the device has a glass substrate bearing (a) a p-conductive (or n-conductive) a-Si:H layer; (b) an intrinsically conductive a-Si:H layer consisting of three sub-layers (I, II, III) of different dielectric constants increasing in the light incidence direction; and (c) an n-conductive (or p-conductive) a-Si:H layer.