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1. 发明专利

JP2014147380A Production method and apparatus of extending agent to be combined with feed, and extending agent using thereof 审中-公开
标题翻译：扩展剂与饲料组合的生产方法和装置，以及使用其延长的试剂
公开(公告)号：JP2014147380A
公开(公告)日：2014-08-21
申请号：JP2013030427
申请日：2013-01-31
申请人： Atsushi Kaneko , 敦金子
发明人： KANEKO ATSUSHI
IPC分类号： A23K1/00 , A23K1/16 , F26B17/02
CPC分类号： Y02P60/877
摘要： PROBLEM TO BE SOLVED: To provide a production method and apparatus which can produce an extending agent with good quality and low price, while reducing time and effort to secure a waste substrate.SOLUTION: A production method of the extending agent according to the present invention comprises a carrying process for deaerating and carrying a waste substrate 10 to be discarded; a raw material injection process for injecting into an accumulating part 2 the waste substrate carried to a plant in the carrying process; a conveying process for agitating and conveying toward a drying chamber 3 the waste substrate injected into the accumulating part in the raw material injection process; a drying process for drying and pulverizing in a given temperature zone the waste substrate conveyed into the drying chamber; a packing process for packing into a deaerated state in a storage bag 8 the waste substrate 10a pulverized in the drying process.
摘要翻译：要解决的问题：提供一种可以生产质量好，价格低廉的扩展剂的生产方法和装置，同时减少了固定废弃基材的时间和精力。解决方案：根据本发明的扩展剂的生产方法包括用于脱气和携带待丢弃的废弃基板10的承载方法; 一种原料注入方法，用于在运送过程中将携带到工厂的废物基质注入到积聚部分2中; 用于在原料注入过程中向干燥室3搅拌和输送废弃基板注入到积聚部件中的输送过程; 干燥过程，用于在给定的温度区域中干燥和粉碎废物基底输送到干燥室中; 用于在储存袋8中填充到脱气状态的包装过程，在干燥过程中粉碎的废弃基材10a。

2. 发明授权

US09193756B2 Adrenomedullin production enhancer 有权
标题翻译：肾上腺髓质素生产增强剂
公开(公告)号：US09193756B2
公开(公告)日：2015-11-24
申请号：US12918437
申请日：2008-02-19
申请人： Toru Kono , Atsushi Kaneko , Yuji Omiya
发明人： Toru Kono , Atsushi Kaneko , Yuji Omiya
IPC分类号： A61K31/704 , A61K31/164 , C07J9/00 , A61K36/75 , A61K36/9068 , C07J17/00
CPC分类号： A61K31/704 , A61K31/12 , A61K31/164 , A61K31/575 , A61K36/258 , A61K36/75 , A61K36/9068 , C07J9/00 , C07J17/005 , A61K2300/00
摘要： It is an object of the invention to discover a substance that effectively increases the production of adrenomedullin, as well as to provide an adrenomedullin production-enhancing agent utilizing this substance. The adrenomedullin production-enhancing agent is characterized by inclusion of a ginsenoside, a sanshool, and/or a shogaol as active ingredients.
摘要翻译：本发明的目的是发现有效增加肾上腺髓质素产生的物质，以及提供利用该物质的肾上腺髓质素生产增强剂。肾上腺髓质素生产增强剂的特征在于包含人参皂甙，桑树和/或sho醇作为活性成分。

3. 发明授权

US08965469B2 Oxide superconductor cabling and method of manufacturing oxide superconductor cabling 有权
标题翻译：氧化物超导体布线及其制造方法
公开(公告)号：US08965469B2
公开(公告)日：2015-02-24
申请号：US13578344
申请日：2011-02-10
申请人： Tatsuhisa Nakanishi , Yuji Aoki , Tsutomu Koizumi , Atsushi Kaneko , Takayo Hasegawa
发明人： Tatsuhisa Nakanishi , Yuji Aoki , Tsutomu Koizumi , Atsushi Kaneko , Takayo Hasegawa
IPC分类号： H01B12/06 , H01L39/24 , H01B13/00 , H01B12/02
CPC分类号： H01B12/02 , H01B13/00 , H01L39/2461 , Y10S505/704 , Y10T29/49014
摘要： Disclosed are an oxide superconductor tape and a method of manufacturing the oxide superconductor tape capable of improving the length and characteristics of superconductor tape and obtaining stabilized characteristics across the entire length thereof. A Y-class superconductor tape (10), as an oxide superconductor tape, comprises a tape (13) further comprising a tape-shaped non-oriented metallic substrate (11), and a first buffer layer (sheet layer) (12) that is formed by IBAD upon the tape-shaped non-oriented metallic substrate (11); and a second buffer layer (gap layer) (14), further comprising a lateral face portion (14a) that is extended to the lateral faces of the first buffer layer (sheet layer) (12) upon the tape (13) by RTR RF-magnetron sputtering.
摘要翻译：公开了氧化物超导体带和制造氧化物超导体带的方法，其能够改善超导体带的长度和特性并且在其整个长度上获得稳定的特性。作为氧化物超导体带的Y级超导体带（10）包括进一步包括带状非取向金属基板（11）的带（13）和第一缓冲层（片层）（12），所述第一缓冲层由IBAD形成在带状非取向金属基板（11）上; 以及第二缓冲层（间隙层）（14），还包括侧面部分（14a），其通过RTR RF延伸到所述带（13）上的所述第一缓冲层（片层）（12）的侧面磁控溅射。

4. 发明授权

US08836466B2 Monitoring system, device, monitoring method, and monitoring program 有权
标题翻译：监控系统，设备，监控方法和监控程序
公开(公告)号：US08836466B2
公开(公告)日：2014-09-16
申请号：US13193754
申请日：2011-07-29
申请人： Yutaka Itou , Makoto Ikeyama , Yasushi Nakagawa , Yuji Aoki , Atsushi Kaneko
发明人： Yutaka Itou , Makoto Ikeyama , Yasushi Nakagawa , Yuji Aoki , Atsushi Kaneko
IPC分类号： G05B23/02 , H04L27/00 , G06F15/16 , H04L12/24
CPC分类号： H04L41/0686 , H04L41/069
摘要： In a monitoring system, a first device among devices includes a generating unit that generates third data indicating a string of an identical section when strings each indicated in first data and second data acquired through communications with the devices are identical to each other by a predetermined proportion or more, and a first transmitting unit that transmits the third data generated by the generating unit and information for identifying the third data to a second device included in the devices. The second device includes a second transmitting unit that transmits, when a string indicated in fourth data to be transmitted to the first device includes the string indicated in the third data, fifth data indicating a string obtained by excluding the string indicated in the third data from the string indicated in the fourth data, and the information for identifying the third data to the first device.
摘要翻译：在监视系统中，设备之间的第一设备包括：生成单元，其生成表示第一数据中指示的字符串的相同部分的串的第三数据，并且通过与所述设备的通信获取的第二数据以预定比例彼此相同以及第一发送单元，其将由生成单元生成的第三数据和用于识别第三数据的信息发送到包括在设备中的第二设备。第二装置包括：第二发送单元，当要发送到第一装置的第四数据中指示的串包括第三数据中指示的串时，发送第五数据，指示通过将第三数据中指示的串排除的字符串第四数据中指示的字符串，以及用于识别第一数据的信息。

5. 发明申请

US20130182296A1 IMAGE READING DEVICE, IMAGE READING METHOD, AND IMAGE FORMING APPARATUS 有权
标题翻译：图像读取装置，图像读取方法和图像形成装置
公开(公告)号：US20130182296A1
公开(公告)日：2013-07-18
申请号：US13546728
申请日：2012-07-11
申请人： Shinji MASAKI , Atsushi KANEKO , Hiromi KITA , Kenji YAMADA , Nobutoshi HAMASAKI , Nobuyuki MARUNO
发明人： Shinji MASAKI , Atsushi KANEKO , Hiromi KITA , Kenji YAMADA , Nobutoshi HAMASAKI , Nobuyuki MARUNO
IPC分类号： H04N1/04
CPC分类号： H04N1/409 , G03G15/607 , H04N1/00278 , H04N1/00588 , H04N1/00718 , H04N1/00745 , H04N1/00785 , H04N1/3878 , H04N2201/0081 , H04N2201/0091 , H04N2201/0098
摘要： An image reading device includes a transporter transporting a document to a reading position, a first corrector correcting a skew of the document by coming into contact with a leading edge thereof, a radiating unit radiating light to the document, an image-information acquiring unit acquiring image information of the document based on information of light reflected therefrom, a reflector reflecting the radiated light, a leading-edge detector comparing a quantity of light reflected by the reflector with a quantity of light reflected by the document so as to detect the leading edge, a skew-amount calculator calculating a skew amount of the leading edge, and a second corrector correcting a skew of the image information based on the skew amount. The device switches between the skew correction by the first corrector and the skew correction by the second corrector based on document information, the skew amount, or user's selection.
摘要翻译：图像读取装置包括将文件传送到读取位置的传送器，通过与其前端接触来校正文档的歪斜的第一校正器，向文档照射光的辐射单元，图像信息获取单元获取基于从其反射的光的信息的图像信息，反射辐射光的反射器，将由反射器反射的光量与由文档反射的光量进行比较的前沿检测器，以便检测前端，计算前缘的偏斜量的偏斜量计算器和基于偏斜量校正图像信息的偏斜的第二校正器。该装置基于文档信息，偏斜量或用户的选择，在第一校正器的偏斜校正和第二校正器的偏斜校正之间切换。

6. 发明授权

US08415740B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08415740B2
公开(公告)日：2013-04-09
申请号：US13358526
申请日：2012-01-26
申请人： Atsushi Kaneko
发明人： Atsushi Kaneko
IPC分类号： H01L29/66 , H01L29/78
CPC分类号： H01L29/7813 , H01L21/26586 , H01L29/0696 , H01L29/0869 , H01L29/1095 , H01L29/66734
摘要： Provided is a method of manufacturing a semiconductor device, that buried gate electrodes are formed in a pair of trenches in a substrate, so as to be recessed from the level of the top end of the trenches, a base region is formed between a predetermined region located between the pair of trenches, and a source region is formed over the base region.
摘要翻译：提供了一种制造半导体器件的方法，其中掩埋栅电极形成在衬底中的一对沟槽中，以便从沟槽的顶端的水平面凹陷，在预定区域位于所述一对沟槽之间，并且在所述基底区域上形成源极区域。

7. 发明授权

US08133785B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08133785B2
公开(公告)日：2012-03-13
申请号：US12621711
申请日：2009-11-19
申请人： Atsushi Kaneko
发明人： Atsushi Kaneko
IPC分类号： H01L21/336 , H01L21/40
CPC分类号： H01L29/7813 , H01L21/26586 , H01L29/0696 , H01L29/0869 , H01L29/1095 , H01L29/66734
摘要： Provided is a method of manufacturing a semiconductor device, that buried gate electrodes are formed in a pair of trenches in a substrate, so as to be recessed from the level of the top end of the trenches, a base region is formed between a predetermined region located between the pair of trenches, and a source region is formed over the base region.
摘要翻译：提供了一种制造半导体器件的方法，其中掩埋栅电极形成在衬底中的一对沟槽中，以便从沟槽的顶端的水平面凹陷，在预定区域位于所述一对沟槽之间，并且在所述基底区域上形成源极区域。

8. 发明授权

US08094084B2 Omnidirectional antenna for indoor and outdoor use 失效
标题翻译：全方位天线用于室内和室外使用
公开(公告)号：US08094084B2
公开(公告)日：2012-01-10
申请号：US11994190
申请日：2006-03-15
申请人： Atsushi Kaneko , Shuji Hagiwara
发明人： Atsushi Kaneko , Shuji Hagiwara
IPC分类号： H01Q9/26 , H01Q1/42
CPC分类号： H01Q9/285 , H01Q1/42
摘要： A plate-shaped radiating element of a shape having at least three planes is formed by bending a metal plate having a substantially rectangular shape. A first slit is provided from a lower edge of the plate-shaped radiating element up to a portion in the vicinity of an upper edge of the plate-shaped radiating element while passing through a center point of the plate-shaped radiating element, and forms plate-shaped dipole elements on both sides thereof. A second slit is provided parallel to the upper edge of the plate-shaped radiating element and forms a folded element on an upper side thereof. Feeding points are provided on both sides of the first slit at the lower edge of the plate-shaped radiating element.
摘要翻译：通过弯曲具有大致矩形形状的金属板，形成具有至少三个平面的形状的板状辐射元件。第一狭缝从板状辐射元件的下边缘提供到板状辐射元件的上边缘附近的一部分，同时穿过板状辐射元件的中心点，并形成两侧板状偶极子元件。第二狭缝平行于板状辐射元件的上边缘设置，并在其上侧形成折叠元件。在板状辐射元件的下边缘处的第一狭缝的两侧设置有进给点。

9. 发明授权

US08014223B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08014223B2
公开(公告)日：2011-09-06
申请号：US12199913
申请日：2008-08-28
申请人： Atsushi Kaneko , Yasuo Okada
发明人： Atsushi Kaneko , Yasuo Okada
IPC分类号： G11C17/18
CPC分类号： H01L23/62 , H01L24/48 , H01L24/49 , H01L25/18 , H01L2224/32145 , H01L2224/48145 , H01L2224/48147 , H01L2224/49175 , H01L2224/73265 , H01L2225/06506 , H01L2225/0651 , H01L2924/00014 , H01L2924/181 , H01L2924/1815 , H01L2924/19041 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device including a plurality of semiconductor elements, a substrate on which the plurality of semiconductor elements are mounted, the substrate also having a plurality of terminals for connecting to external equipment, a fuse mounted on the outside of a mounting area of the plurality of semiconductor elements and mounted on a surface of the substrate near a power supply terminal among the plurality of terminals, and the power supply terminal and the plurality of semiconductor elements are connected via the fuse.
摘要翻译：一种半导体器件，包括多个半导体元件，其上安装有多个半导体元件的基板，所述基板还具有用于连接到外部设备的多个端子，安装在所述多个半导体元件的安装区域的外部的保险丝半导体元件，并且安装在多个端子中的电源端子附近的基板的表面上，并且电源端子和多个半导体元件经由保险丝连接。

10. 发明授权

US07652327B2 Semiconductor device and manufacturing method for semiconductor device 有权
标题翻译：半导体装置及半导体装置的制造方法
公开(公告)号：US07652327B2
公开(公告)日：2010-01-26
申请号：US11365871
申请日：2006-03-02
申请人： Atsushi Kaneko
发明人： Atsushi Kaneko
IPC分类号： H01L29/94
CPC分类号： H01L29/7813 , H01L21/26533 , H01L29/0653 , H01L29/66734
摘要： To provide a semiconductor device capable of reducing a gate capacitance, and preventing breakdown of a gate oxide film if a large amount of current flows. A semiconductor device according to an embodiment of the present invention includes: an epitaxial layer; a channel region formed on the epitaxial layer; a trench extending from a surface of the channel region to the epitaxial layer; a gate oxide film that covers an inner surface of the trench; a gate electrode filled into the trench; and a buried insulating film formed below the gate electrode and away from the gate oxide film.
摘要翻译：提供能够减小栅极电容的半导体器件，并且如果大量的电流流动，则防止栅极氧化膜的击穿。根据本发明实施例的半导体器件包括：外延层; 形成在所述外延层上的沟道区; 从沟道区的表面延伸到外延层的沟槽; 覆盖所述沟槽的内表面的栅极氧化膜; 填充到沟槽中的栅电极; 以及形成在栅电极下方并远离栅氧化膜的掩埋绝缘膜。

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